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Weisheng Zhao

Publications and source records attributed to Weisheng Zhao.

At least 109 records · Page 6Linked to original sources

SparseTrain: Exploiting Dataflow Sparsity for Efficient Convolutional Neural Networks Training

Training Convolutional Neural Networks (CNNs) usually requires a large number of computational resources. In this paper, \textit{SparseTrain} is proposed to accelerate CNN training by fully exploiting the sparsity. It mainly involves three levels of innovations: activation gradients pruning algorithm, sparse training dataflow, and accelerator architecture. By applying a stochastic pruning algorithm on each layer, the sparsity of back-propagation gradients can be increased dramatically without degrading training accuracy and convergence rate. Moreover, to utilize both \textit{natural sparsity} (resulted from ReLU or Pooling layers) and \textit{artificial sparsity} (brought by pruning algorithm), a sparse-aware architecture is proposed for training acceleration. This architecture supports forward and back-propagation of CNN by adopting 1-Dimensional convolution dataflow. We have built %a simple compiler to map CNNs topology onto \textit{SparseTrain}, and a cycle-accurate architecture simulator to evaluate the performance and efficiency based on the synthesized design with $14nm$ FinFET technologies. Evaluation results on AlexNet/ResNet show that \textit{SparseTrain} could achieve about $2.7 \times$ speedup and $2.2 \times$ energy efficiency improvement on average compared with the original training process.

cs.CV↗

Field-free Deterministic Magnetization Switching Induced by Interlaced Spin-Orbit Torques

Spin-orbit torque (SOT) based magnetic random access memory (MRAM) is envisioned as an emerging non-volatile memory due to its ultra-high speed and low power consumption. The field-free switching schema in SOT devices is of great interest to both academia and industry. Here we propose a novel field-free deterministic magnetization switching in a regular magnetic tunnel junction (MTJ) by using two currents sequentially passing interlaced paths, with less requirements of manufacturing process or additional physical effects. The switching is bipolar since the final magnetization state depends on the combination of current paths. The functionality and robustness of the proposed schema is validated through both macrospin and micromagnetic simulation. The influences of field-like torque and Dzyaloshinskii-Moriya interaction (DMI) effect are further researched. Our proposed schema shows good scalability and is expected to realize novel digital logic and even computing-in-memory platform.

physics.app-ph↗

Erase-hidden and Drivability-improved Magnetic Non-Volatile Flip-Flops with NAND-SPIN Devices

Non-volatile flip-flops (NVFFs) using power gating techniques promise to overcome the soaring leakage power consumption issue with the scaling of CMOS technology. Magnetic tunnel junction (MTJ) is a good candidate for constructing the NVFF thanks to its low power, high speed, good CMOS compatibility, etc. In this paper, we propose a novel magnetic NVFF based on an emerging memory device called NAND-SPIN. The data writing of NAND-SPIN is achieved by successively applying two unidirectional currents, which respectively generate the spin orbit torque (SOT) and spin transfer torque (STT) for erase and programming operations. This characteristic allows us to design an erase-hidden and drivability-improved magnetic NVFF. Furthermore, more design flexibility could be obtained since the backup operation of the proposed NVFF is not limited by the inherent slave latch. Simulation results show that our proposed NVFF achieves performance improvement in terms of power, delay and area, compared with conventional slave-latch-driven SOT-NVFF designs.

cs.ET↗

Hardware Security in Spin-Based Computing-In-Memory: Analysis, Exploits, and Mitigation Techniques

Computing-in-memory (CIM) is proposed to alleviate the processor-memory data transfer bottleneck in traditional Von-Neumann architectures, and spintronics-based magnetic memory has demonstrated many facilitation in implementing CIM paradigm. Since hardware security has become one of the major concerns in circuit designs, this paper, for the first time, investigates spin-based computing-in-memory (SpinCIM) from a security perspective. We focus on two fundamental questions: 1) how the new SpinCIM computing paradigm can be exploited to enhance hardware security? 2) what security concerns has this new SpinCIM computing paradigm incurred?

