arXiv subjects

Wojciech Knap

Publications and source records attributed to Wojciech Knap.

At least 19 recordsLinked to original sources

arXiv2026

Delayed Formation of Landau Polaritons in Phase-Resolved THz Spectroscopy

Strong light-matter coupling gives rise to polaritons through coherent and periodic energy exchange between electromagnetic cavity fields and material excitations. While this interaction is typically inferred from spectral mode splitting, its dynamics remain largely unexplored. Here, using phase-resolved terahertz time-domain spectroscopy, we observe Rabi oscillations of Landau polaritons formed by coupling the cyclotron resonance in a GaAs/Al$_{0.36}$Ga$_{0.64}$As two-dimensional electron gas with Fabry-Perot cavity modes. By employing cross-polarized spectroscopy and magnetic-field differential, we resolve the temporal beating of the cyclotron resonance oscillations. Remarkably, we find that the Rabi oscillations do not start immediately after excitation of the cyclotron resonance, but after a delay corresponding to one cavity round-trip time. This demonstrates that the strong-coupling regime sets up only after the formation of the cavity mode field. Our results provide direct insight into the dynamics of hybrid light-matter states in the THz regime.

cond-mat.mes-hall↗

arXiv2026

Deep Strong light-matter Coupling in 3D Kane Fermions

Deep strong light-matter coupling represents an extreme non-perturbative regime of quantum electrodynamics, in which the interaction strength exceeds the bare frequencies of the uncoupled systems. The ground state features strong quantum correlations between photons and matter excitations, and new cavity-driven phase transitions are expected to occur. Whether a superradiant quantum phase transition, marked by spontaneous dipole ordering and photon condensation, is possible has remained a long-standing and controversial question. Such phenomena have been proposed to arise in exotic electronic systems hosting Dirac and Kane fermions, owing to the formal absence of an $A^2$ term in their low-energy Hamiltonian. Here we exploit the ultralow effective mass of Kane fermions to realise Landau polaritons in a bulk mercury cadmium telluride layer coupled to a Fabry-Perot resonator. Using thermally tunable carrier density, we continuously tune the coupling from the weak to the deep-strong regime, achieving a record normalised coupling ratio exceeding 1.6 above room temperature. The measured polariton spectra are in excellent agreement with a rigorous, gauge-invariant microscopic theory. Despite the nonlinear Landau level structure of relativistic Kane fermions, we show that a diamagnetic $A^2$ term naturally emerges and precludes a superradiant phase transition. These results resolve the long-standing controversy surrounding cavity quantum electrodynamics of relativistic-like matter systems, extend deep-strong-coupling physics to Kane fermions, and open new opportunities for polaritonic semiconductor devices operating in extreme light-matter coupling regimes.

cond-mat.mes-hall↗

arXiv2025

Terahertz magnon-polaritons control using a tunable liquid crystal cavity

Strong coupling of light to a collective spin excitation in antiferromagnets gives rise to hybrid modes called magnon-polaritons. They are highly promising for data manipulation and transfer at terahertz rates, much faster than in the case of ferromagnetic magnon-polaritons, which operate at GHz frequencies. Yet, control of terahertz magnon-polaritons by the voltage, i.e. without ohmic dissipation losses, remains challenging. Here, we showcase the ability to remotely control antiferromagnetic magnon-polaritons at room temperature using an electric field by integrating a highly birefringent liquid crystal layer into a terahertz Fabry-Pérot cavity containing an antiferromagnetic crystal. Positioned several millimeters from the magnetic material, the liquid crystal allows for electrical manipulation of the cavity's photonic environment by control of its dielectric constant. This adjustment, in turn, influences the extent of magnon dressing by cavity photons, thereby controlling the vacuum Rabi oscillations of the magnon resonance coupled to a particular cavity mode. Our approach enables reversible tuning of magnon-photon hybridization that can be triggered without direct electrical contact or alteration of the magnetic medium. These findings pave the way for voltage-programmable terahertz magnonic devices and open new avenues for noninvasive control strategies in spin-based information processing technologies.

