arXiv subjects

Wenzhong Bao

Publications and source records attributed to Wenzhong Bao.

At least 19 recordsLinked to original sources

arXiv2025

Quantized Topological States and Parity Anomaly in Intrinsic Quantum Anomalous Hall Insulator MnBi2Te4

When thinned down to just a few atomic layers, the layered magnetic topological insulator MnBi2Te4 offers an exceptional platform for exploring a wide range of topological phenomena. In this work, we overcome longstanding challenges in synthesizing high-purity MnBi2Te4 crystals and report the observation of a myriad of quantized topological states in high-quality five-septuple-layer (5-SL) samples under magnetic fields up to 45 Tesla. We show that the nontrivial topology of 5-SL MnBi2Te4, in the presence of Landau quantization, is governed by a generalized topological index rooted in the parity anomaly of Dirac fermions in (2+1) dimensions. The anomaly manifests as an anomalous Landau level, giving rise to gate-tunable helical edge transport. Our results establish high-quality MnBi2Te4 as a robust platform for exploring emergent topological states and for advancing novel quantum device applications.

cond-mat.mes-hall↗

arXiv2025

Event Vision Sensor: A Review

By monitoring temporal contrast, event-based vision sensors can provide high temporal resolution and low latency while maintaining low power consumption and simplicity in circuit structure. These characteristics have garnered significant attention in both academia and industry. In recent years, the application of back-illuminated (BSI) technology, wafer stacking techniques, and industrial interfaces has brought new opportunities for enhancing the performance of event-based vision sensors. This is evident in the substantial advancements made in reducing noise, improving resolution, and increasing readout rates. Additionally, the integration of these technologies has enhanced the compatibility of event-based vision sensors with current and edge vision systems, providing greater possibilities for their practical applications. This paper will review the progression from neuromorphic engineering to state-of-the-art event-based vision sensor technologies, including their development trends, operating principles, and key features. Moreover, we will delve into the sensitivity of event-based vision sensors and the opportunities and challenges they face in the realm of infrared imaging, providing references for future research and applications.

physics.ins-det↗

arXiv2019

High-Performance Logic and Memory Devices Based on a Dual-Gated MoS2 Architecture

In this work, we demonstrate a dual-gated (DG) MoS2 field effect transistors (FETs) in which the degraded switching performance of multilayer MoS2 can be compensated by the DG structure. It produces large current density (>100 μA/μm for a monolayer), steep subthreshold swing (SS) (~100 mV/dec for 5 nm thickness), and high on/off current ratio (greater than 107 for 10 nm thickness). Such DG structure not only improves electrostatic control but also provides an extra degree of freedom for manipulating the threshold voltage (VTH) and SS by separately tuning the top and back gate voltages, which are demonstrated in a logic inverter. Dynamic random access memory (DRAM) has a short retention time because of large OFF-state current in the Si MOSFET. Based on our DG MoS2-FETs, and a DRAM unit cell with a long retention time of 1260 ms are realized. A large-scale isolated MoS2 DG-FETs based on CVD-synthesized continuous films is also demonstrated, which shows potential applications for future wafer-scale digital and low-power electronics.

physics.app-ph↗

arXiv2019

A Dual-gate MoS2 Photodetector Based on Interface Coupling Effect

Two-dimensional (2D) transition metal dichalcogenides (TMDs) based photodetectors have shown great potential for the next generation optoelectronics. However, most of the reported MoS2 photodetectors function under the photogating effect originated from the charge-trap mechanism, which is difficult for quantitative control. Such devices generally suffer from a poor compromise between response speed and responsivity (R) and large dark current. Here, a dual-gated (DG) MoS2 phototransistor operating based on the interface coupling effect (ICE) is demonstrated. By simultaneously applying a negative top-gate voltage (VTG) and positive back-gate voltage (VBG) to the MoS2 channel, the photo-generated holes can be effectively trapped in the depleted region under TG. An ultrahigh R of ~1E5 A/W and detectivity (D*) of ~1E14 Jones have been achieved in several devices with different thickness under Pin of 53 uW/cm2 at VTG=-5 V. Moreover, the response time of the DG phototransistor can also be modulated based on the ICE. Based on these systematic measurements of MoS2 DG phototransistors, the results show that the ICE plays an important role in the modulation of photoelectric performances. Our results also pave the way for the future optoelectrical application of 2D TMDs materials and prompt for further investigation in the DG structured phototransistors.

