arXiv subjects

X. Liu

Publications and source records attributed to X. Liu.

At least 343 records · Page 19Linked to original sources

arXiv2004

Systematic Extraction of Spectroscopic Factors from 12C(d,p)13C and 13C(p,d)12C Reactions

Existing measurements of the angular distributions of the ground-state to ground-state transitions of the 12C(d,p)13C and 13C(p,d)12C neutron-transfer reactions have been analyzed systematically using the Johnson-Soper adiabatic and distorted-wave theories. When using a consistent set of physical inputs the deduced spectroscopic factors are consistent to within 20% for incident deuteron energies from 6 to 60 MeV. By contrast, original analyses of many of these data quoted spectroscopic factors that differed by up to a factor of five. The present analysis provides an important reference point from which to assess the requirements of future spectroscopic analyses of transfer reactions measured in inverse kinematics using rare nuclei.

nucl-ex↗

arXiv2004

High-Temperature Hall Effect in Ga(1-x)Mn(x)As

The temperature dependence of the Hall coefficient of a series of ferromagnetic Ga(1-x)Mn(x)As samples is measured in the temperature range 80K < T < 500K. We model the Hall coefficient assuming a magnetic susceptibility given by the Curie-Weiss law, a spontaneous Hall coefficient proportional to rho_xx^2(T), and including a constant diamagnetic contribution in the susceptibility. For all low resistivity samples this model provides excellent fits to the measured data up to T=380K and allows extraction of the hole concentration (p). The calculated p are compared to alternative methods of determining hole densities in these materials: pulsed high magnetic field (up to 55 Tesla) technique at low temperatures (less than the Curie temperature), and electrochemical capacitance- voltage profiling. We find that the Anomalous Hall Effect (AHE) contribution to rho_xy is substantial even well above the Curie temperature. Measurements of the Hall effect in this temperature regime can be used as a testing ground for theoretical descriptions of transport in these materials. We find that our data are consistent with recently published theories of the AHE, but they are inconsistent with theoretical models previously used to describe the AHE in conventional magnetic materials.

cond-mat.mtrl-sci↗

arXiv2004

Aluminum Oxide Layers as Possible Components for Layered Tunnel Barriers

We have studied transport properties of Nb/Al/AlOx/Nb tunnel junctions with ultrathin aluminum oxide layers formed by (i) thermal oxidation and (ii) plasma oxidation, before and after rapid thermal post-annealing of the completed structures at temperatures up to 550 deg C. Post-annealing at temperatures above 300 deg C results in a significant decrease of the tunneling conductance of thermally-grown barriers, while plasma-grown barriers start to change only at annealing temperatures above 450 deg C. Fitting the experimental I-V curves of the junctions using the results of the microscopic theory of direct tunneling shows that the annealing of thermally-grown oxides at temperatures above 300 deg C results in a substantial increase of their average tunnel barriers height, from ~1.8 eV to ~2.45 eV, versus the practically unchanged height of ~2.0 eV for plasma-grown layers. This difference, together with high endurance of annealed barriers under electric stress (breakdown field above 10 MV/cm) may enable all-AlOx and SiO2/AlOx layered "crested" barriers for advanced floating-gate memory applications.

cond-mat.mtrl-sci↗

arXiv2004

Antiferromagnetic Ordering on CoO(001) Studied by Metastable Helium Beam Diffraction

Magnetic diffractive scattering of coherent metastable helium atomic beams from CoO(001) surfaces reveal the presence of an anomalous enhancement in the intensity of the half-order antiferromagnetic diffraction peak over the temperature range of 250-320K. Electronic cluster calculations based on Hartree-Fock states with configuration interactions, together with mean-field and Monte Carlo studies of this system suggest that this behavior is associated with low-lying surface spin excited states.

cond-mat.str-el↗

arXiv2004

Annealing-Dependent Magnetic Depth Profile in Ga[1-x]Mn[x]As

We have studied the depth-dependent magnetic and structural properties of as-grown and optimally annealed Ga[1-x]Mn[x]As films using polarized neutron reflectometry. In addition to increasing total magnetization, the annealing process was observed to produce a significantly more homogeneous distribution of the magnetization. This difference in the films is attributed to the redistribution of Mn at interstitial sites during the annealing process. Also, we have seen evidence of significant magnetization depletion at the surface of both as-grown and annealed films.

cond-mat.mtrl-sci↗

arXiv2003

A 4-unit-cell superstructure in optimally doped YBa2Cu3O6.92 superconductor

Using high-energy diffraction we show that a 4-unit-cell superstructure, q0=(1/4,0,0), along the shorter Cu-Cu bonds coexists with superconductivity in optimally doped YBCO. A complex set of anisotropic atomic displacements on neighboring CuO chain planes, BaO planes, and CuO2 planes, respectively, correlated over ~3-6 unit cells gives rise to diffuse superlattice peaks. Our observations are consistent with the presence of Ortho-IV nanodomains containing these displacements.

