Searcharxiv⌕ Search

arXiv subjects

Wei Yao

Publications and source records attributed to Wei Yao.

125 records · Page 7Linked to original sources

1D-Convolutional Capsule Network for Hyperspectral Image Classification

Recently, convolutional neural networks (CNNs) have achieved excellent performances in many computer vision tasks. Specifically, for hyperspectral images (HSIs) classification, CNNs often require very complex structure due to the high dimension of HSIs. The complex structure of CNNs results in prohibitive training efforts. Moreover, the common situation in HSIs classification task is the lack of labeled samples, which results in accuracy deterioration of CNNs. In this work, we develop an easy-to-implement capsule network to alleviate the aforementioned problems, i.e., 1D-convolution capsule network (1D-ConvCapsNet). Firstly, 1D-ConvCapsNet separately extracts spatial and spectral information on spatial and spectral domains, which is more lightweight than 3D-convolution due to fewer parameters. Secondly, 1D-ConvCapsNet utilizes the capsule-wise constraint window method to reduce parameter amount and computational complexity of conventional capsule network. Finally, 1D-ConvCapsNet obtains accurate predictions with respect to input samples via dynamic routing. The effectiveness of the 1D-ConvCapsNet is verified by three representative HSI datasets. Experimental results demonstrate that 1D-ConvCapsNet is superior to state-of-the-art methods in both the accuracy and training effort.

cs.CV↗

Evidence for quasi-one-dimensional charge density wave in CuTe by angle-resolved photoemission spectroscopy

We report the electronic structure of CuTe with a high charge density wave (CDW) transition temperature Tc = 335 K by angle-resolved photoemission spectroscopy (ARPES). An anisotropic charge density wave gap with a maximum value of 190 meV is observed in the quasi-one-dimensional band formed by Te px orbitals. The CDW gap can be filled by increasing temperature or electron doping through in situ potassium deposition. Combining the experimental results with calculated electron scattering susceptibility and phonon dispersion, we suggest that both Fermi surface nesting and electron-phonon coupling play important roles in the emergence of the CDW.

cond-mat.mtrl-sci↗

Quasicrystalline 30° Twisted Bilayer Graphene as an Incommensurate Superlattice with Strong Interlayer Coupling

The interlayer coupling can be used to engineer the electronic structure of van der Waals heterostructures (superlattices) to obtain properties that are not possible in a single material. So far research in heterostructures has been focused on commensurate superlattices with a long-ranged Moiré period. Incommensurate heterostructures with rotational symmetry but not translational symmetry (in analogy to quasicrystals) are not only rare in nature, but also the interlayer interaction has often been assumed to be negligible due to the lack of phase coherence. Here we report the successful growth of quasicrystalline 30° twisted bilayer graphene (30°-tBLG) which is stabilized by the Pt(111) substrate, and reveal its electronic structure. The 30°-tBLG is confirmed by low energy electron diffraction and the intervalley double-resonance Raman mode at 1383 cm$^{-1}$. Moreover, the emergence of mirrored Dirac cones inside the Brillouin zone of each graphene layer and a gap opening at the zone boundary suggest that these two graphene layers are coupled via a generalized Umklapp scattering mechanism, i.e. scattering of Dirac cone in one graphene layer by the reciprocal lattice vector of the other graphene layer. Our work highlights the important role of interlayer coupling in incommensurate quasicrystalline superlattices, thereby extending band structure engineering to incommensurate superstructures.

cond-mat.mtrl-sci↗

Widely tunable band gap in a multivalley semiconductor SnSe by potassium doping

SnSe, a group IV-VI monochalcogenide with layered crystal structure similar to black phosphorus, has recently attracted extensive interests due to its excellent thermoelectric properties and potential device applications. Experimental electronic structure of both the valence and conduction bands is critical for understanding the effects of hole versus electron doping on the thermoelectric properties, and to further reveal possible change of the band gap upon doping. Here, we report the multivalley valence bands with a large effective mass on semiconducting SnSe crystals and reveal single-valley conduction bands through electron doping to provide a complete picture of the thermoelectric physics. Moreover, by electron doping through potassium deposition, the band gap of SnSe can be widely tuned from 1.2 eV to 0.4 eV, providing new opportunities for tunable electronic and optoelectronic devices.

cond-mat.mtrl-sci↗

Artificial Generation of Big Data for Improving Image Classification: A Generative Adversarial Network Approach on SAR Data