physics.app-ph↗

arXiv2019

MoS$_2$ Dual-gate Transistors with Electrostatically Doped Contacts

Two-dimensional (2D) transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) have been intensively investigated because of their exclusive physical properties for advanced electronics and optoelectronics. In the present work, we study the MoS2 transistor based on a novel tri-gate device architecture, with dual-gate (Dual-G) in the channel and the buried side-gate (Side-G) for the source/drain regions. All gates can be independently controlled without interference. For a MoS2 sheet with a thickness of 3.6 nm, the Schottky barrier (SB) and non-overlapped channel region can be effectively tuned by electrostatically doping the source/drain regions with Side-G. Thus, the extrinsic resistance can be effectively lowered, and a boost of the ON-state current can be achieved. Meanwhile, the channel control remains efficient under the Dual-G mode, with an ON-OFF current ratio of 3E7 and subthreshold swing of 83 mV/decade. The corresponding band diagram is also discussed to illustrate the device operation mechanism. This novel device structure opens up a new way toward fabrication of high-performance devices based on 2D-TMDs.

physics.app-ph↗

arXiv2018

Breaking Pauli blockade via ultrafast cooling of hot electrons in optically-pumped graphene

Pauli blockade occurs when the excited electrons fill up the states near the conduction bands and block subsequent absorption in semiconductors, and has been widely applied in mode-locking for passively-pulsed-laser systems. In this letter, we report the first direct observation that the Pauli blockade is broken by ultrafast cooling of hot electrons in optically-pumped graphene. With femtosecond spectroscopy, we demonstrate that the time scale to excite an electron (~100 fs) is of the same order as that of the electron decay via electron-electron scattering, which allows the electron excitation interplays strongly with the cooling of hot electrons. Consequently, Pauli blockade is dismissed, leading to an unconventionally enhanced optical absorption. We suggest that this effect is a universal feature of two-dimensional layered materials, which sheds the light of ultrafast carrier dynamics in nonlinear physics and inspires the designing of new-generation of ultrafast optoelectronic devices.

physics.optics↗

arXiv2015

The positive piezoconductive effect in graphene

As the thinnest conductive and elastic material, graphene is expected to play a crucial role in post-Moore era. Besides applications on electronic devices, graphene has shown great potential for nano-electromechanical systems. While interlayer interactions play a key role in modifying the electronic structures of layered materials, no attention has been given to their impact on electromechanical properties. Here we report the positive piezoconductive effect observed in suspended bi- and multi-layer graphene. The effect is highly layer number dependent and shows the most pronounced response for tri-layer graphene. The effect, and its dependence on the layer number, can be understood as resulting from the strain-induced competition between interlayer coupling and intralayer transport, as confirmed by the numerical calculations based on the non-equilibrium Green's function method. Our results enrich the understanding of graphene and point to layer number as a powerful tool for tuning the electromechanical properties of graphene for future applications.

cond-mat.mes-hall↗

arXiv2015

Electronic transport properties of Ir-decorated graphene

Graphene decorated with 5d transitional metal atoms is predicted to exhibit many intriguing properties; for example iridium adatoms are proposed to induce a substantial topological gap in graphene. We extensively investigated the conductivity of single-layer graphene decorated with iridium deposited in ultra-high vacuum at low temperature (7 K) as a function of Ir concentration, carrier density, temperature, and annealing conditions. Our results are consistent with the formation of Ir clusters of ~100 atoms at low temperature, with each cluster donating a single electronic charge to graphene. Annealing graphene increases the cluster size, reducing the doping and increasing the mobility. We do not observe any sign of an energy gap induced by spin-orbit coupling, possibly due to the clustering of Ir.

cond-mat.mes-hall↗

arXiv2014

Approaching the Limits of Transparency and Conductivity in Graphitic Materials through Lithium Intercalation

