Searcharxiv⌕ Search

arXiv subjects

Vladimir I Fal'ko

Publications and source records attributed to Vladimir I Fal'ko.

3 recordsLinked to original sources

Superexchange and spin-orbit coupling in monolayer and bilayer chromium trihalides

We build a microscopic model to study the intra- and inter-layer superexchange due to electrons hopping in chromium trihalides ($\mathrm{CrX}_3$, X= Cl, Br, and I). In evaluating the superexchange, we identify the relevant intermediate excitations in the hopping. In our study, we find that the intermediate hole-pairs excitations in the $p$-orbitals on X ion play a crucial role in mediating various types of exchange interactions. In particular, the inter-layer antiferromagnetic exchange may be realized by the hole-pair-mediated superexchange. Interestingly, we also find that these virtual hopping processes compete with each other leading to weak intra-layer ferromagnetic exchange. In addition, we also study the spin-orbit coupling effects on the superexchange and investigate the Dzyaloshinskii-Moriya interaction. Finally, we extract the microscopic model parameters from density functional theory for analyzing the exchange interactions in a monolayer $\mathrm{CrI}_3$.

cond-mat.str-el↗

Semimetallic features in quantum transport through a gate-defined point contact in bilayer graphene

We demonstrate that, at the onset of conduction, an electrostatically defined quantum wire in bilayer graphene (BLG) with an interlayer asymmetry gap may act as a 1D semimetal, due to the multiple minivalley dispersion of its lowest subband. Formation of a non-monotonic subband coincides with a near-degeneracy between the bottom edges of the lowest two subbands in the wire spectrum, suggesting an $8e^2/h$ step at the conduction threshold, and the semimetallic behaviour of the lowest subband in the wire would be manifest as resonance transmission peaks on an $8e^2/h$ conductance plateau.

cond-mat.mes-hall↗

Twist-controlled Resonant Tunnelling between Monolayer and Bilayer Graphene

We investigate the current-voltage characteristics of a field-effect tunnelling transistor comprised of both monolayer and bilayer graphene with well-aligned crystallographic axes, separated by three layers of hexagonal boron nitride. Using a self-consistent description of the device's electrostatic configuration we relate the current to three distinct tunable voltages across the system and hence produce a two-dimensional map of the I-V characteristics in the low energy regime. We show that the use of gates either side of the heterostructure offers a fine degree of control over the device's rich array of characteristics, as does varying the twist between the graphene electrodes.

cond-mat.mes-hall↗