arXiv subjects

Wei Si

Publications and source records attributed to Wei Si.

21 records · Page 2Linked to original sources

arXiv2012

Modeling the underlying mechanisms for organic memory devices: Tunneling, electron emission and oxygen adsorbing

We present a combined experimental and theoretical study to get insight into both memory and negative differential resistance (NDR) effect in organic memory devices. The theoretical model we propose is simply a one-dimensional metallic island array embedding within two electrodes. We use scattering operator method to evaluate the tunneling current among the electrode and islands to establish the basic bistable I-V curves for several devices. The theoretical results match the experiments very well, and both memory and NDR effect could be understood comprehensively. The experimental correspondence, say, the experiment of changing the pressure of oxygen, is addressed as well.

cond-mat.mes-hall↗

arXiv2012

Monte Carlo simulation based on dynamic disorder model in organic semiconductors: From bandlike to hopping transport

The dynamic disorder model for charge carrier transport in organic semiconductors has been extensively studied in recent years. Although it is successful on determining the value of bandlike mobility in the organic crystalline materials, the incoherent hopping, the typical transport characteristic in organic semiconductors, cannot be described. In this work, the decoherence process is taken into account via a phenomenological parameter, say decoherence time, and the projective and Monte Carlo method is applied for this model to determine the waiting time and thus the diffusion coefficient. We find the type of transport changes from bandlike to incoherent hopping with a sufficiently short decoherence time, which indicates the essential role of decoherence time in determining the type of transport in organics. We have also discussed the spatial extent of carriers for different decoherence time, and the transition from delocalization (carrier resides in about 10 molecules) to localization is observed. Based on the experimental results of spatial extent, we estimate the decoherence time in pentacene has the order of 1ps. Furthermore, the dependence of diffusion coefficient on decoherence time is also investigated, and corresponding experiments are discussed.

cond-mat.mtrl-sci↗

arXiv2010

Spin-Boson Theory for Magnetotransport in Organic Semiconducting Materials

We present a spin-boson theory for magnetotransport in organic semiconducting materials, on the basis of a coupling between charge carriers' spin and a local bosonic environment, which is shown to be an irreducible ingredient in understanding of the anomalous organic magnetoresistance (OMR). Among those composing this environment triplet-excitons play a basic role. The incoherent hopping rate between molecules is calculated to give out the fundamental behavior of OMR. The underlying mechanism is revealed from the calculation of entanglement, represented by the von Neumann entropy, between the carrier's spin and bosons. We also obtain the dependence of OMR on the bias voltage, the spin-boson coupling, and the boson frequency. The results obtained from the theory are in good agreement with experiments.

cond-mat.mtrl-sci↗