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X. C. Xie

Publications and source records attributed to X. C. Xie.

At least 235 records · Page 13Linked to original sources
arXiv2013

Spin-current Seebeck effect in quantum dot systems

We first bring up the concept of spin-current Seebeck effect based on a recent experiment [Nat. Phys. {\bf 8}, 313 (2012)], and investigate the spin-current Seebeck effect in quantum dot (QD) systems. Our results show that the spin-current Seebeck coefficient $S$ is sensitive to different polarization states of QD, and therefore can be used to detect the polarization state of QD and monitor the transitions between different polarization states of QD. The intradot Coulomb interaction can greatly enhance the $S$ due to the stronger polarization of QD. By using the parameters for a typical QD, we demonstrate that the maximum $S$ can be enhanced by a factor of 80. On the other hand, for a QD whose Coulomb interaction is negligible, we show that one can still obtain a large $S$ by applying an external magnetic field.

cond-mat.mes-hall↗
arXiv2013

The spin-polarized $ν=0$ state of graphene: a spin superconductor

We study the spin-polarized $ν=0$ Landau-level state of graphene. Due to the electron-hole attractive interaction, electrons and holes can bound into pairs. These pairs can then condense into a spin-triplet superfluid ground state: a spin superconductor state. In this state, a gap opens up in the edge bands as well as in the bulk bands, thus it is a charge insulator, but it can carry the spin current without dissipation. These results can well explain the insulating behavior of the spin-polarized $ν=0$ state in the recent experiments.

cond-mat.supr-con↗
arXiv2013

One-dimensional quantum channel in a graphene line defect

Using a tight-binding model, we study a line defect in graphene where a bulk energy gap is opened by sublattice symmetry breaking. It is found that sublattice symmetry breaking may induce many configurations that correspond to different band spectra. In particular, a gapless state is observed for a configuration which hold a mirror symmetry with respect to the line defect. We find that this gapless state originates from the line defect and is independent of the width of the graphene ribbon, the location of the line defect, and the potentials in the edges of the ribbon. In particular, the gapless state can be controlled by the gate voltage embedded below the line defect. Finally, this result is supported with conductance calculations. This study shows how a quantum channel could be constructed using a line defect, and how the quantum channel can be controlled by tuning the gate voltage embedded below the line defect.

cond-mat.mes-hall↗
arXiv2013

Disorder induced field effect transistor in bilayer and trilayer graphene

We propose use of disorder to produce a field effect transistor (FET) in biased bilayer and trilayer graphene. Modulation of the bias voltage can produce large variations in the conductance when the disorder's effects are confined to only one of the graphene layers. This effect is based on the bias voltage's ability to select which of the graphene layers carries current, and is not tied to the presence of a gap in the density of states. In particular, we demonstrate this effect in models of gapless ABA-stacked trilayer graphene, gapped ABC-stacked trilayer graphene, and gapped bilayer graphene.

cond-mat.mes-hall↗
arXiv2012

The dependence of topological Anderson insulator on the type of disorder

This paper details the investigation of the influence of different disorders in two-dimensional topological insulator systems. Unlike the phase transitions to topological Anderson insulator induced by normal Anderson disorder, a different physical picture arises when bond disorder is considered. Using Born approximation theory, an explanation is given as to why bond disorder plays a different role in phase transition than does Anderson disorder. By comparing phase diagrams, conductance, conductance fluctuations, and the localization length for systems with different types of disorder, a consistent conclusion is obtained. The results indicate that a topological Anderson insulator is dependent on the type of disorder. These results are important for the doping processes used in preparation of topological insulators.

cond-mat.dis-nn↗
arXiv2012

Universal scheme to generate metal-insulator transition in disordered systems

We propose a scheme to generate metal-insulator transition in random binary layer (RBL) model, which is constructed by randomly assigning two types of layers. Based on a tight-binding Hamiltonian, the localization length is calculated for a variety of RBLs with different cross section geometries by using the transfer-matrix method. Both analytical and numerical results show that a band of extended states could appear in the RBLs and the systems behave as metals by properly tuning the model parameters, due to the existence of a completely ordered subband, leading to a metal-insulator transition in parameter space. Furthermore, the extended states are irrespective of the diagonal and off-diagonal disorder strengths. Our results can be generalized to two- and three-dimensional disordered systems with arbitrary layer structures, and may be realized in Bose-Einstein condensates.

