arXiv subjects

X. Chen

Publications and source records attributed to X. Chen.

570 records · Page 32Linked to original sources

arXiv2005

A Study of Apparent Symmetry Breakdown in Perovskite Oxide-based Symmetric RRAM Devices

A new model of a symmetric two-terminal non-volatile RRAM device based on Perovskite oxide thin film materials, specifically Pr1-xCaxMnO3 (PCMO), is proposed and analyzed. The model consists of two identical half-parts, which are completely characterized by the same resistance verses pulse voltage hysteresis loop, connected together in series. Even though the modeled device is physically symmetric with respect to the direction of current, it is found to exhibit switching of the resistance with the application of voltage pulses of sufficient amplitude and of different polarities. The apparent breakdown of parity conservation of the device is attributed to changes in resistance of the active material layer near the electrodes during switching. Thus the switching is history dependent, a feature that can be very useful for the construction of real non-volatile memory devices. An actual symmetric device, not previously reported in the literature and based on the proposed model, is fabricated in the PCMO material system. Measurements of the resistance of this new device generated an experimental hysteresis curve that matches well the calculated hysteresis curve of the model, thus confirming the features predicated by the new symmetric model.

cond-mat.str-el↗

arXiv2005

Resistance profile measurements on a symmetric electrical pulse induced resistance change device

We report the first direct measurements of the micro scale resistance profile between the terminals of a two terminal symmetric thin film Pr0.7Ca0.3MnO3 electrical pulse induced resistance change device composed of a Pr0.7Ca0.3MnO3 active layer. The symmetric device is one in which the electrode shape, size, composition, and deposition processing are identical. We show that under certain limitations of pulse switching voltage, such a symmetric electrical pulse induced resistance change device can exhibit either no net device resistance switching at room temperature, or bipolar switching with the resistance hysteresis curve exhibiting a "table leg" structure. The resistance measurements are made using surface scanning Kelvin probe microscopy, which allows for the measurement of the profile of resistance from one electrode, across the Pr0.7Ca0.3MnO3 material and into the second electrode, both before resistance switching and after switching. The results show that resistance switching in the symmetric device occurs primarily in the interface region within about 1 to 3 micron of the electrical contact surface. Resistance switching is also observed in the bulk Pr0.7Ca0.3MnO3 material although at a lower level. Symmetry considerations for a two terminal symmetric device that can switch resistance are discussed, and the data reported here is consistent with the symmetric model previously developed.

cond-mat.str-el↗

arXiv2004

The Center of Activity in the CSS Superluminal Source 3C 138

We present the results from the first quasi-simultaneous multi-frequency (2.3, 5.0, 8.4 and 15 GHz) Very Long Baseline Interferometry (VLBI) observations of a compact steep spectrum (CSS) superluminal source 3C138. For the first time, the spectral distribution of the components within its central 10 milli-arcsecond (mas) region was obtained. This enables us to identify the component at the western end as the location of the nuclear activity on the assumption that the central engine is associated with one of the detected components. The possibility that none of these visible components is the true core is also discussed. The new measurements further clarify the superluminal motions of its inner jet components. The multi-frequency data reveal a convex spectrum in one jet component, inferring the existence of free-free absorption by the ambient dense plasma.

astro-ph↗

arXiv2004

Effects of chemical composition and thermohaline mixing on the accreting components for low--mass close binaries: application to blue stragglers

We studied the effects of surface composition and thermohaline mixing caused by secular instability on the accreting components for low--mass binaries and applied the results on a short-orbital-period BS F190 in the old cluster M67. The results indicate no distinction in surface composition between the models with and without thermohaline mixing during Roche lobe overflow, but we still see the divergences of evolutionary tracks on HRD and CMD. The change of surface composition makes the gainer bluer and smaller than the ones with original surface composition while thermohaline mixing lessens the effect slightly. If thermohaline mixing were to act instantaneously, the effect would be lessened more. Our calculation shows that case A and case B mass transfer may produce BSs in short- or relatively short-orbital-period binaries (including Algol systems), and that CNO abundance abnormalities could be observed in these products. Our simulation of F190 shows that the primary's mass $M_{\rm 1i}$ of the appropriate models is located in the range of 1.40 to 1.45$M_{\odot}$ with initial mass ratio $q_{\rm i}=1.5$ and initial orbital period $P_{\rm i}=0.8$ days, indicating that case A is a more likely evolutionary channel than case B to form this object. The simulation also shows that it is very likely that F190 is still in a slow stage of mass transfer. As a consequence, obvious CNO abundance abnormalities should be observed for the object.

