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V. P. Gusynin

Publications and source records attributed to V. P. Gusynin.

At least 37 records · Page 2Linked to original sources

RKKY interaction in a doped pseudospin-1 fermion system at finite temperature

We study the RKKY interaction of magnetic impurities in the $α-\mathcal{T}_3$ model which hosts pseudospin-1 fermions with two dispersive and one flat bands. By using the effective low-energy Hamiltonian we calculate the RKKY coupling for impurities placed on the same or different sublattices. We find that there are three types of interaction, which depend on the model parameter defining the relative strength of hoppings between sublattices, two of them can be reduced to graphene case while the third one is new and is due to the presence of a flat zero-energy band. We derive general analytical expressions for the RKKY interaction in terms of Mellin-Barnes type integrals and analyze different limiting cases. The cases of finite chemical potential and temperature, as well as asymptotic at large distances are considered. We show that the interaction between impurities located at different rim sites displays a very strong temperature dependence at small doping being a direct consequence of the flat band. The subtleties of the theorem for signs of the RKKY interaction at zero doping, as applied to the $\mathcal{T}_3$ lattice, related to the existence of a dispersionless flat band are discussed.

cond-mat.str-el↗

Work function, deformation potential, and collapse of Landau levels in strained graphene and silicene

We perform a systematic {\it ab initio} study of the work function and its uniform strain dependence for graphene and silicene for both tensile and compressive strains. The Poisson ratios associated with armchair and zigzag strains are also computed. Based on these results, we obtain the deformation potential, crucial for straintronics, as a function of the applied strain. Further, we propose a particular experimental setup with a special strain configuration that generates only the electric field, while the pseudomagnetic field is absent. Then, applying a real magnetic field, one should be able to realize experimentally the spectacular phenomenon of the collapse of Landau levels in graphene or related two-dimensional materials.

cond-mat.str-el↗

Electron states for gapped pseudospin-1 fermions in the field of charged impurity

The electron states of gapped pseudospin-1 fermions of the $α-{\cal T}_3$ lattice in the Coulomb field of a charged impurity are studied. The free $α-{\cal T}_3$ model has three dispersive bands with two energy gaps between them depending on the parameter $Θ$ which controls the coupling of atoms of honeycomb lattice with atoms in the center of each hexagon, thus, interpolating between graphene $Θ=0$ and the dice model $Θ=π/4$. The middle band becomes flat one with zero energy in the dice model. The bound electron states are found in the two cases: the centrally symmetric potential well and a regularized Coulomb potential of the charged impurity. As the charge of impurity increases, bound state energy levels descend from the upper and central continua and dive at certain critical charges into the central and lower continuum, respectively. In the dice model, it is found that the flat band survives in the presence of a potential well, however, is absent in the case of the Coulomb potential. The analytical results are presented for the energy levels near continuum boundaries in the potential well. For the genuine Coulomb potential, we present the recursion relations that determine the coefficients of the series expansion of wave functions of bound states. It is shown that the condition for the termination of the series expansion gives two equations relating energy and charge values. Hence, analytical solutions can exist for a countably infinite set of values of impurity charge at fixed $Θ$.

cond-mat.str-el↗

Electronic states of pseudospin-1 fermions in dice lattice ribbons

Boundary conditions for the two-dimensional fermions in ribbons of the hexagonal lattice are studied in the dice model whose energy spectrum in infinite system consists of three bands with one completely flat band of zero energy. Like in graphene the regular lattice terminations are of the armchair and zigzag types. However, there are four possible zigzag edge terminations in contrast to graphene where only one type of zigzag termination is possible. Determining the boundary conditions for these lattice terminations, the energy spectra of pseudospin-1 fermions in dice model ribbons with zigzag and armchair boundary conditions are found. It is shown that the energy levels for armchair ribbons display the same features as in graphene except the zero energy flat band inherent to the dice model. In addition, unlike graphene, there are no propagating edge states localized at zigzag boundary and there are specific zigzag terminations which give rise to bulk modes of a metallic type in dice model ribbons. We find that the existence of the flat zero-energy band in the dice model is very robust and is not affected by the zigzag and armchair boundaries.

