arXiv subjects

Weisheng Zhao

Publications and source records attributed to Weisheng Zhao.

At least 37 records · Page 2Linked to original sources

arXiv2025

Field-Free Superconducting Diode Enabled by Geometric Asymmetry and Perpendicular Magnetization

The superconducting diode effect (SDE)- manifested as directional, dissipationless supercurrents - is pivotal for realizing energy-efficient superconducting logic and memory technologies. Achieving high-efficiency SDE without external magnetic fields, however, remains a fundamental challenge. Here, we report a strongly enhanced, field-free SDE in Pt/Co/Nb heterostructures, enabled by the interplay of engineered geometric asymmetry and stray fields from a perpendicularly magnetized Co layer. This configuration promotes directional vortex entry and spatially selective pinning, yielding diode efficiencies that exceed all previously reported field-free values. Temperature- and field-dependent transport measurements, supported by micromagnetic simulations, reveal that the enhanced nonreciprocity stems from three cooperative mechanisms: asymmetric vortex entry, localized magnetic pinning, and Lorentz-force imbalance. These findings establish a scalable, CMOS-compatible platform for high-performance superconducting rectifiers, offering new opportunities for cryogenic spintronics and quantum electronics.

cond-mat.supr-con↗

arXiv2025

ACE-GNN: Adaptive GNN Co-Inference with System-Aware Scheduling in Dynamic Edge Environments

The device-edge co-inference paradigm effectively bridges the gap between the high resource demands of Graph Neural Networks (GNNs) and limited device resources, making it a promising solution for advancing edge GNN applications. Existing research enhances GNN co-inference by leveraging offline model splitting and pipeline parallelism (PP), which enables more efficient computation and resource utilization during inference. However, the performance of these static deployment methods is significantly affected by environmental dynamics such as network fluctuations and multi-device access, which remain unaddressed. We present ACE-GNN, the first Adaptive GNN Co-inference framework tailored for dynamic Edge environments, to boost system performance and stability. ACE-GNN achieves performance awareness for complex multi-device access edge systems via system-level abstraction and two novel prediction methods, enabling rapid runtime scheme optimization. Moreover, we introduce a data parallelism (DP) mechanism in the runtime optimization space, enabling adaptive scheduling between PP and DP to leverage their distinct advantages and maintain stable system performance. Also, an efficient batch inference strategy and specialized communication middleware are implemented to further improve performance. Extensive experiments across diverse applications and edge settings demonstrate that ACE-GNN achieves a speedup of up to 12.7x and an energy savings of 82.3% compared to GCoDE, as well as 11.7 better energy efficiency than Fograph.

cs.DC↗

arXiv2025

Reconfigurable Physical Unclonable Function based on SOT-MRAM Chips

Hardware-based security primitives have become critical to enhancing information security in the Internet of Things (IoT) era. Physical unclonable functions (PUFs) utilize the inherent variations in the manufacturing process to generate cryptographic keys unique to a device. Reconfigurable PUFs (rPUFs) can update cryptographic keys for enhanced security in dynamic operational scenarios involving huge amounts of data, which makes them suitable for implementation in CMOS-integrated spin-orbit torque magnetic random access memory (SOT-MRAM) chips. However, a key challenge is achieving real-time reconfiguration independent of the environmental conditions, particularly the operating temperature. We propose a dual-pulse reconfiguration strategy for rPUFs in CMOS-integrated SOT-MRAM chips that effectively widens the operating window and achieves resilience across a wide range of operating temperatures without the need for dynamic feedback that overly complicates circuit design. The proposed strategy lays a solid foundation for the next generation of hardware-based security primitives to protect IoT architectures.

cs.CR↗

arXiv2025

Finesse: An Agile Design Framework for Pairing-based Cryptography via Software/Hardware Co-Design

Pairing-based cryptography (PBC) is crucial in modern cryptographic applications. With the rapid advancement of adversarial research and the growing diversity of application requirements, PBC accelerators need regular updates in algorithms, parameter configurations, and hardware design. However, traditional design methodologies face significant challenges, including prolonged design cycles, difficulties in balancing performance and flexibility, and insufficient support for potential architectural exploration. To address these challenges, we introduce Finesse, an agile design framework based on co-design methodology. Finesse leverages a co-optimization cycle driven by a specialized compiler and a multi-granularity hardware simulator, enabling both optimized performance metrics and effective design space exploration. Furthermore, Finesse adopts a modular design flow to significantly shorten design cycles, while its versatile abstraction ensures flexibility across various curve families and hardware architectures. Finesse offers flexibility, efficiency, and rapid prototyping, comparing with previous frameworks. With compilation times reduced to minutes, Finesse enables faster iteration cycles and streamlined hardware-software co-design. Experiments on popular curves demonstrate its effectiveness, achieving $34\times$ improvement in throughput and $6.2\times$ increase in area efficiency compared to previous flexible frameworks, while outperforming state-of-the-art non-flexible ASIC designs with a $3\times$ gain in throughput and $3.2\times$ improvement in area efficiency.

