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V. Yu. Kachorovskii

Publications and source records attributed to V. Yu. Kachorovskii.

At least 55 records · Page 3Linked to original sources

Rippling and crumpling in disordered free-standing graphene

Graphene is a famous realization of elastic crystalline 2D membrane. Thermal fluctuations of a 2D membrane tend to destroy the long-range order in the system. Such fluctuations are stabilized by strong anharmonicity effects, which preserve thermodynamic stability. The anharmonic effects demonstrate critical behaviour on scales larger than the Ginzburg scale. In particular, clean suspended flake of graphene shows a power-law increase of the bending rigidity with the system size, $\varkappa\propto L^η,$ due to anharmonic interaction between in-plane and out-of-plane (flexural) phonon modes. We demonstrate that random fluctuations of membrane curvature caused by static disorder may change dramatically the scaling of the bending rigidity and lead to a non-monotonous dependence of $\varkappa$ on $L.$ We derive coupled RG describing combined flow of $\varkappa$ and effective disorder strength $b$, find a critical curve $b(\varkappa)$ separating flat and crumpled phases, and explore the behavior of disorder in the flat phase. Deep in the flat phase, disorder decays in a power-law way at scales larger than the Ginzburg length which therefore sets a characteristic size for the ripples--static out-of-plane deformations observed experimentally in suspended graphene. We find that in the limit $L \to \infty $ ripples are characterized by anomalous exponent $2η$ in contrast to dynamical fluctuations governed by $η$. For sufficiently strong disorder, there exists an intermediate range of spatial scales where ripples decay much slower, with exponent $η/4$. In the near-critical regime, the membrane shows fractal properties implying a multiple folding starting from a certain length scale $L_1$ and finally flattens at a much larger scale $L_2$ (which diverges at criticality). We conclude the paper by a comparison of our results with available experimental data on graphene ripples.

cond-mat.dis-nn↗

Ratchet effect enhanced by plasmons

Ratchet effect -- a {\it dc} current induced by the electromagnetic wave impinging on the spatially modulated two-dimensional (2D) electron liquid -- occurs when the wave amplitude is spatially modulated with the same wave vector as the 2D liquid but is shifted in phase. The analysis within the framework of the hydrodynamic model shows that the ratchet current is dramatically enhanced in the vicinity of the plasmonic resonances and has nontrivial polarization dependence. In particular, for circular polarization, the current component, perpendicular to the modulation direction, changes sign with the inversion of the radiation helicity. Remarkably, in the high-mobility structures, this component might be much larger than the the current component in the modulation direction. We also discuss the non-resonant regime realized in dirty systems, where the plasma resonances are suppressed, and demonstrate that the non-resonant ratchet current is controlled by the Maxwell relaxation in the 2D liquid.

cond-mat.mes-hall↗

Magnetoresistance in two-component systems

Two-component systems with equal concentrations of electrons and holes exhibit non-saturating, linear magnetoresistance in classically strong magnetic fields. The effect is predicted to occur in finite-size samples at charge neutrality in both disorder- and interaction-dominated regimes. The phenomenon originates in the excess quasiparticle density developing near the edges of the sample due to the compensated Hall effect. The size of the boundary region is of the order of the electron-hole recombination length that is inversely proportional to the magnetic field. In narrow samples and at strong enough magnetic fields, the boundary region dominates over the bulk leading to linear magnetoresistance. Our results are relevant for semimetals and narrow-band semiconductors including most of the topological insulators.

cond-mat.mes-hall↗

Quantum interference in HgTe structures

We study quantum transport in HgTe/HgCdTe quantum wells under the condition that the chemical potential is located outside of the bandgap. We first analyze symmetry properties of the effective Bernevig-Hughes-Zhang Hamiltonian and the relevant symmetry-breaking perturbations. Based on this analysis, we overview possible patterns of symmetry breaking that govern the quantum interference (weak localization or weak antilocalization) correction to the conductivity in two dimensional HgTe/HgCdTe samples. Further, we perform a microscopic calculation of the quantum correction beyond the diffusion approximation. Finally, the interference correction and the low-field magnetoresistance in a quasi-one-dimensional geometry are analyzed.

