arXiv subjects

Wang Yao

Publications and source records attributed to Wang Yao.

At least 163 records · Page 9Linked to original sources

arXiv2015

Visualizing Band Offsets and Edge States in Bilayer-Monolayer Transition Metal Dichalcogenides Lateral Heterojunction

Semiconductor heterostructures are fundamental building blocks for many important device applications. The emergence of two-dimensional semiconductors opens up a new realm for creating heterostructures. As the bandgaps of transition metal dichalcogenides thin films have sensitive layer dependence, it is natural to create lateral heterojunctions using the same materials with different thicknesses. Using scanning tunneling microscopy and spectroscopy, here we show the real space image of electronic structures across the bilayer-monolayer interface in MoSe2 and WSe2. Most bilayer-monolayer heterojunctions are found to have a zigzag-orientated interface, and the band alignment of such atomically sharp heterojunctions is of type-I with a well-defined interface mode which acts as a narrower-gap quantum wire. The ability to utilize such commonly existing thickness terrace as lateral heterojunctions is a crucial addition to the tool set for device applications based on atomically thin transition metal dichalcogenides, with the advantage of easy and flexible implementation.

cond-mat.mtrl-sci↗

arXiv2015

Electronic structures and theoretical modelling of two-dimensional group-VIB transition metal dichalcogenides

Atomically thin group-VIB transition metal dichalcogenides (TMDs) have recently emerged as a new class of two-dimensional (2D) semiconductors with extraordinary properties including the direct band gap in the visible frequency range, the pronounced spin-orbit coupling, the ultra-strong Coulomb interaction, and the rich physics associated with the valley degree of freedom. These 2D TMDs exhibit great potentials for device applications and have attracted vast interest for the exploration of new physics. 2D TMDs have complex electronic structures which underlie their physical properties. Here we review the bulk electronic structures in these new 2D materials as well as the theoretical models developed at different levels, along which we sort out the understandings on the origins of a variety of properties observed or predicted.

cond-mat.mes-hall↗

arXiv2015

Anomalous light cones and valley optical selection rules of interlayer excitons in twisted heterobilayers

We show that, because of the inevitable twist and lattice mismatch in heterobilayers of transition metal dichalcogenides, interlayer excitons have six-fold degenerate light cones anomalously located at finite velocities on the parabolic energy dispersion. The photon emissions at each light cone are elliptically polarized, with major axis locked to the direction of exciton velocity, and helicity specified by the valley indices of the electron and the hole. These finite-velocity light cones allow unprecedented possibilities to optically inject valley polarization and valley current, and the observation of both direct and inverse valley Hall effects, by exciting interlayer excitons. Our findings suggest potential excitonic circuits with valley functionalities, and unique opportunities to study exciton dynamics and condensation phenomena in semiconducting 2D heterostructures.

cond-mat.mes-hall↗

arXiv2015

Berry phase modification to the energy spectrum of excitons

By quantizing the semiclassical motion of excitons, we show that the Berry curvature can cause an energy splitting between exciton states with opposite angular momentum. This splitting is determined by the Berry curvature flux through the $\bm k$-space area spanned by the relative motion of the electron-hole pair in the exciton wave function. Using the gapped two-dimensional Dirac equation as a model, we show that this splitting can be understood as an effective spin-orbit coupling effect. In addition, there is also an energy shift caused by other "relativistic" terms. Our result reveals the limitation of the venerable hydrogenic model of excitons, and highlights the importance of the Berry curvature in the effective mass approximation.

cond-mat.mes-hall↗

arXiv2015

Valley excitons in two-dimensional semiconductors

Monolayer group-VIB transition metal dichalcogenides have recently emerged as a new class of semiconductors in the two-dimensional limit. The attractive properties include: the visible range direct band gap ideal for exploring optoelectronic applications; the intriguing physics associated with spin and valley pseudospin of carriers which implies potentials for novel electronics based on these internal degrees of freedom; the exceptionally strong Coulomb interaction due to the two-dimensional geometry and the large effective masses. The physics of excitons, the bound states of electrons and holes, has been one of the most actively studied topics on these two-dimensional semiconductors, where the excitons exhibit remarkably new features due to the strong Coulomb binding, the valley degeneracy of the band edges, and the valley dependent optical selection rules for interband transitions. Here we give a brief overview of the experimental and theoretical findings on excitons in two-dimensional transition metal dichalcogenides, with focus on the novel properties associated with their valley degrees of freedom.

