arXiv subjects

Wenkai Zhu

Publications and source records attributed to Wenkai Zhu.

16 recordsLinked to original sources

arXiv2026

Orbital Hall Effect Enables Field-Free Magnetization Reversal in Ferrimagnets without Additional Conversion Layer

The spin Hall effect provides a well-established route for electrical magnetization control, while the orbital Hall effect offers a powerful yet less explored source of angular momentum. Achieving field-free deterministic switching in straightforward orbital-torque architectures remains challenging. Here, we demonstrate orbital-Hall-current-driven switching in a Mo/CoGd bilayer without the need for a separate orbital-to-spin conversion layer across a wide temperature range. In this simplified geometry, Mo serves as both an orbital and spin current source. However, the spin contribution is insufficient due to weak spin-orbit coupling, which is consistent with first-principles calculations predicting a large orbital Hall conductivity. The adjacent ferrimagnetic CoGd layer provides both orbital-to-spin conversion and the perpendicular switching medium. Planar Hall and current-induced loop-shift measurements reveal a substantial unconventional z-polarized damping-like torque originating from interfacial symmetry breaking. Increasing the Mo thickness from 0.2 to 2 nm increases torque efficiency by approximately 31% (y-polarized) and 71% (z-polarized) components. This enhancement enables field-free deterministic switching with a critical current density down to 2.51 x 10^6 A cm^-2. Our results establish Mo/CoGd bilayers as a compact platform for orbital-current switching and point toward low-power orbitronic memory devices.

cond-mat.mtrl-sci↗

arXiv2026

Orbital Hall Effect Enables Field-Free Magnetization Reversal in Ferrimagnets without Additional Conversion Layer

The spin Hall effect (SHE) enables efficient electrical manipulation of magnetization through the spin Hall current \left(\mathbit{J}_{\mathbit{SHE}}\right), advancing energy-efficient spintronics. In parallel, the orbital Hall effect (OHE) offers an alternative pathway to SHE for converting charge current into an angular momentum flow. In this study, we demonstrate field-free current-induced perpendicular ferrimagnetic deterministic switching within a Mo/CoGd device without an additional orbital-to-spin conversion layer. This is achieved by harnessing localized orbital Hall currents \left(\mathbit{J}_{\mathbit{OHE}}\right) generated in the Mo layer. The in-plane symmetry breaking at the Mo/CoGd surface-interface layer, validated by a pronounced planar Hall effect, gives rise to a substantial unconventional z-polarized damping-like torque. The CoGd serves a dual role: not only as a converter that transforms the significant \mathbit{J}_{\mathbit{OHE}} into \mathbit{J}_{\mathbit{SHE}} but also as a ferrimagnetic self-switching mechanism. This dual functionality enables highly efficient field-free current-induced magnetization switching with a critical current density as low as \mathbf{2}.\mathbf{51}\ \times{\mathbf{10}}^\mathbf{6} A cm-2. Our work highlights the potential of orbital Hall currents for energy-efficient magnetization switching, making a notable contribution to the burgeoning field of orbitronics.

cond-mat.mtrl-sci↗

arXiv2026

ParkingTransformer: LLM-Enhanced End-to-End Trajectory Planning for Autonomous Parking

End-to-end autonomous parking has emerged as a critical task within the realm of autonomous driving. However, existing methods suffer from black-box characteristics, lacking high-level semantic understanding and interpretability, which impedes the realization of seamless long-distance autonomous parking from the road to the target spot. To address these limitations, we propose ParkingTransformer, a novel framework that leverages multi-view perception and the scene understanding capability of Large Language Models (LLMs). By combining trajectory queries with LLMs implicit state features, our method interacts directly with historical information and raw sensor data to output planning trajectories, eliminating the need for dense Bird's-View (BEV) representations. To compensate for the inadequate spatial reasoning ability of LLMs, we introduce 3D positional encoding to explicitly inject spatial geometric awareness. Furthermore, a fixed-window streaming mechanism is designed for historical information processing, significantly improving long-term temporal processing efficiency and inference speed. Additionally, a coarse-to-fine decoding strategy is employed to progressively enhance trajectory precision. Extensive closed-loop experiments are conducted on the CARLA simulator and real-world vehicle platforms. The results demonstrate that our method achieves a driving score of 61.32 in CARLA simulator and an average success rate of 88.70% in real-world experiments, validating the feasibility and effectiveness of the proposed algorithms.

