arXiv subjects

V. K. Dugaev

Publications and source records attributed to V. K. Dugaev.

At least 55 records · Page 3Linked to original sources

arXiv2014

Optical spin injection in graphene with Rashba spin-orbit interaction

We calculate the efficiency of infrared optical spin injection in single-layer graphene with Rashba spin-orbit coupling and for in-plane magnetic field. The injection rate in the photon frequency range corresponding to the Rashba splitting is shown to be proportional to the ratio of the Zeeman and Rashba splittings. As a result, large spin polarization can be controllably achieved for experimentally available values of the spin-orbit coupling and in magnetic fields below 10 Tesla.

cond-mat.mes-hall↗

arXiv2013

Thermally activated in-plane magnetization rotation induced by spin torque

We study the role of thermal fluctuations on the spin dynamics of a thin permalloy film with a focus on the behavior of spin torque and find that the thermally assisted spin torque results in new aspects of the magnetization dynamics. In particular, we uncover the formation of a finite, spin torque-induced, in-plane magnetization component. The orientation of the in-plane magnetization vector depends on the temperature and the spin-torque coupling. We investigate and illustrate that the variation of the temperature leads to a thermally-induced rotation of the in-plane magnetization.

cond-mat.mes-hall↗

arXiv2013

Fokker-Planck approach to the theory of magnon-driven spin Seebeck effect

Following the theoretical approach by Xiao et al [Phys. Rev. B 81, 214418 (2010)] to the spin Seebeck effect, we calculate the mean value of the total spin current flowing through a normalmetal/ ferromagnet interface. The spin current emitted from the ferromagnet to the normal metal is evaluated in the framework of the Fokker-Planck approach for the stochastic Landau-Lifshitz-Gilbert equation. We show that the total spin current depends not only on the temperature difference between the electron and the magnon baths, but also on the external magnetic field and magnetic anisotropy. Apart from this, the spin current is shown to saturate with increasing magnon temperature, and the saturation temperature increases with increasing magnetic field and/or magnetic anisotropy.

cond-mat.mes-hall↗

arXiv2013

Current-induced spin polarization in graphene due to Rashba spin-orbit interaction

Spin polarization induced by an external electric field in graphene is considered theoretically in the linear response regime. The graphene is assumed to be deposited on a substrate which leads to the spin-orbit interaction of Rashba type. The induced spin polarization is shown to be in the graphene plane and perpendicular to the electric field. However, the spin polarization changes sign when the Fermi level, whose position can be controlled by an external gate voltage, crosses the Dirac points.

cond-mat.mes-hall↗

arXiv2013

Edge scattering of electrons in graphene

We discuss the contribution of edge scattering to the conductance of graphene nanoribbons and nanoflakes. Using different possible types of the boundary conditions for the electron wave function at the edge, we found dependences of the momentum relaxation time and conductance on the geometric sizes and on the carrier density. We also consider the case of ballistic nanoribbon and nanodisc, for which the edge scaterring is the main mechanism of momentum relaxation.

cond-mat.mes-hall↗

arXiv2013

Thermally-induced spin polarization of a two dimensional electron gas

Spin polarization of a two-dimensional electron gas with Rashba spin-orbit interaction, induced by a thermo-current, is considered theoretically. It is shown that a temperature gradient gives rise to an in-plane spin polarization of the electron gas, which is normal to the temperature gradient. The low-temperature spin polarization changes sign when the Fermi level crosses bottom edge of the upper electronic subband. We also compare the results with spin polarization induced by an external electric field (current).

cond-mat.mes-hall↗

arXiv2012

Nonlinear anomalous Hall effect and negative magnetoresistance in a system with random Rashba field

We predict two spin-dependent transport phenomena in two-dimensional electron systems, which are induced by spatially fluctuating Rashba spin-orbit interaction. When the electron gas is magnetized, the random Rashba interaction leads to the anomalous Hall effect. An example of such a system is a narrow-gap magnetic semiconductor-based symmetric quantum well. We show that the anomalous Hall conductivity reveals a strongly nonlinear dependence on the magnetization, decreasing exponentially at large spin density. We also show that electron scattering from a fluctuating Rashba field in a two-dimensional nonmagnetic electron system leads to a negative magnetoresistance arising solely due to spin-dependent effects.

