arXiv subjects

Weisheng Zhao

Publications and source records attributed to Weisheng Zhao.

At least 55 records · Page 3Linked to original sources

arXiv2024

Phenomenology of orbital torque, pumping and mixing conductance in metallic bilayers

The conversion between spin and orbital currents is at the origin of the orbital torque and its Onsager reciprocal, the orbital pumping. Here, we propose a phenomenological model to describe the orbital torque in magnetic bilayers composed of an orbital source (i.e., a light metal such as Ti, Ru, CuOx...) and a spin-orbit coupled magnet (i.e., typically Ni, (Co/Pt)$_n$, etc.). This approach accounts for spin-to-orbit and orbit-to-spin conversion in the ferromagnet and at the interface. We show that the orbital torque arises from a compromise between orbital current injection from the orbital source to the ferromagnet and spin current backflow from the ferromagnet back to the orbital source. We also discuss the concept of orbital-mixing conductance and introduce the "orbit-spin-" and "spin-orbit-mixing" conductances that govern the orbital torque and orbital pumping, respectively.

cond-mat.mes-hall↗

arXiv2024

Orbital diffusion, polarization and swapping in centrosymmetric metals

We propose a general theory of charge, spin, and orbital diffusion based on Keldysh formalism. Our findings indicate that the diffusivity of orbital angular momentum in metals is much lower than that of spin or charge due to the strong orbital intermixing in crystals. Furthermore, our theory introduces the concept of spin-orbit polarization by which a pure orbital (spin) current induces a longitudinal spin (orbital) current, a process as efficient as spin polarization in ferromagnets. Finally, we find that orbital currents undergo momentum swapping, even in the absence of spin-orbit coupling. This theory establishes several key parameters for orbital transport of direct importance to experiments.

cond-mat.mes-hall↗

arXiv2024

Pomeranchuk instability of a topological crystal

Nematic quantum fluids appear in strongly interacting systems and break the rotational symmetry of the crystallographic lattice. In metals, this is connected to a well-known instability of the Fermi liquid-the Pomeranchuk instability. Using scanning tunneling microscopy, we identified this instability in a highly unusual setting: on the surface of an elemental topological metal, arsenic. By directly visualizing the Fermi surface of the surface state via scanning tunneling spectroscopy and photoemission spectroscopy, we find that the Fermi surface gets deformed and becomes elliptical at the energies where the nematic state is present. Known instances of nematic instability typically need van-Hove singularities or multi-orbital physics as drivers. In contrast, the surface states of arsenic are essentially indistinguishable from well-confined isotropic Rashba bands near the Fermi level, rendering our finding the first realization of Pomeranchuk instability of the topological surface state.

cond-mat.str-el↗

arXiv2024

Anatomy of Thermally Interplayed Spin-Orbit Torque Driven Antiferromagnetic Switching

Current-induced antiferromagnetic (AFM) switching remains critical in spintronics, yet the interplay between thermal effects and spin torques still lacks clear clarification. Here we experimentally investigate the thermally interplayed spin-orbit torque induced AFM switching in magnetic tunnel junctions via pulse-width dependent reversal and time-resolved measurements. By introducing the Langevin random field into the AFM precession equation, we establish a novel AFM switching model that anatomically explains the experimental observations. Our findings elucidate the currentinduced AFM switching mechanism and offer significant promise for advancements in spintronics.