cond-mat.mes-hall↗

arXiv2015

Observation of intervalley quantum interference in epitaxial monolayer WSe2

Monolayer (ML) transition metal dichalcogenides (TMDs) have been attracting great research attentions lately for their extraordinary properties, in particular the exotic spin-valley coupled electronic structures that promise future spintronic and valleytronic applications1-3. The energy bands of ML TMDs have well separated valleys that constitute effectively an extra internal degree of freedom for low energy carriers3-12. The large spin-orbit coupling in the TMDs makes the spin index locked to the valley index, which has some interesting consequences such as the magnetoelectric effects in 2H bilayers13. A direct experimental characterization of the spin-valley coupled electronic structure can be of great interests for both fundamental physics and device applications. In this work, we report the first experimental observation of the quasi-particle interference (QPI) patterns in ML WSe2 using low-temperature (LT) scanning tunneling microscopy/spectroscopy (STM/S). We observe intervalley quantum interference involving the Q-valleys in the conduction band due to spin-conserved scattering processes, while spin-flip intervalley scattering is absent. This experiment establishes unequivocally the presence of spin-valley coupling and affirms the large spin-splitting at the Q valleys. Importantly, the inefficient spin-flip intervalley scattering implies long valley and spin lifetime in ML WSe2, which represents a key figure of merit for valley-spintronic applications.

cond-mat.mtrl-sci↗

arXiv2015

Electrical Control of Second-Harmonic Generation in a WSe2 Monolayer Transistor

Nonlinear optical frequency conversion, in which optical fields interact with a nonlinear medium to produce new field frequencies, is ubiquitous in modern photonic systems. However, the nonlinear electric susceptibilities that give rise to such phenomena are often challenging to tune in a given material, and so far, dynamical control of optical nonlinearities remains confined to research labs as a spectroscopic tool. Here, we report a mechanism to electrically control second-order optical nonlinearities in monolayer WSe2, an atomically thin semiconductor. We show that the intensity of second-harmonic generation at the A-exciton resonance is tunable by over an order of magnitude at low temperature and nearly a factor of 4 at room temperature through electrostatic doping in a field-effect transistor. Such tunability arises from the strong exciton charging effects in monolayer semiconductors, which allow for exceptional control over the oscillator strengths at the exciton and trion resonances. The exciton-enhanced second-harmonic generation is counter-circularly polarized to the excitation laser, arising from the combination of the two-photon and one-photon valley selection rules that have opposite helicity in the monolayer. Our study paves the way towards a new platform for chip-scale, electrically tunable nonlinear optical devices based on two-dimensional semiconductors.

cond-mat.mes-hall↗

arXiv2015

Population pulsation resonances of excitons in monolayer MoSe2 with sub 1 μeV linewidth

Monolayer transition metal dichalcogenides, a new class of atomically thin semiconductors, possess optically coupled 2D valley excitons. The nature of exciton relaxation in these systems is currently poorly understood. Here, we investigate exciton relaxation in monolayer MoSe2 using polarization-resolved coherent nonlinear optical spectroscopy with high spectral resolution. We report strikingly narrow population pulsation resonances with two different characteristic linewidths of 1 μeV and <0.2 μeV at low-temperature. These linewidths are more than three orders of magnitude narrower than the photoluminescence and absorption linewidth, and indicate that a component of the exciton relaxation dynamics occurs on timescales longer than 1 ns. The ultra-narrow resonance (<0.2 μeV) emerges with increasing excitation intensity, and implies the existence of a long-lived state whose lifetime exceeds 6 ns.

cond-mat.mes-hall↗

arXiv2015

Ultra-Low Threshold Monolayer Semiconductor Nanocavity Lasers

Engineering the electromagnetic environment of a nanoscale light emitter by a photonic cavity can significantly enhance its spontaneous emission rate through cavity quantum electrodynamics in the Purcell regime. This effect can greatly reduce the lasing threshold of the emitter, providing the ultimate low-threshold laser system with small footprint, low power consumption and ultrafast modulation. A state-of-the-art ultra-low threshold nanolaser has been successfully developed though embedding quantum dots into photonic crystal cavity (PhCC). However, several core challenges impede the practical applications of this architecture, including the random positions and compositional fluctuations of the dots, extreme difficulty in current injection, and lack of compatibility with electronic circuits. Here, we report a new strategy to lase, where atomically thin crystalline semiconductor, i.e., a tungsten-diselenide (WSe2) monolayer, is nondestructively and deterministically introduced as a gain medium at the surface of a pre-fabricated PhCC. A new type of continuous-wave nanolaser operating in the visible regime is achieved with an optical pumping threshold as low as 27 nW at 130 K, similar to the value achieved in quantum dot PhCC lasers. The key to the lasing action lies in the monolayer nature of the gain medium, which confines direct-gap excitons to within 1 nm of the PhCC surface. The surface-gain geometry allows unprecedented accessibilities to multi-functionalize the gain, enabling electrically pumped operation. Our scheme is scalable and compatible with integrated photonics for on-chip optical communication technologies.

