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arXiv · 2503.12718

Are There High-Density Deep States in AtomicLayer-Deposited IGZO Thin Film?

Liankai Zheng·Lijuan Xing·Zhiyu Lin·Wanpeng Zhao·Yuyan Fan·Yulong Dong·Ziheng Wang·Siying Li·Xiuyan Li·Ying Wu·Jeffrey Xu·Mengwei Si
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Abstract

It has been well recognized that there exist high-density deep states in IGZO thin films. Many of the device characteristics of IGZO transistors, such as negative bias illumination stability (NBIS),were understood to be related to these deep states. However, in this work, it is found that deep state density (NtD) of atomic-layer-deposited (ALD) IGZO transistors can be an ultra-low value (2.3*10^12 /cm^3) by the proposed NBIS-free light assisted I-V measurements so that the deep states do not affect the I-V characteristics even in subthreshold region. This work also reveals that NBIS is not related to the photoexcitation of electrons in deep states. Our results suggest that the existence of deep states and the impact of deep states on ALD IGZO transistors may need to be revisited.

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Liankai Zheng, Lijuan Xing, Zhiyu Lin, Wanpeng Zhao, Yuyan Fan, Yulong Dong, Ziheng Wang, Siying Li, Xiuyan Li, Ying Wu, Jeffrey Xu, Mengwei Si. 2025-03-17. Are There High-Density Deep States in AtomicLayer-Deposited IGZO Thin Film?. https://arxiv.org/abs/2503.12718

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