Very High Spatial Resolution (VHSR) large-scale SAR image databases are still an unresolved issue in the Remote Sensing field. In this work, we propose such a dataset and use it to explore patch-based classification in urban and periurban areas, considering 7 distinct semantic classes. In this context, we investigate the accuracy of large CNN classification models and pre-trained networks for SAR imaging systems. Furthermore, we propose a Generative Adversarial Network (GAN) for SAR image generation and test, whether the synthetic data can actually improve classification accuracy.

cs.CV↗

Ultrafast Electronic Dynamics of a Weyl Semimetal MoTe$_2$ Revealed by Time and Angle Resolved Photoemission Spectroscopy

A Weyl semimetal is a new type of topological quantum phase with intriguing physics near the Weyl nodes. Although the equilibrium state of Weyl semimetals has been investigated, the ultrafast dynamics near the Weyl node in the nonequilibrium state is still missing. Here by performing time and angle resolved photoemission spectroscopy on type-II Weyl semimetal MoTe$_2$, we reveal the dispersion of the unoccupied states and identify the Weyl node at 70 meV above E$_F$. Moreover, by tracking the ultrafast relaxation dynamics near the Weyl node upon photo-excitation with energy, momentum and temporal resolution, two intrinsic recovery timescales are observed, a fast one of 430 fs and a slow one of 4.1 ps, which are associated with hot electron cooling by optical phonon cascade emission and anharmonic decay of hot optical phonons respectively. The electron population shows a metallic response, and the two temperature model fitting of the transient electronic temperature gives an electron-phonon coupling constant of $λ\langleΩ^2\rangle\simeq32$ $\textrm{meV}^2$. Our work provides important dynamic information for understanding the relaxation mechanism of a Weyl semimetal and for exploiting potential applications using ultrafast optical control.

cond-mat.mtrl-sci↗

High quality atomically thin PtSe2 films grown by molecular beam epitaxy

Atomically thin PtSe2 films have attracted extensive research interests for potential applications in high-speed electronics, spintronics and photodetectors. Obtaining high quality, single crystalline thin films with large size is critical. Here we report the first successful layer-by-layer growth of high quality PtSe2 films by molecular beam epitaxy. Atomically thin films from 1 ML to 22 ML have been grown and characterized by low-energy electron diffraction, Raman spectroscopy and X-ray photoemission spectroscopy. Moreover, a systematic thickness dependent study of the electronic structure is revealed by angle-resolved photoemission spectroscopy (ARPES), and helical spin texture is revealed by spin-ARPES. Our work provides new opportunities for growing large size single crystalline films for investigating the physical properties and potential applications of PtSe2.

cond-mat.mtrl-sci↗

Stacking-dependent electronic structure of trilayer graphene resolved by nanospot angle-resolved photoemission spectroscopy

The crystallographic stacking order in multilayer graphene plays an important role in determining its electronic structure. In trilayer graphene, rhombohedral stacking (ABC) is particularly intriguing, exhibiting a flat band with an electric-field tunable band gap. Such electronic structure is distinct from simple hexagonal stacking (AAA) or typical Bernal stacking (ABA), and is promising for nanoscale electronics, optoelectronics applications. So far clean experimental electronic spectra on the first two stackings are missing because the samples are usually too small in size (um or nm scale) to be resolved by conventional angle-resolved photoemission spectroscopy (ARPES). Here by using ARPES with nanospot beam size (NanoARPES), we provide direct experimental evidence for the coexistence of three different stackings of trilayer graphene and reveal their distinctive electronic structures directly. By fitting the experimental data, we provide important experimental band parameters for describing the electronic structure of trilayer graphene with different stackings.

cond-mat.mtrl-sci↗

Second generation Dirac cones and inversion symmetry breaking induced gaps in graphene/hexagonal boron nitride