astro-ph↗

arXiv2004

Raman spectra in epitaxial thin films $La_{1-x}Ca_xMnO_3$ (x = 0.33, 0.5) grown on different substrates

Raman spectra of LCMO films grown on LAO (001), STO (001), and MgO (001) substrates were studied at different temperatures. The effect of temperature, doping level and strain on Raman spectra are discussed in detail. With decreasing temperature, the changes of Raman spectra are correlated with the disorder-order transition, shuch as: paramagnetism to ferromagnetism, and charge-ordering. The strain induced by lattice-substrate mismatch affects the Raman spectra strongly. The mode induced by disorder of oxygen defects is apparently observed in $La_{0.67}Ca_{0.33}MnO_3$ film on STO due to the larger tensile strain. While this mode can not be seen in the Raman spectra for the films on LAO and MgO. A strong unsigned mode at about 690 $cm^{-1}$ is observed in all films except for $La_{0.67}Ca_{0.33}MnO_3$ film on LAO, which is not observed in bulk sample easily. It suggests that the mode is closely related to the strain.

cond-mat.str-el↗

arXiv2004

Water bath calorimetric study of excess heat generation in 'resonant transfer' plasmas

Water bath calorimetry was used to demonstrate one more peculiar phenomenon associated with a certain class of mixed gas plasmas termed resonant transfer, or RT plasmas. Specifically, He/H2 (10%) (500 mTorr), Ar/H2 (10%) (500 mTorr), and H2O(g) (500 and 200 mTorr) plasmas generated with an Evenson microwave cavity consistently yielded on the order of 50% more heat than non RT plasma (controls) such as He, Kr, Kr/H2 (10%), under identical conditions of gas flow, pressure, and microwave operating conditions. The excess power density of RT plasmas was of the order 10 W / cm-3. In earlier studies with these same RT plasmas it was demonstrated that other unusual features were present including dramatic broadening of the hydrogen Balmer series lines, unique vacuum ultraviolet (VUV) lines, and in the case of water plasmas, population inversion of the hydrogen excited states. Both the current results and the earlier results are completely consistent with the existence of a hitherto unknown exothermic chemical reaction, such as that predicted by Mills, occurring in RT plasmas.

physics.plasm-ph↗

arXiv2003

Growth and properties of ferromagnetic In(1-x)Mn(x)Sb alloys

We discuss a new narrow-gap ferromagnetic (FM) semiconductor alloy, In(1-x)Mn(x)Sb, and its growth by low-temperature molecular-beam epitaxy. The magnetic properties were investigated by direct magnetization measurements, electrical transport, magnetic circular dichroism, and the magneto-optical Kerr effect. These data clearly indicate that In(1-x)Mn(x)Sb possesses all the attributes of a system with carrier-mediated FM interactions, including well-defined hysteresis loops, a cusp in the temperature dependence of the resistivity, strong negative magnetoresistance, and a large anomalous Hall effect. The Curie temperatures in samples investigated thus far range up to 8.5 K, which are consistent with a mean-field-theory simulation of the carrier-induced ferromagnetism based on the 8-band effective band-orbital method.

