arXiv subjects

Wanyue Peng

Publications and source records attributed to Wanyue Peng.

9 recordsLinked to original sources

arXiv2026

Unveiling the Scaling Potential of Drain Merge through Active (DMtA) in CFETs: Breaking the Super-Via Bottlenecks and Unlocking New PPA Boosters

Drain merge (DM), a super via vertically connecting the common S/D terminals of stacked n/pFETs in Complementary FETs (CFETs), blocks further parasitic optimization and cell scaling. For the first time, this work systematically investigates the state-of-the-art Drain Merge through Active (DMtA), a revolutionary technology reported recently with the DM embedded in the active region, through a comprehensive DTCO framework spanning process integration, contact-configuration-dependent (CTCD) compact modeling, standardcell design, RO evaluation and block-level PPA benchmark on a 32-bit RISC-V Ibex core. By reducing DM parasitics and enabling DM-width optimization, DMtA improves RO frequency by 11.7% over its conventional Drain Merge through field (DMtF) counterpart. Active widening and Area Borrowing, the latter first reported in [8] and exploiting spatial slack in adjacent cells to further enlarge the nanosheet width (WNS), increase the maximum Ibex-core frequency by up to 34.8%. More importantly, DMtA also enables the once GAA-exclusive Hyper-cells on CFETs by merging the active regions across adjacent cell rows, providing a further 8.7% frequency gain. A post-routing floating-output-pin-aware optimization further removes redundant S/D contacts (CTs) and reduces power by 5.3%. Finally, DMtA facilitates more area-efficient 2.5T cell scaling by preserving single-row cell compatibility, reducing post-PR core area by 25.7%.

cond-mat.mes-hall↗

arXiv2026

Compressibility and High-Pressure Structure of CaMg$_2$Bi$_2$ and YbMg$_2$Bi$_2$

Compounds with the formula $AM_2X_2$ in the CaAl$_2$Si$_2$ structure type have garnered increasing interest across various solid-state research domains, such as quantum topological and thermoelectric materials. Prior studies have identified high-pressure phase transitions in several compounds, including Mg$_3$Sb$_2$, Mg$_3$Bi$_2$, CaMn$_2$Bi$_2$, and SrAl$_2$Si$_2$. In this study, we investigate the structural behavior of CaMg$_2$Bi$_2$ and YbMg$_2$Bi$_2$ under varying pressure conditions. We synthesized crystals using the molten metal flux method and examined them through single-crystal synchrotron X-ray diffraction, employing diamond anvil cells to exert pressures up to 20 GPa. Our analysis reveals insights into the anisotropic compressibility of these materials, highlighting the more compressible and flexible octahedral $A$-Bi bonds as the primary contributors to this anisotropy. Moreover, we observed a phase transition in both CaMg$_2$Bi$_2$ and YbMg$_2$Bi$_2$ at pressures above 9.6 GPa and 8.7 GPa, respectively. The newly identified high-pressure phase exhibits a distortion of the original CaAl$_2$Si$_2$ structure with space group $C2/m$. This high-pressure structure is distinct from that of related compounds (e.g., CaMn$_2$Bi$_2$, MgMg$_2$Bi$_2$), the latter exhibiting a square pyramidal coordination for the $M$ site.

cond-mat.mtrl-sci↗

arXiv2025

Overlay-aware Variation Study of Flip FET and Benchmark with CFET

In this work, we carried out an overlay-aware variation study on Flip FET (FFET) considering the impact on RC parasitics induced by the lithography misalignment in backside processes, and benchmarked it with CFET in terms of the power-performance (PP) and variation sources. The iso-leakage frequency degrades up to 2.20% with layout misalignment of 4 nm. It's found that the Drain Merge resistance degrades significantly with misalignment increasing and is identified as the major variation source. Through careful DTCO with design rule optimization, the variation can be greatly suppressed, while the resistance fluctuation of the DM also drops substantially. Monte Carlo random experiments were also conducted, validating the variation reduction. Comparing with the CFET featuring self-aligned gate and much less overlay induced misalignment, fortunately, FFET's PP is still better except when misalignment reaches 8 nm, which is out of spec and nearly impossible. Considering the variabilities induced by the high aspect ratio processes, CFET still faces big challenges compared with FFET.