cs.RO↗

arXiv2026

Domain-Adaptive Model Merging Across Disconnected Modes

Learning across domains is challenging when data cannot be centralized due to privacy or heterogeneity, which limits the ability to train a single comprehensive model. Model merging provides an appealing alternative by consolidating knowledge from multiple specialized models into one, avoiding data sharing and reducing retraining cost. In this work, we present DMM, a data-free model merging framework designed to handle highly divergent models. DMM proceeds in three steps. First, domain-specific models are trained independently. Second, models with high similarity are merged using standard techniques to ensure stability. Third, we synthesize pseudo-data from normalization statistics and distill knowledge from divergent models into the merged model through a lightweight refinement guided by these samples. This approach preserves rare but critical knowledge while maintaining stability. Extensive experiments on unimodal and multimodal benchmarks show that DMM achieves state-of-the-art performance over existing merging methods.

cs.DC↗

arXiv2026

MPTF-Net: Multi-view Pyramid Transformer Fusion Network for LiDAR-based Place Recognition

LiDAR-based place recognition (LPR) is essential for global localization and loop-closure detection in large-scale SLAM systems. Existing methods typically construct global descriptors from Range Images or BEV representations for matching. BEV is widely adopted due to its explicit 2D spatial layout encoding and efficient retrieval. However, conventional BEV representations rely on simple statistical aggregation, which fails to capture fine-grained geometric structures, leading to performance degradation in complex or repetitive environments. To address this, we propose MPTF-Net, a novel multi-view multi-scale pyramid Transformer fusion network. Our core contribution is a multi-channel NDT-based BEV encoding that explicitly models local geometric complexity and intensity distributions via Normal Distribution Transform, providing a noise-resilient structural prior. To effectively integrate these features, we develop a customized pyramid Transformer module that captures cross-view interactive correlations between Range Image Views (RIV) and NDT-BEV at multiple spatial scales. Extensive experiments on the nuScenes, KITTI and NCLT datasets demonstrate that MPTF-Net achieves state-of-the-art performance, specifically attaining a Recall@1 of 96.31\% on the nuScenes Boston split while maintaining an inference latency of only 10.02 ms, making it highly suitable for real-time autonomous unmanned systems.

cs.CV↗

arXiv2026

Wild-Drive: Off-Road Scene Captioning and Path Planning via Robust Multi-modal Routing and Efficient Large Language Model

Explainability and transparent decision-making are essential for the safe deployment of autonomous driving systems. Scene captioning summarizes environmental conditions and risk factors in natural language, improving transparency, safety, and human--robot interaction. However, most existing approaches target structured urban scenarios; in off-road environments, they are vulnerable to single-modality degradations caused by rain, fog, snow, and darkness, and they lack a unified framework that jointly models structured scene captioning and path planning. To bridge this gap, we propose Wild-Drive, an efficient framework for off-road scene captioning and path planning. Wild-Drive adopts modern multimodal encoders and introduces a task-conditioned modality-routing bridge, MoRo-Former, to adaptively aggregate reliable information under degraded sensing. It then integrates an efficient large language model (LLM), together with a planning token and a gate recurrent unit (GRU) decoder, to generate structured captions and predict future trajectories. We also build the OR-C2P Benchmark, which covers structured off-road scene captioning and path planning under diverse sensor corruption conditions. Experiments on OR-C2P dataset and a self-collected dataset show that Wild-Drive outperforms prior LLM-based methods and remains more stable under degraded sensing. The code and benchmark will be publicly available at https://github.com/wangzihanggg/Wild-Drive.

cs.RO↗

arXiv2026

Probing quantum geometric nonlinear magnetization via second-harmonic magneto-optical Kerr effect

Quantum geometry provides an intrinsic framework for characterizing the geometric structure of quantum states. It highlights its relevance to various aspects of fundamental physics. However, its direct implications for magnetic phenomena remain largely unexplored. Here, we report the observation of electric-field-induced nonlinear magnetization in the nonmagnetic semimetal WTe$_2$ by using a second-harmonic magneto-optical Kerr effect (SMOKE) spectroscopy. We observe a robust nonlinear SMOKE signal that scales quadratically with current and persists up to 200 K. Theoretical modeling and scaling analysis indicate that this nonlinear magnetization is dominated by the orbital contribution and is intrinsically linked to the quantum Christoffel symbol. Just as the Christoffel symbol is a fundamental quantity encoding spacetime geometry in Einstein's general relativity, our work establishes a direct link between quantum geometry and nonlinear magnetization, and provides a geometric perspective for designing future orbitronic devices.

cond-mat.mes-hall↗

arXiv2025

LVD-GS: Gaussian Splatting SLAM for Dynamic Scenes via Hierarchical Explicit-Implicit Representation Collaboration Rendering

