arXiv subjects

W. -Z. Wei

Publications and source records attributed to W. -Z. Wei.

16 recordsLinked to original sources

arXiv2021

Development of Planar P-type Point Contact Germanium Detectors for Low-Mass Dark Matter Searches

The detection of low-energy deposition in the range of sub-eV through ionization using germanium (Ge) with a bandgap of $\sim$0.7 eV requires internal amplification of charge signal. This can be achieved through high electric field which accelerates charge carriers to generate more charge carriers. The minimum electric field required to generate internal charge amplification is derived for different temperatures. A point contact Ge detector provides extremely high electric field in proximity to the point contact. We show the development of a planar point contact detector and its performance. The field distribution is calculated for this planar point contact detector. We demonstrate the required electric field can be achieved with a point contact detector.

physics.ins-det↗

arXiv2021

Implication of the Temperature-Dependent Charge Barrier Height of Amorphous Germanium Contact Detector in Searching for Rare Event Physics

The exploration of germanium (Ge) detectors with amorphous Ge (a-Ge) contacts has drawn attention to the searches for rare-event physics such as dark matter and neutrinoless double-beta decay. The charge barrier height (CBH) of the a-Ge contacts deposited on the detector surface is crucial to suppress the leakage current of the detector in order to achieve la ow-energy detection threshold and high-energy resolution. The temperature-dependent CBH of a-Ge contacts for three Ge detectors is analyzed to study the bulk leakage current (BLC) characteristics. The detectors were fabricated at the University of South Dakota using homegrown crystals. The CBH is determined from the BLC when the detectors are operated in the reverse bias mode with a guard-ring structure, which separates the BLC from the surface leakage current (SLC). The results show that CBH is temperature dependent. The direct relation of the CBH variation to temperature is related to the barrier inhomogeneities created on the interface of a-Ge and crystalline Ge. The inhomogeneities that occur at the interface were analyzed using the Gaussian distribution model for three detectors. The CBH of a-Ge contact is projected to zero temperature. The implication of the CBH at zero temperature is discussed for Ge detectors with a-Ge contacts in searching for rare-event physics.

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arXiv2020

Investigation of the Electrical Conduction Mechanisms in P-type Amorphous Germanium (a-Ge) Used as a-Ge Contacts for Ge Detectors

Electrical conduction mechanisms in the disordered material system is experimentally studied for p-type amorphous germanium (a-Ge) used for high-purity Ge detector contacts. The localization length and the hopping parameters in a-Ge are determined using the surface leakage current measured from three high-purity planar Ge detectors. The temperature-dependent hopping distance and hopping energy are obtained for a-Ge fabricated as the electrical contact materials for high-purity Ge planar detectors. As a result, we find that the hopping energy in a-Ge increases as temperature increases while the hopping distance in a-Ge decreases as temperature increases. The localization length of a-Ge is on the order of $2.13^{-0.05}_{+0.07} A^\circ$ to $5.07^{-0.83}_{+2.58}A^\circ$, depending on the density of states near the Fermi energy level within bandgap. Using these parameters, we predict that the surface leakage current from a Ge detector with a-Ge contacts can be much smaller than one yocto amp (yA) at helium temperature, suitable for rare-event physics searches.

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arXiv2020

Characterization of High-Purity Germanium Detectors with Amorphous Germanium Contacts in Cryogenic Liquids

For the first time, planar high-purity germanium detectors with thin amorphous germanium contacts were successfully operated directly in liquid nitrogen and liquid argon in a cryostat at the Max-Planck-Institut fuer Physics in Munich. The detectors were fabricated at the Lawrence Berkeley National Laboratory and the University of South Dakota, using crystals grown at the University of South Dakota. They survived long-distance transportation and multiple thermal cycles in both cryogenic liquids and showed reasonable leakage currents and spectroscopic performance. Also discussed are the pros and cons of using thin amorphous semiconductor materials as an alternative contact technology in large-scale germanium experiments searching for physics beyond the Standard Model.

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arXiv2020

Characterization of High-Purity Germanium (Ge) Crystals for Developing Novel Ge Detectors

High-purity germanium (HPGe) crystals are required to be well-characterized before being fabricated into Ge detectors. The characterization of HPGe crystals is often performed with the Hall Effect system, which measures the carrier concentration, the Hall mobility, and the electrical resistivity. The reported values have a strong dependence on the size of the ohmic contacts and the geometry of the samples used in conducting the Hall Effect measurements. We conduct a systematic study using four samples cut from the same location in a HPGe crystal made into different sized ohmic contacts or different geometries to study the variation of the measured parameters from the Hall Effect system. The results are compared to the C-V measurements provided by the Ge detector made from the same crystal. We report the systematic errors involved with the Hall Effect system and find a reliable technique that minimizes the systematic error to be only a few percent from the Hall Effect measurements.

physics.ins-det↗

arXiv2020

Impact of Charge Trapping on the Energy Resolution of Ge Detectors for Rare-Event Physics Searches