Graphene/h-BN has emerged as a model van der Waals heterostructure, and the band structure engineering by the superlattice potential has led to various novel quantum phenomena including the self-similar Hofstadter butterfly states. Although newly generated second generation Dirac cones (SDCs) are believed to be crucial for understanding such intriguing phenomena, so far fundamental knowledge of SDCs in such heterostructure, e.g. locations and dispersion of SDCs, the effect of inversion symmetry breaking on the gap opening, still remains highly debated due to the lack of direct experimental results. Here we report first direct experimental results on the dispersion of SDCs in 0$^\circ$ aligned graphene/h-BN heterostructure using angle-resolved photoemission spectroscopy. Our data reveal unambiguously SDCs at the corners of the superlattice Brillouin zone, and at only one of the two superlattice valleys. Moreover, gaps of $\approx$ 100 meV and $\approx$ 160 meV are observed at the SDCs and the original graphene Dirac cone respectively. Our work highlights the important role of a strong inversion symmetry breaking perturbation potential in the physics of graphene/h-BN, and fills critical knowledge gaps in the band structure engineering of Dirac fermions by a superlattice potential.

cond-mat.mtrl-sci↗

Lorentz-violating type-II Dirac fermions in transition metal dichalcogenide PtTe$_2$

Topological semimetals have recently attracted extensive research interests as host materials to condensed matter physics counterparts of Dirac and Weyl fermions originally proposed in high energy physics. These fermions with linear dispersions near the Dirac or Weyl points obey Lorentz invariance, and the chiral anomaly leads to novel quantum phenomena such as negative magnetoresistance. The Lorentz invariance is, however, not necessarily respected in condensed matter physics, and thus Lorentz-violating type-II Dirac fermions with strongly tilted cones can be realized in topological semimetals. Here, we report the first experimental evidence of type-II Dirac fermions in bulk stoichiometric PtTe$_2$ single crystal. Angle-resolved photoemission spectroscopy (ARPES) measurements and first-principles calculations reveal a pair of strongly tilted Dirac cones along the $Γ$-A direction under the symmetry protection, confirming PtTe$_2$ as a type-II Dirac semimetal. The realization of type-II Dirac fermions opens a new door for exotic physical properties distinguished from type-I Dirac fermions in condensed matter materials.

cond-mat.mtrl-sci↗

Direct observation of local Rashba spin polarization and spin-layer locking in centrosymmetric monolayer PtSe$_2$

The generally accepted view that spin polarization is induced by the asymmetry of the global crystal space group has limited the search for spintronics [1] materials to non-centrosymmetric materials. Recently it has been suggested that spin polarization originates fundamentally from local atomic site asymmetries [2], and therefore centrosymmetric materials may exhibit previously overlooked spin polarizations. Here by using spin- and angle-resolved photoemission spectroscopy (spin-ARPES), we report helical spin texture induced by local Rashba effect (R-2) in centrosymmetric monolayer PtSe$_2$ film. First-principles calculations and effective analytical model support the spin-layer locking picture: in contrast to the spin splitting in conventional Rashba effect (R-1), the opposite spin polarizations induced by R-2 are degenerate in energy while spatially separated in the top and bottom Se layers. These results not only enrich our understanding of spin polarization physics, but also may find applications in electrically tunable spintronics.

cond-mat.mtrl-sci↗

Monolayer charge-neutral graphene on platinum with extremely weak electron-phonon coupling

Epitaxial growth of graphene on transition metal substrates is an important route for obtaining large scale graphene. However, the interaction between graphene and the substrate often leads to multiple orientations, distorted graphene band structure, large doping and strong electron-phonon coupling. Here we report the growth of monolayer graphene with high crystalline quality on Pt(111) substrate by using a very low concentration of an internal carbon source with high annealing temperature. The controlled growth leads to electronically decoupled graphene: it is nearly charge neutral and has extremely weak electron-phonon coupling (coupling strength $λ$ $\approx$ 0.056) as revealed by angle-resolved photoemission spectroscopic measurements. The thermodynamics and kinetics of the carbon diffusion process is investigated by DFT calculation. Such graphene with negligible graphene-substrate interaction provides an important platform for fundamental research as well as device applications when combined with a nondestructive sample transfer technique.

cond-mat.mtrl-sci↗

Uniqueness and nondegeneracy of sign-changing radial solutions to an almost critical elliptic problem

We study sign-changing radial solutions for the following semi-linear elliptic equation \begin{align*} Δu-u+|u|^{p-1}u=0\quad{\rm{in}}\ \mathbb{R}^N,\quad u\in H^1(\mathbb{R}^N), \end{align*} where $1<p<\frac{N+2}{N-2}$, $N\geq3$. It is well-known that this equation has a unique positive radial solution and sign-changing radial solutions with exactly $k$ nodes. In this paper, we show that such sign-changing radial solution is also unique when $p$ is close to $\frac{N+2}{N-2}$. Moreover, those solutions are non-degenerate, i.e., the kernel of the linearized operator is exactly $N$-dimensional.

