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Woosuk Yoo

Publications and source records attributed to Woosuk Yoo.

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Chiral magnetic interlayer coupling in synthetic antiferromagnets

The exchange coupling underlies ferroic magnetic coupling and is thus the key element that governs statics and dynamics of magnetic systems. This fundamental interaction comes in two flavors - symmetric and antisymmetric coupling. While symmetric coupling leads to ferro- and antiferromagnetism, antisymmetric coupling has attracted significant interest owing to its major role in promoting topologically non-trivial spin textures that promise high-speed and energy-efficient devices. So far, the antisymmetric exchange coupling rather short-ranged and limited to a single magnetic layer has been demonstrated, while the symmetric coupling also leads to long-range interlayer exchange coupling. Here, we report the missing component of the long-range antisymmetric interlayer exchange coupling in perpendicularly magnetized synthetic antiferromagnets with parallel and antiparallel magnetization alignments. Asymmetric hysteresis loops under an in-plane field unambiguously reveal a unidirectional and chiral nature of this novel interaction, which cannot be accounted for by existing coupling mechanisms, resulting in canted magnetization alignments. This can be explained by spin-orbit coupling combined with reduced symmetry in multilayers. This new class of chiral interaction provides an additional degree of freedom for engineering magnetic structures and promises to enable a new class of three-dimensional topological structures.

cond-mat.mtrl-sci

Structural, magnetic, and electrical properties of collinear antiferromagnetic heteroepitaxy cubic Mn$_3$Ga thin films

Although a cubic phase of Mn$_3$Ga with an antiferromagnetic order has been theoretically predicted, it has not been experimentally verified in a bulk or film form. Here, we report the structural, magnetic, and electrical properties of antiferromagnetic cubic Mn$_3$Ga (C-Mn$_3$Ga) thin films, in comparison with ferrimagnetic tetragonal Mn$_3$Ga (T-Mn3Ga). The structural analyses reveal that C-Mn$_3$Ga is hetero-epitaxially grown on MgO substrate with the Cu$_3$Au-type cubic structure, which transforms to T-Mn$_3$Ga as the RF sputtering power increases. The magnetic and magnetotransport data show the antiferromagnetic transition at T$_N$ = 400 K for C-Mn$_3$Ga and the ferrimagnetic transition at T$_C$ = 820 K for T-Mn$_3$Ga. Furthermore, we find that the antiferromagnetic C-Mn$_3$Ga exhibits a higher electrical resistivity than the ferrimagnetic T-Mn$_3$Ga, which can be understood by spin-dependent scattering mechanism.

physics.app-ph