Charge trapping degrades the energy resolution of germanium (Ge) detectors, which require to have increased experimental sensitivity in searching for dark matter and neutrinoless double-beta decay. We investigate the charge trapping processes utilizing nine planar detectors fabricated from USD-grown crystals with well-known net impurity levels. The charge collection efficiency as a function of charge trapping length is derived from the Shockley-Ramo theorem. Furthermore, we develop a model that correlates the energy resolution with the charge collection efficiency. This model is then applied to the experimental data. As a result, charge collection efficiency and charge trapping length are determined accordingly. Utilizing the Lax model (further developed by CDMS collaborators), the absolute impurity levels are determined for nine detectors. The knowledge of these parameters when combined with other traits such as the Fano factor serve as a reliable indicator of the intrinsic nature of charge trapping within the crystals. We demonstrate that electron trapping is more severe than hole trapping in a p-type detector and the charge collection efficiency depends on the absolute impurity level of the Ge crystal when an adequate bias voltage is applied to the detector. Negligible charge trapping is found when the absolute impurity level is less than 1.0$\times$10$^{11}/$cm$^{3}$ for collecting electrons and 2.0$\times$10$^{11}/$cm$^{3}$ for collecting holes.

physics.ins-det↗

arXiv2020

The Impact of the Charge Barrier Height on Germanium (Ge) Detectors with Amorphous-Ge Contacts for Light Dark Matter Searches

Germanium (Ge) detectors with ability of measuring a single electron-hole (e-h) pair are needed in searching for light dark matter (LDM) down to the MeV scale. We investigate the feasibility of Ge detectors with amorphous-Ge (a-Ge) contacts to achieve the sensitivity of measuring a single e-h pair, which requires extremely low leakage current. Three Ge detectors with a-Ge contacts are used to study the charge barrier height for blocking electrons and holes. Using the measured bulk leakage current and the D$\ddot{o}$hler-Brodsky model, we obtain the values for charge barrier height and the density of localized energy states near the Fermi energy level for the top and bottom contacts, respectively. We predict that the bulk leakage current is extremely small and can be neglected at helium temperature ($\sim$4 K). Thus, Ge detectors with a-Ge contacts possess the potential to measure a single e-h pair for detecting LDM particles.

physics.ins-det↗

arXiv2019

Fabrication and Characterization of High-Purity Germanium Detectors with Amorphous Germanium Contacts

Large, high-purity, germanium (HPGe) detectors are needed for neutrinoless double-beta decay and dark matter experiments. Currently, large (> 4 inches in diameter) HPGe crystals can be grown at the University of South Dakota (USD). We verify that the quality of the grown crystals is sufficient for use in large detectors by fabricating and characterizing smaller HPGe detectors made from those crystals. We report the results from eight detectors fabricated over six months using crystals grown at USD. Amorphous germanium (a-Ge) contacts are used for blocking both electrons and holes. Two types of geometry were used to fabricate HPGe detectors. As a result, the fabrication process of small planar detectors at USD is discussed in great detail. The impact of the procedure and geometry on the detector performance was analyzed for eight detectors. We characterized the detectors by measuring the leakage current, capacitance, and energy resolution at 662 keV with a Cs-137 source. Four detectors show good performance, which indicates that crystals grown at USD are suitable for making HPGe detectors.

physics.ins-det↗

arXiv2018

Investigation of Amorphous Germanium Contact Properties with Planar Detectors Made from Home-Grown Germanium Crystals

The characterization of detectors fabricated from home-grown crystals is the most direct way to study crystal properties. We fabricated planar detectors from high-purity germanium (HPGe) crystals grown at the University of South Dakota (USD). In the fabrication process, a HPGe crystal slice cut from a USD-grown crystal was coated with a high resistivity thin film of amorphous Ge (a-Ge) followed by depositing a thin layer of aluminum on top of the a-Ge film to define the physical area of the contacts. We investigated the detector performance including the $I$-$V$ characteristics, $C$-$V$ characteristics and spectroscopy measurements for a few detectors. The results document the good quality of the USD-grown crystals and electrical contacts.

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arXiv2017

Cosmogenic Activation of Germanium Used for Tonne-Scale Rare Event Search Experiments

We report a comprehensive study of cosmogenic activation of germanium used for tonne-scale rare event search experiments. The germanium exposure to cosmic rays on the Earth's surface are simulated with and without a shielding container using Geant4 for a given cosmic muon, neutron, and proton energy spectrum. The production rates of various radioactive isotopes are obtained for different sources separately. We find that fast neutron induced interactions dominate the production rate of cosmogenic activation. Geant4-based simulation results are compared with the calculation of ACTIVIA and the available experimental data. A reasonable agreement between Geant4 simulations and several experimental data sets is presented. We predict that cosmogenic activation of germanium can set limits to the sensitivity of the next generation of tonne-scale experiments.