cond-mat.str-el↗

Entropy Signatures of Topological Phase Transitions

We review the behavior of the entropy per particle in various two-dimensional electronic systems. The entropy per particle is an important characteristic of any many body system that tells how the entropy of the ensemble of electrons changes if one adds one more electron. Recently, it has been demonstrated how the entropy per particle of a two-dimensional electron gas can be extracted from the recharging current dynamics in a planar capacitor geometry. These experiments pave the way to the systematic studies of entropy in various crystal systems including novel two-dimensional crystals such as gapped graphene, germanene and silicene. Theoretically, the entropy per particle is linked to the temperature derivative of the chemical potential of the electron gas by the Maxwell relation. Using this relation, we calculate the entropy per particle in the vicinity of topological transitions in various two-dimensional electronic systems. We show that the entropy experiences quantized steps at the points of Lifshitz transitions in a two-dimensional electronic gas with a parabolic energy spectrum. In contrast, in doubled-gapped Dirac materials, the entropy per particles demonstrates characteristic spikes once the chemical potential passes through the band edges. The transition from a topological to trivial insulator phase in germanene is manifested by the disappearance of a strong zero-energy resonance in the entropy per particle dependence on the chemical potential. We conclude that studies of the entropy per particle shed light on multiple otherwise hidden peculiarities of the electronic band structure of novel two-dimensional crystals.

cond-mat.mes-hall↗

Electron states in the field of charged impurities in two-dimensional Dirac systems

We review the theoretical and experimental results connected with the electron states in two-dimensional Dirac systems paying a special attention to the atomic collapse in graphene. Two-electron bound states of a Coulomb impurity are considered too. A rather subtle role of a magnetic field in the supercritical charge problem in graphene is discussed. The electron states in the field of two equally charged impurities are studied and the conditions for supercritical instability to occur are determined. It is shown that the supercriticality of novel type is realized in gapped graphene with two unlikely charged impurities. For sufficiently large charges of impurities, it is found that the wave function of the occupied electron bound state of the highest energy changes its localization from the negatively charged impurity to the positively charged one as the distance between the impurities increases. The specifics of the atomic collapse in bilayer graphene is considered and it is shown that the atomic collapse in this material is not related to the phenomenon of the fall-to-center.

cond-mat.str-el↗

Detection of topological phase transitions through entropy measurements: the case of germanene

We propose a characterization tool for studies of the band structure of new materials promising for the observation of topological phase transitions. We show that a specific resonant feature in the entropy per electron dependence on the chemical potential may be considered as a fingerprint of the transition between topological and trivial insulator phases. The entropy per electron in a honeycomb two-dimensional crystal of germanene subjected to the external electric field is obtained from the first principle calculation of the density of electronic states and the Maxwell relation. We demonstrate that, in agreement to the recent prediction of the analytical model, strong spikes in the entropy per particle dependence on the chemical potential appear at low temperatures. They are observed at the values of the applied bias both below and above the critical value that corresponds to the transition between the topological insulator and trivial insulator phases, while the giant resonant feature in the vicinity of zero chemical potential is strongly suppressed at the topological transition point, in the low temperature limit. In a wide energy range, the van Hove singularities in the electronic density of states manifest themselves as zeros in the entropy per particle dependence on the chemical potential.

cond-mat.mes-hall↗

Entropy per particle spikes in the transition metal dichalcogenides

We derive a general expression for the entropy per particle as a function of chemical potential, temperature and gap magnitude for the single layer transition metal dichalcogenides. The electronic excitations in these materials can be approximately regarded as two species of the massive or gapped Dirac fermions. Inside the smaller gap there is a region with zero density of states where the dependence of the entropy per particle on the chemical potential exhibits a huge dip-and-peak structure. The edge of the larger gap is accompanied by the discontinuity of the density of states that results in the peak in the dependence of the entropy per particle on the chemical potential. The specificity of the transition metal dichalcogenides makes possible the observation of these features at rather high temperatures order of 100 K. The influence of the uniaxial strain on the entropy per particle is discussed.