cond-mat.mes-hall↗

arXiv2015

Gate-tunable Topological Valley Transport in Bilayer Graphene

Valley pseudospin, the quantum degree of freedom characterizing the degenerate valleys in energy bands, is a distinct feature of two-dimensional Dirac materials. Similar to spin, the valley pseudospin is spanned by a time reversal pair of states, though the two valley pseudospin states transform to each other under spatial inversion. The breaking of inversion symmetry induces various valley-contrasted physical properties; for instance, valley-dependent topological transport is of both scientific and technological interests. Bilayer graphene (BLG) is a unique system whose intrinsic inversion symmetry can be controllably broken by a perpendicular electric field, offering a rare possibility for continuously tunable valley-topological transport. Here, we used a perpendicular gate electric field to break the inversion symmetry in BLG, and a giant nonlocal response was observed as a result of the topological transport of the valley pseudospin. We further showed that the valley transport is fully tunable by external gates, and that the nonlocal signal persists up to room temperature and over long distances. These observations challenge contemporary understanding of topological transport in a gapped system, and the robust topological transport may lead to future valleytronic applications.

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arXiv2014

Single Quantum Emitters in Monolayer Semiconductors

Single quantum emitters (SQEs) are at the heart of quantum optics and photonic quantum information technologies. To date, all demonstrated solid-state single-photon sources are confined in three-dimensional materials. Here, we report a new class of SQEs based on excitons that are spatially localized by defects in two-dimensional tungsten-diselenide monolayers. The optical emission from these SQEs shows narrow linewidths of ~0.13 meV, about two orders of magnitude smaller than that of delocalized valley excitons. Second-order correlation measurements reveal strong photon anti-bunching, unambiguously establishing the single photon nature of the emission. The SQE emission shows two non-degenerate transitions, which are cross-linearly polarized. We assign this fine structure to two excitonic eigen-modes whose degeneracy is lifted by a large ~0.71 meV coupling, likely due to the electron-hole exchange interaction in presence of anisotropy. Magneto-optical measurements also reveal an exciton g-factor of ~8.7, several times larger than that of delocalized valley excitons. In addition to their fundamental importance, establishing new SQEs in 2D quantum materials could give rise to practical advantages in quantum information processing, such as efficient photon extraction and high integratability and scalability.

cond-mat.mes-hall↗

arXiv2014

Intervalley coupling by quantum dot confinement potentials in monolayer transition metal dichalcogenides

Monolayer transition metal dichalcogenides (TMDs) offer new opportunities for realizing quantum dots (QDs) in the ultimate two-dimensional (2D) limit. Given the rich control possibilities of electron valley pseudospin discovered in the monolayers, this quantum degree of freedom can be a promising carrier of information for potential quantum spintronics exploiting single electrons in TMD QDs. An outstanding issue is to identify the degree of valley hybridization, due to the QD confinement, which may significantly change the valley physics in QDs from its form in the 2D bulk. Here we perform a systematic study of the intervalley coupling by QD confinement potentials on extended TMD monolayers. We find that the intervalley coupling in such geometry is generically weak due to the vanishing amplitude of the electron wavefunction at the QD boundary, and hence valley hybridization shall be well quenched by the much stronger spin-valley coupling in monolayer TMDs and the QDs can well inherit the valley physics of the 2D bulk. We also discover sensitive dependence of intervalley coupling strength on the central position and the lateral length scales of the confinement potentials, which may possibly allow tuning of intervalley coupling by external controls

cond-mat.mes-hall↗

arXiv2014

Magnetisms in $p$-type monolayer gallium chalcogenides (GaSe, GaS)

Magnetisms in $p$-type monolayer GaX (X=S,Se) is investigated by performing density-functional calculations. Due to the large density of states near the valence band edge, these monolayer semiconductors are ferromagnetic within a small range of hole doping. The intrinsic Ga vacancies can promote local magnetic moment while Se vacancies cannot. Magnetic coupling between vacancy-induced local moments is ferromagnetic and surprisingly long-range. The results indicate that magnetization can be induced by hole doping and can be tuned by controlled defect generation.

cond-mat.mes-hall↗

arXiv2014

Dense network of one-dimensional mid-gap metallic modes in monolayer MoSe2 and their spatial undulations

