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Xi Dai

Publications and source records attributed to Xi Dai.

At least 199 records · Page 11Linked to original sources

LDA+Gutzwiller Method for Correlated Electron Systems: Formalism and Its Applications

We introduce in detail our newly developed \textit{ab initio} LDA+Gutzwiller method, in which the Gutzwiller variational approach is naturally incorporated with the density functional theory (DFT) through the "Gutzwiller density functional theory (GDFT)" (which is a generalization of original Kohn-Sham formalism). This method can be used for ground state determination of electron systems ranging from weakly correlated metal to strongly correlated insulators with long-range ordering. We will show that its quality for ground state is as high as that by dynamic mean field theory (DMFT), and yet it is computationally much cheaper. In additions, the method is fully variational, the charge-density self-consistency can be naturally achieved, and the quantities, such as total energy, linear response, can be accurately obtained similar to LDA-type calculations. Applications on several typical systems are presented, and the characteristic aspects of this new method are clarified. The obtained results using LDA+Gutzwiller are in better agreement with existing experiments, suggesting significant improvements over LDA or LDA+U.

cond-mat.str-el↗

Topological Insulators at Room Temperature

Topological insulators are new states of quantum matter with surface states protected by the time-reversal symmetry. In this work, we perform first-principle electronic structure calculations for $Sb_2Te_3$, $Sb_2Se_3$, $Bi_2Te_3$ and $Bi_2Se_3$ crystals. Our calculations predict that $Sb_2Te_3$, $Bi_2Te_3$ and $Bi_2Se_3$ are topological insulators, while $Sb_2Se_3$ is not. In particular, $Bi_2Se_3$ has a topologically non-trivial energy gap of $0.3 eV$, suitable for room temperature applications. We present a simple and unified continuum model which captures the salient topological features of this class of materials. These topological insulators have robust surface states consisting of a single Dirac cone at the $Γ$ point.

cond-mat.mes-hall↗

High pressure study on LaFeAsO with different Tc

We report studies on pressure dependence of superconducting transition temperature (Tc) of LaFeAsO, LaFeAs(O0.5F0.5) and LaFeAs(O0.89F0.11) samples. In-situ resistance measurements under high pressure showed that the Tc of these three compounds increases with pressure initially, reaches a maximum value and then decreases with further increasing pressure, although the Tc at ambient pressure are different. The onset Tc of LaFeAsO is ~50 K at 1.5 GPa, which is the highest record in La-based oxypnicited system. The significant change in Tc induced by pressure is attributed to the orbital degeneracy and the electron density of state at the Fermi level.

cond-mat.supr-con↗

Electron-hole Asymmetry and Quantum Critical Point in Hole-doped BaFe$_2$As$_2$

We show, from first-principles calculations, that the hole-doped side of FeAs-based compounds is different from its electron-doped counterparts. The electron side is characterized as Fermi surface nesting, and SDW-to-NM quantum critical point (QCP) is realized by doping. For the hole-doped side, on the other hand, orbital-selective partial orbital ordering develops together with checkboard antiferromagnetic (AF) ordering without lattice distortion. A unique SDW-to-AF QCP is achieved, and $J_2$=$J_1/2$ criteria (in the approximate $J_1&J_2$ model) is satisfied. The observed superconductivity is located in the vicinity of QCP for both sides.

cond-mat.supr-con↗

Doping-dependent Phase Diagram of LaO{\it M}As ({\it M}=V--Cu) and Electron-type Superconductivity near Ferromagnetic Instability

By first-principles calculations, we present a doping-dependent phase diagram of LaO{\it M}As ({\it M}=V--Cu) family. It is characterized as antiferromagnetic semiconductor around LaOMnAs side and ferromagnetic metal around LaOCoAs. Both LaOFeAs and LaONiAs, where superconductivity were discovered, are located at the borderline of magnetic phases. Extensive Fermi surface analysis suggests that the observed superconductivity is of electron-type in its origin. We discuss possible pairing mechanisms in the context of competing ferromagnetic phases found in this work and the ferromagnetic spin fluctuations.

cond-mat.supr-con↗

Magnetism of Cold Fermionic Atoms on p-Band of an Optical Lattice

We carry out \textit{ab initio} study of ground state phase diagram of spin-1/2 cold fermionic atoms within two-fold degenerate $p$-band of an anisotropic optical lattice. Using the Gutzwiller variational approach, we show that a robust ferromagnetic phase exists for a vast range of band fillings and interacting strengths. The ground state crosses over from spin density wave state to spin-1 Neel state at half filling. Additional harmonic trap will induce spatial separation of varies phases. We also discuss several relevant observable consequences and detection methods. Experimental test of the results reported here may shed some light on the long-standing issue of itinerant ferromagnetism.

cond-mat.str-el↗

Classification of the Super-conducting order parameters under the point group symmetry for a multi-band system: application to LaOFeAs

All the possible super-conducting order parameters for the LaOFeAs system are classified by their transformation under the complete crystal symmetry. The general forms of the super-conducting gap functions for each class are discussed. We find that the gap functions in such a multi-band system belong to three types, full gap, nodal type and finite {}``Fermi arc'' type. Possible physical consequences caused by different types of gap functions are also discussed.

cond-mat.supr-con↗

Enhanced Orbital Degeneracy in Momentum Space for LaOFeAs

The Fermi surfaces (FS) of LaOFeAs (in $k_z$=0 plane) consist of two hole-type circles around $Γ$ point, which do not touch each other, and two electron-type co-centered ellipses around M point, which are degenerate along the M-X line. By first-principles calculations, here we show that additional degeneracy exists for the two electron-type FS, and the crucial role of F-doping and pressure is to enhance this orbital degeneracy. It is suggested that the inter-orbital fluctuation is the key point to understand the unconventional superconductivity in these materials.