cs.ET↗

All-optical switching of magnetic domains in Co/Gd heterostructures with Dzyaloshinskii-Moriya Interaction

Given the development of hybrid spintronic-photonic devices and chiral magnetic structures, a combined interest in all-optical switching (AOS) of magnetization and current-induced domain wall motion in synthetic ferrimagnetic structures with strong Dzyaloshinskii-Moriya Interaction (DMI) is emerging. In this study, we report a study on single-pulse all-optical toggle switching and asymmetric bubble expansion in specially engineered Co/Gd-based multilayer structures. In the absence of any external magnetic fields, we look into the AOS properties and the potential role of the DMI on the AOS process as well as the stability of optically written micro-magnetic domains. Particularly, interesting dynamics are observed in moon-shaped structures written by two successive laser pulses. The stability of domains resulting from an interplay of the dipolar interaction and domain-wall energy are compared to simple analytical models and micromagnetic simulations.

physics.app-ph↗

Efficient Computation Reduction in Bayesian Neural Networks Through Feature Decomposition and Memorization

Bayesian method is capable of capturing real world uncertainties/incompleteness and properly addressing the over-fitting issue faced by deep neural networks. In recent years, Bayesian Neural Networks (BNNs) have drawn tremendous attentions of AI researchers and proved to be successful in many applications. However, the required high computation complexity makes BNNs difficult to be deployed in computing systems with limited power budget. In this paper, an efficient BNN inference flow is proposed to reduce the computation cost then is evaluated by means of both software and hardware implementations. A feature decomposition and memorization (\texttt{DM}) strategy is utilized to reform the BNN inference flow in a reduced manner. About half of the computations could be eliminated compared to the traditional approach that has been proved by theoretical analysis and software validations. Subsequently, in order to resolve the hardware resource limitations, a memory-friendly computing framework is further deployed to reduce the memory overhead introduced by \texttt{DM} strategy. Finally, we implement our approach in Verilog and synthesise it with 45 $nm$ FreePDK technology. Hardware simulation results on multi-layer BNNs demonstrate that, when compared with the traditional BNN inference method, it provides an energy consumption reduction of 73\% and a 4$\times$ speedup at the expense of 14\% area overhead.

cs.LG↗

Enhanced all-optical switching and domain wall velocity in annealed synthetic-ferrimagnetic multilayers

All optical switching (AOS) of the magnetization in synthetic ferrimagnetic Pt/Co/Gd stacks has received considerable interest due to its high potential towards integration with spintronic devices, such as magnetic tunnel junctions (MTJs), to enable ultrafast memory applications. Post-annealing is an essential process in the MTJ fabrication to obtain optimized tunnel magnetoresistance (TMR) ratio. However, with integrating AOS with an MTJ in prospect, the annealing effects on single-pulse AOS and domain wall (DW) dynamics in the Pt/Co/Gd stacks haven't been systematically investigated yet. In this study, we experimentally explore the annealing effect on AOS and field-induced DW motion in Pt/Co/Gd stacks. The results show that the threshold fluence (F_0) for AOS is reduced significantly as a function of annealing temperature (T_a) ranging from 100C to 300C. Specifically, a 28% reduction of F_0 can be observed upon annealing at 300C, which is a critical T_a for MTJ fabrication. Lastly, we also demonstrate a significant increase of the DW velocity in the creep regime upon annealing, which is attributed to annealing-induced Co/Gd interface intermixing. Our findings show that annealed Pt/Co/Gd system facilitates ultrafast and energy-efficient AOS, as well as enhanced DW velocity, which is highly suitable towards opto-spintronic memory applications.