cond-mat.other↗

arXiv2025

Positive Terahertz Photoconductivity in CdHgTe Under Hydrostatic Pressure

Positive terahertz photoconductivity is observed at room temperature in CdHgTe thin films with different Cd contents. We show that electron gas heating caused by Drude-like absorption results in positive photoconductivity because of the interband activation mechanism specific for undoped narrow-gap semiconductors and semimetals. Applying intense terahertz radiation, we observed that the photoconductivity saturates at high intensities, which was found to be caused by absorption bleaching. Both the magnitude of the photoconductivity and the saturation intensity are shown to exhibit an exponential dependence on the hydrostatic pressure. We show that this is a consequence of the fact that both phenomena are controlled by the ratio of energy and momentum relaxation times.

cond-mat.mes-hall↗

arXiv2025

Unveiling the Miniband Structure of Graphene Moiré Superlattices via Gate-dependent Terahertz Photocurrent Spectroscopy

Moiré superlattices formed at the interface between stacked two-dimensional atomic crystals offer limitless opportunities to design materials with widely tunable properties and engineer intriguing quantum phases of matter. However, despite progress, precise probing of the electronic states and tantalizingly complex band textures of these systems remain challenging. Here, we present gate-dependent terahertz photocurrent spectroscopy as a robust technique to detect, explore and quantify intricate electronic properties in graphene moiré superlattices. Specifically, using terahertz light at different frequencies, we demonstrate distinct photocurrent regimes evidencing the presence of avoided band crossings and tiny (~1-20 meV) inversion-breaking global and local energy gaps in the miniband structure of minimally twisted graphene and hexagonal boron nitride heterostructures, key information that is inaccessible by conventional electrical or optical techniques. In the off-resonance regime, when the radiation energy is smaller than the gap values, enhanced zero-bias responsivities arise in the system due to the lower Fermi velocities and specific valley degeneracies of the charge carriers subjected to moiré superlattice potentials. In stark contrast, above-gap excitations give rise to bulk photocurrents -- intriguing optoelectronic responses related to the geometric Berry phase of the constituting electronic minibands. Besides their fundamental importance, these results place moiré superlattices as promising material platforms for advanced, sensitive and low-noise terahertz detection applications.

cond-mat.mes-hall↗

arXiv2025

Extreme Terahertz Nonlinearity of AlGaN/GaN-based Grating-Gate Plasmonic Crystals

We present a novel approach to enhance THz nonlinearity by the resonant excitation of two-dimensional plasmons in grating-gate plasmonic crystals. Using a high-electric-field THz pump-THz probe technique, we investigate the nonlinear interaction of spectrally narrow THz pulses with plasmon oscillations in a two-dimensional electron gas on an AlGaN/GaN interface integrated with metallic grating. Nonlinear effects are observed as ultrafast, pump-induced changes in THz transmission, with relative transparency strongly dependent on plasmonic mode excitation and saturating at pump fluences of about 200 nJ cm-2. The maximal relative transparency, reaching 45 % at 350 nJ cm -2, occurs under resonant excitation of a localized plasmon mode at the strong electrostatic modulation of 2DEG concentration. Transient dynamics reveal ultrafast relaxation times of 15-20 ps, while the effects can be observed at elevated temperatures of up to 150 K. A nonlinear model of plasmonic crystal, based on finite-difference time-domain electrodynamic simulations coupled with viscous hydrodynamic electron transport model, elucidates key nonlinear mechanisms, including near-field effects under metallic gratings, electron heating, plasmon resonance broadening, and redshift. These results demonstrate that even conventional semiconductors such as AlGaN/GaN can achieve nonlinear THz responses comparable to or exceeding those of graphene, showing strong potential for ultrafast THz modulation and nonlinear photonics applications.

physics.optics↗

arXiv2024

Temperature and Electron Concentration Dependences of 1/f Noise in Hg$_{1-x}$Cd$_x$Te -- Evidence for a Mobility Fluctuations Mechanism

