arXiv subjects

Wang Yao

Publications and source records attributed to Wang Yao.

At least 145 records · Page 8Linked to original sources

arXiv2018

Two-Dimensional Itinerant Ising Ferromagnetism in Atomically thin Fe3GeTe2

Recent discoveries of intrinsic two-dimensional (2D) ferromagnetism in insulating/semiconducting van der Waals (vdW) crystals open up new possibilities for studying fundamental 2D magnetism and devices employing localized spins. However, a vdW material that exhibits 2D itinerant magnetism remains elusive. In fact, the synthesis of such single-crystal ferromagnetic metals with strong perpendicular anisotropy at the atomically thin limit has been a long-standing challenge. Here, we demonstrate that monolayer Fe3GeTe2 is a robust 2D itinerant ferromagnet with strong out-of-plane anisotropy. Layer-dependent studies reveal a crossover from 3D to 2D Ising ferromagnetism for thicknesses less than 4 nm (five layers), accompanying a fast drop of the Curie temperature from 207 K down to 130 K in the monolayer. For Fe3GeTe2 flakes thicker than ~15 nm, a peculiar magnetic behavior emerges within an intermediate temperature range, which we show is due to the formation of labyrinthine domain patterns. Our work introduces a novel atomically thin ferromagnetic metal that could be useful for the study of controllable 2D itinerant Ising ferromagnetism and for engineering spintronic vdW heterostructures.

cond-mat.mes-hall↗

arXiv2018

Giant Tunneling Magnetoresistance in Spin-Filter van der Waals Heterostructures

Magnetic multilayer devices that exploit magnetoresistance are the backbone of magnetic sensing and data storage technologies. Here we report novel multiple-spin-filter magnetic tunnel junctions (sf-MTJs) based on van der Waals (vdW) heterostructures in which atomically thin chromium triiodide (CrI3) acts as a spin-filter tunnel barrier sandwiched between graphene contacts. We demonstrate tunneling magnetoresistance which is drastically enhanced with increasing CrI3 layer thickness, reaching a record 19,000% for magnetic multilayer structures using four-layer sf-MTJs at low temperatures. These devices also show multiple resistance states as a function of magnetic field, suggesting the potential for multi-bit functionalities using an individual vdW sf-MTJ. Using magnetic circular dichroism measurements, we attribute these effects to the intrinsic layer-by-layer antiferromagnetic ordering of the atomically thin CrI3. Our work reveals the possibility to push magnetic information storage to the atomically thin limit, and highlights CrI3 as a superlative magnetic tunnel barrier for vdW heterostructure spintronic devices.

cond-mat.mes-hall↗

arXiv2017

Phonon-assisted oscillatory exciton dynamics in monolayer MoSe2

In monolayer semiconductor transition metal dichalcogenides, the exciton-phonon interaction is expected to strongly affect the photocarrier dynamics. Here, we report on an unusual oscillatory enhancement of the neutral exciton photoluminescence with the excitation laser frequency in monolayer MoSe2. The frequency of oscillation matches that of the M-point longitudinal acoustic phonon, LA(M). Oscillatory behavior is also observed in the steady-state emission linewidth and in timeresolved photoluminescence excitation data, which reveals variation with excitation energy in the exciton lifetime. These results clearly expose the key role played by phonons in the exciton formation and relaxation dynamics of two-dimensional van der Waals semiconductors.

cond-mat.mtrl-sci↗

arXiv2017

Moiré excitons: from programmable quantum emitter arrays to spin-orbit coupled artificial lattices

Highly uniform and ordered nanodot arrays are crucial for high performance quantum optoelectronics including new semiconductor lasers and single photon emitters, and for synthesizing artificial lattices of interacting quasiparticles towards quantum information processing and simulation of many-body physics. Van der Waals heterostructures of 2D semiconductors are naturally endowed with an ordered nanoscale landscape, i.e. the moiré pattern that laterally modulates electronic and topographic structures. Here we find these moiré effects realize superstructures of nanodot confinements for long-lived interlayer excitons, which can be either electrically or strain tuned from perfect arrays of quantum emitters to excitonic superlattices with giant spin-orbit coupling (SOC). Besides the wide range tuning of emission wavelength, the electric field can also invert the spin optical selection rule of the emitter arrays. This unprecedented control arises from the gauge structure imprinted on exciton wavefunctions by the moiré, which underlies the SOC when hopping couples nanodots into superlattices. We show that the moiré hosts complex-hopping honeycomb superlattices, where exciton bands feature a Dirac node and two Weyl nodes, connected by spin-momentum locked topological edge modes.

