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W. Wegscheider

Publications and source records attributed to W. Wegscheider.

At least 127 records · Page 7Linked to original sources

Nonlinear growth with the microwave intensity in radiation-induced magnetoresistance oscillations

We report the observation of inverse-magnetic-field-periodic, radiation-induced magnetoresistance oscillations in GaAs/AlGaAs heterostructures prepared in W. Wegscheider's group, compare their characteristics with similar oscillations in V. Umansky's material, and describe the lineshape variation vs. the radiation power, $P$, in the two systems. We find that the radiation-induced oscillatory $ΔR_{xx}$, in both materials, can be described by $ΔR_{xx} = -A exp(-λ/B)sin(2 πF/B)$, where $A$ is the amplitude, $λ$ is the damping parameter, and $F$ is the oscillation frequency. Both $λ$ and $F$ turn out to be insensitive to $P$. On the other hand, $A$ grows nonlinearly with $P$.

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Acoustic phonon-based interaction between coplanar quantum circuits in magnetic field

We explore the acoustic phonon-based interaction between two neighboring coplanar circuits containing semiconductor quantum point contacts in a perpendicular magnetic field B. In a drag-type experiment, a current flowing in one of the circuits (unbiased) is measured in response to an external current in the other. In moderate B the sign of the induced current is determined solely by the polarity of B. This indicates that the spatial regions where the phonon emission/reabsorption is efficient are controlled by magnetic field. The results are interpreted in terms of non-equilibrium transport via skipping orbits in two-dimensional electron system.

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Radio frequency pulsed-gate charge spectroscopy on coupled quantum dots

Time-resolved electron dynamics in coupled quantum dots is directly observed by a pulsed-gate technique. While individual gate voltages are modulated with periodic pulse trains, average charge occupations are measured with a nearby quantum point contact as detector. A key component of our setup is a sample holder optimized for broadband radio frequency applications. Our setup can detect displacements of single electrons on time scales well below a nanosecond. Tunneling rates through individual barriers and relaxation times are obtained by using a rate equation model. We demonstrate the full characterization of a tunable double quantum dot using this technique, which could also be used for coherent charge qubit control.

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Coupling molecular spin states by photon-assisted tunneling

Artificial molecules containing just one or two electrons provide a powerful platform for studies of orbital and spin quantum dynamics in nanoscale devices. A well-known example of these dynamics is tunneling of electrons between two coupled quantum dots triggered by microwave irradiation. So far, these tunneling processes have been treated as electric dipole-allowed spin-conserving events. Here we report that microwaves can also excite tunneling transitions between states with different spin. In this work, the dominant mechanism responsible for violation of spin conservation is the spin-orbit interaction. These transitions make it possible to perform detailed microwave spectroscopy of the molecular spin states of an artificial hydrogen molecule and open up the possibility of realizing full quantum control of a two spin system via microwave excitation.

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Electron-avalanche amplifier based on the electronic Venturi effect

Scattering of otherwise ballistic electrons far from equilibrium is investigated in a cold two-dimensional electron system. The interaction between excited electrons and the degenerate Fermi liquid induces a positive charge in a nanoscale region which would be negatively charged for diffusive transport at local thermal equilibrium. In a three-terminal device we observe avalanche amplification of electrical current, resulting in a situation comparable to the Venturi effect in hydrodynamics. Numerical calculations using a random phase approximation are in agreement with our data and suggest Coulomb interaction as the dominant scattering mechanism.

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Spin-orbit anisotropy measured using ballistic spin resonance

Spin relaxation can be greatly enhanced in narrow channels of two-dimensional electron gas due to ballistic spin resonance, which is mediated by spin-orbit interaction for trajectories that bounce rapidly between channel walls. The channel orientation determines which momenta affect the relaxation process, so comparing relaxation for two orientations provides a direct determination of spin-orbit anisotropy. Electrical measurements of pure spin currents are shown to reveal an order of magnitude stronger relaxation for channels fabricated along the [110] crystal axis in a GaAs electron gas compared to [-110] channels, believed to result from interference between structural and bulk inversion asymmetries.

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Spin polarized electric currents in semiconductor heterostructures induced by microwave radiation

We report on microwave (mw) radiation induced electric currents in (Cd,Mn)Te/(Cd,Mg)Te and InAs/(In,Ga)As quantum wells subjected to an external in-plane magnetic field. The current generation is attributed to the spin-dependent energy relaxation of electrons heated by mw radiation. The relaxation produces equal and oppositely directed electron flows in the spin-up and spin-down subbands yielding a pure spin current. The Zeeman splitting of the subbands in the magnetic field leads to the conversion of the spin flow into a spin-polarized electric current.

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Zero-bias Anomaly of Quantum Point Contacts in the Low-Conductance Limit

Most quantum point contacts (QPCs) fabricated in high-mobility 2D electron gases show a zero-bias conductance peak near pinchoff, but the origin of this peak remains a mystery. Previous experiments have primarily focused on the zero-bias peak at moderate conductance, in the range (1-2)e^2/h. Here, measurements are presented of zero-bias peaks that persist down to 10^{-4}e^2/h. Magnetic field and temperature dependencies of the zero-bias peak in the low-conductance limit are qualitatively different from the analogous phenomenology at higher conductance, with implications for existing theoretical models of transport in low-density QPCs.

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Local investigation of the energy gap within the incompressible strip in the quantum Hall regime

We experimentally study the energy gap within the incompressible strip at local filling factor $ν_c=1$ at the quantum Hall edge for samples of very different mobilities. The obtained results indicate strong enhancement of the energy gap in comparison to the single-particle Zeeman splitting. We identify the measured gap as a mobility gap, so a pronounced experimental in-plane magnetic field dependence can both be attributed to the spin effects as well as to the change in the energy levels broadening.

