arXiv subjects

Wang Yao

Publications and source records attributed to Wang Yao.

At least 127 records · Page 7Linked to original sources

arXiv2020

Valley Phonons and Exciton Complexes in a Monolayer Semiconductor

The coupling between spin, charge, and lattice degrees of freedom plays an important role in a wide range of fundamental phenomena. Monolayer semiconducting transitional metal dichalcogenides have emerged as an outstanding platform for studying these coupling effects because they possess unique spin-valley locking physics for hosting rich excitonic species and the reduced screening for strong Coulomb interactions. Here, we report the observation of multiple valley phonons, phonons with momentum vectors pointing to the corners of the hexagonal Brillouin zone, and the resulting exciton complexes in the monolayer semiconductor WSe2. From Lande g-factor and polarization analyses of photoluminescence peaks, we find that these valley phonons lead to efficient intervalley scattering of quasi particles in both exciton formation and relaxation. This leads to a series of photoluminescence peaks as valley phonon replicas of dark trions. Using identified valley phonons, we also uncovered an intervalley exciton near charge neutrality, and extract its short-range electron-hole exchange interaction to be about 10 meV. Our work not only identifies a number of previously unknown 2D excitonic species, but also shows that monolayer WSe2 is a prime candidate for studying interactions between spin, pseudospin, and zone-edge phonons.

cond-mat.mes-hall↗

arXiv2019

Valley-selective Klein tunneling through superlattice barrier in graphene

Graphene electrons feature a pair of massless Dirac cones of opposite pseudospin chirality at two valleys. Klein tunneling refers to the intriguing capability of these chiral electrons to penetrate through high and wide potential barrier. The two valleys have been treated independently in the literature, where time reversal symmetry dictates that neither the normal incidence transmission nor the angle-averaged one can have any valley polarization. Here we show that, when intervalley scattering by barrier is accounted, graphene electrons normally incident at a superlattice barrier can experience a fully valley-selective Klein tunneling, i.e. perfect transmission in one valley, and perfect reflection in the other. Intervalley backscattering creates staggered pseudospin gaps in the superlattice barrier, which, combined with the valley contrast in pseudospin chirality, determines the valley polarity of Klein tunneling. The angle averaged transmission can have a net valley polarization of 20% for a 5-period barrier, and exceed 75% for a 20-period barrier. Our finding points to an unexpected opportunity to realize valley functionalities in graphene electronics.

cond-mat.mes-hall↗

arXiv2019

Coulomb effects on topological band inversion in the moiré of WSe$_2$/BAs heterobilayer

Quantum spin Hall (QSH) insulator with large gap is highly desirable for potential spintronics application. Here we realize electrically tunable QSH insulator with large gap in van der Waals heterobilayer of monolayer transition metal dichalcogenide (TMD) and hexagonal BAs. When the type II band alignment gets inverted in an electric field, the hybridization by interlayer hopping between the spin-valley locked valence band edges in TMD and the BAs conduction band edges leads to a stacking-configuration dependent topological band inversion. In the non-interacting limit, the double spin degeneracy of BAs leaves an un-hybridized conduction band inside the gap, so the heterobilayer is a spin-valley locked metal instead of a QSH insulator. With the Coulomb interaction accounted in the double-layer geometry, the interaction with the hybridization induced electric dipole shifts this un-hybridized conduction band upwards in energy, giving rise to a sizable global QSH gap. Consequently, this heterobilayer provides a platform for engineering electrically tunable QSH insulator with sizable band gap. In the long period moiré pattern with the spatial variation of local stacking-configurations, the competition between Coulomb interaction and interlayer hopping leads to superstructures of QSH insulators and excitonic insulators.

cond-mat.mes-hall↗

arXiv2019

Magnetic Proximity Effect in a van der Waals Moiré Superlattice

We investigate the magnetic proximity effect in van der Waals heterostructure formed by a monolayer semiconductor stacked on a 2D ferromagnet, where the lattice mismatch and twisting between the layers typically lead to the formation of moiré pattern. We find that the magnetic proximity effect arising from the spin dependent interlayer coupling depends sensitively on the interlayer atomic registry. Consequently, in the moiré pattern, the spatial variation of the atomic registry leads to a lateral modulation of magnetic proximity field. Such moiré modulated magnetic proximity effect manifests as a miniband spin splitting that strongly depends on the moiré periodicity which can be mechanically tuned by a relative twisting and/or strain between the layers. We also show, because of the moiré modulation on the interlayer distance, a perpendicular electric field can be used to control the miniband spin splitting. Our results suggest potential nanodevices where the moiré modulated magnetic proximity effect can lead to unique spin controllability.