cond-mat.mes-hall↗

arXiv2012

Controlling shot noise in double-barrier magnetic tunnel junctions

We demonstrate that shot noise in Fe/MgO/Fe/MgO/Fe double-barrier magnetic tunnel junctions is determined by the relative magnetic configuration of the junction and also by the asymmetry of the barriers. The proposed theoretical model, based on sequential tunneling through the system and including spin relaxation, successfully accounts for the experimental observations for bias voltages below 0.5V, where the influence of quantum well states is negligible. A weak enhancement of conductance and shot noise, observed at some voltages (especially above 0.5V), indicates the formation of quantum well states in the middle magnetic layer. The observed results open up new perspectives for a reliable magnetic control of the most fundamental noise in spintronic structures.

cond-mat.mes-hall↗

arXiv2012

Dynamics of magnetic moments coupled to electrons and lattice oscillations

Inspired by the models of A. Rebei and G. J. Parker and A. Rebei et. al., we study a physical model which describes the behaviour of magnetic moments in a ferromagnet. The magnetic moments are associated to 3d electrons which interact with conduction band electrons and with phonons. We study each interaction separately and then collect the results assuming that the electron-phonon interaction can be neglected. For the case of the spin-phonon interaction, we study the derivation of the equations of motion for the classical spin vector and find that the correct behaviour, as given by the Brown equation for the spin vector and the Bloch equation, using the results obtained by D. A. Garanin for the average over fluctuations of the spin vector, can be obtained in the high temperature limit. At finite temperatures we show that the Markovian approximation for the fluctuations is not correct for time scales below some thermal correlation time $τ_{Th}$. For the case of electrons we workout a perturbative expansion of the Feynman-Vernon functional. We find the expression for the random field correlation function. The composite model (as well as the individual models) is shown to satisfy a fluctuation-dissipation theorem for all temperature regimes if the behaviour of the coupling constants of the phonon-spin interaction remains unchanged with the temperature. The equations of motion are derived.

cond-mat.mtrl-sci↗

arXiv2012

Graphene in periodic deformation fields: dielectric screening and plasmons

We consider the effect of periodic scalar and vector potentials generated by periodic deformations of the graphene crystal lattice, on the energy spectrum of electrons. The dependence of electron velocity near the Dirac point on the periodic perturbations of different types is discussed. We also investigated the effect of screening of the scalar potential by calculating the dielectric function as a function of the wave length of the periodic potential. This calculation shows that the periodic scalar field is strongly suppressed by the screening. Using the dependence of electron velocity on the periodic field we also studied the variation of the plasmon spectra in graphene. We found that the spectrum of plasmon excitations can be effectively controlled by the periodic strain field.

cond-mat.mes-hall↗

arXiv2012

Tunneling in double barrier junctions with 'hot spots'

We investigate electronic transport in epitaxial Fe(100)/MgO/Fe/MgO/Fe double magnetic tunnel junctions with soft barrier breakdown (hot spots). Specificity of these junctions are continious middle layer and Nitrogen doping of the MgO barriers which provides soft breakdown at biases about 0.5V. In the junctions with hot spots we observe quasi-periodic changes in the resistance as a function of bias voltage which point out formation of quantum well states in the middle Fe continuous free layer. The room-temperature oscillations have been observed in both parallel and antiparallel magnetic configurations and for both bias polarizations. A simple model of tunneling through hot spots in the double barrier magnetic junction is proposed to explain qualitatively this effect.

cond-mat.mes-hall↗

arXiv2011

Anomalous Hall effect in superconductors with spin-orbit interaction

We calculate the anomalous Hall conductance of superconductors with spin-orbit interaction and with either uniform or local magnetization. In the first case we consider a uniform ferromagnetic ordering in a spin triplet superconductor, while in the second case we consider a conventional s-wave spin singlet superconductor with a magnetic impurity (or a diluted set of magnetic impurities). In the latter case we show that the anomalous Hall conductance can be used to track the quantum phase transition, that occurs when the spin coupling between the impurity and electronic spin density exceeds a certain critical value. In both cases we find that for large spin-orbit coupling the superconductivity is destroyed and the Hall conductance oscillates strongly.