cond-mat.mes-hall↗

arXiv2024

HGNAS: Hardware-Aware Graph Neural Architecture Search for Edge Devices

Graph Neural Networks (GNNs) are becoming increasingly popular for graph-based learning tasks such as point cloud processing due to their state-of-the-art (SOTA) performance. Nevertheless, the research community has primarily focused on improving model expressiveness, lacking consideration of how to design efficient GNN models for edge scenarios with real-time requirements and limited resources. Examining existing GNN models reveals varied execution across platforms and frequent Out-Of-Memory (OOM) problems, highlighting the need for hardware-aware GNN design. To address this challenge, this work proposes a novel hardware-aware graph neural architecture search framework tailored for resource constraint edge devices, namely HGNAS. To achieve hardware awareness, HGNAS integrates an efficient GNN hardware performance predictor that evaluates the latency and peak memory usage of GNNs in milliseconds. Meanwhile, we study GNN memory usage during inference and offer a peak memory estimation method, enhancing the robustness of architecture evaluations when combined with predictor outcomes. Furthermore, HGNAS constructs a fine-grained design space to enable the exploration of extreme performance architectures by decoupling the GNN paradigm. In addition, the multi-stage hierarchical search strategy is leveraged to facilitate the navigation of huge candidates, which can reduce the single search time to a few GPU hours. To the best of our knowledge, HGNAS is the first automated GNN design framework for edge devices, and also the first work to achieve hardware awareness of GNNs across different platforms. Extensive experiments across various applications and edge devices have proven the superiority of HGNAS. It can achieve up to a 10.6x speedup and an 82.5% peak memory reduction with negligible accuracy loss compared to DGCNN on ModelNet40.

cs.LG↗

arXiv2024

Towards Efficient SRAM-PIM Architecture Design by Exploiting Unstructured Bit-Level Sparsity

Bit-level sparsity in neural network models harbors immense untapped potential. Eliminating redundant calculations of randomly distributed zero-bits significantly boosts computational efficiency. Yet, traditional digital SRAM-PIM architecture, limited by rigid crossbar architecture, struggles to effectively exploit this unstructured sparsity. To address this challenge, we propose Dyadic Block PIM (DB-PIM), a groundbreaking algorithm-architecture co-design framework. First, we propose an algorithm coupled with a distinctive sparsity pattern, termed a dyadic block (DB), that preserves the random distribution of non-zero bits to maintain accuracy while restricting the number of these bits in each weight to improve regularity. Architecturally, we develop a custom PIM macro that includes dyadic block multiplication units (DBMUs) and Canonical Signed Digit (CSD)-based adder trees, specifically tailored for Multiply-Accumulate (MAC) operations. An input pre-processing unit (IPU) further refines performance and efficiency by capitalizing on block-wise input sparsity. Results show that our proposed co-design framework achieves a remarkable speedup of up to 7.69x and energy savings of 83.43%.

cs.AR↗

arXiv2024

GNNavigator: Towards Adaptive Training of Graph Neural Networks via Automatic Guideline Exploration

Graph Neural Networks (GNNs) succeed significantly in many applications recently. However, balancing GNNs training runtime cost, memory consumption, and attainable accuracy for various applications is non-trivial. Previous training methodologies suffer from inferior adaptability and lack a unified training optimization solution. To address the problem, this work proposes GNNavigator, an adaptive GNN training configuration optimization framework. GNNavigator meets diverse GNN application requirements due to our unified software-hardware co-abstraction, proposed GNNs training performance model, and practical design space exploration solution. Experimental results show that GNNavigator can achieve up to 3.1x speedup and 44.9% peak memory reduction with comparable accuracy to state-of-the-art approaches.

cs.LG↗

arXiv2024

NAND-like SOT-MRAM-based Approximate Storage for Error-Tolerant Applications

We demonstrate approximate storage based on NAND-like spin-orbit torque (SOT) MRAM, through "device-modeling-architecture" explorations. We experimentally achieve down to 1E-5 level selectivity. Selectivity and low-power solutions are established by numerical calculation workflow. System-level power consumption is evaluated in the 512 KB last-level cache according to 5 quality levels. Error-tolerant applications, such as image processing, alleviate the demand for selectivity down to the 5E-2 level, leading to 54% ~ 61% energy-saving. Our proposal paves the novel and suitable path for high-density and low-power NAND-like SOT-MRAM.

physics.app-ph↗

arXiv2024

Graph Neural Networks Automated Design and Deployment on Device-Edge Co-Inference Systems