3D Gaussian Splatting SLAM has emerged as a widely used technique for high-fidelity mapping in spatial intelligence. However, existing methods often rely on a single representation scheme, which limits their performance in large-scale dynamic outdoor scenes and leads to cumulative pose errors and scale ambiguity. To address these challenges, we propose \textbf{LVD-GS}, a novel LiDAR-Visual 3D Gaussian Splatting SLAM system. Motivated by the human chain-of-thought process for information seeking, we introduce a hierarchical collaborative representation module that facilitates mutual reinforcement for mapping optimization, effectively mitigating scale drift and enhancing reconstruction robustness. Furthermore, to effectively eliminate the influence of dynamic objects, we propose a joint dynamic modeling module that generates fine-grained dynamic masks by fusing open-world segmentation with implicit residual constraints, guided by uncertainty estimates from DINO-Depth features. Extensive evaluations on KITTI, nuScenes, and self-collected datasets demonstrate that our approach achieves state-of-the-art performance compared to existing methods.

cs.CV↗

arXiv2025

Two-dimensional magnetic tunnel p-n junctions for low-power electronics

For decades, semiconductors and their heterostructures have underpinned both fundamental and applied research across all areas of electronics. Two-dimensional, 2D (atomically thin) semiconductors have now the potential to push further the miniaturization of electronic components, enabling the development of more efficient electronics. Here, we report on a giant anomalous zero-bias spin voltage in magnetic tunnel junctions based on 2D materials. The generation, manipulation and detection of electron spin across a nanometer-thick magnetic tunnel junction do not require any applied bias. It is achieved by exploiting high-quality ferromagnetic/semiconductor interfaces and the asymmetric diffusion of spin-up/spin-down electrons across a semiconductor p-n junction. The large spin-voltage signal exceeds 30,000% and is far greater than the highest magnetoresistance signals reported to date. Our findings reveal unexplored opportunities to transform and amplify spin information for low-power electronics.

cond-mat.mes-hall↗

arXiv2025

Unconventional bias-dependent tunneling magnetoresistance in van der Waals ferromagnetic/semiconductor heterojunctions

Two-dimensional van der Waals (vdW) ferromagnetic/semiconductor heterojunctions represent an ideal platform for studying and exploiting tunneling magnetoresistance (TMR) effects due to the versatile band structure of semiconductors and their high-quality interfaces. In the all-vdW magnetic tunnel junction (MTJ) devices, both the magnitude and sign of the TMR can be tuned by an applied voltage. Typically, as the bias voltage increases, first the amplitude of the TMR decreases, then the sign of the TMR reverses and/or oscillates. Here, we report on an unconventional bias-dependent TMR in the all-vdW Fe3GaTe2/GaSe/Fe3GaTe2 MTJs, where the TMR first increases, then decreases, and finally undergoes a sign reversal as the bias voltage increases. This dependence cannot be explained by traditional models of MTJs. We propose an in-plane electron momentum (k//) resolved tunneling model that considers both the coherent degree of k// and the decay of the electron wave function through the semiconductor spacer layer. This can explain well the conventional and unconventional bias-dependent TMR. Our results thus provide a deeper understanding of the bias-dependent spin-transport in semiconductor-based MTJs and offer new insights into semiconductor spintronics.

cond-mat.mtrl-sci↗

arXiv2024

Voltage tunable sign inversion of magnetoresistance in van der Waals Fe3GeTe2/MoSe2/Fe3GeTe2 tunnel junctions

The magnetic tunnel junctions (MTJ) based on van der Waals (vdW) materials possess atomically smooth interfaces with minimal element intermixing. This characteristic ensures that spin polarization is well maintained during transport, leading to the emergence of richer magnetoresistance behaviors. Here, using all 2D vdW MTJs based on magnetic metal Fe3GeTe2 and non-magnetic semiconductor MoSe2, we demonstrate that the magnitude and even sign of the magnetoresistance can be tuned by the applied voltage. The sign inversion of the magnetoresistance is observed in a wide temperature range below the Curie temperature. This tunable magnetoresistance sign may be attributed to the spin polarizations of the tunneling carriers and the band structure of the two ferromagnetic electrodes. Such robust electrical tunability of magnetoresistance extends the functionalities of low-dimensional spintronics and makes it more appealing for next-generation spintronics with all-vdW MTJs.

physics.app-ph↗

arXiv2023

Room-temperature van der Waals 2D ferromagnet switching by spin-orbit torques

Emerging wide varieties of the two-dimensional (2D) van der Waals (vdW) magnets with atomically thin and smooth interfaces holds great promise for next-generation spintronic devices. However, due to the lower Curie temperature of the vdW 2D ferromagnets than room temperature, electrically manipulating its magnetization at room temperature has not been realized. In this work, we demonstrate the perpendicular magnetization of 2D vdW ferromagnet Fe3GaTe2 can be effectively switched at room temperature in Fe3GaTe2/Pt bilayer by spin-orbit torques (SOTs) with a relatively low current density of 1.3 10^7A/cm2. Moreover, the high SOT efficiency of ξ_{DL}~0.22 is quantitatively determined by harmonic measurements, which is higher than those in Pt-based heavy metal/conventional ferromagnet devices. Our findings of room-temperature vdW 2D ferromagnet switching by SOTs provide a significant basis for the development of vdW-ferromagnet-based spintronic applications.