cond-mat.mes-hall↗

arXiv2017

Ligand-field helical luminescence in a 2D ferromagnetic insulator

Bulk chromium triiodide (CrI$_3$) has long been known as a layered van der Waals ferromagnet. However, its monolayer form was only recently isolated and confirmed to be a truly two-dimensional (2D) ferromagnet, providing a new platform for investigating light-matter interactions and magneto-optical phenomena in the atomically thin limit. Here, we report spontaneous circularly polarized photoluminescence in monolayer CrI$_3$ under linearly polarized excitation, with helicity determined by the monolayer magnetization direction. In contrast, the bilayer CrI$_3$ photoluminescence exhibits vanishing circular polarization, supporting the recently uncovered anomalous antiferromagnetic interlayer coupling in CrI$_3$ bilayers. Distinct from the Wannier-Mott excitons that dominate the optical response in well-known 2D van der Waals semiconductors, our absorption and layer-dependent photoluminescence measurements reveal the importance of ligand-field and charge-transfer transitions to the optoelectronic response of atomically thin CrI$_3$. We attribute the photoluminescence to a parity-forbidden d-d transition characteristic of Cr$^{3+}$ complexes, which displays broad linewidth due to strong vibronic coupling and thickness-independent peak energy due to its localized molecular orbital nature.

cond-mat.mes-hall↗

arXiv2017

Switchable valley functionalities of an $n-n^{-}-n$ junction in 2D semiconductors

We show that an $n-n^{-}-n$ junction in 2D semiconductors can flexibly realize two basic valleytronic functions, i.e. valley filter and valley source, with gate controlled switchability between the two. Upon carrier flux passing through the junction, the valley filter and valley source functions are enabled respectively by intra- and inter-valley scatterings, and the two functions dominate respectively at small and large band-offset between the $n$ and $n^{-}$ regions. It can be generally shown that, the valley filter effect has an angular dependent polarity and vanishes under angular integration, by the same constraint from time-reversal symmetry that leads to its absence in one-dimension. These findings are demonstrated for monolayer transition metal dichalcogenides and graphene using tight-binding calculations. We further show that junction along chiral directions can concentrate the valley pump in an angular interval largely separated from the bias direction, allowing efficient havest of valley polarization in a cross-bar device.

cond-mat.mes-hall↗

arXiv2017

Van der Waals Engineering of Ferromagnetic Semiconductor Heterostructures for Spin and Valleytronics

The integration of magnetic material with semiconductors has been fertile ground for fundamental science as well as of great practical interest toward the seamless integration of information processing and storage. Here we create van der Waals heterostructures formed by an ultrathin ferromagnetic semiconductor CrI3 and a monolayer of WSe2. We observe unprecedented control of the spin and valley pseudospin in WSe2, where we detect a large magnetic exchange field of nearly 13 T and rapid switching of the WSe2 valley splitting and polarization via flipping of the CrI3 magnetization. The WSe2 photoluminescence intensity strongly depends on the relative alignment between photo-excited spins in WSe2 and the CrI3 magnetization, due to ultrafast spin-dependent charge hopping across the heterostructure interface. The photoluminescence detection of valley pseudospin provides a simple and sensitive method to probe the intriguing domain dynamics in the ultrathin magnet, as well as the rich spin interactions within the heterostructure.

cond-mat.mes-hall↗

arXiv2017

Layer-dependent Ferromagnetism in a van der Waals Crystal down to the Monolayer Limit