cond-mat.supr-con↗

arXiv2003

Electron-electron dynamics in laser-induced nonsequential double ionization

For the description of nonsequential double ionization (NSDI) of rare-gas atoms by a strong linearly polarized laser field, the quantum-mechanical $S$-matrix diagram that incorporates rescattering impact ionization is evaluated in the strong-field approximation. We employ a uniform approximation, which is a generalization of the standard saddle-point approximation. We systematically analyze the manifestations of the electron-electron interaction in the momentum distributions of the ejected electrons: for the interaction, by which the returning electron frees the bound electron, we adopt either a (three-body) contact interaction or a Coulomb interaction, and we do or do not incorporate the mutual Coulomb repulsion of the two electrons in their final state. In particular, we investigate the correlation of the momentum components parallel to the laser-field polarization, with the transverse momentum components either restricted to certain finite ranges or entirely summed over. In the latter case, agreement with experimental data is best for the contact interaction and without final-state repulsion. In the former, if the transverse momenta are restricted to small values, comparison of theory with the data shows evidence of Coulomb effects. We propose that experimental data selecting events with small transverse momenta of \textit{both} electrons are particularly promising in the elucidation of the dynamics of NSDI. Also, a classical approximation of the quantum-mechanical $S$ matrix is formulated and shown to work very well inside the classically allowed region.

physics.atom-ph↗

arXiv2003

Nonsequential double ionization with few-cycle laser pulses

We investigate differential electron distributions in nonsequential double ionization (NSDI) with linearly polarized, few-cycle pulses, using a classical model based on a laser-assisted inelastic $(e^-,2e^-)$ rescattering mechanism. We show that these yields, as functions of the momentum components parallel to the laser polarization, are highly asymmetric, and strongly influenced by the absolute phase, i.e., the phase difference between the carrier oscillation of a few-cycle laser pulse and its envelope. Indeed, around a critical phase, such distributions change their sign in a radical fashion. This phase dependence provides a possibility for absoute-phase measurements which is, in principle, superior to the schemes involving high-order harmonic generation or above-threshold ionization.

physics.atom-ph↗

arXiv2003

Magnetization relaxation in (Ga,Mn)As ferromagnetic semiconductors

We describe a theory of Mn local-moment magnetization relaxation due to p-d kinetic-exchange coupling with the itinerant-spin subsystem in the ferromagnetic semiconductor (Ga,Mn)As alloy. The theoretical Gilbert damping coefficient implied by this mechanism is calculated as a function of Mn moment density, hole concentration, and quasiparticle lifetime. Comparison with experimental ferromagnetic resonance data suggests that in annealed strongly metallic samples, p-d coupling contributes significantly to the damping rate of the magnetization precession at low temperatures. By combining the theoretical Gilbert coefficient with the values of the magnetic anisotropy energy, we estimate that the typical critical current for spin-transfer magnetization switching in all-semiconductor trilayer devices can be as low as $\sim 10^{5} {\rm A cm}^{-2}$.

cond-mat.mes-hall↗

arXiv2003

Coulomb repulsion and quantum-classical correspondence in laser-induced nonsequential double ionization

The influence of electron-electron Coulomb repulsion on nonsequential double ionization of rare-gas atoms is investigated. Several variants of the quantum-mechanical transition amplitude are evaluated that differ by the form of the inelastic electron-ion rescattering and whether or not Coulomb repulsion between the two electrons in the final state is included. For high laser intensity, an entirely classical model is formulated that simulates the rescattering scenario.

physics.atom-ph↗

arXiv2003

Anomalous behavior of spin wave resonances in Ga_{1-x}Mn_{x}As thin films

We report ferromagnetic and spin wave resonance absorption measurements on high quality epitaxially grown Ga_{1-x}Mn_{x}As thin films. We find that these films exhibit robust ferromagnetic long-range order, based on the fact that up to seven resonances are detected at low temperatures, and the resonance structure survives to temperatures close to the ferromagnetic transition. On the other hand, we observe a spin wave dispersion which is linear in mode number, in qualitative contrast with the quadratic dispersion expected for homogeneous samples. We perform a detailed numerical analysis of the experimental data and provide analytical calculations to demonstrate that such a linear dispersion is incompatible with uniform magnetic parameters. Our theoretical analysis of the ferromagnetic resonance data, combined with the knowledge that strain-induced anisotropy is definitely present in these films, suggests that a spatially dependent magnetic anisotropy is the most likely reason behind the anomalous behavior observed.

cond-mat↗

arXiv2003

External control of the direction of magnetization in ferromagnetic InMnAs/GaSb heterostructures

In this paper, we demonstrate external control over the magnetization direction in ferromagnetic (FM) In_{1-x}Mn_{x}As/GaSb heterostructures. FM ordering with T_C as high as 50 K is confirmed by SQUID magnetization, anomalous Hall effect (AHE), and magneto-optical Kerr effect (MOKE) measurements. Even though tensile strain is known to favor an easy axis normal to the layer plane, at low temperatures we observe that the magnetization direction in several samples is intermediate between the normal and in-plane axes. As the temperature increases, however, the easy axis rotates to the direction normal to the plane. We further demonstrate that the easy magnetization axis can be controlled by incident light through a bolometric effect, which induces a pronounced increase in the amplitude of the AHE. A mean-field-theory model for the carrier-mediated ferromagnetism reproduces the tendency for dramatic reorientations of the magnetization axis, but not the specific sensitivity to small temperature variations.