Hg$_{1-x}$Cd$_x$Te is a unique material with the band-gap tunable by the temperature, pressure, and cadmium content in a wide range, from 1.6 eV to inverted band-gap of -0.3 eV. This makes Hg$_{1-x}$Cd$_x$Te one of the key materials for infrared and terahertz detectors, whose characteristics largely depend on the material noise properties. In this work, we investigated the low-frequency 1/f noise in a thick (800 nm) HgCdTe layer and in a field effect transistor (FET) with an 8 nm wide HgTe quantum well. Both structures exhibited a small contribution from contact noise and showed weak noise dependences on temperature. Investigation of the 1/f noise in HgTe quantum well FET as a function of gate voltage revealed that the noise also depends weakly on electron concentration. These findings indicate that the noise properties of Hg$_{1-x}$Cd$_x$Te are similar to those of graphene, where mobility fluctuations were found to be the dominant mechanism of the 1/f noise.

cond-mat.mes-hall↗

arXiv2024

Hybridization of terahertz phonons and magnons in disparate and spatially-separated material specimens

The interaction between light and matter in condensed matter excitations and electromagnetic resonators serves as a rich playground for fundamental research and lies at the core of photonic and quantum technologies. Herein, we present comprehensive experimental and theoretical studies of the photon-mediated hybridization of magnons and phonons in the terahertz (THz) range. We demonstrate the intriguing concept of composite states formed by distinct electric and magnetic quasiparticles strongly coupled to the same optical cavity modes. Specifically, we explore magnons excited in a slab of an antiferromagnetic crystal and phonons excited in a distinct specimen of an insulating material. The crystal slabs form an optical cavity with Fabry-Pérot oscillations in the THz range. We demonstrate hybridized phonon-magnon polariton modes and their tunability by adjusting the distance between the slabs, showing that hybridization persists even at separations up to several millimeters. The experimental results are interpreted using both classical and quantum electrodynamical models. The quantum description allows us to quantify the degree of hybridization that is linked to a topological behavior of the electric field phasor, in agreement with the classical electrodynamics expectations. Importantly, the presented results refer to temperature conditions and cavities of millimeter size, paving the way for engineering realistic, frequency-tunable THz devices through the hybridization of electric (phononics) and magnetic (spintronics) elementary excitations of matter.

physics.optics↗

arXiv2023

Strong transient magnetic fields induced by THz-driven plasmons in graphene disks

Strong circularly polarized excitation opens up the possibility to generate and control effective magnetic fields in solid state systems, e.g., via the optical inverse Faraday effect or the phonon inverse Faraday effect. While these effects rely on material properties that can be tailored only to a limited degree, plasmonic resonances can be fully controlled by choosing proper dimensions and carrier concentrations. Plasmon resonances provide new degrees of freedom that can be used to tune or enhance the light-induced magnetic field in engineered metamaterials. Here we employ graphene disks to demonstrate light-induced transient magnetic fields from a plasmonic circular current with extremely high efficiency. The effective magnetic field at the plasmon resonance frequency of the graphene disks (3.5 THz) is evidenced by a strong (~1°) ultrafast Faraday rotation (~ 20 ps). In accordance with reference measurements and simulations, we estimated the strength of the induced magnetic field to be on the order of 0.7 T under a moderate pump fluence of about 440 nJ cm-2.

cond-mat.mes-hall↗

arXiv2021

Nature of the 1/f Noise in Graphene, Direct Evidence for the Mobility Fluctuations Mechanism

The nature of the low-frequency current fluctuations, i.e. carrier number vs. mobility, defines the strategies for noise reduction in electronic devices. While the 1/f noise in metals has been attributed to the electron mobility fluctuations, the direct evidence is lacking (f is the frequency). Here we measured noise in h-BN encapsulated graphene transistor under the condition of geometrical magnetoresistance to directly assess the mechanism of low-frequency electronic current fluctuations. It was found that the relative noise spectral density of the graphene resistance fluctuations depends non-monotonically on the magnetic field (B) with a minimum at approximately uB=1 (u is the electron mobility). This observation proves unambiguously that the mobility fluctuations are the dominant mechanism of the electronic noise in high-quality graphene. Our results are important for all proposed applications of graphene in electronics and add to the fundamental understanding of the 1/f noise origin in any electronic device.

cond-mat.mes-hall↗

arXiv2021

Quantum-dot single-electron transistor as thermoelectric quantum detectors at terahertz frequencies

