arXiv subjects

V. O'Shea

Publications and source records attributed to V. O'Shea.

8 recordsLinked to original sources

arXiv2016

Medipix3 Demonstration and understanding of near ideal detector performance for 60 & 80 keV electrons

In our article we report first quantitative measurements of imaging performance for the current generation of hybrid pixel detector, Medipix3, as direct electron detector. Utilising beam energies of 60 & 80 keV, measurements of modulation transfer function (MTF) and detective quantum efficiency (DQE) have revealed that, in single pixel mode (SPM), energy threshold values can be chosen to maximize either the MTF or DQE, obtaining values near to, or even exceeding, those for an ideal detector. We have demonstrated that the Medipix3 charge summing mode (CSM) can deliver simultaneous, near ideal values of both MTF and DQE. To understand direct detection performance further we have characterized the detector response to single electron events, building an empirical model which can predict detector MTF and DQE performance based on energy threshold. Exemplifying our findings we demonstrate the Medipix3 imaging performance, recording a fully exposed electron diffraction pattern at 24-bit depth and images in SPM and CSM modes. Taken together our findings highlight that for transmission electron microscopy performed at low energies (energies <100 keV) thick hybrid pixel detectors provide an advantageous and alternative architecture for direct electron imaging

physics.ins-det↗

arXiv2009

The FP420 R&D Project: Higgs and New Physics with forward protons at the LHC

We present the FP420 R&D project, which has been studying the key aspects of the development and installation of a silicon tracker and fast-timing detectors in the LHC tunnel at 420 m from the interaction points of the ATLAS and CMS experiments. These detectors would measure precisely very forward protons in conjunction with the corresponding central detectors as a means to study Standard Model (SM) physics, and to search for and characterise New Physics signals. This report includes a detailed description of the physics case for the detector and, in particular, for the measurement of Central Exclusive Production, pp --> p + phi + p, in which the outgoing protons remain intact and the central system phi may be a single particle such as a SM or MSSM Higgs boson. Other physics topics discussed are gamma-gamma and gamma-p interactions, and diffractive processes. The report includes a detailed study of the trigger strategy, acceptance, reconstruction efficiencies, and expected yields for a particular p p --> p H p measurement with Higgs boson decay in the b-bbar mode. The document also describes the detector acceptance as given by the LHC beam optics between the interaction points and the FP420 location, the machine backgrounds, the new proposed connection cryostat and the moving ("Hamburg") beam-pipe at 420 m, and the radio-frequency impact of the design on the LHC. The last part of the document is devoted to a description of the 3D silicon sensors and associated tracking performances, the design of two fast-timing detectors capable of accurate vertex reconstruction for background rejection at high-luminosities, and the detector alignment and calibration strategy.

hep-ex↗

arXiv1999

Analysis of trap spectra in LEC and epitaxial GaAs

Different methods of trap parameter measurement are analysed. Transient photoconductivity and thermally stimulated effects were used to investigate the influence of traps in LEC SI-GaAs and high resistivity epitaxial GaAs. The peculiarities of the TSC were analysed and shown to be related to the influence of crystal micro-inhomogeneities.

hep-ex↗

arXiv1997

Preliminary Results for LP VPE X-Ray Detectors

Thick epitaxial layers have been grown using Low Pressure Vapour Phase Epitaxy techniques with low free carrier concentrations . This type of material is attractive as a medium for X-ray detection, because of its high conversion efficiency for X-rays in the medically interesting energy range.

physics.ins-det↗

arXiv1997

Radiation Induced Damage in GaAs Particle Detectors

The motivation for investigating the use of GaAs as a material for detecting particles in experiments for High Energy Physics (HEP) arose from its perceived resistance to radiation damage. This is a vital requirement for detector materials that are to be used in experiments at future accelerators where the radiation environments would exclude all but the most radiation resistant of detector types.

physics.ins-det↗

arXiv1997

Recent results on GaAs detectors - 137

The present understanding of the charge collection in GaAs detectors with respect to the materials used and its processing are discussed. The radiation induced degradation of the charge collection efficiency and the leakage current of the detectors are summarised. The status of strip and pixel detectors for the ATLAS experiment are reported along with the latest results from GaAs X-ray detectors for non-high energy physics applications.

physics.ins-det↗

arXiv1997

The effects of radiation on Gallium Arsenide radiation detectors

Semi-insulating, undoped, Liquid Encapsulated Czochralski (SI-U LEC) GaAs detectors have been irradiated with 1MeV neutrons, 24GeV/c protons, and 300MeV/c pions. The maximum fluences used were 6, 3, and 1.8~10$^{14}$ particles/cm$^{2}$ respectively. For all three types of irradiation the charge collection efficiencies (cce) of the detector are reduced due to the reduction in the electron and hole mean free paths. Pion and proton irradiations produce a greater reduction in cce than neutron irradiation with the pions having the greatest effect. The effect of annealing the detectors at room temperature, at 200$^{o}$C and at 450$^{o}$C with a flash lamp have been shown to reduce the leakage current and increase the cce of the irradiated detectors. The flash-lamp anneal produced the greatest increase in the cce from 26% to 70% by increasing the mean free path of the electrons. Two indium-doped samples were irradiated with 24GeV/c protons and demonstrated no improvement over SI U GaAs with respect to post-irradiation cce.

physics.ins-det↗

arXiv1997

Characterisation of low pressure VPE GaAs diodes before and after 24 GeV/c proton irradiation

GaAs Schottky diode detectors have been fabricated upon Low Pressure Vapour Phase Epitaxial GaAs. The devices were characterised before and after a $1.25 \times 10^{14}$~cm$^{-2}$ 24GeV/c proton fluence. The as fabricated Ti-GaAs barrier height was measured, via two electrical methods, to be $0.81\pm0.005$ and $0.85\pm0.01$~eV and a space charge density of $2.8 \pm 0.2 \times 10^{14}$~cm$^{-3}$ was determined. The current was greater than that expected for an ideal barrier with the excess attributed to generation current from the bulk. The charge collection efficiency, determined from front alpha illumination and 60 keV gamma irradiation, was inexcess of 95% at 50V reverse bias. After irradiation the reverse current, measured for a bias of 200V at 20$^{o}$~C, increased from 90~nA to 1500~nA due to radiation induced generation centres. Deep levels were showed to be present using capacitance techniques. The charge collection of the device determined from front alpha illumination fell to $32\pm5$% at a reverse bias of 200V.

physics.ins-det↗