arXiv subjects

Wu Zhou

Publications and source records attributed to Wu Zhou.

49 records · Page 3Linked to original sources

arXiv2022

Ferromagnetic-antiferromagnetic coexisting ground states and exchange bias effects in $\bf{MnBi_4Te_7}$ and $\bf{MnBi_6Te_{10}}$

Natural superlattice structures $\rm{(MnBi_2Te_4)(Bi_2Te_3)}$$_n$ ($n$ = 1, 2,...), in which magnetic $\rm{MnBi_2Te_4}$ layers are separated by nonmagnetic $\rm{Bi_2Te_3}$ layers, hold band topology, magnetism and reduced interlayer coupling, providing a promising platform for the realization of exotic topological quantum states. However, their magnetism in the two-dimensional limit, which is crucial for further exploration of quantum phenomena, remains elusive. Here, complex ferromagnetic (FM)-antiferromagnetic (AFM) coexisting ground states that persist up to the 2-septuple layers (SLs) limit are observed and comprehensively investigated in $\rm{MnBi_4Te_7}$ ($n$ = 1) and $\rm{MnBi_6Te_{10}}$ ($n$ = 2). The ubiquitous Mn-Bi site mixing modifies or even changes the sign of the subtle inter-SL magnetic interactions, yielding a spatially inhomogeneous interlayer coupling. Further, a tunable exchange bias effect is observed in $\rm{(MnBi_2Te_4)(Bi_2Te_3)}$$_n$ ($n$ = 1, 2), arising from the coupling between the FM and AFM components in the ground state. Our work highlights a new approach toward the fine-tuning of magnetism and paves the way for further study of quantum phenomena in $\rm{(MnBi_2Te_4)(Bi_2Te_3)}$$_n$ ($n$ = 1, 2,...) as well as their magnetic applications.

cond-mat.mtrl-sci↗

arXiv2022

Emergence of superconducting dome in insulating ZrNx films via nitrogen manipulation

Reproducing the electronic phase diagram of strongly correlated high-transition-temperature (high-Tc) superconductors in materials other than Cu-, Fe-, and Ni-based compounds has been a challenging task. Only very recently, a few material systems have partially achieved this goal by band engineering. In this work, we combine film growth, charge transport, magnetometry, Terahertz Spectroscopy, Raman scattering, and Scanning Transmission Electron Microscopy to investigate superconductivity and the normal state of ZrNx, which reveals a phase diagram that bears extraordinary similarities to those of high-Tc superconductors. Remarkably, even though superconductivity of ZrNx can be characterized within the Bardeen-Cooper-Schrieffer paradigm and its normal state can be understood within the Fermi liquid framework, by tunning the N chemical concentration, we observe the evolution of a superconducting dome in the close vicinity of a strongly insulating state and a normal state resistivity mimics its counterpart of the high-Tc superconductors.

cond-mat.supr-con↗

arXiv2022

Ultrathin quantum light source enabled by a nonlinear van der Waals crystal with vanishing interlayer-electronic-coupling

Interlayer electronic coupling in two-dimensional (2D) materials enables tunable and emergent properties by stacking engineering. However, it also brings significant evolution of electronic structures and attenuation of excitonic effects in 2D semiconductors as exemplified by quickly degrading excitonic photoluminescence and optical nonlinearities in transition metal dichalcogenides when monolayers are stacked into van der Waals structures. Here we report a novel van der Waals crystal, niobium oxide dichloride, featuring a vanishing interlayer electronic coupling and scalable second harmonic generation intensity of up to three orders higher than that of exciton-resonant monolayer WS2. Importantly, the strong second-order nonlinearity enables correlated parametric photon pair generation, via a spontaneous parametric down-conversion (SPDC) process, in flakes as thin as ~46 nm. To our knowledge, this is the first SPDC source unambiguously demonstrated in 2D layered materials, and the thinnest SPDC source ever reported. Our work opens an avenue towards developing van der Waals material-based ultracompact on-chip SPDC sources, and high-performance photon modulators in both classical and quantum optical technologies.

physics.optics↗

arXiv2021

Atomically sharp interface enabled ultrahigh-speed, nonvolatile memory devices

Development of memory devices with ultimate performance has played a key role in innovation of modern electronics. As a mainstream technology nonvolatile memory devices have manifested high capacity and mechanical reliability, however current major bottlenecks include low extinction ratio and slow operational speed. Although substantial effort has been employed to improve their performance, a typical hundreds of micro- or even milli- second write time remains a few orders of magnitude longer than their volatile counterparts. We have demonstrated nonvolatile, floating-gate memory devices based on van der Waals heterostructures with atomically sharp interfaces between different functional elements, and achieved ultrahigh-speed programming/erasing operations verging on an ultimate theoretical limit of nanoseconds with extinction ratio up to 10^10. This extraordinary performance has allowed new device capabilities such as multi-bit storage, thus opening up unforeseen applications in the realm of modern nanoelectronics and offering future fabrication guidelines for device scale-up.