cond-mat.mes-hall↗

Interference-induced magnetoresistance in HgTe quantum wells

We study the quantum interference correction to the conductivity in HgTe quantum wells using the Bernevig-Hughes-Zhang model. This model consists of two independent species (blocks) of massive Dirac fermions. We describe the crossover between the orthogonal and symplectic classes with the increasing the carrier concentration and calculate, respectively, weak localization and antilocalization corrections in the absence of the block mixing and assuming the white-noise disorder within each block. We have calculated the interference-induced magnetoresistance in a wide interval of magnetic fields, in particular, beyond the diffusion regime. Remarkably, each Dirac cone taken separately gives a linear contribution to the low-field magnetoresistance, which turns out to be asymmetric in magnetic field $B$. We present an interpretation of this result in terms of the Berry phase formalism. The contributions of the two blocks are related to each other by replacing $B$ to $-B$, so that the total magnetoresistance is symmetric and parabolic in the limit $B\to 0$. However, in some range of parameters field dependence turns out to be strongly non-monotonous. We also demonstrate that block mixing gives rise to additional singular diffusive modes which do not show up in the absence of mixing.

cond-mat.mes-hall↗

Aharonov-Bohm conductance of a disordered single-channel quantum ring

We study the effect of weak disorder on tunneling conductance of a single-channel quantum ring threaded by magnetic flux. We assume that temperature is higher than the level spacing in the ring and smaller than the Fermi energy. In the absence of disorder, the conductance shows sharp dips (antiresonances) as a function of magnetic flux. We discuss different types of disorder and find that the short-range disorder broadens antiresonances, while the long-range one leads to arising of additional resonant dips. We demonstrate that the resonant dips have essentially non-Lorentzian shape. The results are generalized to account for the spin-orbit interaction which leads to splitting of the disorder-broadened resonant dips, and consequently to coexisting of two types of oscillations (both having the form of sharp dips): Aharonov-Bohm oscillations with magnetic flux and Aharonov-Casher oscillations with the strength of the spin-orbit coupling. We also discuss the effect of the Zeeman coupling.

cond-mat.mes-hall↗

Strong magnetoresistance of disordered graphene

We study theoretically magnetoresistance (MR) of graphene with different types of disorder. For short-range disorder, the key parameter determining magnetotransport properties---a product of the cyclotron frequency and scattering time---depends in graphene not only on magnetic field $H$ but also on the electron energy $\varepsilon$. As a result, a strong, square-root in $H$, MR arises already within the Drude-Boltzmann approach. The MR is particularly pronounced near the Dirac point. Furthermore, for the same reason, "quantum" (separated Landau levels) and "classical" (overlapping Landau levels) regimes may coexist in the same sample at fixed $H.$ We calculate the conductivity tensor within the self-consistent Born approximation for the case of relatively high temperature, when Shubnikov-de Haas oscillations are suppressed by thermal averaging. We predict a square-root MR both at very low and at very high $H:$ $[\varrho_{xx}(H)-\varrho_{xx}(0)]/\varrho_{xx}(0)\approx C \sqrt{H},$ where $C$ is a temperature-dependent factor, different in the low- and strong-field limits and containing both "quantum" and "classical" contributions. We also find a nonmonotonic dependence of the Hall coefficient both on magnetic field and on the electron concentration. In the case of screened charged impurities, we predict a strong temperature-independent MR near the Dirac point. Further, we discuss the competition between disorder- and collision-dominated mechanisms of the MR. In particular, we find that the square-root MR is always established for graphene with charged impurities in a generic gated setup at low temperature.