The key to device-edge co-inference paradigm is to partition models into computation-friendly and computation-intensive parts across the device and the edge, respectively. However, for Graph Neural Networks (GNNs), we find that simply partitioning without altering their structures can hardly achieve the full potential of the co-inference paradigm due to various computational-communication overheads of GNN operations over heterogeneous devices. We present GCoDE, the first automatic framework for GNN that innovatively Co-designs the architecture search and the mapping of each operation on Device-Edge hierarchies. GCoDE abstracts the device communication process into an explicit operation and fuses the search of architecture and the operations mapping in a unified space for joint-optimization. Also, the performance-awareness approach, utilized in the constraint-based search process of GCoDE, enables effective evaluation of architecture efficiency in diverse heterogeneous systems. We implement the co-inference engine and runtime dispatcher in GCoDE to enhance the deployment efficiency. Experimental results show that GCoDE can achieve up to $44.9\times$ speedup and $98.2\%$ energy reduction compared to existing approaches across various applications and system configurations.

cs.LG↗

arXiv2024

Interlayer Dzyaloshinskii-Moriya interaction in synthetic ferrimagnets

The antisymmetric interlayer exchange interaction, i.e., interlayer Dzyaloshinskii-Moriya interaction (IL-DMI) has attracted significant interest since this long-range chiral spin interaction provides a new dimension for controlling spin textures and dynamics. However, the role of IL-DMI in the field induced and spin-orbit torque (SOT) induced switching of synthetic ferrimagnets (SFi) has not been uncovered. Here, we exploit interlayer chiral exchange bias fields in SFi to address both the sign and magnitude of the IL-DMI. Depending on the degree of imbalance between the two magnetic moments of the SFi, the amount of asymmetry, addressed via loop shifts of the hysteresis loops under an in-plane field reveals a unidirectional and chiral nature of the IL-DMI. The devices are then tested with SOT switching experiments and the process is examined via both transient state and steady state detection. In addition to field-free SOT switching, we find that the combination of IL-DMI and SOT give rise to multi-resistance states, which provides a possible direction for the future design of neuromorphic computing devices based on SOT. This work is a step towards characterizing and understanding the IL-DMI for spintronic applications.

physics.app-ph↗

arXiv2024

Pressure-induced optical anisotropy of HfS$_2$

The effect of pressure on Raman scattering (RS) in the bulk HfS$_2$ is investigated under hydrostatic and non-hydrostatic conditions. The RS lineshape does not change significantly in the hydrostatic regime, showing a systematic blueshift of the spectral features. In a non-hydrostatic environment, seven peaks emerge in the spectrum ($P$=7 GPa) dominating the lineshape up to $P$=10.5 GPa. The change in the RS lineshape manifests a pressure-induced phase transition in HfS$_2$. The simultaneous observation of both low-pressure (LP) and high-pressure (HP) related RS peaks suggests the corresponding coexistence of two different phases over a large pressure range. We found that the HP-related phase is metastable, persisting during the decompression cycle down to $P$=1.2 GPa with the LP-related features finally recovering at even lower pressures. The angle-resolved polarized RS (ARPRS) performed under $P$=7.4 GPa revealed a strong in-plane anisotropy of both the LP-related A$_{1g}$ mode and the HP peaks. The anisotropy is related to the possible distortion of the structure induced by the non-hydrostatic component of the pressure. We describe the obtained results by the influence of the non-hydrostatic pressure on the observed phase transition. We interpret our results in terms of a distorted $Pnma$ phase as a possible HP induced structure of HfS$_2$.

cond-mat.mtrl-sci↗

arXiv2024

Efficient Terahertz Generation from CoPt-based Terahertz Emitters via Orbital-to-Charge Conversion

Orbitronics devices operate by manipulating orbitally-polarized currents. Recent studies have shown that these orbital currents can be excited by femtosecond laser pulses in ferromagnet as Ni and converted into ultrafast charge current via orbital-to-charge conversion. However, the terahertz emission from orbitronic terahertz emitter based on Ni is still much weaker than the typical spintronic terahertz emitter. Here, we report more efficient light-induced generation of orbital current from CoPt alloy and the orbitronic terahertz emission by CoPt/Cu/MgO shows terahertz radiation comparable to that of efficient spintronic terahertz emitters. By varying the concentration of CoPt alloy, the thickness of Cu, and the capping layer, we confirm that THz emission primarily originates from the orbital accumulation generated within CoPt, propagating through Cu and followed by the subsequent orbital-to-charge conversion from the inverse orbital Rashba-Edelstein effect at the Cu/MgO interface. This study provides strong evidence for the very efficient orbital current generation in CoPt alloy, paving the way to efficient orbital terahertz emitters.