cs.AR↗

arXiv2025

Enhanced anomalous Hall conductivity via Ga doping in Mn\textsubscript{3}Sn and Mn\textsubscript{3}Ge

This study examines the anomalous Hall effect (AHE) in the Heusler series \ce{Mn3Z} (Z=Ga, Ge, Sn), with a particular emphasis on the manipulation of non-collinear antiferromagnetic structures to enhance AHE. By employing density-functional theory and first-principles calculations, we demonstrate that the anomalous Hall conductivity is markedly responsive to electron filling. By strategically doping Ga into \ce{Mn3Sn} and \ce{Mn3Ge} in order to modulate the electron density, a significant increase in anomalous Hall conductivity (AHC) is achieved. It is noteworthy that a Ga:Sn ratio of 1:5 yields peak AHC values exceeding $\mathrm{700(Ω\cdot cm)^{-1}}$, while 3:7 Ga-Ge ratios can result in AHC values surpassing $600\mathrm{(Ω\cdot cm)^{-1}}$. A comparison between the virtual crystal approximation and supercell construction methods for doping has revealed consistent trends. The results of this study pave the way for optimizing AHE in non-collinear AFM materials.

cond-mat.mtrl-sci↗

arXiv2025

Light-Induced Giant Enhancement of the Nonlinear Hall Effect in Two-Dimensional Electron Gases at KTaO3 (111) Interfaces

The nonlinear Hall effect (NLHE), an emergent phenomenon in noncentrosymmetric systems, enables the generation of a transverse voltage without an external magnetic field through a second-order electrical response. However, achieving a sizable NLHE signal remains a critical challenge for its application in frequency-doubling and rectifying devices. Here, we report a light-induced giant enhancement of the NLHE in the two-dimensional electron gas (2DEG) at the CaZrO3/KTaO3 (111) interface. Under light illumination, the second harmonic Hall voltage (V2ω y) increases substantially and undergoes a sign reversal. Correspondingly,the second-order transverse conductivity increases by nearly five orders of magnitude, reaching 2.4 um V-1 omega-1, while also reversing its sign. Scaling analysis indicates that skew scattering is the dominant mechanism underlying the NLHE and is highly tunable via optical gating. Photoexcitation pumps electrons from in-gap states into the higher-lying Ta 5d conduction band, generating high-mobility photocarriers that significantly increase the cubic transport scattering time, thereby driving a dramatic enhancement of σ(2) yxx. First-principles calculations further reveal that the Berry curvature distribution on the Fermi surface strongly depends on band filling. As the Fermi level approaches a band crossing in the Ta 5d subband near the M point, the Berry curvature triple undergoes a sign change, accounting for the experimentally observed sign reversal of the nonlinear Hall response. Our work offers a new strategy to optically boost and tune the nonlinear Hall effect in oxide 2DEG systems, paving the way for applications in light-controlled rectification and nonlinear electronic devices.

cond-mat.mes-hall↗

arXiv2025

Robust Wannierization including magnetization and spin-orbit coupling via projectability disentanglement

Maximally-localized Wannier functions (MLWFs) are widely employed as an essential tool for calculating the physical properties of materials due to their localized nature and computational efficiency. Projectability-disentangled Wannier functions (PDWFs) have recently emerged as a reliable and efficient approach for automatically constructing MLWFs that span both occupied and lowest unoccupied bands. Here, we extend the applicability of PDWFs to magnetic systems and/or those including spin-orbit coupling, and implement such extensions in automated workflows. Furthermore, we enhance the robustness and reliability of constructing PDWFs by defining an extended protocol that automatically expands the projectors manifold, when required, by introducing additional appropriate hydrogenic atomic orbitals. We benchmark our extended protocol on a set of 200 chemically diverse materials, as well as on the 40 systems with the largest band distance obtained with the standard PDWF approach, showing that on our test set the present approach delivers a 100% success rate in obtaining accurate Wannier-function interpolations, i.e., an average band distance below 15 meV between the DFT and Wannier-interpolated bands, up to 2 eV above the Fermi level.