cond-mat.supr-con↗

arXiv2011

Indirect Interaction of Magnetic Domain Walls

We calculate the electron-mediated exchange interaction between two domain walls in magnetic wires. This corresponds to the equilibrium regime and, therefore, the interaction can be additionally controlled by an electric current. The exchange interaction is long ranged and oscillates as a function of the distance between the walls. It also depends oscillatory on the polarization angle of the walls, having the maximum value for collinear polarization.

cond-mat.mes-hall↗

arXiv2011

Nonlinear spin Hall effect in GaAs (110) quantum wells

We consider stationary spin current in a (110)-oriented GaAs-based symmetric quantum well due to a nonlinear response to an external periodic electric field. The model assumed includes the Dresselhaus spin-orbit interaction and the random Rashba spin-orbit coupling. The Dresselhaus term is uniform in the quantum well plane and gives rise to spin splitting of the electron band. The external electric field of frequency $ω$ - in the presence of random Rashba coupling -- leads to virtual spin-flip transitions between spin subbands, generating stationary pure spin current proportional to the square of the field amplitude.

cond-mat.mtrl-sci↗

arXiv2011

Graphene in periodically alternating magnetic field: unusual quantization of the anomalous Hall effect

We study the energy spectrum and electronic properties of graphene in a periodic magnetic field of zero average with a symmetry of triangular lattice. The periodic field leads to formation of a set of minibands separated by gaps, which can be manipulated by external field. The Berry phase, related to the motion of electrons in $k$ space, and the corresponding Chern numbers characterizing topology of the energy bands are calculated analytically and numerically. In this connection, we discuss the anomalous Hall effect in the insulating state, when the Fermi level is located in the minigap. The results of calculations show that in the model of gapless Dirac spectrum of graphene the anomalous Hall effect can be treated as a sum of fractional quantum numbers, related to the nonequivalent Dirac points.

cond-mat.mtrl-sci↗

arXiv2010

Spin dephasing and pumping in graphene due to random spin-orbit interaction

We consider spin effects related to the random spin-orbit interaction in graphene. Such a random interaction can result from the presence of ripples and/or other inhomogeneities at the graphene surface. We show that the random spin-orbit interaction generally reduces the spin dephasing (relaxation) time, even if the interaction vanishes on average. Moreover, the random spin-orbit coupling also allows for spin manipulation with an external electric field. Due to the spin-flip interband as well as intraband optical transitions, the spin density can be effectively generated by periodic electric field in a relatively broad range of frequencies.

cond-mat.mes-hall↗

arXiv2010

Robust to impurity-scattering spin Hall effect in two-dimensional electron gas

We propose a mechanism of spin Hall effect in two-dimensional electron gas with spatially random Rashba spin-orbit interaction. The calculations based on the Kubo formalism and kinetic equation show that in contrast to the constant spin-orbit coupling, spin Hall conductivity in the random spin-orbit field is not totally suppressed by the potential impurity scattering. Even if the regular contribution is removed by the vertex corrections, the terms we consider, remain. Therefore, the intrinsic spin-Hall effect exists being, however, non-universal.

cond-mat.mes-hall↗

arXiv2010

Strong electron spin-Hall effect by a coherent optical potential

We demonstrate theoretically that a coherent manipulation of electron spins in low-dimensional semiconductor structures with spin-orbit coupling by infrared radiation is possible. The proposed approach is based on using a dipole force acting on a two-level system in a nonuniform optical field, similar to that employed in the design of the cold atoms diode. For ballistic electrons the spin-dependent force, proportional to the intensity of external radiation, leads to a spin-Hall effect and resulting spin separation even if the spin-orbit coupling itself does not allow for these effects. Achievable spatial separation of electrons with opposite spins can be of the order of several tenth of a micron, an order of magnitude larger than can be produced by the charged impurity scattering in the diffusive regime.

cond-mat.mes-hall↗