cond-mat.mes-hall↗

Coulomb center instability in bilayer graphene

In the low-energy two-band as well as four-band continuum models, we study the supercritical instability in gapped bilayer graphene in the field of a charged impurity. It is found that the screening effects are crucially important in bilayer graphene. If they are neglected, then the critical value for the impurity charge as the lowest-energy bound state dives into the lower continuum tends to zero as the gap $Δ$ vanishes. If the screened Coulomb interaction is considered, then the critical charge tends to a finite value for $Δ\to 0$. The different scalings of the kinetic energy of quasiparticles and the Coulomb interaction with respect to the distance to the charged impurity ensure that the wave function of the electron bound state does not shrink toward the impurity as its charge increases. This results in the absence of the fall-to-center phenomenon in bilayer graphene although the supercritical instability is realized.

cond-mat.str-el↗

Entropy spikes as a signature of Lifshitz transitions in the Dirac materials

We demonstrate theoretically that the characteristic feature of a 2D system undergoing $N$ consequent Lifshitz topological transitions is the occurrence of spikes of entropy per particle $s$ of a magnitude $\pm \ln 2/(J-1/2)$ with $2 \leq J \leq N$ at low temperatures. We derive a general expression for $s$ as a function of chemical potential, temperature and gap magnitude for the gapped Dirac materials. Inside the smallest gap, the dependence of $s$ on the chemical potential exhibits a dip-and-peak structure in the temperature vicinity of the Dirac point. The spikes of the entropy per particles can be considered as a signature of the Dirac materials. These distinctive characteristics of gapped Dirac materials can be detected in transport experiments where the temperature is modulated in gated structures.

cond-mat.mes-hall↗

Broken symmetry states in bilayer graphene in electric and in-plane magnetic fields

Broken symmetry states in bilayer graphene in perpendicular electric $E_\perp$ and in-plane magnetic $B_\parallel$ fields are studied in the presence of the dynamically screened long-range Coulomb interaction and the symmetry-breaking contact four-fermion interactions. The integral gap equations are solved numerically, and it is shown that the momentum dependence of gaps is essential: It diminishes by an order of magnitude the gaps compared to the case of momentum-independent approximation, and the obtained gap magnitudes are found to agree well with existing experimental values. We derived a phase diagram of bilayer graphene at the neutrality point in the plane $(B_\parallel,E_\perp)$ showing that the (canted) layer antiferromagnetic (LAF) state remains a stable ground state of the system at large $B_\parallel$. On the other hand, while the LAF phase is realized at small values of $E_{\perp}$, the quantum valley Hall (QVH) phase is the ground state of the system at values $E_{\perp}>E_{cr}(B_\parallel)$, where a critical value $E_{cr}(B_\parallel)$ increases with in-plane magnetic field $B_{||}$.

cond-mat.str-el↗

Critical number of fermions in three-dimensional QED

Previous analytical studies of quantum electrodynamics in $2+1$ dimensions (QED3) have shown the existence of a critical number of fermions for onset of chiral symmetry breaking, the most known being the value $N_c\approx3.28$ obtained by Nash to $1/N^2$ order in the $1/N$ expansion [16]. This analysis is reconsidered by solving the Dyson-Schwinger equations for the fermion propagator and the vertex to show that the more accurate gauge independent value is $N_c\approx2.85$, and for $N<N_c$ the chiral symmetry is dynamically broken. An estimate for the value of chiral condensate $\langle\barψψ\rangle$ is given for $N=2$. Knowing precise $N_c$ would be important for comparison between continuum studies and lattice simulations of QED3.

hep-ph↗

Screening of a charged impurity in graphene in a magnetic field

The electron states in the field of a charged impurity in graphene in a magnetic field are studied numerically. It is shown that a charged impurity removes the degeneracy of Landau levels converting them into bandlike structures. As the charge of impurity grows, the repulsion of sublevels of different Landau levels with the same value of orbital momentum takes place leading to the redistribution of the wave function profiles of these sublevels near the impurity. By studying the polarization effects, it is shown in agreement with the recent experiments that the effective charge of impurity can be very effectively tuned by chemical potential. If the chemical potential is situated inside a Landau level, then the charge of impurity is strongly diminished. In addition, the polarization function in this case has a peak at zero momentum, which leads to the sign-changing oscillations of the screened potential as a function of distance. If the chemical potential lies between the Landau levels, then the screened potential does not change sign, the screening is minimal, and the charged impurity can strongly affect the electron spectrum.