cond-mat.dis-nn↗
arXiv2012

Transient heat generation in a quantum dot under a step-like pulse bias

We study the transient heat generation in a quantum dot system driven by a step-like or a square-shaped pulse bias. We find that a periodically oscillating heat generation arises after adding the sudden bias. One particularly surprising result is that there exists a heat absorption from the zero-temperature phonon subsystem. Thus the phonon population in non-equilibrium can be less than that of the equilibrium electron-phonon system. In addition, we also ascertain the optimal conditions for the operation of a quantum dot with the minimum heat generation.

cond-mat.mes-hall↗
arXiv2012

Phase Structure of the Topological Anderson Insulator

We study the disordered topological Anderson insulator in a 2-D (square not strip) geometry. We first report the phase diagram of finite systems and then study the evolution of phase boundaries when the system size is increased to a very large $1120 \times 1120$ area. We establish that conductance quantization can occur without a bulk band gap, and that there are two distinct scaling regions with quantized conductance: TAI-I with a bulk band gap, and TAI-II with localized bulk states. We show that there is no intervening insulating phase between the bulk conduction phase and the TAI-I and TAI-II scaling regions, and that there is no metallic phase at the transition between the quantized and insulating phases. Centered near the quantized-insulating transition there are very broad peaks in the eigenstate size and fractal dimension $d_2$; in a large portion of the conductance plateau eigenstates grow when the disorder strength is increased. The fractal dimension at the peak maximum is $d_2 \approx 1.5$. Effective medium theory (CPA, SCBA) predicts well the boundaries and interior of the gapped TAI-I scaling region, but fails to predict all boundaries save one of the ungapped TAI-II scaling region. We report conductance distributions near several phase transitions and compare them with critical conductance distributions for well-known models.

cond-mat.mes-hall↗
arXiv2012

The topological system with a twisting edge band: position-dependent Hall resistance

We study a $ν=1$ topological system with one twisting edge-state band and one normal edge-state band. For the twisting edge-state band, Fermi energy goes through the band three times, thus, having three edge states on one side of the sample; while the normal edge band contributes only one edge state on the other side of the sample. In such a system, we show that it consists of both topologically protected and unprotected edge states, and as a consequence, its Hall resistance depends on the location where the Hall measurement is done even for a translationally invariant system. This unique property is absent in a normal topological insulator.

cond-mat.mes-hall↗
arXiv2012

Pole expansion of self-energy and interaction effect on topological insulators

We study effect of interactions on time-reversal-invariant topological insulators. Their topological indices are expressed by interacting Green's functions. Under the local self-energy approximation, we connect topological index and surface states of an interacting system to an auxiliary noninteracting system, whose Hamiltonian is related to the pole-expansions of the local self-energy. This finding greatly simplifies the calculation of interacting topological indices and gives an noninteracting pictorial description of interaction driven topological phase transitions. Our results also bridge studies of the correlated topological insulating materials with the practical dynamical-mean-field-theory calculations.

cond-mat.str-el↗
arXiv2012

Interaction induced topological phase transition in Bernevig-Hughes-Zhang model

We study interaction induced topological phase transition in Bernevig-Hughes-Zhang model. Topological nature of the phase transition is revealed by directly calculating the Z2 index of the interacting system from the single-particle Green's function. The interacting Z2 index is also consistently checked through the edge spectra. Combined with ab initio methods, present approach is a useful tool searching for correlated topological insulating materials from the first-principle point of view.