cond-mat.mtrl-sci↗

arXiv2019

Giant magnetic field from moiré induced Berry phase in homobilayer semiconductors

When quasiparticles move in condensed matters, the texture of their internal quantum structure as a function of position and momentum can give rise to Berry phases that have profound effects on materials properties. Seminal examples include the anomalous Hall and spin Hall effects from the momentum-space Berry phases in homogeneous crystals. Here we explore a conjugate form of electron Berry phase arising from the moiré pattern, the texture of atomic configurations in real space. In homobilayer transition metal dichalcogenides, we show the real-space Berry phase from moiré manifests as a periodic magnetic field up to hundreds of Tesla. This quantity tells apart moiré patterns from different origins, which can have identical potential landscape but opposite quantized magnetic flux per supercell. For low energy carriers, the homobilayer moirés realize topological flux lattices for the quantum spin Hall effect. An interlayer bias can continuously tune the spatial profile of moiré magnetic field, whereas the flux per supercell is a topological quantity that can only have a quantized jump observable at moderate bias. We also reveal the important role of the non-Abelian Berry phase in shaping the energy landscape in small moiré. Our work points to new possibilities to access ultra-high magnetic field that can be tailored in the nanoscale by electrical and mechanical controls.

cond-mat.mes-hall↗

arXiv2019

Giant and nonreciprocal second harmonic generation from layered antiferromagnetism in bilayer CrI3

Layered antiferromagnetism is the spatial arrangement of ferromagnetic layers with antiferromagnetic interlayer coupling. Recently, the van der Waals magnet, chromium triiodide (CrI3), emerged as the first layered antiferromagnetic insulator in its few-layer form, opening up ample opportunities for novel device functionalities. Here, we discovered an emergent nonreciprocal second order nonlinear optical effect in bilayer CrI3. The observed second harmonic generation (SHG) is giant: several orders of magnitude larger than known magnetization induced SHG and comparable to SHG in the best 2D nonlinear optical materials studied so far (e.g. MoS2). We showed that while the parent lattice of bilayer CrI3 is centrosymmetric and thus does not contribute to the SHG signal, the observed nonreciprocal SHG originates purely from the layered antiferromagnetic order, which breaks both spatial inversion and time reversal symmetries. Furthermore, polarization-resolved measurements revealed the underlying C2h symmetry, and thus monoclinic stacking order in CrI3 bilayers, providing crucial structural information for the microscopic origin of layered antiferromagnetism. Our results highlight SHG as a highly sensitive probe that can reveal subtle magnetic order and open novel nonlinear and nonreciprocal optical device possibilities based on 2D magnets.

cond-mat.mes-hall↗

arXiv2019

Atomically Thin CrCl3: An in-Plane Layered Antiferromagnetic Insulator

The recent discovery of magnetism in atomically thin layers of van der Waals (vdW) crystals has created new opportunities for exploring magnetic phenomena in the two-dimensional (2D) limit. In most 2D magnets studied to date the c-axis is an easy axis, so that at zero applied field the polarization of each layer is perpendicular to the plane. Here, we demonstrate that atomically thin CrCl3 is a layered antiferromagnetic insulator with an easy-plane normal to the c-axis, that is the polarization is in the plane of each layer and has no preferred direction within it. Ligand field photoluminescence at 870 nm is observed down to the monolayer limit, demonstrating its insulating properties. We investigate the in-plane magnetic order using tunneling magnetoresistance in graphene/CrCl3/graphene tunnel junctions, establishing that the interlayer coupling is antiferromagnetic down to the bilayer. From the temperature dependence of the magnetoresistance we obtain an effective magnetic phase diagram for the bilayer. Our result shows that CrCl3 should be useful for studying the physics of 2D phase transitions and for making new kinds of vdW spintronic devices.

cond-mat.mes-hall↗

arXiv2019

Nonlinear optics in the electron-hole continuum in 2D semiconductors: two-photon transition, second harmonic generation and valley current injection