We report the observation of a dense triangular network of one-dimensional (1D) metallic modes in a continuous and uniform monolayer of MoSe2 grown by molecular-beam epitaxy. High-resolution transmission electron microscopy and scanning tunneling microscopy and spectroscopy (STM/STS) studies show these 1D modes are mid-gap states at inversion domain boundaries. STM/STS measurements further reveal intensity undulations of the metallic modes, presumably arising from the superlattice potentials due to moire pattern and the quantum confinement effect. A dense network of the metallic modes with high density of states is of great potential for heterocatalysis applications. The interconnection of such mid-gap 1D conducting channels may also imply new transport behaviors distinct from the 2D bulk.

cond-mat.mtrl-sci↗

arXiv2014

Valley Contrasting Magnetoluminescence in Monolayer MoS$_{2}$ Quantum Hall Systems

The valley dependent optical selection rules in recently discovered monolayer group-VI transition metal dichalcogenides (TMDs) make possible optical control of valley polarization, a crucial step towards valleytronic applications. However, in presence of Landaul level(LL) quantization such selection rules are taken over by selection rules between the LLs, which are not necessarily valley contrasting. Using MoS$_{2}$ as an example we show that the spatial inversion-symmetry breaking results in unusual valley dependent inter-LL selection rules, which directly locks polarization to valley. We find a systematic valley splitting for all Landau levels (LLs) in the quantum Hall regime, whose magnitude is linearly proportional to the magnetic field and in comparable with the LL spacing. Consequently, unique plateau structures are found in the optical Hall conductivity, which can be measured by the magneto-optical Faraday rotations.

cond-mat.mes-hall↗

arXiv2014

Magnetic Control of Valley Pseudospin in Monolayer WSe2

Local energy extrema of the bands in momentum space, or valleys, can endow electrons in solids with pseudo-spin in addition to real spin. In transition metal dichalcogenides this valley pseudo-spin, like real spin, is associated with a magnetic moment which underlies the valley-dependent circular dichroism that allows optical generation of valley polarization, intervalley quantum coherence, and the valley Hall effect. However, magnetic manipulation of valley pseudospin via this magnetic moment, analogous to what is possible with real spin, has not been shown before. Here we report observation of the valley Zeeman splitting and magnetic tuning of polarization and coherence of the excitonic valley pseudospin, by performing polarization-resolved magneto-photoluminescence on monolayer WSe2. Our measurements reveal both the atomic orbital and lattice contributions to the valley orbital magnetic moment; demonstrate the deviation of the band edges in the valleys from an exact massive Dirac fermion model; and reveal a striking difference between the magnetic responses of neutral and charged valley excitons which is explained by renormalization of the excitonic spectrum due to strong exchange interactions.

cond-mat.mes-hall↗

arXiv2014

Lateral heterojunctions within monolayer semiconductors

Heterojunctions between three-dimensional (3D) semiconductors with different bandgaps are the basis of modern light-emitting diodes, diode lasers, and high-speed transistors. Creating analogous heterojunctions between different two-dimensional (2D) semiconductors would enable band engineering within the 2D plane and open up new realms in materials science, device physics and engineering. Here we demonstrate that seamless high-quality in-plane heterojunctions can be grown between the 2D monolayer semiconductors MoSe2 and WSe2. The junctions, grown by lateral hetero-epitaxy using physical vapor transport, are visible in an optical microscope and show enhanced photoluminescence. Atomically resolved transmission electron microscopy reveals that their structure is an undistorted honeycomb lattice in which substitution of one transition metal by another occurs across the interface. The growth of such lateral junctions will allow new device functionalities, such as in-plane transistors and diodes, to be integrated within a single atomically thin layer.

cond-mat.mes-hall↗

arXiv2014

Nonlinear valley and spin currents from Fermi pocket anisotropy in 2D crystals

Controlled flow of spin and valley pseudospin is key to future electronics exploiting these internal degrees of freedom of carriers. Here we discover a universal possibility for generating spin and valley currents by electric bias or temperature gradient only, which arises from the anisotropy of Fermi pockets in crystalline solids. We find spin and valley currents to the second order in the electric field, as well as their thermoelectric counterparts, i.e. the nonlinear spin and valley Seebeck effects. These second-order nonlinear responses allow two unprecedented possibilities to generate pure spin and valley flows without net charge current: (i) by an AC bias; or (ii) by an arbitrary inhomogeneous temperature distribution. As examples, we predict appreciable nonlinear spin and valley currents in two-dimensional (2D) crystals including graphene, monolayer and trilayer transition metal dichalcogenides, and monolayer gallium selenide. Our finding points to a new route towards electrical and thermal generations of spin and valley currents for spintronic and valleytronic applications based on 2D quantum materials.

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