Various bandstructure engineering methods have been studied to improve the performance of graphitic transparent conductors; however none demonstrated an increase of optical transmittance in the visible range. Here we measure in situ optical transmittance spectra and electrical transport properties of ultrathin-graphite (3-60 graphene layers) simultaneously via electrochemical lithiation/delithiation. Upon intercalation we observe an increase of both optical transmittance (up to twofold) and electrical conductivity (up to two orders of magnitude), strikingly different from other materials. Transmission as high as 91.7% with a sheet resistance of 3.0 Ω per square is achieved for 19-layer LiC6, which corresponds to a figure of merit σ_dc/σ_opt = 1400, significantly higher than any other continuous transparent electrodes. The unconventional modification of ultrathin-graphite optoelectronic properties is explained by the suppression of interband optical transitions and a small intraband Drude conductivity near the interband edge. Our techniques enable the investigation of other aspects of intercalation in nanostructures.

cond-mat.mtrl-sci↗

arXiv2014

Ultrafast and Nanoscale Plasmonic Phenomena in Exfoliated Graphene Revealed by Infrared Pump-Probe Nanoscopy

Pump-probe spectroscopy is central for exploring ultrafast dynamics of fundamental excitations, collective modes and energy transfer processes. Typically carried out using conventional diffraction-limited optics, pump-probe experiments inherently average over local chemical, compositional, and electronic inhomogeneities. Here we circumvent this deficiency and introduce pump-probe infrared spectroscopy with ~20 nm spatial resolution, far below the diffraction limit, which is accomplished using a scattering scanning near-field optical microscope (s-SNOM). This technique allows us to investigate exfoliated graphene single-layers on SiO2 at technologically significant mid-infrared (MIR) frequencies where the local optical conductivity becomes experimentally accessible through the excitation of surface plasmons via the s-SNOM tip. Optical pumping at near-infrared (NIR) frequencies prompts distinct changes in the plasmonic behavior on 200 femtosecond (fs) time scales. The origin of the pump-induced, enhanced plasmonic response is identified as an increase in the effective electron temperature up to several thousand Kelvin, as deduced directly from the Drude weight associated with the plasmonic resonances.

cond-mat.mes-hall↗

arXiv2013

Transport in Suspended Monolayer and Bilayer Graphene Under Strain: A New Platform for Material Studies

We develop two types of graphene devices based on nanoelectromechanical systems (NEMS), that allows transport measurement in the presence of in situ strain modulation. Different mobility and conductance responses to strain were observed for single layer and bilayer samples. These types of devices can be extended to other 2D membranes such as MoS2, providing transport, optical or other measurements with in situ strain.

cond-mat.mtrl-sci↗

arXiv2012

High Mobility Ambipolar MoS2 Field-Effect Transistors: Substrate and Dielectric Effects

We fabricate MoS2 field effect transistors on both SiO2 and polymethyl methacrylate (PMMA) dielectrics and measure charge carrier mobility in a four-probe configuration. For multilayer MoS2 on SiO2, the mobility is 30-60 cm2/Vs, relatively independent of thickness (15-90 nm), and most devices exhibit unipolar n-type behavior. In contrast, multilayer MoS2 on PMMA shows mobility increasing with thickness, up to 470 cm2/Vs (electrons) and 480 cm2/Vs (holes) at thickness ~50 nm. The dependence of the mobility on thickness points to a long-range dielectric effect of the bulk MoS2 in increasing mobility.

cond-mat.mes-hall↗

arXiv2012

Broken Symmetry Quantum Hall States in Dual Gated ABA Trilayer Graphene

We present low temperature transport measurements on dual-gated suspended trilayer graphene in the quantum Hall (QH) regime. We observe QH plateaus at filling factors ν=-8, -2, 2, 6, and 10, in agreement with the full-parameter tight binding calculations. In high magnetic fields, odd-integer plateaus are also resolved, indicating almost complete lifting of the 12-fold degeneracy of the lowest Landau levels (LL). Under an out-of-plane electric field E, we observe degeneracy breaking and transitions between QH plateaus. Interestingly, depending on its direction, E selectively breaks the LL degeneracies in the electron-doped or hole-doped regimes. Our results underscore the rich interaction-induced phenomena in trilayer graphene.