physics.app-ph↗

Stochastic Computing Implemented by Skyrmionic Logic Devices

Magnetic skyrmion, topologically non-trivial spin texture, has been considered as promising information carrier in future electronic devices because of its nanoscale size, low depinning current density and high motion velocity. Despite the broad interests in skyrmion racetrack memory, researchers have been recently exploiting logic functions enabled by using the particle-like behaviors of skyrmions. These functions can be applied to unconventional computing, such as stochastic computing (SC), which treats data as probabilities and is superior to binary computing due to its simplicity of logic operation. In this work, we demonstrate SC implemented by skyrmionic logic devices. We propose a skyrmionic AND-OR logic device as a multiplier in the stochastic domain and two skyrmionic multiplexer (MUX) logic devices as stochastic adders. With the assist of voltage controlled magnetic anisotropy (VCMA), the precise control of skyrmions collision is not required in the skyrmionic AND-OR logic device, thus improving the operation robustness. In the two MUX logic devices, skyrmions can be driven by Zhang-Li torque or spin orbit torque (SOT). Particularly, we can flexibly regulate the skyrmion motion by VCMA or voltage controlled Dzyaloshinskii-Moriya Interaction (VCDMI) in the SOT case. Furthermore, 3-bit stochastic multiplier and adder are demonstrated by micromagnetic simulations. In addition, simulations in synthetic antiferromagnets (SAF) show that the performance of our skyrmionic logic gates can be optimized through advanced materials. Our work opens up perspective to implement SC using skyrmionic logic devices.

physics.app-ph↗

Modulation of field-like spin orbit torque in heavy metal / ferromagnet heterostructure

Recent studies rediscovered the crucial role of field-like spin orbit torque (SOT) in nanosecond-timescale SOT dynamics. However, there is not yet an effective way to control its relative amplitude. Here, we experimentally modulate the field-like SOT in W/CoFeB/MgO trilayers through tuning the interfacial spin accumulation. By performing spin Hall magnetoresistance measurement, we find that the CoFeB with enhanced spin dephasing, either generated from larger layer thickness or from proper annealing, can distinctly boost the spin absorption and enhance the interfacial spin mixing conductance G_r. While the damping-like torque efficiency increases with G_r, the field-like torque efficiency turns out to decrease with it. The results suggest that the interfacial spin accumulation, which largely contributes to a field-like torque, is reduced by higher interfacial spin transparency. Our work shows a new path to further improve the performance of SOT-based magnetic devices.

cond-mat.mes-hall↗

Spin-torque memristors based on perpendicular magnetic tunnel junctions with a hybrid chiral texture

Spin-torque memristors were proposed in 2009, which could provide fast, low-power and infinite memristive behavior for large-density non-volatile memory and neuromorphic computing. However, the strict requirements of combining high magnetoresistance, stable intermediate states and spin-polarized current switching in a single device pose difficulties in physical implementation. Here, we experimentally demonstrate a nanoscale spin-torque memristor based on a perpendicular-anisotropy magnetic tunnel junction with a CoFeB/W/CoFeB composite free layer structure. Its tunneling magnetoresistance is higher than 200%, and memristive behavior can be realized by spin-transfer torque switching. Memristive states are maintained by robust domain wall pinning around clusters of W atoms, where nanoscale vertical chiral spin textures could be formed through the competition between opposing Dzyaloshinskii-Moriya interactions and the fluctuating interlayer coupling caused by the Ruderman-Kittel-Kasuya-Yosida interaction between the two CoFeB free layers. Spike-timing-dependent plasticity is also demonstrated in this device.

physics.app-ph↗

Thermal Brownian Motion of Skyrmion for True Random Number Generation

The true random number generators (TRNGs) have received extensive attention because of their wide applications in information transmission and encryption. The true random numbers generated by TRNG are typically applied to the encryption algorithm or security protocol of the information security core. Recently, TRNGs have also been employed in emerging stochastic computing paradigm for reducing power consumption. Roughly speaking, TRNG can be divided into circuits-based, e.g., oscillator sampling or directly noise amplifying; and quantum physics-based, e.g., photoelectric effect. The former generally requires a large area and has a large power consumption, whereas the latter is intrinsic random but is more difficult to implement and usually requires additional post-processing circuitry. Very recently, magnetic skyrmion has become a promising candidate for implementing TRNG because of their nanometer size, high stability, and intrinsic thermal Brownian motion dynamics. In this work, we propose a TRNG based on continuous skyrmion thermal Brownian motion in a confined geometry at room temperature. True random bitstream can be easily obtained by periodically detecting the relative position of the skyrmion without the need for additional current pulses. More importantly, we implement a probability-adjustable TRNG, in which a desired ratio of 0 and 1 can be acquired by adding an anisotropy gradient through voltage-controlled magnetic anisotropy (VCMA) effect. The behaviors of the skyrmion-based TRNG are verified by using micromagnetic simulations. The National Institute of Standards and Technology (NIST) test results demonstrate that our proposed random number generator is TRNG with good randomness. Our research provides a new perspective for efficient TRNG realization.