cond-mat.mes-hall↗

arXiv2025

A Tale of Two Sides of Wafer: Physical Implementation and Block-Level PPA on Flip FET with Dual-sided Signals

As the conventional scaling of logic devices comes to an end, functional wafer backside and 3D transistor stacking are consensus for next-generation logic technology, offering considerable design space extension for powers, signals or even devices on the wafer backside. The Flip FET (FFET), a novel transistor architecture combining 3D transistor stacking and fully functional wafer backside, was recently proposed. With symmetric dual-sided standard cell design, the FFET can deliver around 12.5% cell area scaling and faster but more energy-efficient libraries beyond other stacked transistor technologies such as CFET. Besides, thanks to the novel cell design with dual-sided pins, the FFET supports dual-sided signal routing, delivering better routability and larger backside design space. In this work, we demonstrated a comprehensive FFET evaluation framework considering physical implementation and block-level power-performance-area (PPA) assessment for the first time, in which key functions are dual-sided routing and dual-sided RC extraction. A 32-bit RISC-V core was used for the evaluation here. Compared to the CFET with single-sided signals, the FFET with single-sided signals achieved 23.3% post-P&R core area reduction, 25.0% higher frequency and 11.9% lower power at the same utilization, and 16.0 % higher frequency at the same core area. Meanwhile, the FFET supports dual-sided signals, which can further benefit more from flexible allocation of cell input pins on both sides. By optimizing the input pin density and BEOL routing layer number on each side, 10.6% frequency gain was realized without power degradation compared to the one with single-sided signal routing. Moreover, the routability and power efficiency of FFET barely degrades even with the routing layer number reduced from 12 to 5 on each side, validating the great space for cost-friendly design enabled by FFET.

physics.app-ph↗

arXiv2024

From Flip FET to Flip 3D Integration (F3D): Maximizing the Scaling Potential of Wafer Both Sides Beyond Conventional 3D Integration

In this work, we proposed a new 3D integration technology: the Flip 3D integration (F3D), consisting of the 3D transistor stacking, the 3D dual-sided interconnects, the 3D die-to-die stacking and the dual-sided Monolithic 3D (M3D). Based on a 32-bit FFET RISCV core, besides the scaling benefits of the Flip FET (FFET), the dual-sided signal routing shows even more routing flexibility with 6.8% area reduction and 5.9% EDP improvement. Novel concepts of Multi-Flipping processes (Double Flips and Triple Flips) were proposed to relax the thermal budget constraints in the F3D and thus support the dual-sided M3D in the F3D. The core's EDP and frequency are improved by up to 3.2% and 2.3% respectively, after BEOL optimizations based on the Triple Flips compared with unoptimized ones.

cond-mat.mes-hall↗

arXiv2023

Thermal Conductivity of BAs under Pressure

The thermal conductivity of boron arsenide (BAs) is believed to be influenced by phonon scattering selection rules due to its special phonon dispersion. Compression of BAs leads to significant changes in phonon dispersion, which allows for a test of first principles theories for how phonon dispersion affects three- and four-phonon scattering rates. This study reports the thermal conductivity of BAs from 0 to 30 GPa. Thermal conductivity vs. pressure of BAs is measured by time-domain thermoreflectance with a diamond anvil cell. In stark contrast to what is typical for nonmetallic crystals, BAs is observed to have a pressure independent thermal conductivity below 30 GPa. The thermal conductivity of nonmetallic crystals typically increases upon compression. The unusual pressure independence of thermal conductivity of BAs shows the important relationship between phonon dispersion properties and three- and four-phonon scattering rates.

cond-mat.mtrl-sci↗

arXiv2022

Thermal Model for Time-Domain Thermoreflectance Experiments in a Laser Flash Geometry