physics.app-ph↗

arXiv2023

Large and tunable magnetoresistance in van der Waals Ferromagnet/Semiconductor junctions

Magnetic tunnel junctions (MTJs) with conventional bulk ferromagnets separated by a nonmagnetic insulating layer are key building blocks in spintronics for magnetic sensors and memory. A radically different approach of using atomically-thin van der Waals (vdW) materials in MTJs is expected to boost their figure of merit, the tunneling magnetoresistance (TMR), while relaxing the lattice-matching requirements from the epitaxial growth and supporting high-quality integration of dissimilar materials with atomically-sharp interfaces. We report TMR up to 192% at 10 K in all-vdW Fe3GeTe2/GaSe/Fe3GeTe2 MTJs. Remarkably, instead of the usual insulating spacer, this large TMR is realized with a vdW semiconductor GaSe. Integration of two-dimensional ferromagnets in semiconductor-based vdW junctions offers gate-tunability, bias dependence, magnetic proximity effects, and spin-dependent optical-selection rules. We demonstrate that not just the magnitude, but also the TMR sign is tuned by the applied bias or the semiconductor thickness, enabling modulation of highly spin-polarized carriers in vdW semiconductors.

cond-mat.mtrl-sci↗

arXiv2022

Selectively controlled ferromagnets by electric fields in van der Waals ferromagnetic heterojunctions

Charge transfer plays a key role at the interfaces of heterostructures, which can affect electronic structures and ultimately the physical properties of the materials. However, charge transfer is difficult to manipulate externally once the interface formed. Here, we report electrically tunable charge transfer in Fe3GeTe2/Cr2Ge2Te6/Fe3GeTe2 all-magnetic van der Waals heterostructures, which can be exploited to selectively modify the magnetic properties of the top or bottom Fe3GeTe2 electrodes. The directional charge transfer from metallic Fe3GeTe2 to semiconducting Cr2Ge2Te6 remarkably modifies magnetic anisotropy energy of Fe3GeTe2, leading to the dramatically suppressed coercivity. The electrically selective control of ferromagnets demonstrated in this study could stimulate the development of spintronic devices based on van der Waals magnets.

cond-mat.mtrl-sci↗

arXiv2020

Interlayer band-to-band tunneling and negative differential resistance in van der Waals BP/InSe field effect transistors

Atomically thin layers of van der Waals (vdW) crystals offer an ideal material platform to realize tunnel field effect transistors (TFETs) that exploit the tunneling of charge carriers across the forbidden gap of a vdW heterojunction. This type of device requires a precise energy band alignment of the different layers of the junction to optimize the tunnel current. Amongst two-dimensional (2D) vdW materials, black phosphorus (BP) and indium selenide (InSe) have a Brillouin zone-centered conduction and valence bands, and a type II band offset, both ideally suited for band-to-band tunneling. Here, we demonstrate TFETs based on BP/InSe heterojunctions with diverse electrical transport characteristics: forward rectifying, Zener-tunneling and backward rectifying characteristics are realized in BP/InSe junctions with different thickness of the BP layer or by electrostatic gating of the junction. Electrostatic gating yields a large on/off current ratio of up to 108 and negative differential resistance at low applied voltages (V ~ 0.2V). These findings illustrate versatile functionalities of TFETs based on BP and InSe, offering opportunities for applications of these 2D materials beyond the device architectures reported in the current literature.

physics.app-ph↗

arXiv2019

Enhanced photoresponse in MoTe2 photodetectors with asymmetric graphene contacts

Atomically thin two dimensional (2D) materials are promising candidates for miniaturized high-performance optoelectronic devices. Here, we report on multilayer MoTe2 photodetectors contacted with asymmetric electrodes based on n- and p-type graphene layers. The asymmetry in the graphene contacts creates a large (Ebi ~100 kV cm-1) built-in electric field across the short (l = 15 nm) MoTe2 channel, causing a high and broad (400 to 1400 nm) photoresponse even without any externally applied voltage. Spatially resolved photovoltage maps reveal an enhanced photoresponse and larger built-in electric field in regions of the MoTe2 layer between the two graphene contacts. Furthermore, a fast (~0.01 ms) photoresponse is achieved in both the photovoltaic and photoconductive operation modes of the junction. Our findings could be extended to other 2D materials and offer prospects for the implementation of asymmetric graphene contacts in future low-power optoelectronic applications.

physics.app-ph↗