Since the celebrated discovery of graphene, the family of two-dimensional (2D) materials has grown to encompass a broad range of electronic properties. Recent additions include spin-valley coupled semiconductors, Ising superconductors that can be tuned into a quantum metal, possible Mott insulators with tunable charge-density waves, and topological semi-metals with edge transport. Despite this progress, there is still no 2D crystal with intrinsic magnetism, which would be useful for many technologies such as sensing, information, and data storage. Theoretically, magnetic order is prohibited in the 2D isotropic Heisenberg model at finite temperatures by the Mermin-Wagner theorem. However, magnetic anisotropy removes this restriction and enables, for instance, the occurrence of 2D Ising ferromagnetism. Here, we use magneto-optical Kerr effect (MOKE) microscopy to demonstrate that monolayer chromium triiodide (CrI3) is an Ising ferromagnet with out-of-plane spin orientation. Its Curie temperature of 45 K is only slightly lower than the 61 K of the bulk crystal, consistent with a weak interlayer coupling. Moreover, our studies suggest a layer-dependent magnetic phase transition, showcasing the hallmark thickness-dependent physical properties typical of van der Waals crystals. Remarkably, bilayer CrI3 displays suppressed magnetization with a metamagnetic effect, while in trilayer the interlayer ferromagnetism observed in the bulk crystal is restored. Our work creates opportunities for studying magnetism by harnessing the unique features of atomically-thin materials, such as electrical control for realizing magnetoelectronics, and van der Waals engineering for novel interface phenomena.

cond-mat.mes-hall↗

arXiv2017

Interlayer coupling in commensurate and incommensurate bilayer structures of transition metal dichalcogenides

The interlayer couplings in commensurate and incommensurate bilayer structures of transition metal dichalcogenides are investigated with perturbative treatment. The interlayer coupling in \pm K valleys can be decomposed into a series of hopping terms with distinct phase factors. In H-type and R-type commensurate bilayers, the interference between the three main terms leads to a sensitive dependence of the interlayer coupling strength on the translation. The magnitudes of the main hopping terms are found to some dozen of meV by fitting to the ab initio results. The interlayer couplings in Γvalley of valence band and Q valley of conduction band are also studied. The obtained strong coupling strengths of several hundred meV can play important roles in mediating the ultrafast interlayer charge transfer in heterobilayers of transition metal dichalcogenides.

cond-mat.mes-hall↗

arXiv2017

Optical selection rules for excitonic Rydberg series in the massive Dirac cones of hexagonal 2D materials

We investigate the optical transition selection rules for excitonic Rydberg series formed in massive Dirac cones. The entanglement of the exciton envelop function with the pseudospin texture leads to anomalous selection rules for one-photon generation of excitons, where $d$-orbitals can be excited with the opposite helicity selection rule from the $s$-orbitals in a given valley. The trigonal warping effects in realistic hexagonal lattices further renders more excited states bright, where $p$-orbitals can also be accessed by one-photon excitation with the opposite valley selection rules to the $s$-orbitals. The one-photon generation of exciton in the various states and the intra-excitonic transition between these states are both dictated by the discrete in-plane rotational symmetry of the lattices, and our results show that in hexagonal 2D materials the symmetry allowed transitions are enabled when trigonal warping effects are included in the massive Dirac fermion model. In monolayer transition metal dichalcogenides where excitons can be generated by visible light and intra-excitonic transitions can be induced by infrared light, we give the strength of these optical transitions, estimated using modified hydrogen-like envelope functions combined with the optical transition matrix elements between the Bloch states calculated at various $k$ points.

cond-mat.mes-hall↗

arXiv2017

Unusual Exciton-Phonon Interactions at van der Waals Engineered Interfaces

Raman scattering is a ubiquitous phenomenon in light-matter interactions which reveals a material's electronic, structural and thermal properties. Controlling this process would enable new ways of studying and manipulating fundamental material properties. Here, we report a novel Raman scattering process at the interface between different van der Waals (vdW) materials as well as between a monolayer semiconductor and 3D crystalline substrates. We find that interfacing a WSe2 monolayer with materials such as SiO2, sapphire, and hexagonal boron nitride (hBN) enables Raman transitions with phonons which are either traditionally inactive or weak. This Raman scattering can be amplified by nearly two orders of magnitude when a foreign phonon mode is resonantly coupled to the A exciton in WSe2 directly, or via an A'1 optical phonon from WSe2. We further showed that the interfacial Raman scattering is distinct between hBN-encapsulated and hBN-sandwiched WSe2 sample geometries. This cross-platform electron-phonon coupling, as well as the sensitivity of 2D excitons to their phononic environments, will prove important in the understanding and engineering of optoelectronic devices based on vdW heterostructures.