physics.app-ph↗

arXiv2021

Hermitian threefolds with vanishing real bisectional curvature

We examine the class of compact Hermitian manifolds with constant holomorphic sectional curvature. Such manifolds are conjectured to be Kähler (hence a complex space form) when the constant is non-zero and Chern flat (hence a quotient of a complex Lie group) when the constant is zero. The conjecture is known in complex dimension two but open in higher dimensions. In this paper, we establish a partial solution in complex dimension three by proving that any compact Hermitian threefold with zero real bisectional curvature must be Chern flat. Real bisectional curvature is a curvature notion introduced by Xiaokui Yang and the second named author in 2019, generalizing holomorphic sectional curvature. It is equivalent to the latter in the Kähler case and is slightly stronger in general.

math.DG↗

arXiv2021

Two distinct superconducting states controlled by orientation of local wrinkles in LiFeAs

We observe two types of superconducting states controlled by orientations of local wrinkles on the surface of LiFeAs. Using scanning tunneling microscopy/spectroscopy, we find type-I wrinkles enlarge the superconducting gaps and enhance the transition temperature, whereas type-II wrinkles significantly suppress the superconducting gaps. The vortices on wrinkles show a C2 symmetry, indicating the strain effects on the wrinkles. A discontinuous switch of superconductivity occurs at the border between two different wrinkles. Our results demonstrate that the local strain effect could affect superconducting order parameter of LiFeAs with a possible Lifshitz transition, by alternating crystal structure in different directions.

cond-mat.supr-con↗

arXiv2020

Investigating phase transitions from local crystallographic analysis based on machine learning of atomic environments

Traditionally, phase transitions are explored using a combination of macroscopic functional characterization and scattering techniques, providing insight into average properties and symmetries of the lattice but local atomic level mechanisms during phase transitions generally remain unknown. Here we explore the mechanisms of a phase transition between the trigonal prismatic and distorted octahedral phases of layered chalogenides in the MoS2 ReS2 system from the observations of local degrees of freedom, namely atomic positions by Scanning Transmission Electron Microscopy (STEM). We employ local crystallographic analysis based on machine learning of atomic environments to build a picture of the transition from the atomic level up and determine local and global variables controlling the local symmetry breaking. In particular, we argue that the dependence of the average symmetry breaking distortion amplitude on global and local concentration can be used to separate local chemical and global electronic effects on transition. This approach allows exploring atomic mechanisms beyond the traditional macroscopic descriptions, utilizing the imaging of compositional fluctuations in solids to explore phase transitions over a range of realized and observed local stoichiometries and atomic configurations.

cond-mat.mtrl-sci↗

arXiv2019

Order and randomness in dopant distributions: exploring the thermodynamics of solid solutions from atomically resolved imaging

Exploration of structure-property relationships as a function of dopant concentration is commonly based on mean field theories for solid solutions. However, such theories that work well for semiconductors tend to fail in materials with strong correlations, either in electronic behavior or chemical segregation. In these cases, the details of atomic arrangements are generally not explored and analyzed. The knowledge of the generative physics and chemistry of the material can obviate this problem, since defect configuration libraries as stochastic representation of atomic level structures can be generated, or parameters of mesoscopic thermodynamic models can be derived. To obtain such information for improved predictions, we use data from atomically resolved microscopic images that visualize complex structural correlations within the system and translate them into statistical mechanical models of structure formation. Given the significant uncertainties about the microscopic aspects of the material's processing history along with the limited number of available images, we combine model optimization techniques with the principles of statistical hypothesis testing. We demonstrate the approach on data from a series of atomically-resolved scanning transmission electron microscopy images of Mo$_x$Re$_{1-x}$S$_2$ at varying ratios of Mo/Re stoichiometries, for which we propose an effective interaction model that is then used to generate atomic configurations and make testable predictions at a range of concentrations and formation temperatures.

cond-mat.mtrl-sci↗

arXiv2018

High resolution electron microscopy for heterogeneous catalysis research

Heterogeneous catalysts are the most important catalysts in industrial reactions. Nanocatalysts, with size ranging from hundreds of nanometers to the atomic scale, possess activities that are closely connected to their structural characteristics such as particle size, surface morphology, and three-dimensional topography. Recently, the development of advanced analytical transmission electron microscopy (TEM) techniques, especially quantitative high-angle annular dark-field (HAADF) imaging and high-energy resolution spectroscopy analysis in scanning transmission electron microscopy (STEM) at the atomic scale, strengthens the power of (S)TEM in analyzing the structural/chemical information of heterogeneous catalysts. Three-dimensional reconstruction from two-dimensional projected images and the real-time recording of structural evolution during catalytic reactions using in-situ (S)TEM methods further broaden the scope of (S)TEM observation. The atomic-scale structural information obtained from high resolution (S)TEM has proven to be of significance for better understanding and designing of new catalysts with enhanced performance.