cond-mat.mes-hall↗

Transport properties of AB stacked (Bernal) bilayer graphene on and without substrate within 2- and 4-band approximations

We present the results of the calculations of longitudinal and Hall conductivities of AB-stacked bilayer graphene as a function of frequency, finite chemical potential, temperature both with and without magnetic fields on a base of 2- and 4-band effective models. The limited cases of the conductivities for direct current are derived. The relations being important for optoelectronic among Hall conductivities and Faraday, Kerr angles in the AB-bilayers samples in the electric and magnetic fields when the radiation passes across bilayer sheets on different kinds a substrate are obtained.

cond-mat.mes-hall↗

Supercriticality of novel type induced by electric dipole in gapped graphene

We reveal a new type of supercritical behavior in gapped graphene with two oppositely charged impurities by studying the two-dimensional Dirac equation for quasiparticles with the Coulomb potential regularized at small distances accounting the lattice effects. By utilizing the variational Galerkin--Kantorovich method, we show that for supercritical electric dipole the wave function of the electron bound state changes its localization from the negatively charged impurity to the positively charged one as the distance between the impurities changes. Such a migration of the wave function corresponds to the electron and hole spontaneously created from the vacuum in bound states screening the positively and negatively charged impurities of the supercritical electric dipole, respectively. We generalize our results to a particle-hole asymmetric case, where the charges of impurities differ in signs and absolute values and demonstrate that the necessary energetic condition for the supercriticality of novel type to occur is that the energy levels of single positively and negatively charged impurities traverse together the energy distance separating the upper and lower continua. The robustness of the supercriticality of novel type is confirmed by the study of an exactly solvable 1D problem of the Dirac equation with the square well and barrier potential modeling an electric dipole potential.

cond-mat.str-el↗

Supercritical electric dipole and migration of electron wave function in graphene

We study the Dirac equation for quasiparticles in gapped graphene with two oppositely charged impurities by using the technique of linear combination of atomic orbitals and variational Galerkin--Kantorovich method. We show that for sufficiently large charges of impurities the wave function of the occupied electron bound state of the highest energy changes its localization from the negatively charged impurity to the positively charged one as the distance between the impurities increases. This migration of the electron wave function of supercritical electric dipole is a generalization of the familiar phenomenon of the atomic collapse of single charged impurity to the case where electron-hole pairs are spontaneously created from vacuum in bound states with charge impurities thus partially screening them.

cond-mat.str-el↗

Gap generation and phase diagram in strained graphene in a magnetic field

The gap equation for Dirac quasiparticles in monolayer graphene in constant magnetic and pseudomagnetic fields, where the latter is due to strain, is studied in a low-energy effective model with contact interactions. Analyzing solutions of the gap equation, the phase diagram of the system in the plane of pseudomagnetic and parallel magnetic fields is obtained in the approximation of the lowest Landau level. The three quantum Hall states, ferromagnetic, antiferromagnetic, and canted antiferromagnetic, are realized in different regions of the phase diagram. It is found that the structure of the phase diagram is sensitive to signs and values of certain four-fermion interaction couplings which break the approximate spin-value SU(4) symmetry of the model.

cond-mat.str-el↗

Anomalous thermospin effect in the low-buckled Dirac materials

A strong spin Nernst effect with nontrivial dependences on the carrier concentration and electric field applied is expected in silicene and other low-buckled Dirac materials. These Dirac materials can be considered as being made of two independent electron subsystems of the two-component gapped Dirac fermions. For each subsystem the gap breaks a time-reversal symmetry and thus plays a role of an effective magnetic field. Accordingly, the standard Kubo formalism has to be altered by including the effective magnetization in order to satisfy the third law of thermodynamics. We explicitly demonstrate this by calculating the magnetization and showing how the correct thermoelectric coefficient emerges.

cond-mat.mes-hall↗