We investigate two-photon transitions to the electron-hole scattering continuum in monolayer transition-metal dichalcogenides, and identify two contributions to this nonlinear optical process with opposite circularly polarized valley selection rules. In the non-interacting limit, the competition between the two contributions leads to a crossover of the selection rule with the increase of the two-photon energy. With the strong Coulomb interaction between the electron and hole, the two contributions excite electron-hole scattering states in orthogonal angular momentum channels, while the strength of the transition can be substantially enhanced by the interaction. Based on this picture of the two-photon transition, the second harmonic generation (SHG) in the electron-hole continuum is analyzed, where the Coulomb interaction is shown to greatly alter the relative strength of different cross-circular polarized SHG processes. Valley current injection by the quantum interference of one-photon and two-photon transition is also investigated in the presence of the strong Coulomb interaction, which significantly enhances the injection rate.

cond-mat.mes-hall↗

arXiv2019

Tailoring excitonic states of van der Waals bilayers through stacking configuration, band alignment and valley-spin

Excitons in monolayer semiconductors have large optical transition dipole for strong coupling with light field. Interlayer excitons in heterobilayers, with layer separation of electron and hole components, feature large electric dipole that enables strong coupling with electric field and exciton-exciton interaction, at the cost that the optical dipole is substantially quenched (by several orders of magnitude). In this letter, we demonstrate the ability to create a new class of excitons in transition metal dichalcogenide (TMD) hetero- and homo-bilayers that combines the advantages of monolayer- and interlayer-excitons, i.e. featuring both large optical dipole and large electric dipole. These excitons consist of an electron that is well confined in an individual layer, and a hole that is well extended in both layers, realized here through the carrier-species specific layer-hybridization controlled through the interplay of rotational, translational, band offset, and valley-spin degrees of freedom. We observe different species of such layer-hybridized valley excitons in different heterobilayer and homobilayer systems, which can be utilized for realizing strongly interacting excitonic/polaritonic gases, as well as optical quantum coherent controls of bidirectional interlayer carrier transfer either with upper conversion or down conversion in energy.

cond-mat.mes-hall↗

arXiv2018

Gate tuning from exciton superfluid to quantum anomalous Hall in van der Waals heterobilayer

Van der Waals heterostructures of 2D materials provide a powerful approach towards engineering various quantum phases of matters. Examples include topological matters such as quantum spin Hall (QSH) insulator, and correlated matters such as exciton superfluid. It can be of great interest to realize these vastly different quantum matters on a common platform, however, their distinct origins tend to restrict them to material systems of incompatible characters. Here we show that heterobilayers of two-dimensional valley semiconductors can be tuned through interlayer bias between an exciton superfluid (ES), a quantum anomalous Hall (QAH) insulator, and a QSH insulator. The tunability between these distinct phases results from the competition of Coulomb interaction with the interlayer quantum tunnelling that has a chiral form in valley semiconductors. Our findings point to exciting opportunities for harnessing both protected topological edge channels and bulk superfluidity in an electrically configurable platform.

cond-mat.mes-hall↗

arXiv2018

Skyrmions in the moiré of van der Waals 2D magnets

We explore the skyrmion formation and control possibilities in 2D magnets from the ubiquitous moiré pattern in vdW heterostructures. Using the example of a ferromagnetic monolayer on an antiferromagnetic substrate, we demonstrate a new origin of skyrmions in the 2D magnets, from the lateral modulation of interlayer magnetic coupling by the locally different atomic registries in moiré. The moiré skyrmions are doubly degenerate with opposite topological charge, and trapped at an ordered array of sites with the moiré periodicity that can be dramatically tuned by strain and interlayer translation. At relatively strong interlayer coupling, the ground states are skyrmion lattices, where magnetic field can switch the skyrmion vorticity and location in the moiré. At weak interlayer coupling limit, we find metastable skyrmion excitations on the ferromagnetic ground state that can be deterministically moved between the ordered moiré trapping sites by current pulses. Our results point to potential uses of moiré skyrmions both as information carriers and as drastically tunable topological background of electron transport.