cond-mat.mes-hall↗

arXiv2012

Visualizing Electrical Breakdown and ON/OFF States in Electrically Switchable Suspended Graphene Break Junctions

Narrow gaps are formed in suspended single to few layer graphene devices using a pulsed electrical breakdown technique. The conductance of the resulting devices can be programmed by the application of voltage pulses, with a voltage of 2.5V~4.5V corresponding to an ON pulse and voltages ~8V corresponding to OFF pulses. Electron microscope imaging of the devices shows that the graphene sheets typically remain suspended and that the device conductance tends to zero when the observed gap is large. The switching rate is strongly temperature dependent, which rules out a purely electromechanical switching mechanism. This observed switching in suspended graphene devices strongly suggests a switching mechanism via atomic movement and/or chemical rearrangement, and underscores the potential of all-carbon devices for integration with graphene electronics.

cond-mat.mes-hall↗

arXiv2012

Minimum Conductivity and Evidence for Phase Transitions in Ultra-clean Bilayer Graphene

Bilayer graphene (BLG) at the charge neutrality point (CNP) is strongly susceptible to electronic interactions, and expected to undergo a phase transition into a state with spontaneous broken symmetries. By systematically investigating a large number of singly- and doubly-gated bilayer graphene (BLG) devices, we show that an insulating state appears only in devices with high mobility and low extrinsic doping. This insulating state has an associated transition temperature Tc~5K and an energy gap of ~3 meV, thus strongly suggesting a gapped broken symmetry state that is destroyed by very weak disorder. The transition to the intrinsic broken symmetry state can be tuned by disorder, out-of-plane electric field, or carrier density.

cond-mat.mes-hall↗

arXiv2012

Aryl Functionalization as a Route to Band Gap Engineering in Single Layer Graphene Devices

Chemical functionalization is a promising route to band gap engineering of graphene. We chemically grafted nitrophenyl groups onto exfoliated single-layer graphene sheets in the form of substrate-supported or free-standing films. Our transport measurements demonstrate that non-suspended functionalized graphene behaves as a granular metal, with variable range hopping transport and a mobility gap ~ 0.1 eV at low temperature. For suspended graphene that allows functionalization on both surfaces, we demonstrate tuning of its electronic properties from a granular metal to a gapped semiconductor, in which charge transport occurs via thermal activation over a gap ~ 80 meV. This non-invasive and scalable functionalization technique paves the way for CMOS-compatible band gap engineering of graphene electronic devices.

cond-mat.mes-hall↗

arXiv2011

Infrared nanoscopy of Dirac plasmons at the graphene-SiO2 interface

We report on infrared (IR) nanoscopy of 2D plasmon excitations of Dirac fermions in graphene. This is achieved by confining mid-IR radiation at the apex of a nanoscale tip: an approach yielding two orders of magnitude increase in the value of in-plane component of incident wavevector q compared to free space propagation. At these high wavevectors, the Dirac plasmon is found to dramatically enhance the near-field interaction with mid-IR surface phonons of SiO2 substrate. Our data augmented by detailed modeling establish graphene as a new medium supporting plasmonic effects that can be controlled by gate voltage.

cond-mat.mes-hall↗

arXiv2011

Wrinkling hierarchy in constrained thin sheets from suspended graphene to curtains

We show that thin sheets under boundary confinement spontaneously generate a universal self-similar hierarchy of wrinkles. From simple geometry arguments and energy scalings, we develop a formalism based on wrinklons, the transition zone in the merging of two wrinkles, as building-blocks of the global pattern. Contrary to the case of crumple paper where elastic energy is focused, this transition is described as smooth in agreement with a recent numerical work. This formalism is validated from hundreds of nm for graphene sheets to meters for ordinary curtains, which shows the universality of our description. We finally describe the effect of an external tension to the distribution of the wrinkles.

cond-mat.mtrl-sci↗