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Wen-Di Li

Publications and source records attributed to Wen-Di Li.

4 recordsLinked to original sources

Generating Function of Loop Reduction by Baikov Representation

In this work, we study the computation of reduction coefficients for multi loop Feynman integrals using generating functions constructed within the Baikov representation. Compared with traditional Feynman rules, the Baikov formalism offers a more structured and transparent framework, especially well suited for analyzing the reduction problem. We emphasize that, in a variety of nontrivial cases including several one loop and selected multi loop examples the generating functions can be explicitly computed in closed form, often involving hypergeometric or elementary functions. These analytic expressions signifi cantly simplify the determination of reduction coefficients and enhance their interpretability. The results demonstrate the practicality and potential of this approach, suggesting that the use of generating functions within the Baikov representation can serve as a powerful and flexible tool in modern Feynman integral reduction, even though its full scope for generic multi-loop topologies remains to be explored.

hep-th

Hydrodynamic and Solid Mechanics Analysis of Capillary Force-Induced Mold Deformation in Sub-10 nm UV Nanoimprint Lithography

A model has been developed to study the dynamic filling process and to investigate the capillary force-induced deformation of nanostructures on the imprint mold during ultraviolet nanoimprint lithography (UV-NIL) down to sub-10 nm resolution. The dynamic behavior of resist filling with varied physical parameters was investigated by a hydrodynamic model. The capillary force-induced deformation of mold structures was modeled using beam bending mechanics for both wetting and non-wetting mold structures. Theoretically calculated results were cross-validated with finite-element simulations using two-phase flow and solid mechanics methods. Based on the theoretical analysis, a general parameter of critical aspect ratio for design of imprint mold for UV-NIL is developed. The investigation of capillary force-induced deformation in UV-NIL helps to deepen the understanding of dynamic mechanism of resist filling and structural deformation at sub-10 nm scale and enable optimization for high-fidelity UV-NIL.

physics.app-ph

Magnetic field sensitivity and decoherence spectroscopy of an ensemble of narrow-linewidth nitrogen-vacancy centers close to a diamond surface

We perform pulsed optically detected electron spin resonance to measure the DC magnetic field sensitivity and electronic spin coherence time T_2 of an ensemble of near-surface, high-density nitrogen-vacancy (NV) centers engineered to have a narrow magnetic resonance linewidth. Combining pulsed spectroscopy with dynamic nuclear polarization, we obtain the photon-shot-noise-limited DC magnetic sensitivity of 35 nT Hz^{-0.5}. We find that T_2 is controlled by instantaneous diffusion, enabling decoherence spectroscopy on residual nitrogen impurity spins in the diamond lattice and a quantitative determination of their density. The demonstrated high DC magnetic sensitivity and decoherence spectroscopy are expected to broaden the application range for two-dimensional magnetic imaging.

cond-mat.mes-hall

High density NV sensing surface created via He^(+) ion implantation of (12)^C diamond

We present a promising method for creating high-density ensembles of nitrogen-vacancy centers with narrow spin-resonances for high-sensitivity magnetic imaging. Practically, narrow spin-resonance linewidths substantially reduce the optical and RF power requirements for ensemble-based sensing. The method combines isotope purified diamond growth, in situ nitrogen doping, and helium ion implantation to realize a 100 nm-thick sensing surface. The obtained 10^(17) cm^(-3) nitrogen-vacancy density is only a factor of 10 less than the highest densities reported to date, with an observed spin resonance linewidth over 10 times more narrow. The 200 kHz linewidth is most likely limited by dipolar broadening indicating even further reduction of the linewidth is desirable and possible.

cond-mat.mes-hall