cond-mat.dis-nn↗

Performance Limits for Field Effect Transistors as Terahertz Detectors

We present estimates of the performance limits of terahertz detectors based on the field effect transistors (FET) in the regime of broadband detection. The maximal responsivity is predicted for short-channel FETs in the subthreshold regime. We also calculate the conversion efficiency Q of the device defined as the ratio of the power dissipated by radiation-induced dc current to the THz dissipated power. We show that Q has an absolute maximum as a function of two variables: the power and the frequency of the incoming radiation. The maximal value of Q is on the order of 10%

cond-mat.mes-hall↗

Conductivity of suspended graphene at the Dirac point

We study transport properties of clean suspended graphene at the Dirac point. In the absence of the electron-electron interaction, the main contribution to resistivity comes from interaction with flexural (out-of-plane deformation) phonons. We find that the phonon-limited conductivity scales with the temperature as $T^{-η}, $ where $η$ is the critical exponent (equal to $\approx 0.7$ according to numerical studies) describing renormalization of the flexural phonon correlation functions due to anharmonic coupling with the in-plane phonons. The electron-electron interaction induces an additional scattering mechanism and also affects the electron-phonon scattering by screening the deformation potential. We demonstrate that the combined effect of both interactions results in a conductivity that can be expressed as a dimensionless function of two temperature-dependent dimensionless constants, $G[T]$ and $G_e[T]$ which characterize the strength of electron-phonon and electron-electron interaction, respectively. We also discuss the behavior of conductivity away from the Dirac point as well as the role of the impurity potential and compare our predictions with available experimental data.

cond-mat.mes-hall↗

High-temperature Aharonov-Bohm-Casher interferometer

We study theoretically the combined effect of the spin-orbit and Zeeman interactions on the tunneling electron transport through a single-channel quantum ring threaded by magnetic flux. We focus on the high temperature case (temperature is much higher than the level spacing in the ring) and demonstrate that spin-interference effects are not suppressed by thermal averaging. In the absence of the Zeeman coupling the high-temperature tunneling conductance of the ring exhibits two types of oscillations: Aharonov-Bohm oscillations with magnetic flux and Aharonov-Casher oscillations with the strength of the spin-orbit interaction. For weak tunneling coupling both oscillations have the form of sharp periodic antiresonances. In the vicinity of the antiresonances the tunneling electrons acquire spin polarization, so that the ring serves as a spin polarizer. We also demonstrate that the Zeeman coupling leads to appearance of two additional peaks both in the tunneling conductance and in the spin polarization.

cond-mat.mes-hall↗

Tunneling into a Luttinger liquid revisited

We study how electron-electron interactions renormalize tunneling into a Luttinger liquid beyond the lowest order of perturbation in the tunneling amplitude. We find that the conventional fixed point has a finite basin of attraction only in the point contact model, but a finite size of the contact makes it generically unstable to the tunneling-induced break up of the liquid into two independent parts. In the course of renormalization to the nonperturbative-in-tunneling fixed point, the tunneling conductance may show a nonmonotonic behavior with temperature or bias voltage.

cond-mat.str-el↗

Electron spin decoherence in diluted magnetic quantum wells

We study electron spin dynamics in diluted magnetic quantum wells. The electrons are coupled by exchange interaction with randomly distributed magnetic ions polarized by magnetic field. This coupling leads to both spin relaxation and spin decoherence. We demonstrate that even very small spatial fluctuations of quantum well width dramatically increase rate of decoherence. Depending on the strength of exchange interaction and the amplitude of the fluctuations the decoherence can be homogeneous or inhomogeneous. In the homogeneous regime, the transverse (with respect to magnetic field) component of the electron spin decays on the short time scale exponentialy, while the long-time spin dynamics is non-exponential demonstrating long-lived power law tail. In the inhomogeneous case, the transverse spin component decays exponentially with the exponent quadratic in time.