cond-mat.mtrl-sci↗

arXiv2017

Interlayer Exciton Optoelectronics in a 2D Heterostructure p-n Junction

Semiconductor heterostructures are backbones for solid state based optoelectronic devices. Recent advances in assembly techniques for van der Waals heterostructures has enabled the band engineering of semiconductor heterojunctions for atomically thin optoelectronic devices. In two-dimensional heterostructures with type II band alignment, interlayer excitons, where Coulomb-bound electrons and holes are confined to opposite layers, have shown promising properties for novel excitonic devices, including a large binding energy, micron-scale in-plane drift-diffusion, and long population and valley polarization lifetime. Here, we demonstrate interlayer exciton optoelectronics based on electrostatically defined lateral p-n junctions in a MoSe2-WSe2 heterobilayer. Applying a forward bias enables the first observation of electroluminescence from interlayer excitons. At zero bias, the p-n junction functions as a highly sensitive photodetector, where the wavelength-dependent photocurrent measurement allows the direct observation of resonant optical excitation of the interlayer exciton. The resulting photocurrent amplitude from the interlayer exciton is about 200 times smaller compared to the resonant excitation of intralayer exciton. This implies that the interlayer exciton oscillator strength is two orders of magnitude smaller than that of the intralayer exciton due to the spatial separation of electron and hole to opposite layers. These results lay the foundation for exploiting the interlayer exciton in future 2D heterostructure optoelectronic devices.

cond-mat.mes-hall↗

arXiv2016

Directional Interlayer Spin-Valley Transfer in Two-Dimensional Heterostructures

Van der Waals heterostructures formed by two different monolayer semiconductors have emerged as a promising platform for new optoelectronic and spin/valleytronic applications. In addition to its atomically thin nature, a two-dimensional semiconductor heterostructure is distinct from its three-dimensional counterparts due to the unique coupled spin-valley physics of its constituent monolayers. Here, we report the direct observation that an optically generated spin-valley polarization in one monolayer can be transferred between layers of a two-dimensional MoSe2-WSe2 heterostructure. Using nondegenerate optical circular dichroism spectroscopy, we show that charge transfer between two monolayers conserves spin-valley polarization and is only weakly dependent on the twist angle between layers. Our work points to a new spin-valley pumping scheme in nanoscale devices, provides a fundamental understanding of spin-valley transfer across the two-dimensional interface, and shows the potential use of two-dimensional semiconductors as a spin-valley generator in 2D spin/valleytronic devices for storing and processing information.

cond-mat.mes-hall↗

arXiv2016

Many-body effects in nonlinear optical responses of 2D layered semiconductors

We performed ultrafast degenerate pump-probe spectroscopy on monolayer WSe2 near its exciton resonance. The observed differential reflectance signals exhibit signatures of strong many-body interactions including the exciton-exciton interaction and free carrier induced band gap renormalization. The exciton-exciton interaction results in a resonance blue shift which lasts for the exciton lifetime (several ps), while the band gap renormalization manifests as a resonance red shift with several tens ps lifetime. Our model based on the many-body interactions for the nonlinear optical susceptibility fits well the experimental observations. The power dependence of the spectra shows that with the increase of pump power, the exciton population increases linearly and then saturates, while the free carrier density increases superlinearly, implying that exciton Auger recombination could be the origin of these free carriers. Our model demonstrates a simple but efficient method for quantitatively analyzing the spectra, and indicates the important role of Coulomb interactions in nonlinear optical responses of such 2D materials.