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Nuclear Polarization in Quantum Point Contacts in an In-Plane Magnetic Field

Nuclear spin polarization is typically generated in GaAs quantum point contacts (QPCs) when an out-of-plane magnetic field gives rise to spin-polarized quantum Hall edge states, and a voltage bias drives transitions between the edge states via electron-nuclear flip-flop scattering. Here, we report a similar effect for QPCs in an in-plane magnetic field, where currents are spin polarized but edge states are not formed. The nuclear polarization gives rise to hysteresis in the d.c. transport characteristics, with relaxation timescales around 100 seconds. The dependence of anomalous QPC conductance features on nuclear polarization provides a useful test of their spin-sensitivity.

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Measurement of spin-dependent conductivities in a two-dimensional electron gas

Spin accumulation is generated by injecting an unpolarized charge current into a channel of GaAs two-dimensional electron gas subject to an in-plane magnetic field, then measured in a non-local geometry. Unlike previous measurements that have used spin-polarized nanostructures, here the spin accumulation arises simply from the difference in bulk conductivities for spin-up and spin-down carriers. Comparison to a diffusive model that includes spin subband splitting in magnetic field suggests a significantly enhanced electron spin susceptibility in the 2D electron gas.

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Spatially resolved ultrafast transport current in GaAs photoswitches

We apply a pump- and probe-scheme to coplanar stripline circuits to investigate the photocurrent response of GaAs photoswitches in time and space. We find a displacement current pulse, as has been reported earlier. A time-delayed second pulse is interpreted by a transport current. A time-of-flight analysis allows us to determine the velocity of the photogenerated charge carriers in the transport current. It exceeds the Fermi and the single-particle quantum velocities. This suggests that the excitation of a collective electron-hole plasma and not single charge-carriers dominates the ultrafast transport current in GaAs photoswitches.

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Phonon-mediated vs. Coulombic Back-Action in Quantum Dot circuits

Quantum point contacts (QPCs) are commonly employed to capacitively detect the charge state of coupled quantum dots (QD). An indirect back-action of a biased QPC onto a double QD laterally defined in a GaAs/AlGaAs heterostructure is observed. Energy is emitted by non-equilibrium charge carriers in the leads of the biased QPC. Part of this energy is absorbed by the double QD where it causes charge fluctuations that can be observed under certain conditions in its stability diagram. By investigating the spectrum of the absorbed energy, we identify both acoustic phonons and Coulomb interaction being involved in the back-action, depending on the geometry and coupling constants.

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Gating of high-mobility two-dimensional electron gases in GaAs/AlGaAs heterostructures

We investigate high-mobility two-dimensional electron gases in AlGaAs heterostructures by employing Schottky-gate-dependent measurements of the samples' electron density and mobility. Surprisingly, we find that two different sample configurations can be set in situ with mobilities diering by a factor of more than two in a wide range of densities. This observation is discussed in view of charge redistributions between the doping layers and is relevant for the design of future gateable high-mobility electron gases.

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Engineering ultralong spin coherence in two-dimensional hole systems at low temperatures

For the realisation of scalable solid-state quantum-bit systems, spins in semiconductor quantum dots are promising candidates. A key requirement for quantum logic operations is a sufficiently long coherence time of the spin system. Recently, hole spins in III-V-based quantum dots were discussed as alternatives to electron spins, since the hole spin, in contrast to the electron spin, is not affected by contact hyperfine interaction with the nuclear spins. Here, we report a breakthrough in the spin coherence times of hole ensembles, confined in so called natural quantum dots, in narrow GaAs/AlGaAs quantum wells at temperatures below 500 mK. Consistently, time-resolved Faraday rotation and resonant spin amplification techniques deliver hole-spin coherence times, which approach in the low magnetic field limit values above 70 ns. The optical initialisation of the hole spin polarisation, as well as the interconnected electron and hole spin dynamics in our samples are well reproduced using a rate equation model.

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Measurement of the Transmission Phase through a Quantum Dot Embedded in One Arm of an Electronic Mach-Zehnder Interferometer

We investigate an electronic Mach-Zehnder interferometer with high visibility in the quantum Hall regime. The superposition of the electrostatic potentials from a quantum point contact (QPC) and the residual disorder potential from doping impurities frequently results in the formation of inadvertent quantum dots (QD) in one arm of the interferometer. This gives rise to resonances in the QPC transmission characteristics. While crossing the QD resonance in energy, the interferometer gains a phase shift of $π$ in the interference pattern.

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Asymmetric non-linear response of the IQHE

An asymmetric break-down of the integer quantized Hall effect is investigated. This rectification effect is observed as a function of the current value and its direction in conjunction with an asymmetric lateral confinement potential defining the Hall-bar. Our electrostatic definition of the Hall-bar via Schottky-gates allows a systematic control of the steepness of the confinement potential at the edges of the Hall-bar. A softer edge (flatter confinement potential) results in more stable Hall-plateaus, i.e. a break-down at a larger current density. For one soft and one hard edge the break-down current depends on the current direction, resembling rectification. This non-linear magneto-transport effect confirms the predictions of an emerging screening theory of the IQHE.

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Dominant parameters for the critical tunneling current in bilayer exciton condensates

We will discuss the relevant conditions to observe a critical tunneling current [New J. Phys. 10, 045018 (2008)] in electron double-layer systems at a total filling factor of 1 and find they are related to the effective layer separation and the temperature. Our studies suggest that the intensity of the critical tunneling behavior is also directly linked to the area of the sample.

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