math.AP↗

On the Ambrosetti-Malchiodi-Ni Conjecture for general submanifolds

We study positive solutions of the following semilinear equation $$\varepsilon^2Δ_{\bar g} u - V(z) u+ u^{p} =0\,\hbox{ on }\,M, $$ where $(M, \bar g )$ is a compact smooth $n$-dimensional Riemannian manifold without boundary or the Euclidean space $\mathbb R^n$, $\varepsilon$ is a small positive parameter, $p>1$ and $V$ is a uniformly positive smooth potential. Given $k=1,\dots,n-1$, and $1 < p < \frac{n+2-k}{n-2-k}$. Assuming that $K$ is a $k$-dimensional smooth, embedded compact submanifold of $M$, which is stationary and non-degenerate with respect to the functional $\int_K V^{\frac{p+1}{p-1}-\frac{n-k}{2}}dvol$, we prove the existence of a sequence $\varepsilon=\varepsilon_j\to 0$ and positive solutions $u_\varepsilon$ that concentrate along $K$. This result proves in particular the validity of a conjecture by Ambrosetti-Malchiodi-Ni, extending a recent result by Wang-Wei-Yang, where the one co-dimensional case has been considered. Furthermore, our approach explores a connection between solutions of the nonlinear Schrödinger equation and $f$-minimal submanifolds in manifolds with density.

math.AP↗

Infinitely many positive solutions of nonlinear Schrödinger equations with non-symmetric potentials

We consider the standing-wave problem for a nonlinear Schrödinger equation, corresponding to the semilinear elliptic problem \begin{equation*} -Δu+V(x)u=|u|^{p-1}u,\ u\in H^1(\mathbb{R}^2), \end{equation*} where $V(x)$ is a uniformly positive potential and $p>1$. Assuming that \begin{equation*} V(x)=V_\infty+\frac{a}{|x|^m}+O\Big(\frac{1}{|x|^{m+σ}}\Big),\ \text{as}\ |x|\rightarrow+\infty, %\tag{$V2$} \end{equation*} for instance if $p>2$, $m>2$ and $σ>1$ we prove the existence of infinitely many positive solutions. If $V(x)$ is radially symmetric, this result was proved in \cite{WY-10}. The proof without symmetries is much more difficult, and for that we develop a new {\em intermediate Lyapunov-Schmidt reduction method}, which is a compromise between the finite and infinite dimensional versions of it.

math.AP↗

Fully gapped topological surface states in Bi$_2$Se$_3$ films induced by a d-wave high-temperature superconductor

Topological insulators are a new class of materials, that exhibit robust gapless surface states protected by time-reversal symmetry. The interplay between such symmetry-protected topological surface states and symmetry-broken states (e.g. superconductivity) provides a platform for exploring novel quantum phenomena and new functionalities, such as 1D chiral or helical gapless Majorana fermions, and Majorana zero modes which may find application in fault-tolerant quantum computation. Inducing superconductivity on topological surface states is a prerequisite for their experimental realization. Here by growing high quality topological insulator Bi$_2$Se$_3$ films on a d-wave superconductor Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ using molecular beam epitaxy, we are able to induce high temperature superconductivity on the surface states of Bi$_2$Se$_3$ films with a large pairing gap up to 15 meV. Interestingly, distinct from the d-wave pairing of Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$, the proximity-induced gap on the surface states is nearly isotropic and consistent with predominant s-wave pairing as revealed by angle-resolved photoemission spectroscopy. Our work could provide a critical step toward the realization of the long sought-after Majorana zero modes.

cond-mat.supr-con↗

Orbital stability of bound states of nonlinear Schrodinger equations with linear and nonlinear optical lattices

We study the orbital stability and instability of single-spike bound states of semiclassical nonlinear Schrodinger (NLS) equations with critical exponent, linear and nonlinear optical lattices (OLs). These equations may model two-dimensional Bose-Einstein condensates in linear and nonlinear OLs. When linear OLs are switched off, we derive the asymptotic expansion formulas and obtain necessary conditions for the orbital stability and instability of single-spike bound states, respectively. When linear OLs are turned on, we consider three different conditions of linear and nonlinear OLs to develop mathematical theorems which are most general on the orbital stability problem.

math.AP↗