cond-mat.mes-hall↗

arXiv2018

Signatures of moiré-trapped valley excitons in MoSe$_2$/WSe$_2$ heterobilayers

The creation of moiré patterns in crystalline solids is a powerful approach to manipulate their electronic properties, which are fundamentally influenced by periodic potential landscapes. In 2D materials, a moiré pattern with a superlattice potential can form by vertically stacking two layered materials with a twist and/or finite lattice constant difference. This unique approach has led to emergent electronic phenomena, including the fractal quantum Hall effect, tunable Mott insulators, and unconventional superconductivity. Furthermore, theory predicts intriguing effects on optical excitations by a moiré potential in 2D valley semiconductors, but these signatures have yet to be experimentally detected. Here, we report experimental evidence of interlayer valley excitons trapped in a moiré potential in MoSe$_2$/WSe$_2$ heterobilayers. At low temperatures, we observe photoluminescence near the free interlayer exciton energy but with over 100 times narrower linewidths. The emitter g-factors are homogeneous across the same sample and only take two values, -15.9 and 6.7, in samples with twisting angles near 60° and 0°, respectively. The g-factors match those of the free interlayer exciton, which is determined by one of two possible valley pairing configurations. At a twist angle near 20°, the emitters become two orders of magnitude dimmer, but remarkably, they possess the same g-factor as the heterobilayer near 60°. This is consistent with the Umklapp recombination of interlayer excitons near the commensurate 21.8° twist angle. The emitters exhibit strong circular polarization, which implies the preservation of three-fold rotation symmetry by the trapping potential. Together with the power and excitation energy dependence, all evidence points to their origin as interlayer excitons trapped in a smooth moiré potential with inherited valley-contrasting physics.

cond-mat.mes-hall↗

arXiv2018

Interface excitons at lateral heterojunctions in monolayer semiconductors

We study the interface exciton at lateral type II heterojunctions of monolayer transition metal dichalcogenides (TMDs), where the electron and hole prefer to stay at complementary sides of the junction. We find that the 1D interface exciton has giant binding energy in the same order as 2D excitons in pristine monolayer TMDs although the effective radius (electron-hole seperation) of interface exciton is much larger than that of 2D excitons. The binding energy, exciton radius and optical dipole strongly depends on the band offset at the junction. The inter-valley coupling induced by the electron-hole Coulomb exchange interaction and the quantum confinement effect at interface of a closed triangular shape are also investigated. Small triangles realize 0D quantum dot confinement of excitons, and we find a transition from non-degenerate ground state to degenerate ones when the size of the triangle varies. Our findings may facilitate the implementation of the optoelectronic devices based on the lateral heterojunction structures in monolayer semiconductors.

cond-mat.mes-hall↗

arXiv2018

Voltage Control of a van der Waals Spin-Filter Magnetic Tunnel Junction

Atomically thin chromium triiodide (CrI3) has recently been identified as a layered antiferromagnetic insulator, in which adjacent ferromagnetic monolayers are antiferromagnetically coupled. This unusual magnetic structure naturally comprises a series of anti-aligned spin filters which can be utilized to make spin-filter magnetic tunnel junctions with very large tunneling magnetoresistance (TMR). Here we report voltage control of TMR formed by four-layer CrI3 sandwiched by monolayer graphene contacts in a dual-gated structure. By varying the gate voltages at fixed magnetic field, the device can be switched reversibly between bistable magnetic states with the same net magnetization but drastically different resistance (by a factor of ten or more). In addition, without switching the state, the TMR can be continuously modulated between 17,000% and 57,000%, due to the combination of spin-dependent tunnel barrier with changing carrier distributions in the graphene contacts. Our work demonstrates new kinds of magnetically moderated transistor action and opens up possibilities for voltage-controlled van der Waals spintronic devices.

cond-mat.mes-hall↗

arXiv2018

Valley Manipulation by Optically Tuning the Magnetic Proximity Effect in WSe$_2$/CrI$_3$ Heterostructures