Low dimensional nano-systems are promising candidates for manipulating, controlling and capturing photons with large sensitivities and low-noise. If quantum engineered to tailor the energy of the localized electrons across the desired frequency range, they can allow devising efficient quantum sensors across any frequency domain. Here, we exploit the rich few-electrons physics to develop millimeter-wave nanodetectors employing as sensing element an InAs/InAs0.3P0.7 quantum-dot nanowire, embedded in a single electron transistor. Once irradiated with light the deeply localized quantum element exhibits an extra electromotive force driven by the photothermoelectric effect, which is exploited to efficiently sense radiation at 0.6 THz with a noise equivalent power < 8 pWHz-1/2 and almost zero dark current. The achieved results open intriguing perspectives for quantum key distributions, quantum communications and quantum cryptography at terahertz frequencies.

cond-mat.mes-hall↗

arXiv2020

Room Temperature Amplification of Terahertz Radiation by Grating-Gate Graphene Structures

We report on experimental studies of terahertz (THz) radiation transmission through grating-gate graphene-channel transistor nanostructures and demonstrate room temperature THz radiation amplification stimulated by current-driven plasmon excitations. Specifically, with increase of the direct current (dc) under periodic charge density modulation, we observe a strong red shift of the resonant THz plasmon absorption, its complete bleaching, followed by the amplification and blue shift of the resonant plasmon frequency. Our results are, to the best of our knowledge, the first experimental observation of energy transfer from dc current to plasmons leading to THz amplification. We present a simple model allowing for the phenomenological description of the observed amplification phenomena. This model shows that in the presence of dc current the radiation-induced correction to dissipation is sensitive to the phase shift between THz oscillations of carrier density and drift velocity, and with increase of the current becomes negative, leading to amplification. The experimental results of this work as all obtained at room temperature, pave the way towards the new 2D plasmons based, voltage tuneable THz radiation amplifiers.

physics.app-ph↗

arXiv2020

Graphene Composites as Efficient Electromagnetic Absorbers in the Extremely High Frequency Band

We report on the synthesis of the epoxy-based composites with graphene fillers and testing their electromagnetic shielding efficiency by the quasi-optic free-space method in the extremely high frequency (EHF) band (220 - 325 GHz). The curing adhesive composites were produced by a scalable technique with a mixture of single-layer and few-layer graphene layers of a few-micron lateral dimensions. It was found that the electromagnetic transmission, T, is low even at small concentrations of graphene fillers: T<1% at frequency of 300 GHz for a composite with only 1 wt% of graphene. The main shielding mechanism in composites with the low graphene loading is absorption. The composites of 1 mm thickness and graphene loading of 8 wt% provide excellent electromagnetic shielding of 70 dB in the sub-terahertz EHF frequency with negligible energy reflection to the environment. The developed lightweight adhesive composites with graphene fillers can be used as electromagnetic absorbers in the high-frequency microwave radio relays, microwave remote sensors, millimeter wave scanners, and wireless local area networks.

physics.app-ph↗

arXiv2019

Time resolution and dynamic range of field effect transistor based terahertz detectors

We studied time resolution and response power dependence of three terahertz detectors based on significantly different types of field effect transistors. We analyzed the photoresponse of custom-made Si junctionless FETs, Si MOSFETs and GaAs-based high electron mobility transistors detectors. Applying monochromatic radiation of high power, pulsed, line-tunable molecular THz laser, which operated at frequencies in the range from 0.6-3.3 THz, we demonstrated that all these detectors have at least nanosecond response time. We showed that detectors yield a linear response in a wide range of radiation power. At high powers the response saturates varying with radiation power P as $U = R_0 P/(1+P/P_s)$, where $R_0$ is the low power responsivity, $P_s$ is the saturation power. We demonstrated that the linear part response decreases with radiation frequency increase as $R_0 \propto f^{-3}$, whereas the power at which signal saturates increases as $P_s \propto f^3$. We discussed the observed dependences in the framework of the Dyakonov-Shur mechanism and detector-antenna impedance matching. Our study showed that FET transistors can be used as ultrafast room temperature detectors of THz radiation and that their dynamic range extends over many orders of magnitude of power of incoming THz radiation. Therefore, when embedded with current driven read out electronics they are very well adopted for operation with high power pulsed sources.