nucl-ex↗

arXiv2017

Direct Detection of MeV-Scale Dark Matter Utilizing Germanium Internal Amplification for the Charge Created by the Ionization of Impurities

Light, MeV-scale dark matter (DM) is an exciting DM candidate that is undetectable by current experiments. A germanium (Ge) detector utilizing internal charge amplification for the charge carriers created by the ionization of impurities is a promising new technology with experimental sensitivity for detecting MeV-scale DM. We analyze the physics mechanisms of the signal formation, charge creation, charge internal amplification, and the projected sensitivity for directly detecting MeV-scale DM particles. We present a design for a novel Ge detector at helium temperature ($\sim$4 K) enabling ionization of impurities from DM impacts. With large localized E-fields, the ionized excitations can be accelerated to kinetic energies larger than the Ge bandgap at which point they can create additional electron-hole pairs, producing intrinsic amplification to achieve an ultra-low energy threshold of $\sim$0.1 eV for detecting low-mass DM particles in the MeV scale. Correspondingly, such a Ge detector with 1 kg-year exposure will have high sensitivity to a DM-nucleon cross section of $\sim$5$\times$10$^{-45}$ cm$^{2}$ at a DM mass of $\sim$10 MeV/c$^{2}$ and a DM-electron cross section of $\sim$5$\times$10$^{-46}$cm$^{2}$ at a DM mass of $\sim$1 MeV/c$^2$.

physics.ins-det↗

arXiv2017

Impact of Low-Energy Response to Nuclear Recoils in Dark Matter Detectors

We report an absolute energy response function to electronic and nuclear recoils for germanium and liquid xenon detectors. As a result, we show that the detection energy threshold of nuclear recoils for a dual-phase xenon detector can be a few keV for a given number of detectable photoelectrons. We evaluate the average energy expended per electron-hole pair to be $\sim$3.32 eV, which sets a detection energy threshold of $\sim$2.15 keV for a germanium detector at 50 mini-Kelvin at 69 volts with a primary phonon frequency of 1 THz. The Fano factors of nuclear and electronic recoils that constrain the capability for discriminating nuclear recoils below 2-3 keV recoil energy for both technologies are different.

physics.ins-det↗

arXiv2016

Average Energy Expended Per e-h Pair and Energy Scale Function for Germanium-Based Dark Matter Experiments

We report a new result of the temperature-dependent average energy expended per electron-hole (e-h) pair, $\varepsilon$, for germanium detectors. Applying energy partition mechanism in ionization for a given energy deposition, the Fano factor and the value of $\varepsilon$ can be determined separately. Subsequently, we illustrate the variation of $\varepsilon$ as a function of temperature. The impact of $\varepsilon$ on the energy threshold and energy scale for germanium detectors at a given temperature is evaluated. We demonstrate an absolute energy scale function of low-energy recoils for germanium detectors in the direct detection of dark matter particles.

physics.ins-det↗

arXiv2016

Discrimination of nuclear and electronic recoil events using plasma effect in germanium detectors

We report a new method of using the plasma time difference, which results from the plasma effect, between the nuclear and electronic recoil events in high-purity germanium detectors to distinguish these two types of events in the search for rare physics processes. The physics mechanism of the plasma effect is discussed in detail. A numerical model is developed to calculate the plasma time for nuclear and electronic recoils at various energies in germanium detectors. It can be shown that under certain conditions the plasma time difference is large enough to be observable. The experimental aspects in realizing such a discrimination in germanium detectors is discussed.

physics.ins-det↗

arXiv2013

Measuring Double-Electron Capture with Liquid Xenon Experiments

We investigate the possibilities of observing the decay mode for $^{124}$Xe in which two electrons are captured, two neutrinos are emitted, and the final daughter nucleus is in its ground state, using dark matter experiments with liquid xenon. The first upper limit of the decay half-life is calculated to be 1.66$\times10^{21}$ years at a 90% confidence level (C.L.) obtained with the published background data from the XENON100 experiment. Employing a known background model from the Large Underground Xenon (LUX) experiment, we predict that the detection of double-electron capture of $^{124}$Xe to the ground state of $^{124}$Te with LUX will have approximately 115 events, assuming a half-life of 2.9 $\times$ 10$^{21}$ years. We conclude that measuring $^{124}$Xe 2$ν$ double-electron capture to the ground state of $^{124}$Te can be performed more precisely with the proposed LUX-Zeplin (LZ) experiment.

nucl-ex↗

arXiv2013

Ionization Efficiency Study for Low Energy Nuclear Recoils in Germanium

We used the internal conversion ($E_0$ transition) of germanium-72 to indirectly measure the low energy nuclear recoils of germanium. Together with a reliable Monte Carlo package, in which we implement the internal conversion process, the data was compared to the Lindhard ($k$=0.159) and Barker-Mei models. A shape analysis indicates that both models agree well with data in the region of interest within 4%. The most probable value (MPV) of the nuclear recoils obtained from the shape analysis is 17.5 keV with an average path-length of 0.014 $μ$m.

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