Time-domain thermoreflectance (TDTR) is a well-established pump/probe method for measuring thermal conductivity and interface conductance of multilayers. Interpreting signals in a TDTR experiment requires a thermal model.In standard front/front TDTR experiments, both pump and probe beams typically irradiate the surface of a multilayer. As a result, existing thermal models for interpreting thermoreflectance experiments assume the pump and probe beams both interact with the surface layer. Here, we present a frequency-domain solution to the heat-diffusion equation of a multilayer in response to nonhomogenous laser heating. This model allows analysis of experiments where the pump and probe beams irradiate opposite sides of a multilayer. We call such a geometry a front/back experiment to differentiate such experiments from standard TDTR experiments. As an example, we consider a 60nm amorphous Si film. We consider how signals differ in a front/front vs. front/back geometry and compare thermal model predictions to experimental data.

physics.app-ph↗

arXiv2022

Nanoscale laser flash measurements of diffuson transport in amorphous Ge and Si

The thermal properties of amorphous materials have attracted significant attention due to their technological importance in electronic devices. Additionally, the disorder-induced breakdown of the phonon gas model makes vibrational transport in amorphous materials a topic of fundamental interest. In the past few decades, theoretical concepts such as propagons, diffusons, and locons have emerged to describe different types of vibrational modes in disordered solids. But experiments can struggle to accurately determine which types of vibrational states carry the majority of the heat. In the present study, we use nanoscale laser flash measurements (front/back time-domain thermoreflectance) to investigate thermal transport mechanisms in amorphous Ge and amorphous Si thin-films. We observe a nearly linear relationship between the amorphous film's thermal resistance and the film's thickness. The slope of the film's thermal resistance vs. thickness corresponds to a thickness-independent thermal conductivity of 0.4 and 0.6 W/(m-K) for a-Ge and a-Si, respectively. This result reveals that the majority of heat currents in amorphous Si and Ge thin films prepared via RF sputtering at room temperature are carried by diffusons and/or propagons with mean free paths less than a few nanometers.

physics.app-ph↗

arXiv2018

An unlikely route to low lattice thermal conductivity: small atoms in a simple layered structure

In the design of materials with low lattice thermal conductivity, compounds with high density, low speed of sound, and complexity at either the atomic, nano- or microstructural level are preferred. The layered compound Mg$_3$Sb$_2$ defies these prevailing paradigms, exhibiting lattice thermal conductivity comparable to PbTe and Bi$_2$Te$_3$, despite its low density and simple structure. The excellent thermoelectric performance ($zT$ $\sim$ 1.5) in $n$-type Mg$_3$Sb$_2$ has thus far been attributed to its multi-valley conduction band, while its anomalous thermal properties have been largely overlooked. To explain the origin of the low lattice thermal conductivity of Mg$_3$Sb$_2$, we have used both experimental methods and ab initio phonon calculations to investigate trends in the elasticity, thermal expansion and anharmonicity of $A$Mg$_2Pn_2$ Zintl compounds with $A$ = Mg, Ca, Yb, and $Pn$ = Sb and Bi. Phonon calculations within the quasi-harmonic approximation reveal large mode Grüneisen parameters in Mg$_3$Sb$_2$ compared with isostructural compounds, in particular in transverse acoustic modes involving shearing of adjacent anionic layers. Measurements of the elastic moduli and sound velocity as a function of temperature using resonant ultrasound spectroscopy provide a window into the softening of the acoustic branches at high temperature, confirming their exceptionally high anharmonicity. We attribute the anomalous thermal behavior of Mg$_3$Sb$_2$ to the diminutive size of Mg, which may be too small for the octahedrally-coordinated site, leading to weak, unstable interlayer Mg-Sb bonding. This suggests more broadly that soft shear modes resulting from undersized cations provide a potential route to achieving low lattice thermal conductivity low-density, earth-abundant materials.

cond-mat.mtrl-sci↗