physics.app-ph↗

arXiv2018

Perspectives of HgTe Topological Insulators for Quantum Hall Metrology

We report the studies of high-quality HgTe/(Cd,Hg)Te quantum wells (QWs) with a width close to the critical one $d_c$, corresponding to the topological phase transition and graphene like band structure in view of their applications for Quantum Hall Effect (QHE) resistance standards. We show that in the case of inverted band ordering, the coexistence of conducting topological helical edge states together with QHE chiral states degrades the precision of the resistance quantization. By experimental and theoretical studies we demonstrate how one may reach very favorable conditions for the QHE resistance standards: low magnetic fields allowing to use permanent magnets ( B $\leq$ 1.4T) and simultaneously realtively high teperatures (liquid helium, T $\geq$ 1.3K). This way we show that HgTe QW based QHE resistance standards may replace their graphene and GaAs counterparts and pave the way towards large scale fabrication and applications of QHE metrology devices.

cond-mat.mes-hall↗

arXiv2018

Heterostructured hBN-BP-hBN Nanodetectors at THz Frequencies

Artificial semiconductor heterostructures played a pivotal role in modern electronic and photonic technologies, providing a highly effective mean for the manipulation and control of carriers, from the visible to the Terahertz (THz) frequency range. Despite the exceptional versatility, they commonly require challenging epitaxial growth procedures due to the need of clean and abrupt interfaces, which proved to be a major obstacle for the realization of room-temperature (RT), high-efficiency devices, like source, detectors or modulators, especially in the far-infrared. Two-dimensional (2D) layered materials, like graphene and phosphorene, recently emerged as a reliable, flexible and versatile alternative for devising efficient RT detectors operating at Terahertz frequencies. We here combine the benefit of the heterostructure architecture with the exceptional technological potential of 2D layered nanomaterials; by reassembling the thin isolated atomic planes of hexagonal borum nitride (hBN) with a few layer phosphorene (black phosphorus (BP)) we mechanically stacked hBN/BP/hBN heterostructures to devise high-efficiency THz photodetectors operating in the 0.3-0.65 THz range from 4K to 300K with a record SNR=20000.

cond-mat.mes-hall↗

arXiv2018

Black-Phosphorus Terahertz Photodetectors

The discovery of graphene and the related fascinating capabilities have triggered an unprecedented interest in inorganic two-dimensional (2D) materials. Despite the impressive impact in a variety of photonic applications, the absence of energy gap has hampered its broader applicability in many optoelectronic devices. The recent advance of novel 2D materials, such as transition-metal dichalcogenides or atomically thin elemental materials, (e.g. silicene, germanene and phosphorene) promises a revolutionary step-change. Here we devise the first room-temperature Terahertz (THz) frequency detector exploiting few-layer phosphorene, e.g., a 10 nm thick flake of exfoliated crystalline black phosphorus (BP), as active channel of a field-effect transistor (FET). By exploiting the direct band gap of BP to fully switch between insulating and conducting states and by engineering proper antennas for efficient light harvesting, we reach detection performance comparable with commercial detection technologies, providing the first technological demonstration of a phosphorus-based active THz device.

cond-mat.other↗

arXiv2018

Probing topological insulators surface states via plasma-wave Terahertz detection

Topological insulators (TIs) represent a novel quantum state of matter, characterized by edge or surface-states, showing up on the topological character of the bulk wave functions. Allowing electrons to move along their surface, but not through their inside, they emerged as an intriguing material platform for the exploration of exotic physical phenomena, somehow resembling the graphene Dirac-cone physics, as well as for exciting applications in optoelectronics, spintronics, nanoscience, low-power electronics, and quantum computing. Investigation of topological surface states (TSS) is conventionally hindered by the fact that in most of experimental conditions the TSS properties are mixed up with those of bulk-states. Here, we devise a novel tool to unveil TSS and to probe related plasmonic effects. By engineering Bi2Te(3-x)Sex stoichiometry, and by gating the surface of nanoscale field-effect-transistors, exploiting thin flakes of Bi2Te2.2Se0.8 or Bi2Se3, we provide the first demonstration of room-temperature Terahertz (THz) detection mediated by over-damped plasma-wave oscillations on the "activated" TSS of a Bi2Te2.2Se0.8 flake. The reported detection performances allow a realistic exploitation of TSS for large-area, fast imaging, promising superb impacts on THz photonics.

cond-mat.mes-hall↗