cond-mat.str-el↗
arXiv2011

Spin superconductor in ferromagnetic graphene

We show a spin superconductor (SSC) in ferromagnetic graphene as the counterpart to the charge superconductor, in which a spin-polarized electron-hole pair plays the role of the spin $2 (\hbar/2)$ `Cooper pair' with a neutral charge. We present a BCS-type theory for the SSC. With the `London-type equations' of the super-spin-current density, we show the existence of an electric `Meissner effect' against a spatial varying electric field. We further study a SSC/normal conductor/SSC junction and predict a spin-current Josephson effect.

cond-mat.mes-hall↗
arXiv2011

Frequency domain winding number and interaction effect on topological insulators

We study the effect of interactions on the time reversal invariant topological insulators in four and three spatial dimensions. Their topological indices are expressed by the interacting Green's functions. Under the local self-energy approximation, we find that interaction could induce nontrivial frequency-domain winding numbers and change the topological classes of the system. Our results suggest that the topological phases could be destroyed without developing long range orders. Practical issues on the accurate frequency-momentum integration combined with DMFT and diagrammatic calculations of the interacting Green's functions are also addressed.

cond-mat.str-el↗
arXiv2011

Quantum Spinon Oscillations

The full quantum dynamics of a spinon under external magnetic fields is investigated by using the time-evolving block decimation (TEBD) method within the microcanonical picture of transport. We show that the center of the spinon oscillates back and forth in the absence of dissipation. The quantum many-body behavior can be understood in a single-particle picture of transport and Bloch oscillations, where quantum fluctuations induce finite life times. Transport, oscillations and lifetimes can be tuned to some degree separately by external fields. Other nontrivial dynamics such as resonance as well as chaos have also been discussed.

cond-mat.str-el↗
arXiv2011

Three-Dimensional Topological Insulator in a Magnetic Field: Chiral Side Surface States and Quantized Hall Conductance

Low energy excitation of surface states of a three-dimensional topological insulator (3DTI) can be described by Dirac fermions. By using a tight-binding model, the transport properties of the surface states in a uniform magnetic field is investigated. It is found that chiral surface states parallel to the magnetic field are responsible to the quantized Hall (QH) conductance $(2n+1)\frac{e^2}{h}$ multiplied by the number of Dirac cones. Due to the two-dimension (2D) nature of the surface states, the robustness of the QH conductance against impurity scattering is determined by the oddness and evenness of the Dirac cone number. An experimental setup for transport measurement is proposed.

cond-mat.mes-hall↗
arXiv2011

D-wave bosonic pair in an optical lattice

We present a bosonic model, in which two bosons may form a bound pair with d-wave symmetry via the four-site ring exchange interaction. A d-wave pairing superfluid as well as a d-wave density wave (DDW) state, are proposed to be achievable in this system. This exotic bosonic system can be realized in the BEC zone of a two-dimensional attractive p-band spinless fermionic system. By the mean field approach, we find that at low densities, the d-wave pairs may condensate, leading to a d-wave bosonic paired superfluid. At some particular filling factors, a novel phase, d-wave density wave state, emerges. We study this DDW state and its corresponding quantum phase transition in a two-leg ladder by the time-evolving block decimation (TEBD) method.

cond-mat.quant-gas↗
arXiv2011

Abelian and non-abelian anyons in integer quantum anomalous Hall effect and topological phase transitions via superconducting proximity effect

We study the quantum anomalous Hall effect described by a class of two-component Haldane models on square lattices. We show that the latter can be transformed into a pseudospin triplet p+ip-wave paired superfluid. In the long wave length limit, the ground state wave function is described by Halperin's (1,1,-1) state of neutral fermions analogous to the double layer quantum Hall effect. The vortex excitations are charge e/2 abelian anyons which carry a neutral Dirac fermion zero mode. The superconducting proximity effect induces `tunneling' between `layers' which leads to topological phase transitions whereby the Dirac fermion zero mode fractionalizes and Majorana fermions emerge in the edge states. The charge e/2 vortex excitation carrying a Majorana zero mode is a non-abelian anyon. The proximity effect can also drive a conventional insulator into a quantum anomalous Hall effect state with a Majorana edge mode and the non-abelian vortex excitations.

cond-mat.str-el↗