cond-mat.mes-hall↗

arXiv2024

Extrinsic n-type semiconductor transition in ZrSe2 with the metallic character through hafnium substitution

Two dimensional layered materials exhibit versatile electronic properties in their different phases. The intrinsic electronic properties of these materials can be modulated through doping or intercalation. In this study, we investigated the electronic properties of Hf doped ZrSe2 single crystals using angle-resolved photoemission spectroscopy (ARPES) combined with first principles density functional theory (DFT) calculations. It is observed that the valence band maxima of ZrSe2, located below the Fermi level, undergo a significant change with the introduction of Hf substitution. Hf can introduce extra charges into the conduction band, rather than making a mixed structure of HfSe2 and ZrSe2 band structure, which can cross the Fermi level. Compared to the semiconducting band structure of ZrSe2, we observed that the conduction band crosses the Fermi level at the high symmetry M point in Hf-doped ZrSe2. This suggests an increase of electron type carriers around the Fermi level, resulting in an extrinsic charge carrier density in the conduction band, which can form a metallic behaviour. It can be noticed that the Hf cations can create disorder in the form of excess atoms of Zr, which yields more carriers in the conduction band in the shape of smeared bands. The tails of the smeared band occupied the d-orbitals extended into the Fermi level and left the d band below. Similarly, the electrical resistance measurements further confirm the metallic-like character of Hf doped ZrSe2 compared to the semiconductor ZrSe2, indicating increased carriers. This metallic like behavior is suggested to be predisposed by the extrinsic electrons induced by the substitutional disorder. This study further demonstrates the possibility of band gap engineering through heavy metal doping in 2D materials.

cond-mat.mtrl-sci↗

arXiv2024

Discovery of a hybrid topological quantum state in an elemental solid

Topology and interactions are foundational concepts in the modern understanding of quantum matter. Their nexus yields three significant research directions: competition between distinct interactions, as in the multiple intertwined phases, interplay between interactions and topology that drives the phenomena in twisted layered materials and topological magnets, and the coalescence of multiple topological orders to generate distinct novel phases. The first two examples have grown into major areas of research, while the last example remains mostly untouched, mainly because of the lack of a material platform for experimental studies. Here, using tunneling microscopy, photoemission spectroscopy, and theoretical analysis, we unveil a "hybrid" and yet novel topological phase of matter in the simple elemental solid arsenic. Through a unique bulk-surface-edge correspondence, we uncover that arsenic features a conjoined strong and higher-order topology, stabilizing a hybrid topological phase. While momentum-space spectroscopy measurements show signs of topological surface states, real-space microscopy measurements unravel a unique geometry of topology-induced step edge conduction channels revealed on various forms of natural nanostructures on the surface. Using theoretical models, we show that the existence of gapless step edge states in arsenic relies on the simultaneous presence of both a nontrivial strong Z2 invariant and a nontrivial higher-order topological invariant, providing experimental evidence for hybrid topology and its realization in a single crystal. Our discovery highlights pathways to explore the interplay of different kinds of band topology and harness the associated topological conduction channels in future engineered quantum or nano-devices.

cond-mat.mes-hall↗

arXiv2023

Kagomerization of transition metal monolayers induced by two-dimensional hexagonal boron nitride

The kagome lattice is an exciting solid state physics platform for the emergence of nontrivial quantum states driven by electronic correlations: topological effects, unconventional superconductivity, charge and spin density waves, and unusual magnetic states such as quantum spin liquids. While kagome lattices have been realized in complex multi-atomic bulk compounds, here we demonstrate from first-principles a process that we dub kagomerization, in which we fabricate a two-dimensional kagome lattice in monolayers of transition metals utilizing a hexagonal boron nitride (h-BN) overlayer. Surprisingly, h-BN induces a large rearrangement of the transition metal atoms supported on a fcc(111) heavy-metal surface. This reconstruction is found to be rather generic for this type of heterostructures and has a profound impact on the underlying magnetic properties, ultimately stabilizing various topological magnetic solitons such as skyrmions and bimerons. Our findings call for a reconsideration of h-BN as merely a passive capping layer, showing its potential for not only reconstructing the atomic structure of the underlying material, e.g. through the kagomerization of magnetic films, but also enabling electronic and magnetic phases that are highly sought for the next generation of device technologies.