cond-mat.mtrl-sci↗

arXiv2025

Efficient SRAM-PIM Co-design by Joint Exploration of Value-Level and Bit-Level Sparsity

Processing-in-memory (PIM) is a transformative architectural paradigm designed to overcome the Von Neumann bottleneck. Among PIM architectures, digital SRAM-PIM emerges as a promising solution, offering significant advantages by directly integrating digital logic within the SRAM array. However, rigid crossbar architecture and full array activation pose challenges in efficiently utilizing traditional value-level sparsity. Moreover, neural network models exhibit a high proportion of zero bits within non-zero values, which remain underutilized due to architectural constraints. To overcome these limitations, we present Dyadic Block PIM (DB-PIM), a groundbreaking algorithm-architecture co-design framework to harness both value-level and bit-level sparsity. At the algorithm level, our hybrid-grained pruning technique, combined with a novel sparsity pattern, enables effective sparsity management. Architecturally, DB-PIM incorporates a sparse network and customized digital SRAM-PIM macros, including input pre-processing unit (IPU), dyadic block multiply units (DBMUs), and Canonical Signed Digit (CSD)-based adder trees. It circumvents structured zero values in weights and bypasses unstructured zero bits within non-zero weights and block-wise all-zero bit columns in input features. As a result, the DB-PIM framework skips a majority of unnecessary computations, thereby driving significant gains in computational efficiency. Results demonstrate that our DB-PIM framework achieves up to 8.01x speedup and 85.28% energy savings, significantly boosting computational efficiency in digital SRAM-PIM systems.

cs.AR↗

arXiv2025

PRIME: Physics-Related Intelligent Mixture of Experts for Transistor Characteristics Prediction

In recent years, machine learning has been extensively applied to data prediction during process ramp-up, with a particular focus on transistor characteristics for circuit design and manufacture. However, capturing the nonlinear current response across multiple operating regions remains a challenge for neural networks. To address such challenge, a novel machine learning framework, PRIME (Physics-Related Intelligent Mixture of Experts), is proposed to capture and integrate complex regional characteristics. In essence, our framework incorporates physics-based knowledge with data-driven intelligence. By leveraging a dynamic weighting mechanism in its gating network, PRIME adaptively activates the suitable expert model based on distinct input data features. Extensive evaluations are conducted on various gate-all-around (GAA) structures to examine the effectiveness of PRIME and considerable improvements (60\%-84\%) in prediction accuracy are shown over state-of-the-art models.

cs.LG↗

arXiv2025

Nonlinearity Modulation of Auto-oscillations in Three-terminal Magnetic Tunnel Junctions

Spin torque nano-oscillators (STNOs) hold encouraging promise for nanoscale microwave generators, modulators, and new types of intelligent computing. The nonlinearity, describing the current-induced tunability of oscillating frequency, is a distinctive feature of STNOs, which plays important roles in efficient manipulation of microwave frequencies, rapid spec-trum analysis, and the design of neuromorphic devices. However, experimental research on its efficient modulation remains limited. Here, we comprehensively studied the impact of several factors on nonlinearity in nanoscale three-terminal MTJ-STNOs, including the external magnetic field, the thickness of CoFeB free layer, and the combination of spin-transfer torque (STT) and spin-orbit torque (SOT). Among these factors, nonlinearity can be significantly tuned by the direction of magnetic field as well as the thickness of CoFeB free layer. Notably, it reaches zero in 1.1 nm CoFeB, where the oscillation frequency is not affected by the drive current. Such property provides a more intrinsic and robust approach to achieve zero nonlinearity in STNOs, which is advantageous for high-quality microwave generators. More importantly, we found that nonlinearity can also be electrically modulated by both STT and SOT currents, and develop a refined model that accounts for the additional contribution of the SOT current to explain the mechanism. This electrical approach is more convenient, energy-efficient, and well-suited for miniaturization. Our findings offer a comprehensive understanding and open up a new dimension for the current tunability of nonlinearity in MTJ-STNOs, benefiting further optimization in nanoscale STNO-based microwave generators and neuromorphic computing devices.

physics.app-ph↗

arXiv2025

CIMFlow: An Integrated Framework for Systematic Design and Evaluation of Digital CIM Architectures

