arXiv subjects

V. Sola

Publications and source records attributed to V. Sola.

28 records · Page 2Linked to original sources

arXiv2020

Effect of deep gain layer and Carbon infusion on LGAD radiation hardness

The properties of 50 um thick Low Gain Avalanche Diode (LGAD) detectors manufactured by Hamamatsu photonics (HPK) and Fondazione Bruno Kessler (FBK) were tested before and after irradiation with 1 MeV neutrons. Their performance were measured in charge collection studies using b-particles from a 90Sr source and in capacitance-voltage scans (C-V) to determine the bias to deplete the gain layer. Carbon infusion to the gain layer of the sensors was tested by FBK in the UFSD3 production. HPK instead produced LGADs with a very thin, highly doped and deep multiplication layer. The sensors were exposed to a neutron fluence from 4e14 neq/cm2 to 4e15 neq/cm2. The collected charge and the timing resolution were measured as a function of bias voltage at -30C, furthermore the profile of the capacitance over voltage of the sensors was measured.

physics.ins-det↗

arXiv2020

Properties of HPK UFSD after neutron irradiation up to 6e15 n/cm2

In this paper we report results from a neutron irradiation campaign of Ultra-Fast Silicon Detectors (UFSD) with fluences of 1e14, 3e14, 6e14, 1e15, 3e15, 6e15 n/cm2. The UFSD used in this study are circular 50 micro-meter thick Low-Gain Avalanche Detectors (LGAD), with a 1.0 mm diameter active area. They have been produced by Hamamatsu Photonics (HPK), Japan, with pre-radiation internal gain in the range 10-100 depending on the bias voltage. The sensors were tested pre-irradiation and post-irradiation with minimum ionizing particle (MIPs) from a 90Sr based \b{eta}-source. The leakage current, internal gain and the timing resolution were measured as a function of bias voltage at -20C and -30C. The timing resolution was extracted from the time difference with a second calibrated UFSD in coincidence, using the constant fraction method for both. The dependence of the gain upon the irradiation fluence is consistent with the concept of acceptor removal and the gain decreases from about 80 pre-irradiation to 7 after a fluence of 6e15 n/cm2. Consequently, the timing resolution was found to deteriorate from 20 ps to 50 ps. The results indicate that the most accurate time resolution is obtained at a value of the constant fraction discriminator (CFD) threshold used to determine the time of arrival varying with fluence, from 10% pre-radiation to 60% at the highest fluence. Key changes to the pulse shape induced by irradiation, i.e. (i) a reduce sensitivity of the pulse shape on the initial non-uniform charge deposition, (ii) the shortening of the rise time and (iii) the reduced pulse height, were compared with the WF2 simulation program and found to be in agreement.

physics.ins-det↗

arXiv2020

Silicon Sensors for Future Particle Trackers

Several future high-energy physics facilities are currently being planned. The proposed projects include high energy $e^+ e^-$ circular and linear colliders, hadron colliders and muon colliders, while the Electron-Ion Collider (EIC) has already been approved for construction at the Brookhaven National Laboratory. Each proposal has its own advantages and disadvantages in term of readiness, cost, schedule and physics reach, and each proposal requires the design and production of specific new detectors. This paper first presents the performances required to the future silicon tracking systems at the various new facilities, and then it illustrates a few possibilities for the realization of such silicon trackers. The challenges posed by the future facilities require a new family of silicon detectors, where features such as impact ionization, radiation damage saturation, charge sharing, and analog readout are exploited to meet these new demands.

physics.ins-det↗

arXiv2020

A new detector for the beam energy measurement in proton therapy: a feasibility study

Fast procedures for the beam quality assessment and for the monitoring of beam energy modulations during the irradiation are among the most urgent improvements in particle therapy. Indeed, the online measurement of the particle beam energy could allow assessing the range of penetration during treatments, encouraging the development of new dose delivery techniques for moving targets. Towards this end, the proof of concept of a new device, able to measure in a few seconds the energy of clinical proton beams (from 60 to 230 MeV) from the Time of Flight (ToF) of protons, is presented. The prototype consists of two Ultra Fast Silicon Detector (UFSD) pads, featuring an active thickness of 80 um and a sensitive area of 3 x 3 mm2, aligned along the beam direction in a telescope configuration, connected to a broadband amplifier and readout by a digitizer. Measurements were performed at the Centro Nazionale di Adroterapia Oncologica (CNAO, Pavia, Italy), at five different clinical beam energies and four distances between the sensors (from 7 to 97 cm) for each energy. In order to derive the beam energy from the measured average ToF, several systematic effects were considered, Monte Carlo simulations were developed to validate the method and a global fit approach was adopted to calibrate the system. The results were benchmarked against the energy values obtained from the water equivalent depths provided by CNAO. Deviations of few hundreds of keV have been achieved for all considered proton beam energies for both 67 and 97 cm distances between the sensors and few seconds of irradiation were necessary to collect the required statistics. These preliminary results indicate that a telescope of UFSDs could achieve in a few seconds the accuracy required for the clinical application and therefore encourage further investigations towards the improvement and the optimization of the present prototype.

physics.med-ph↗

arXiv2020

Proprieties of FBK UFSDs after neutron and proton irradiation up to 6*10e15 neq/cm2