cond-mat.mes-hall↗

Spin waves in diluted magnetic quantum wells

We study collective spin excitations in two-dimensional diluted magnetic semiconductors, placed into external magnetic field. Two coupled modes of the spin waves (the electron and ion modes) are found to exist in the system along with a number of the ion spin excitations decoupled from the electron system. We calculate analytically the spectrum of the waves taking into account the exchange interaction of itinerant electrons both with each other and with electrons localized on the magnetic ions. The interplay of these interactions leads to a number of intriguing phenomena including tunable anticrossing of the modes and a field-induced change in a sign of the group velocity of the ion mode.

cond-mat.mes-hall↗

Aharonov-Bohm conductance through a single-channel quantum ring: Persistent-current blockade and zero-mode dephasing

We study the effect of electron-electron interaction on transport through a tunnel-coupled single-channel ring. We find that the conductance as a function of magnetic flux shows a series of interaction-induced resonances that survive thermal averaging. The period of the series is given by the interaction strength $α$. The physics behind this behavior is the blocking of the tunneling current by the circular current. The main mechanism of dephasing is due to circular-current fluctuations. The dephasing rate is proportional to the tunneling rate and does not depend on $α$.

cond-mat.str-el↗

Terahertz Response of Field-Effect Transistors in Saturation Regime

We report on the broadband THz response of InGaAs/GaAs HEMTs operating at 1.63 THz and room temperature deep in the saturation regime. We demonstrate that responses show linear increase with drain-to-source voltage (or drain bias current) and reach very high values up to 170V/W. We also develop a phenomenological theory valid both in the ohmic and in the saturation regimes.

physics.ins-det↗

Sharp Magnetic Field Dependence of the 2D Hall Coefficient Induced by Classical Memory Effects

We show that a sharp dependence of the Hall coefficient $R$ on the magnetic field $B$ arises in two-dimensional electron systems with randomly located strong scatterers. The phenomenon is due to classical memory effects. We calculate analytically the dependence $R(B)$ for the case of scattering by hard disks of radius $a$, randomly distributed with concentration $n_0\ll1/a^2$. We demonstrate that in very weak magnetic fields ($ω_cτ\lesssim n_0a^2$) memory effects lead to a considerable renormalization of the Boltzmann value of the Hall coefficient: $δR / R \sim 1 .$ With increasing magnetic field, the relative correction to $R$ decreases, then changes sign, and saturates at the value $δR / R \sim -n_0a^2 .$ We also discuss the effect of the smooth disorder on the dependence of $R$ on $B$.

cond-mat.dis-nn↗

Spin dynamics in the regime of hopping conductivity

We consider spin dynamics in the impurity band of a semiconductor with spin-split spectrum. Due to the splitting, phonon-assisted hops from one impurity to another are accompanied by rotation of the electron spin, which leads to spin relaxation. The system is strongly inhomogeneous because of exponential variation of hopping times. However, at very small couplings an electron diffuses over a distance exceeding the characteristic scale of the inhomogeneity during the time of spin relaxation, so one can introduce an averaged spin relaxation rate. At larger values of coupling the system is effectively divided into two subsystems: the one where relaxation is very fast and another one where relaxation is rather slow. In this case, spin decays due to escape of the electrons from one subsystem to another. As a result, the spin dynamics is non-exponential and hardly depends on spin-orbit coupling.

cond-mat.dis-nn↗

Classical memory effects on spin dynamics in two-dimensional systems

We discuss classical dynamics of electron spin in two-dimensional semiconductors with a spin-split spectrum. We focus on a special case, when spin-orbit induced random magnetic field is directed along a fixed axis. This case is realized in III-V-based quantum wells grown in [110] direction and also in [100]-grown quantum wells with equal strength of Dresselhaus and Bychkov-Rashba spin-orbit couplings. We show that in such wells the long-time spin dynamics is determined by non-Markovian memory effects. Due to these effects the non-exponential tail $1/t^2$ appears in the spin polarization.

cond-mat.dis-nn↗