physics.app-ph↗

Skyrmion-electronics: Writing, deleting, reading and processing magnetic skyrmions toward spintronic applications

The field of magnetic skyrmions has been actively investigated across a wide range of topics during the last decades. In this topical review, we mainly review and discuss key results and findings in skyrmion research since the first experimental observation of magnetic skyrmions in 2009. We particularly focus on the theoretical, computational and experimental findings and advances that are directly relevant to the spintronic applications based on magnetic skyrmions, i.e. their writing, deleting, reading and processing driven by magnetic field, electric current and thermal energy. We then review several potential applications including information storage, logic computing gates and non-conventional devices such as neuromorphic computing devices. Finally, we discuss possible future research directions on magnetic skyrmions, which also cover rich topics on other topological textures such as antiskyrmions and bimerons in antiferromagnets and frustrated magnets.

physics.app-ph↗

Magnetic skyrmion artificial synapse for neuromorphic computing

Since the experimental discovery of magnetic skyrmions achieved one decade ago, there have been significant efforts to bring the virtual particles into all-electrical fully functional devices, inspired by their fascinating physical and topological properties suitable for future low-power electronics. Here, we experimentally demonstrate such a device: electrically-operating skyrmion-based artificial synaptic device designed for neuromorphic computing. We present that controlled current-induced creation, motion, detection and deletion of skyrmions in ferrimagnetic multilayers can be harnessed in a single device at room temperature to imitate the behaviors of biological synapses. Using simulations, we demonstrate that such skyrmion-based synapses could be used to perform neuromorphic pattern-recognition computing using handwritten recognition data set, reaching to the accuracy of ~89 percents, comparable to the software-based training accuracy of ~94 percents. Chip-level simulation then highlights the potential of skyrmion synapse compared to existing technologies. Our findings experimentally illustrate the basic concepts of skyrmion-based fully functional electronic devices while providing a new building block in the emerging field of spintronics-based bio-inspired computing.

physics.app-ph↗

Universal transfer and stacking technique of van der Waals heterostructures for spintronics

The key to achieving high-quality van der Waals heterostructure devices made from various two-dimensional (2D) materials lies in the control over clean and flexible interfaces. However, existing transfer methods based on different mediators possess insufficiencies including the presence of residues, the unavailability of flexible interface engineering, and the selectivity towards materials and substrates since their adhesions differ considerably with the various preparation conditions, from chemical vapor deposition (CVD) growth to mechanical exfoliation. In this paper, we introduce a more universal method using a prefabricated polyvinyl alcohol (PVA) film to transfer and stack 2D materials, whether they are prepared by CVD or exfoliation. This peel-off and drop-off technique promises an ideal interface of the materials without introducing contamination. In addition, the method exhibits a micron-scale spatial transfer accuracy and meets special experimental conditions such as the preparation of twisted graphene and the 2D/metal heterostructure construction. We illustrate the superiority of this method with a WSe2 vertical spin valve device, whose performance verifies the applicability and advantages of such a method for spintronics. Our PVA-assisted transfer process will promote the development of high-performance 2D-material-based devices.