The properties of 60-μm thick Ultra-Fast Silicon Detectors (UFSD) detectors manufactured by Fondazione Bruno Kessler (FBK), Trento (Italy) were tested before and after irradiation with minimum ionizing particles (MIPs) from a 90Sr \b{eta}-source . This FBK production, called UFSD2, has UFSDs with gain layer made of Boron, Boron low-diffusion, Gallium, Carbonated Boron and Carbonated. The irradiation with neutrons took place at the TRIGA reactor in Ljubljana, while the proton irradiation took place at CERN SPS. The sensors were exposed to a neutron fluence of 4*10e14, 8*1014, 1.5*10e15, 3*10e15, 6*10e15 neq/cm2 and to a proton fluence of 9.6*10e14 p/cm2, equivalent to a fluence of 6*10e14 neq/cm2. The internal gain and the timing resolution were measured as a function of bias voltage at -20C. The timing resolution was extracted from the time difference with a second calibrated UFSD in coincidence, using the constant fraction method for both.

physics.ins-det↗

arXiv2018

First FBK Production of 50$μ$m Ultra-Fast Silicon Detectors

Fondazione Bruno Kessler (FBK, Trento, Italy) has recently delivered its first 50 $μ$m thick production of Ultra-Fast Silicon Detectors (UFSD), based on the Low-Gain Avalanche Diode design. These sensors use high resistivity Si-on-Si substrates, and have a variety of gain layer doping profiles and designs based on Boron, Gallium, Carbonated Boron and Carbonated Gallium to obtain a controlled multiplication mechanism. Such variety of gain layers will allow identifying the most radiation hard technology to be employed in the production of UFSD, to extend their radiation resistance beyond the current limit of $ϕ\sim$ 10$^{15}$ n$_{eq}$/cm$^2$. In this paper, we present the characterisation, the timing performances, and the results on radiation damage tolerance of this new FBK production.

physics.ins-det↗

arXiv2018

Radiation resistant LGAD design

In this paper, we report on the radiation resistance of 50-micron thick LGAD detectors manufactured at the Fondazione Bruno Kessler employing several different doping combinations of the gain layer. LGAD detectors with gain layer doping of Boron, Boron low-diffusion, Gallium, Carbonated Boron and Carbonated Gallium have been designed and successfully produced. These sensors have been exposed to neutron fluences up to $ϕ_n \sim 3 \cdot 10^{16}\; n/cm^2$ and to proton fluences up to $ϕ_p \sim 9\cdot10^{15}\; p/cm^2$ to test their radiation resistance. The experimental results show that Gallium-doped LGADs are more heavily affected by initial acceptor removal than Boron-doped LGAD, while the presence of Carbon reduces initial acceptor removal both for Gallium and Boron doping. Boron low-diffusion shows a higher radiation resistance than that of standard Boron implant, indicating a dependence of the initial acceptor removal mechanism upon the implant width. This study also demonstrates that proton irradiation is at least twice more effective in producing initial acceptor removal, making proton irradiation far more damaging than neutron irradiation.

physics.ins-det↗

arXiv2017

Test Beam Performance Measurements for the Phase I Upgrade of the CMS Pixel Detector

A new pixel detector for the CMS experiment was built in order to cope with the instantaneous luminosities anticipated for the Phase~I Upgrade of the LHC. The new CMS pixel detector provides four-hit tracking with a reduced material budget as well as new cooling and powering schemes. A new front-end readout chip mitigates buffering and bandwidth limitations, and allows operation at low comparator thresholds. In this paper, comprehensive test beam studies are presented, which have been conducted to verify the design and to quantify the performance of the new detector assemblies in terms of tracking efficiency and spatial resolution. Under optimal conditions, the tracking efficiency is $99.95\pm0.05\,\%$, while the intrinsic spatial resolutions are $4.80\pm0.25\,μ\mathrm{m}$ and $7.99\pm0.21\,μ\mathrm{m}$ along the $100\,μ\mathrm{m}$ and $150\,μ\mathrm{m}$ pixel pitch, respectively. The findings are compared to a detailed Monte Carlo simulation of the pixel detector and good agreement is found.

physics.ins-det↗

arXiv2017

Test of UFSD Silicon Detectors for the TOTEM Upgrade Project

This paper describes the performance of a prototype timing detector, based on 50 micrometer thick Ultra Fast Silicon Detector, as measured in a beam test using a 180 GeV/c momentum pion beam. The dependence of the time precision on the pixel capacitance and the bias voltage is investigated here. A timing precision from 30 ps to 100 ps, depending on the pixel capacitance, has been measured at a bias voltage of 180 V. Timing precision has also been measured as a function of the bias voltage.

physics.ins-det↗

arXiv2017

Beam test results of a 16 ps timing system based on ultra-fast silicon detectors

In this paper we report on the timing resolution of the first production of 50 micro-meter thick Ultra-Fast Silicon Detectors (UFSD) as obtained in a beam test with pions of 180 GeV/c momentum. UFSD are based on the Low-Gain Avalanche Detectors (LGAD) design, employing n-on-p silicon sensors with internal charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction. The UFSD used in this test belongs to the first production of thin (50 μm) sensors, with an pad area of 1.4 mm2. The gain was measured to vary between 5 and 70 depending on the bias voltage. The experimental setup included three UFSD and a fast trigger consisting of a quartz bar readout by a SiPM. The timing resolution, determined comparing the time of arrival of the particle in one or more UFSD and the trigger counter, for single UFSD was measured to be 35 ps for a bias voltage of 200 V, and 26 ps for a bias voltage of 240 V, and for the combination of 3 UFSD to be 20 ps for a bias voltage of 200 V, and 15 ps for a bias voltage of 240 V.

physics.ins-det↗