cond-mat.mes-hall↗

arXiv2016

Topological mosaic in Moiré superlattices of van der Waals heterobilayers

Van der Waals (vdW) heterostructures formed by 2D atomic crystals provide a powerful approach towards designer condensed matter systems. Incommensurate heterobilayers with small twisting and/or lattice mismatch lead to the interesting concept of Moiré superlattice, where the atomic registry is locally indistinguishable from commensurate bilayers but has local-to-local variation over long range. Here we show that such Moiré superlattice can lead to periodic modulation of local topological order in vdW heterobilayers formed by two massive Dirac materials. By tuning the vdW heterojunction from normal to the inverted type-II regime via an interlayer bias, the commensurate heterobilayer can become a topological insulator (TI), depending on the interlayer hybridization controlled by the atomic registry between the vdW layers. This results in mosaic pattern of TI regions and normal insulator (NI) regions in Moiré superlattices, where topologically protected helical modes exist at the TI/NI phase boundaries. By using symmetry based k.p and tight-binding models, we predict that this topological phenomenon can be present in inverted transition metal dichalcogenides heterobilayers. Our work points to a new means of realizing programmable and electrically switchable topological superstructures from 2D arrays of TI nano-dots to 1D arrays of TI nano-stripes.

cond-mat.mtrl-sci↗

arXiv2016

Valley and spin pump by scattering at non-magnetic disorders

In solid, the crystalline structure can endow electron an internal degree of freedom known as valley, which characterizes the degenerate energy minima in momentum space. The recent success in optical pumping of valley polarization in 2D transition metal dichalcogenides (TMDs) has greatly promoted the concept of valley-based informatics and electronics. However, between the demonstrated valley polarization of transient electron-hole pair excitations and practical valleytronic operations, there exist obvious gaps to fill, among which is the valley pump of long-lived charge carriers. Here we discover that the quested valley pump of electrons or holes can be realized simply by scattering at the ubiquitous nonmagnetic disorders, not relying on any specific material property. The mechanism is rooted in the nature of valley as a momentum space index: the intervalley backscattering in general has valley contrasted rate due to the distinct momentum transfers, causing a net transfer of population from one valley to another. As examples, we numerically demonstrate the sizable valley pump effects driven by charge current in nanoribbons of monolayer TMDs, where the spin-orbit scattering by non-magnetic disorders also realizes spin pump for the spin-valley locked holes. Our finding points to an unexpected new opportunity towards valley-spintronics, turning disorders from a deleterious factor to a resource of valley and spin polarization.

cond-mat.mes-hall↗

arXiv2016

Spin-valley qubit in nanostructures of monolayer semiconductors: Optical control and hyperfine interaction

We investigate the optical control possibilities of spin-valley qubit carried by single electrons localized in nanostructures of monolayer TMDs, including small quantum dots formed by lateral heterojunction and charged impurities. The quantum controls are discussed when the confinement induces valley hybridization and when the valley hybridization is absent. We show that the bulk valley and spin optical selection rules can be inherited in different forms in the two scenarios, both of which allow the definition of spin-valley qubit with desired optical controllability. We also investigate nuclear spin induced decoherence and quantum control of electron-nuclear spin entanglement via intervalley terms of the hyperfine interaction. Optically controlled two-qubit operations in a single quantum dot are discussed.

cond-mat.mes-hall↗

arXiv2016

Expansion of a Valley-Polarized Exciton Cloud in a 2D Heterostructure

Heterostructures comprising different monolayer semiconductors provide a new system for fundamental science and device technologies, such as in the emerging field of valleytronics. Here, we realize valley-specific interlayer excitons in monolayer WSe2-MoSe2 vertical heterostructures. We create interlayer exciton spin-valley polarization by circularly polarized optical pumping and determine a valley lifetime of 40 nanoseconds. This long-lived polarization enables the visualization of the expansion of a valley-polarized exciton cloud over several microns. The spatial pattern of the polarization evolves into a ring with increasing exciton density, a manifestation of valley exciton exchange interactions. Our work lays a foundation for quantum optoelectronics and valleytronics based on interlayer excitons in van der Waals heterostructures.

cond-mat.mes-hall↗