Monolayer valley semiconductors, such as tungsten diselenide (WSe$_2$), possess valley pseudospin degrees of freedom that are optically addressable but degenerate in energy. Lifting the energy degeneracy by breaking time-reversal symmetry is vital for valley manipulation. This has been realized by directly applying magnetic fields or via pseudo-magnetic fields generated by intense circularly polarized optical pulses. However, sweeping large magnetic fields is impractical for devices, and the pseudo-magnetic fields are only effective in the presence of ultrafast laser pulses. The recent rise of two-dimensional (2D) magnets unlocks new approaches to control valley physics via van der Waals heterostructure engineering. Here we demonstrate wide continuous tuning of the valley polarization and valley Zeeman splitting with small changes in the laser excitation power in heterostructures formed by monolayer WSe$_2$ and 2D magnetic chromium triiodide (CrI$_3$). The valley manipulation is realized via optical control of the CrI$_3$magnetization, which tunes the magnetic exchange field over a range of 20 T. Our results reveal a convenient new path towards optical control of valley pseudospins and van der Waals magnetic heterostructures.

cond-mat.mes-hall↗

arXiv2018

Brightened spin-triplet interlayer excitons and optical selection rules in van der Waals heterobilayers

We investigate the optical properties of spin-triplet interlayer excitons in heterobilayer transition metal dichalcogenides in comparison with the spin-singlet ones. Surprisingly, the optical transition dipole of the spin-triplet exciton is found to be in the same order of magnitude to that of the spin-singlet exciton, in sharp contrast to the monolayer excitons where the spin triplet species is considered as dark compared to the singlet. Unlike the monolayer excitons whose spin-conserved (spin-flip) transition dipole can only couple to light of in-plane (out-of-plane) polarization, such restriction is removed for the interlayer excitons due to the breaking of the out-of-plane mirror symmetry. We find that as the interlayer atomic registry changes, the optical transition dipole of interlayer exciton crosses between in-plane ones of opposite circular polarization and the out-of-plane one for both the spin-triplet and spin-singlet species. As a result, excitons of both species have non-negligible coupling into photon modes of both in-plane and out-of-plane propagations, another sharp difference from the monolayers where the exciton couples predominantly into the out-of-plane propagation channel. At given atomic registry, the spin-triplet and spin-singlet excitons have distinct valley polarization selection rules, allowing the selective optical addressing of both the valley configuration and the spin singlet/triplet configuration of interlayer excitons.

cond-mat.mes-hall↗

arXiv2018

Stacking-symmetry governed second harmonic generation in graphene trilayers

Crystal symmetry plays a central role in governing a wide range of fundamental physical phenomena. One example is the nonlinear optical second harmonic generation (SHG), which requires inversion symmetry breaking. Here we report a unique stacking-induced SHG in trilayer graphene, whose individual monolayer sheet is centrosymmetric. Depending on layer stacking sequence, we observe a strong optical SHG in Bernal (ABA) stacked non-centrosymmetric trilayer, while it vanishes in rhombohedral (ABC) stacked one which preserves inversion symmetry. This highly contrasting SHG due to the distinct stacking symmetry enables us to map out the ABA and ABC crystal domains in otherwise homogeneous graphene trilayer. The extracted second order nonlinear susceptibility of the ABA trilayer is surprisingly large, comparable to the best known 2D semiconductors enhanced by excitonic resonance. Our results reveal a novel stacking order induced nonlinear optical effect, as well as unleash the opportunity for studying intriguing physical phenomena predicted for stacking-dependent ABA and ABC graphene trilayers.

cond-mat.mes-hall↗

arXiv2018

Electrical Control of 2D Magnetism in Bilayer CrI3

The challenge of controlling magnetism using electric fields raises fundamental questions and addresses technological needs such as low-dissipation magnetic memory. The recently reported two-dimensional (2D) magnets provide a new system for studying this problem owing to their unique magnetic properties. For instance, bilayer chromium triiodide (CrI3) behaves as a layered antiferromagnet with a magnetic field-driven metamagnetic transition. Here, we demonstrate electrostatic gate control of magnetism in CrI3 bilayers, probed by magneto-optical Kerr effect (MOKE) microscopy. At fixed magnetic fields near the metamagnetic transition, we realize voltage-controlled switching between antiferromagnetic and ferromagnetic states. At zero magnetic field, we demonstrate a time-reversal pair of layered antiferromagnetic states which exhibit spin-layer locking, leading to a remarkable linear dependence of their MOKE signals on gate voltage with opposite slopes. Our results pave the way for exploring new magnetoelectric phenomena and van der Waals spintronics based on 2D materials.

cond-mat.mes-hall↗