arXiv subjects

Wojciech Knap

Publications and source records attributed to Wojciech Knap.

23 records · Page 2Linked to original sources

arXiv2018

Probing topological insulators surface states via plasma-wave Terahertz detection

Topological insulators (TIs) represent a novel quantum state of matter, characterized by edge or surface-states, showing up on the topological character of the bulk wave functions. Allowing electrons to move along their surface, but not through their inside, they emerged as an intriguing material platform for the exploration of exotic physical phenomena, somehow resembling the graphene Dirac-cone physics, as well as for exciting applications in optoelectronics, spintronics, nanoscience, low-power electronics, and quantum computing. Investigation of topological surface states (TSS) is conventionally hindered by the fact that in most of experimental conditions the TSS properties are mixed up with those of bulk-states. Here, we devise a novel tool to unveil TSS and to probe related plasmonic effects. By engineering Bi2Te(3-x)Sex stoichiometry, and by gating the surface of nanoscale field-effect-transistors, exploiting thin flakes of Bi2Te2.2Se0.8 or Bi2Se3, we provide the first demonstration of room-temperature Terahertz (THz) detection mediated by over-damped plasma-wave oscillations on the "activated" TSS of a Bi2Te2.2Se0.8 flake. The reported detection performances allow a realistic exploitation of TSS for large-area, fast imaging, promising superb impacts on THz photonics.

cond-mat.mes-hall↗

arXiv2018

Plasmonic instabilities and terahertz waves amplification in graphene metamaterials

Plasmon oscillations have been intensively studied for more than forty years in conventional two-dimensional electron gas systems in order to find new alternatives to the vacuum devices based on the Smith-Purcell effect in the far-infrared region. However, beside the multiple endeavors, up to date, the plasmon generation in semiconductor heterostructures has been very inefficient. Here we demonstrate that the use of high mobility graphene metamaterials, due to their well-known stronger light-plasmon coupling compared to semiconductor materials can significantly improve the efficiency of far-infrared plasmonic amplifiers and generators. We explore current-driven plasmon dynamics including perfect transparency and light amplification in monolayer graphene structures. Current-induced complete suppression of the graphene absorption is experimentally observed in a broad frequency range followed by a giant amplification (up to about 9 % gain) of an incoming terahertz radiation at room temperature. These active plasmonic processes are triggered by relatively low bias voltage in the graphene devices leading to external quantum efficiency of about two orders of magnitude higher than those of the popular optical-to-terahertz conversion devices largely used in far-infrared technologies. Our results combined with the relatively low level of losses and high degree of spatial confinement of plasmons in graphene will open pathways for a wide range of integrated high speed active optoelectronics devices.

physics.app-ph↗

arXiv2014

High intensity study of THz detectors based on field effect transistors

Terahertz power dependence of the photoresponse of field effect transistors, operating at frequencies from 0.1 to 3 THz for incident radiation power density up to 100 kW/cm^2 was studied for Si metal-oxide-semiconductor field-effect transistors and InGaAs high electron mobility transistors. The photoresponse increased linearly with increasing radiation power up to kW/cm^2 range. The saturation of the photoresponse was observed for all investigated field effect transistors for intensities above several kW/cm^2. The observed signal saturation is explained by drain photocurrent saturation similar to saturation in direct currents output characteristics. The theoretical model of terahertz field effect transistor photoresponse at high intensity was developed. The model explains quantitatively experimental data both in linear and nonlinear (saturation) range. Our results show that dynamic range of field effect transistors is very high and can extend over more than six orderd of magnitudes of power densities (from 0.5 mW/cm^2 to 5 kW/cm^2).

cond-mat.mes-hall↗

arXiv2013

High performance bilayer-graphene Terahertz detectors

We report bilayer-graphene field effect transistors operating as THz broadband photodetectors based on plasma-waves excitation. By employing wide-gate geometries or buried gate configurations, we achieve a responsivity $\sim 1.2V/W (1.3 mA/W)$ and a noise equivalent power $\sim 2\times 10^{-9} W/Hz^{-1/2}$ in the 0.29-0.38 THz range, in photovoltage and photocurrent mode. The potential of this technology for scalability to higher frequencies and the development of flexible devices makes our approach competitive for a future generation of THz detection systems.

cond-mat.mes-hall↗

arXiv2012

Helicity sensitive terahertz radiation detection by field effect transistors

Terahertz light helicity sensitive photoresponse in GaAs/AlGaAs high electron mobility transistors. The helicity dependent detection mechanism is interpreted as an interference of plasma oscillations in the channel of the field-effect-transistors (generalized Dyakonov-Shur model). The observed helicity dependent photoresponse is by several orders of magnitude higher than any earlier reported one. Also linear polarization sensitive photoresponse was registered by the same transistors. The results provide the basis for a new sensitive, all-electric, room-temperature and fast (better than 1 ns) characterisation of all polarization parameters (Stokes parameters) of terahertz radiation. It paves the way towards terahertz ellipsometry and polarization sensitive imaging based on plasma effects in field-effect-transistors.

cond-mat.mes-hall↗