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Wanpeng Zhao

Publications and source records attributed to Wanpeng Zhao.

2 recordsLinked to original sources

UAV-UGV Cooperative Trajectory Optimization and Task Allocation for Medical Rescue Tasks in Post-Disaster Environments

In post-disaster scenarios, rapid and efficient delivery of medical resources is critical and challenging due to severe damage to infrastructure. To provide an optimized solution, we propose a cooperative trajectory optimization and task allocation framework leveraging unmanned aerial vehicles (UAVs) and unmanned ground vehicles (UGVs). This study integrates a Genetic Algorithm (GA) for efficient task allocation among multiple UAVs and UGVs, and employs an informed-RRT* (Rapidly-exploring Random Tree Star) algorithm for collision-free trajectory generation. Further optimization of task sequencing and path efficiency is conducted using Covariance Matrix Adaptation Evolution Strategy (CMA-ES). Simulation experiments conducted in a realistic post-disaster environment demonstrate that our proposed approach significantly improves the overall efficiency of medical rescue operations compared to traditional strategies. Specifically, our method reduces the total mission completion time to 26.7 minutes for a 15-task scenario, outperforming K-Means clustering and random allocation by over 73%. Furthermore, the framework achieves a substantial 15.1% reduction in total traveled distance after CMA-ES optimization. The cooperative utilization of UAVs and UGVs effectively balances their complementary advantages, highlighting the system's scalability and practicality for real-world deployment.

cs.RO

Are There High-Density Deep States in AtomicLayer-Deposited IGZO Thin Film?

It has been well recognized that there exist high-density deep states in IGZO thin films. Many of the device characteristics of IGZO transistors, such as negative bias illumination stability (NBIS),were understood to be related to these deep states. However, in this work, it is found that deep state density (NtD) of atomic-layer-deposited (ALD) IGZO transistors can be an ultra-low value (2.3*10^12 /cm^3) by the proposed NBIS-free light assisted I-V measurements so that the deep states do not affect the I-V characteristics even in subthreshold region. This work also reveals that NBIS is not related to the photoexcitation of electrons in deep states. Our results suggest that the existence of deep states and the impact of deep states on ALD IGZO transistors may need to be revisited.

cond-mat.mtrl-sci