cond-mat.mtrl-sci↗

arXiv2003

In(1-x)Mn(x)Sb - a new narrow gap ferromagnetic semiconductor

A narrow-gap ferromagnetic In(1-x)Mn(x)Sb semiconductor alloy was successfully grown by low-temperature molecular beam epitaxy on CdTe/GaAs hybrid substrates. Ferromagnetic order in In(1-x)Mn(x)Sb was unambiguously established by the observation of clear hysteresis loops both in direct magnetization measurements and in the anomalous Hall effect, with Curie temperatures T_C ranging up to 8.5 K. The observed values of T_C agree well with the existing models of carrier-induced ferromagnetism.

cond-mat.mtrl-sci↗

arXiv2002

Above-Room-Temperature Ferromagnetism in GaSb/Mn Digital Alloys

Digital alloys of GaSb/Mn have been fabricated by molecular beam epitaxy. Transmission electron micrographs showed good crystal quality with individual Mn-containing layers well resolved; no evidence of 3D MnSb precipitates was seen in as-grown samples. All samples studied exhibited ferromagnetism with temperature dependent hysteresis loops in the magnetization accompanied by metallic p-type conductivity with a strong anomalous Hall effect (AHE) up to 400 K (limited by the experimental setup). The anomalous Hall effect shows hysteresis loops at low temperatures and above room temperature very similar to those seen in the magnetization. The strong AHE with hysteresis indicates that the holes interact with the Mn spins above room temperature. All samples are metallic, which is important for spintronics applications. * To whom correspondence should be addressed. E-mail: luo@buffalo.edu

cond-mat.mtrl-sci↗

arXiv2001

Radiative Bulk Viscosity

Viscous resistance to changes in the volume of a gas arises when different degrees of freedom have different relaxation times. Collisions tend to oppose the resulting departures from equilibrium and, in so doing, generate entropy. Even for a classical gas of hard spheres, when the mean free paths or mean flight times of constituent particles are long, we find a nonvanishing bulk viscosity. Here we apply a method recently used to uncover this result for a classical rarefied gas to radiative transfer theory and derive an expression for the radiative stress tensor for a gray medium with absorption and Thomson scattering. We determine the transport coefficients through the calculation of the comoving entropy generation. When scattering dominates absorption, the bulk viscosity becomes much larger than either the shear viscosity or the thermal conductivity.

astro-ph↗

arXiv1999

Beam Test of Gamma-ray Large Area Space Telescope Components

A beam test of GLAST (Gamma-ray Large Area Space Telescope) components was performed at the Stanford Linear Accelerator Center in October, 1997. These beam test components were simple versions of the planned flight hardware. Results on the performance of the tracker, calorimeter, and anti-coincidence charged particle veto are presented.

physics.ins-det↗

arXiv1995

Is the Accretion Flow in NGC 4258 Advection-dominated?

The mass of the central black hole in the active galaxy NGC 4258 (M106) has been measured to be $M=3.6\times10^7\Msun$ (Miyoshi et al. 1995). The Eddington luminosity corresponding to this mass is $L_E=4.5\times10^{45}$ erg s$^{-1}$. By contrast the X-ray luminosity of the nucleus of NGC 4258 between $2-10$ keV is $(4\pm 1)\times10^{40}~{\rm erg\,s^{-1}}$ while the optical/UV luminosity is less than $1.5\times10^{42} ~{\rm erg\,s^{-1}}$. The luminosity of NGC 4258 is therefore extremely sub-Eddington, $L\sim10^{-5}L_E$ in X-rays and $L\sim3\times10^{-4} L_E$ even if we take the maximum optical/UV luminosity. Assuming the usual accretion efficiency of 0.1 would imply accretion rates orders of magnitude lower than in Seyfert galaxies and quasars. We show that the properties of the AGN in NGC 4258 can be explained by an accretion flow in the form of a very hot, optically-thin plasma which advects most of the viscously generated thermal energy into the central black hole and radiates only a small fraction of the energy. In this case the accretion rate in Eddington units could be as high as $\sim 0.16α$, where $α$ is the standard viscosity parameter; and the size of the hot disk should be larger than $\sim 10$ times the Schwarzschild radius. We compare the predictions of this model with observations and discuss its application to other low luminosity AGN.

astro-ph↗