Digital Compute-in-Memory (CIM) architectures have shown great promise in Deep Neural Network (DNN) acceleration by effectively addressing the "memory wall" bottleneck. However, the development and optimization of digital CIM accelerators are hindered by the lack of comprehensive tools that encompass both software and hardware design spaces. Moreover, existing design and evaluation frameworks often lack support for the capacity constraints inherent in digital CIM architectures. In this paper, we present CIMFlow, an integrated framework that provides an out-of-the-box workflow for implementing and evaluating DNN workloads on digital CIM architectures. CIMFlow bridges the compilation and simulation infrastructures with a flexible instruction set architecture (ISA) design, and addresses the constraints of digital CIM through advanced partitioning and parallelism strategies in the compilation flow. Our evaluation demonstrates that CIMFlow enables systematic prototyping and optimization of digital CIM architectures across diverse configurations, providing researchers and designers with an accessible platform for extensive design space exploration.

cs.AR↗

arXiv2025

Geometric Asymmetry-Enhanced Nonreciprocal Supercurrent Transport Revealed by Second-Harmonic Response

Nonreciprocal transport in superconducting systems serves as a powerful probe of symmetry-breaking mechanisms, with the superconducting diode effect emerging as a key manifestation enabling cryogenic rectification. While theoretical models have extensively explored superconducting nonreciprocity, experimental verification remains challenging, as conventional transport measurements struggle to disentangle intrinsic and extrinsic contributions. Nonlinear transport analysis, particularly second-harmonic response, offers an alternative approach by providing a sensitive probe for detecting spatial inversion symmetry breaking in the presence of time-reversal symmetry violation. Here, we systematically investigate the influence of geometric symmetry on nonreciprocal transport by comparing two triangular-extended Hall bar configurations with a symmetric Hall bar control. Second-harmonic nonlinear transport measurements reveal that the triangular extension significantly enhances nonreciprocal response, exhibiting a clear dependence on the base angle of the extension. These findings establish a direct connection between mesoscopic geometry and macroscopic nonreciprocity, demonstrating how spatial symmetry and vortex dynamics govern nonlinear transport. This insight offers a guiding principle for designing superconducting rectification architectures.

cond-mat.supr-con↗

arXiv2025

Giant Orbital Torque-driven Picosecond Switching in Magnetic Tunnel Junctions

Orbital Hall effect was recently discovered as a novel pathway for driving magnetic moment. However, the integration of orbital Hall effect in magnetic memories suffers from low orbital-to-spin conversion efficiency and incompatibility with magnetic tunnel junctions. Here we demonstrate an orbital Hall effect-driven magnetic tunnel junction based on Ru/W bilayer, where the Ru layer possesses a strong orbital Hall conductivity and the α-W layer features an orbital-to-spin conversion efficiency exceeding 90% because of the large orbit-spin diffusivity. By harnessing the giant orbital torque, we achieve a 28.7-picosecond switching and a five to eight-fold reduction in driving voltages over conventional spin-orbit torque magnetic memories. Our work bridges the critical gap between orbital effects and magnetic memory applications, significantly advancing the field of spintronics and orbitronics.

cond-mat.mtrl-sci↗

arXiv2025

Dimensionality Enhanced Out-of-Plane Spin Currents in NbIrTe$_4$ for Efficient Field-Free Switching of Perpendicular Magnetization

Efficient generation of out-of-plane (OOP) spin currents is crucial for advanced spintronic memory applications. However, the theoretical understanding and experimental implementation of robust OOP spin currents for high-density and low-power magnetization switching remain significant challenges of spintronics. Here, we demonstrate that transitioning NbIrTe$_4$ from a two-dimensional quantum spin Hall insulator to a three-dimensional type-II Weyl semimetal markedly enhances OOP spin current generation. The bulk topological Weyl semimetal nature of NbIrTe$_4$, characterized by its Weyl cone, significantly enhances the OOP spin Berry curvature, enabling an unprecedented OOP spin Hall conductivity exceeding $10^5\hbar/2e$ $Ω^{-1}m^{-1} $. This enhancement, surpassing the in-plane component by more than fourfold, enables efficient and field-free spin-orbit torque (SOT) switching of perpendicular magnetization with a low current density of 1.4 MA/cm$^2$. The improved spin Hall conductivity reduces the overall power consumption by more than two orders of magnitude compared to existing systems, such as heavy metals. Our findings highlight the pivotal role of dimensionality in harnessing robust OOP spin currents in topological Weyl semimetals, paving the way for the development of high-density, low-power spintronic memory technologies.

cond-mat.mes-hall↗

arXiv2025

QUEST: A Quantized Energy-Aware SNN Training Framework for Multi-State Neuromorphic Devices