cond-mat.mtrl-sci↗

arXiv2003

Very large magnetoresistance in lateral ferromagnetic (Ga,Mn)As wires with nanoconstrictions

We have fabricated (Ga,Mn)As nanostructures in which domain walls can be pinned by sub-10 nm constrictions. Controlled by shape anisotropy, we can switch the regions on either side of the constriction to either parallel or antiparallel magnetization. All samples exhibit a positive magnetoresistance, consistent with domain-wall trapping. For metallic samples we find a magnetoresistance up to 8%, which can be understood from spin accumulation. In samples where, due to depletion at the constriction, a tunnel barrier is formed, we observe a magnetoresistance of up to 2000 %.

cond-mat.mes-hall↗

arXiv2003

The Effect of Mn Interstitials on the Lattice Parameter of Ga(1-x)Mn(x)As

Structural investigation of as-grown as well as annealed Ga(1-x)Mn(x)As epilayers was carried out using high resolution X-ray diffraction (XRD) measurements for a wide range of Mn concentrations (0.027<=x<=0.083), with special attention on how the interstitial Mn atoms (Mn_I) influence the lattice parameter of this material. We observe a distinct decrease of the lattice parameter after low temperature annealing of Ga(1-x)Mn(x)As, which is known to reduce the Mn_I concentration. The reciprocal space maps measured for all the investigated samples showed that the Ga(1-x)Mn(x)As layers are fully strained - i.e., they remain pseudomorphic to the GaAs (001) substrate - for the entire thickness of the samples used (in the present case over 100 nm). In all cases studied the XRD measurements revealed high crystalline perfection of both as-grown as well as annealed Ga(1-x)Mn(x)As epilayers

cond-mat↗

arXiv2003

Growth and properties of ferromagnetic In(1-x)Mn(x)Sb alloys

We discuss a new narrow-gap ferromagnetic (FM) semiconductor alloy, In(1-x)Mn(x)Sb, and its growth by low-temperature molecular-beam epitaxy. The magnetic properties were investigated by direct magnetization measurements, electrical transport, magnetic circular dichroism, and the magneto-optical Kerr effect. These data clearly indicate that In(1-x)Mn(x)Sb possesses all the attributes of a system with carrier-mediated FM interactions, including well-defined hysteresis loops, a cusp in the temperature dependence of the resistivity, strong negative magnetoresistance, and a large anomalous Hall effect. The Curie temperatures in samples investigated thus far range up to 8.5 K, which are consistent with a mean-field-theory simulation of the carrier-induced ferromagnetism based on the 8-band effective band-orbital method.

cond-mat.mtrl-sci↗

arXiv2003

Enhancement of Curie temperature in Ga(1-x)Mn(x)As/Ga(1-y)Al(y)As ferromagnetic heterostructures by Be modulation doping

The effect of modulation doping by Be on the ferromagnetic properties of Ga(1-x)Mn(x)As is investigated in Ga(1-x)Mn(x)As/Ga(1-y)Al(y)As heterojunctions and quantum wells. Introducing Be acceptors into the Ga(1-y)Al(y)As barriers leads to an increase of the Curie temperature T_C of Ga(1-x)Mn(x)As, from 70 K in undoped structures to over 100 K with the modulation doping. This increase is qualitatively consistent with a multi-band mean field theory simulation of carrier-mediated ferromagnetism. An important feature is that the increase of T_C occurs only in those structures where the modulation doping is introduced after the deposition of the magnetic layer, but not when the Be-doped layer is grown first. This behavior is expected from the strong sensitivity of Mn interstitial formation to the value of the Fermi energy during growth.

cond-mat.mtrl-sci↗

arXiv2003

Effect of annealing on magnetic and magnetotransport properties of Ga1-xMnxAs epilayers

High-field magnetic measurements performed with the use of magnetooptical Kerr effect (MOKE) in the polar configuration as well as high-field and low-field magnetotransport studies were carried out on Ga1-xMnxAs epilayers grown by low temperature molecular beam epitaxy, and subsequently annealed under various conditions. The structural investigations by means of high resolution XRD were also performed. We observe significant changes in magnetoresistivity curves, magnetization and strain introduced by the annealing.

cond-mat↗

arXiv2003

Fundamental Curie temperature limit in ferromagnetic GaMnAs

We provide experimental evidence that the upper limit of ~110 K commonly observed for the Curie temperature T_C of Ga(1-x)Mn(x)As is caused by the Fermi-level-induced hole saturation. Ion channeling, electrical and magnetization measurements on a series of Ga(1-x-y)Mn(x)Be(y)As layers show a dramatic increase of the concentration of Mn interstitials accompanied by a reduction of T_C with increasing Be concentration, while the free hole concentration remains relatively constant at ~5x10^20 cm^-3. These results indicate that the concentrations of free holes and ferromagnetically active Mn spins are governed by the position of the Fermi level, which controls the formation energy of compensating interstitial Mn donors.

cond-mat.mtrl-sci↗