cond-mat.mtrl-sci↗

arXiv2023

Dzyaloshinskii-Moriya interaction from unquenched orbital angular momentum

Orbitronics is an emerging and fascinating field that explores the utilization of the orbital degree of freedom of electrons for information processing. An increasing number of orbital phenomena are being currently discovered, with spin-orbit coupling mediating the interplay between orbital and spin effects, thus providing a wealth of control mechanisms and device applications. In this context, the orbital analog of spin Dzyaloshinskii-Moriya interaction (DMI), i.e. orbital DMI, deserves to be explored in depth, since it is believed to be capable of inducing chiral orbital structures. Here, we unveil the main features and microscopic mechanisms of the orbital DMI in a two-dimensional square lattice using a tight-binding model of t2g orbitals in combination with the Berry phase theory. This approach allows us to investigate and transparently disentangle the role of inversion symmetry breaking, strength of orbital exchange interaction and spin-orbit coupling in shaping the properties of the orbital DMI. By scrutinizing the band-resolved contributions we are able to understand the microscopic mechanisms and guiding principles behind the orbital DMI and its anisotropy in two dimensional magnetic materials, and uncover a fundamental relation between the orbital DMI and its spin counterpart, which is currently explored very intensively. The insights gained from our work contribute to advancing our knowledge of orbitalrelated effects and their potential applications in spintronics, providing a path for future research in the field of chiral orbitronics.

cond-mat.mtrl-sci↗

arXiv2023

Automatic Calculation of the Transition Temperatures for two-dimensional Heisenberg type Magnets

Theoretical prediction of the 2nd-order magnetic transition temperature (TM) used to be arduous. Here, we develop a first principle-based, fully automatic structure-to-TM method for two-dimensional (2D) magnets whose effective Hamiltonians follow the Heisenberg model. The Heisenberg exchanges, which can be calculated to an arbitrary shell, are transferred into the Monte Carlo calculation. Using Cr-based magnets as the showcases, we show that our method is a powerful tool to study the 2D magnets in two aspects. First, considering long-range exchanges enables us to identify the spin frustration in the suspended CrTe2 monolayer, whereas the heterostructure calculations reveal that the ferromagnetism can be recovered if the monolayer CrTe2 is grown onto various 2D substrates. Second, we realize a high-throughput screening of novel magnets discovered by random structure searches. Six 2D Cr chalcogenides are selected to have high TM. Our work provides a new insight for the study of 2D magnets and helps accelerate the pace of magnetic materials data-mining.

cond-mat.mtrl-sci↗

arXiv2023

Current manipulation of Giant tunneling altermagnetic resistance in collinear Antiferromagnetic RuO2/MgO/RuO2 sandwich structure

As an emerging non-volatile memory technology, magnetic random access memory (MRAM) has key features and advantages including non-volatility, high speed, endurance, low power consumption and radiation tolerance. Conventional MRAM utilizes magnetic tunnel junctions (MTJs), which consist of two ferromagnetic layers separated by an insulating tunnel barrier. The orientation of the magnetic layers represents the binary data (0 or 1), and electrical resistance changes depending on the relative orientation of these magnetic layers. Despite these advancements, the quest for a swifter, more stable magneto-resistive random-access memory paradigm persists. In this vein, we present a groundbreaking development: room-temperature antiferromagnetic tunnel junctions devoid of any net magnetic moment. Over 200% tunneling altermagnetic resistance (TAR) ratio was measured at RuO2 (110)/MgO/RuO2 (110)/W structure, which is achieved by changing the antiferromagnetic Neel vector of RuO2 with an ultralow current density 2 MA*cm-2.

physics.app-ph↗