cond-mat.mtrl-sci↗

arXiv2016

Large-area and high-quality 2D transition metal telluride

Atomically thin transitional metal ditellurides like WTe2 and MoTe2 have triggered tremendous research interests because of their intrinsic nontrivial band structure. They are also predicted to be 2D topological insulators and type-II Weyl semimetals. However, most of the studies on ditelluride atomic layers so far rely on the low-yield and time-consuming mechanical exfoliation method. Direct synthesis of large-scale monolayer ditellurides has not yet been achieved. Here, using the chemical vapor deposition (CVD) method, we demonstrate controlled synthesis of high-quality and atom-thin tellurides with lateral size over 300 μm. We found that the as-grown WTe2 maintains two different stacking sequences in the bilayer, where the atomic structure of the stacking boundary is revealed by scanning transmission electron microscope (STEM). The low-temperature transport measurements revealed a novel semimetal-to-insulator transition in WTe2 layers and an enhanced superconductivity in few-layer MoTe2. This work paves the way to the synthesis of atom-thin tellurides and also quantum spin Hall devices.

cond-mat.mtrl-sci↗

arXiv2015

Controlled Synthesis of Organic/Inorganic van der Waals Solid for Tunable Light-matter Interactions

Van der Waals (vdW) solids, as a new type of artificial materials that consist of alternating layers bonded by weak interactions, have shed light on fascinating optoelectronic device concepts. As a result, a large variety of vdW devices have been engineered via layer-by-layer stacking of two-dimensional materials, although shadowed by the difficulties of fabrication. Alternatively, direct growth of vdW solids has proven as a scalable and swift way, highlighted by the successful synthesis of graphene/h-BN and transition metal dichalcogenides (TMDs) vertical heterostructures from controlled vapor deposition. Here, we realize high-quality organic and inorganic vdW solids, using methylammonium lead halide (CH3NH3PbI3) as the organic part (organic perovskite) and 2D inorganic monolayers as counterparts. By stacking on various 2D monolayers, the vdW solids behave dramatically different in light emission. Our studies demonstrate that h-BN monolayer is a great complement to organic perovskite for preserving its original optical properties. As a result, organic/h-BN vdW solid arrays are patterned for red light emitting. This work paves the way for designing unprecedented vdW solids with great potential for a wide spectrum of applications in optoelectronics.

physics.chem-ph↗

arXiv2014

Orbital occupancy and charge doping in iron-based superconductors

Iron-based superconductors (FBS) comprise several families of compounds having the same atomic building blocks for superconductivity, but large discrepancies among their physical properties. A longstanding goal in the field has been to decipher the key underlying factors controlling TC and the various doping mechanisms. In FBS materials this is complicated immensely by the different crystal and magnetic structures exhibited by the different families. In this paper, using aberration-corrected scanning transmission electron microscopy (STEM) coupled with electron energy loss spectroscopy (EELS), we observe a universal behavior in the hole concentration and magnetic moment across different families. All the parent materials have the same total number of electrons in the Fe 3d bands; however, the local Fe magnetic moment varies due to different orbital occupancy. Although the common understanding has been that both long-range and local magnetic moments decrease with doping, we find that, near the onset of superconductivity, the local magnetic moment increases and shows a dome-like maximum near optimal doping, where no ordered magnetic moment is present. In addition, we address a longstanding debate concerning how Co substitutions induces superconductivity in the 122 arsenide family, showing that the 3d band filling increases a function of doping. These new microscopic insights into the properties of FBS demonstrate the importance of spin fluctuations for the superconducting state, reveal changes in orbital occupancy among different families of FBS, and confirm charge doping as one of the mechanisms responsible for superconductivity in 122 arsenides.

cond-mat.supr-con↗

arXiv2013

Vapor Phase Growth and Grain Boundary Structure of Molybdenum Disulfide Atomic Layers

Single layered molybdenum disulfide with a direct bandgap is a promising two-dimensional material that goes beyond graphene for next generation nanoelectronics. Here, we report the controlled vapor phase synthesis of molybdenum disulfide atomic layers and elucidate a fundamental mechanism for the nucleation, growth, and grain boundary formation in its crystalline monolayers. Furthermore, a nucleation-controlled strategy is established to systematically promote the formation of large-area single- and few-layered films. The atomic structure and morphology of the grains and their boundaries in the polycrystalline molybdenum disulfide atomic layers are examined and first-principles calculations are applied to investigate their energy landscape. The electrical properties of the atomic layers are examined and the role of grain boundaries is evaluated. The uniformity in thickness, large grain sizes, and excellent electrical performance of these materials signify the high quality and scalable synthesis of the molybdenum disulfide atomic layers.

cond-mat.mtrl-sci↗