Neuromorphic devices, leveraging novel physical phenomena, offer a promising path toward energy-efficient hardware beyond CMOS technology by emulating brain-inspired computation. However, their progress is often limited to proof-of-concept studies due to the lack of flexible spiking neural network (SNN) algorithm frameworks tailored to device-specific characteristics, posing a significant challenge to scalability and practical deployment. To address this, we propose QUEST, a unified co-design framework that directly trains SNN for emerging devices featuring multilevel resistances. With Skyrmionic Magnetic Tunnel Junction (Sk-MTJ) as a case study, experimental results on the CIFAR-10 dataset demonstrate the framework's ability to enable scalable on-device SNN training with minimal energy consumption during both feedforward and backpropagation. By introducing device mapping pattern and activation operation sparsity, QUEST achieves effective trade-offs among high accuracy (89.6%), low bit precision (2-bit), and energy efficiency (93 times improvement over the ANNs). QUEST offers practical design guidelines for both the device and algorithm communities, providing insights to build energy-efficient and large-scale neuromorphic systems.

physics.app-ph↗

arXiv2025

Superconductivity and a van Hove singularity confined to the surface of a topological semimetal

The interplay between electronic topology and superconductivity is the subject of great current interest in condensed matter physics. For example, superconductivity induced on the surface of topological insulators is predicted to be triplet in nature, while the interplay between electronic correlations and topology may lead to unconventional superconductivity as in twisted bilayer graphene. Here, we unveil an unconventional two-dimensional superconducting state in the recently discovered Dirac nodal line semimetal ZrAs2 which is exclusively confined to the top and bottom surfaces within the crystal's ab plane. As a remarkable consequence of this emergent state, we observe a Berezinskii-Kosterlitz-Thouless (BKT) transition, the hallmark of two-dimensional superconductivity. Notably, this is the first observation of a BKT transition on the surface of a three-dimensional system. Furthermore, employing angle-resolved photoemission spectroscopy and first-principles calculations, we find that these same surfaces also host a two-dimensional van Hove singularity near the Fermi energy. The proximity of van Hove singularity to the Fermi level leads to enhanced electronic correlations contributing to the stabilization of superconductivity at the surface of ZrAs2, a unique phenomenon among topological semimetals. The surface-confined nature of the van Hove singularity, and associated superconductivity, realized for the first time, opens new avenues to explore the interplay between low-dimensional quantum topology, correlations, and superconductivity in a bulk material without resorting to the superconducting proximity effect.

cond-mat.supr-con↗

arXiv2025

Triple-Q state in magnetic breathing kagome lattice

Magnetic frustration in two-dimensional spin lattices with triangular motifs underpins a series of exotic states, ranging from multi-Q configurations to disordered spin-glasses. The antiferromagnetic kagome lattice, characterized by its network of corner-sharing triangles, represents a paradigmatic frustrated system exhibiting macroscopic degeneracy. Expanding upon the kagomerization mechanism, we focus on the magnetic breathing kagome lattice formed by a Mn monolayer deposited on a heavy metal substrate and capped with h-BN. The Mn kagome arrangement induces pronounced magnetic frustration, as evidenced by the nearly flat bands derived from spin spiral energy calculations. Including further-neighbor interactions reveals a spin spiral energy minimum along the $Γ$-K line and an intriguing triple-Q state with nonzero topological charge, potentially leading to highly nonlinear Hall effects. Furthermore, the flat band properties can further give rise to an even more complex spin configuration, marked by several Q-pockets in the spin structure factor. These results present a fertile ground for advancing the study of multi-Q states and exploring emergent topological phenomena.

cond-mat.mtrl-sci↗

arXiv2025

Large Anomalous Hall Effect in a Noncoplanar Magnetic Heterostructure

The anomalous Hall effect (AHE) occurs in magnetic systems and also unexpectedly in non-magnetic materials adjacent to magnetic insulators via the heterointerface interactions. However, the AHE in heterostructures induced by magnetic proximity effect remains quite weak, restricting their practical device applications. Here, we report a large intrinsic AHE with a resistivity of 114 nΩ cm at 5 K in noncoplanar magnetic heterostructures of Cr5Te6/Pt. This is the record-high AHE value among all the magnetic insulators/heavy metal heterostructures. A reversal of the AHE signal occurs due to the reconstruction of Berry curvature at the Fermi level, which is verified by the first-principles calculations. Topological spin textures at the interface are directly visualized via high-magnetic-field magnetic force microscopy, which accounts for the large AHE, as confirmed by the atomic simulations. These findings open a new avenue for exploring the large AHE in heterointerfaces and facilitate the potential applications in topological spintronic devices.

cond-mat.mtrl-sci↗