physics.app-ph↗

Phase-Change Control of Interlayer Exchange Coupling

Changing the interlayer exchange coupling between magnetic layers in-situ is a key issue of spintronics, as it allows for the optimization of properties that are desirable for applications, including magnetic sensing and memory. In this paper, we utilize the phase change material VO2 as a spacer layer to regulate the interlayer exchange coupling between ferromagnetic layers with perpendicular magnetic anisotropy. The successful growth of ultra-thin (several nanometres) VO2 films is realized by sputtering at room temperature, which further enables the fabrication of [Pt/Co]2/VO2/[Co/Pt]2 multilayers with distinct interfaces. Such a magnetic multilayer exhibits an evolution from antiferromagnetic coupling to ferromagnetic coupling as the VO2 undergoes a phase change. The underlying mechanism originates from the change in the electronic structure of the spacer layer from an insulating to a metallic state. As a demonstration of phase change spintronics, this work may reveal the great potential of material innovations for next-generation spintronics.

cond-mat.mtrl-sci↗

Frequency Modulation and Voltage Locking of the Voltage Controlled Spin Oscillators (VCSOs)

The oscillating frequency of typical Spin Torque Nano Oscillators (STNOs) can be modulated by injected DC current or bias magnetic field. And phase locking of STNOs to an external Radio Frequency (RF) signal can be imposed by AC current or RF bias magnetic field. However, in this study, we have proposed a Voltage Controlled Spin Oscillators (VCSOs) by introducing Voltage Controlled Magnetic Anisotropy (VCMA) effect. The oscillating frequency of VCSOs can be modulated by VCMA voltage as well as injected DC current. Furthermore, we have shown a novel locking mechanism caused by AC VCMA voltage. Both the frequency modulation and voltage locking mechanism are analyzed theoretically by Nonlinear Auto-oscillator theory and verified by numerical simulation. At last, we proposed that by utilizing negative capacitance material to enhance VCMA effect, the locking range for voltage locking can be expanded thus may lead to easy mutual synchronization of multiple VCSOs.

cond-mat.mes-hall↗

Magnetic skyrmion spectrum under voltage excitation and its linear modulation

Magnetic skyrmions are topological quasiparticles with great potential for applications in future information storage and processing devices because of their nanoscale size, high stability, and large velocity. Recently, the high-frequency properties of skyrmions have been explored for magnon nanodevices. Here we systematically study the dynamics of an isolated skyrmion under voltage excitation through the voltage-controlled magnetic anisotropy effect in a circular thin film. A theoretical model considering the demagnetization energy, which has often been neglected or treated superficially in previous skyrmion research but is demonstrated to have importance in determining the skyrmion dynamic state, is developed. With our model, the periodic oscillation of the skyrmion radius can be solved numerically with similar precision compared to micromgnetic simulations, and the characteristic frequency of the skyrmion breathing can be determined analytically with greater precision than previous studies. Furthermore, we find that the breathing skyrmion can be analogized as a modulator by investigating its linear modulation functionality under sinusoidal-form voltage excitation. Different from the conventional modulation system with complex CMOS circuits, this skyrmion modulator device integrates with both the modulation and carrier wave generation functionality, thus showing greater convenience and efficiency in applications. Our findings can provide useful guidance for both theoretical and experimental skyrmions research as well as the development of skyrmion-based magnonic devices with significant potential applicability in future communication system.

physics.app-ph↗

Magnetization dynamics modulated by Dzyaloshinskii-Moriya interaction in the double-interface spin transfer torque magnetic tunnel junction

Currently double-interface MTJs have been developed for enhancing the thermal stability barrier in small technology node. Dzyaloshinskii-Moriya interaction (DMI) inevitably exists in such devices due to the use of the heavy-metal/ferromagnet structures. Previous studies have demonstrated the detrimental effect of DMI on the conventional single-interface spin transfer torque (STT) MTJs. Here in this work we will prove that the detrimental effect of the DMI could be almost eliminated in the double-interface STT-MTJ. This conclusion is attributed to the suppressing effect of the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction on the DMI. Detailed mechanisms are analyzed based on the theoretical models and micromagnetic simulation results. Our work highlights the importance of appropriately controlling the DMI in two free layers of the double-interface STT-MTJ.

physics.app-ph↗