cond-mat.supr-con↗

Even Parity, Orbital Singlet and Spin Triplet Pairing for Superconducting $La(O_{1-x}F_x)FeAs$

In the present paper, we propose the parity even,orbital singlet and spin triplet pairing state as the ground state of the newly discovered super-conductor $LaO_{1-x}F_xFeAs$.The pairing mechanism involves both the special shape of the electron fermi surface and the strong ferromagnetic fluctuation induced by Hund's rule coupling.The special behavior of the Bogoliubov quasi-particle spectrum may leads to "Fermi arc" like anisotropy super-conducting gap, which can be detected by angle resolved photo emission(ARPES).The impurity effects are also discussed.

cond-mat.supr-con↗

Quantum Anomalous Hall Effect in Hg$_{1-y}$Mn$_{y}$Te Quantum Wells

The quantum Hall effect is usually observed when the two-dimensional electron gas is subjected to an external magnetic field, so that their quantum states form Landau levels. In this work we predict that a new phenomenon, the quantum anomalous Hall effect, can be realized in Hg$_{1-y}$Mn$_{y}$Te quantum wells, without the external magnetic field and the associated Landau levels. This effect arises purely from the spin polarization of the $Mn$ atoms, and the quantized Hall conductance is predicted for a range of quantum well thickness and the concentration of the $Mn$ atoms. This effect enables dissipationless charge current in spintronics devices.

cond-mat.mes-hall↗

Phase Diagram of Na$_x$CoO$_2$ Studied by Gutzwiller Density Functional Theory

The ground states of Na$_x$CoO$_2$ ($0.0 0.6$ due to $a_{1g}$ van-Hove singularity near band top; (2) correlated non-magnetic metal without $e_g^{\prime}$ pockets for $0.3<x<0.6$; (3) $e_g^{\prime}$ pockets appear for $x<0.3$, and additional magnetic instability involves. Experimental quasi-particle properties is well explained, and the $a_{1g}$-$e_g^{\prime}$ anti-crossing is attributed to spin-orbital coupling.

cond-mat.str-el↗

LDA+Gutzwiller Method for Correlated Electron Systems

Combining the density functional theory (DFT) and the Gutzwiller variational approach, a LDA+Gutzwiller method is developed to treat the correlated electron systems from {\it ab-initio}. All variational parameters are self-consistently determined from total energy minimization. The method is computationally cheaper, yet the quasi-particle spectrum is well described through kinetic energy renormalization. It can be applied equally to the systems from weakly correlated metals to strongly correlated insulators. The calculated results for SrVO$_3$, Fe, Ni and NiO, show dramatic improvement over LDA and LDA+U.

cond-mat.str-el↗

Josephson Diode

We propose a new type of Josephson junction formed by two superconductors close to the superconductor-Mott-insulator transition, one of which is doped with holes and the other is doped with electrons. A self-organized Mott-insulating depletion region is formed at the interface between two superconductors, giving rise to an asymmetric response of current to the external voltage. The collective excitations of the depletion region result in a novel phase dynamics that can be measured experimentally in the noise spectrum of the Josephson current.

cond-mat.str-el↗

Helical edge and surface states in HgTe quantum wells and bulk insulators

The quantum spin Hall (QSH) effect is the property of a new state of matter which preserves time-reversal, has an energy gap in the bulk, but has topologically robust gapless states at the edge. Recently, it has been shown that HgTe quantum wells realize this novel effect. In this work, we start from realistic tight-binding models and demonstrate the existence of the helical edge states in HgTe quantum wells and calculate their physical properties. We also show that 3d HgTe is a topological insulator under uniaxial strain, and show that the surface states are described by single-component massless relativistic Dirac fermions in 2+1 dimensions. Experimental predictions are made based on the quantitative results obtained from realistic calculations.

cond-mat.mes-hall↗

Mott Insulator - Superfluid Transitions in a Two Band Model at Finite Temperature and Possible Application to Supersolid 4He

We study Mott insulator - superfluid transition in a two-band boson Hubbard model, which can be mapped onto a spin-1/2 XY model with spins coupled to an additional Ising degree of freedom. By using a modified mean field theory that include the effects of phase fluctuations, we show that the transition is first order at both zero and finite temperatures. On the Mott insulator side, there may be reentrance in phase transition. These features are consequences of the underlying transition between competing defect poor and defect rich phases. The relevance of the model and our results to supersolid 4He and cold bosonic atoms in optical lattices are discussed.

cond-mat.stat-mech↗

The Orbital Selective Mott Transition in a Three Band Hubbard model: a Slave Boson Mean Field Study

In the present paper, we systematically studied the possible Orbital selective Mott transition (OSMT) in the $t_{2g}$ system, which has three orbital degeneracy. The slave Boson mean field theory is generalized to the three band systems with full Hund's rule coupling including spin flip and pair hopping terms. A new type of Mott transition which is driven by the crystal field splitting or the lattice distortion is found is this model. We argue that this new type of Mott transition may relate to the puzzling phase in $Sr_{x}Ca_{2-x}RuO_4$.

cond-mat.str-el↗

Light Induced Hall effect in semiconductors with spin-orbit coupling

We show that optically excited electrons by a circularly polarized light in a semiconductor with spin-orbit coupling subject to a weak electric field will carry a Hall current transverse to the electric field. This light induced Hall effect is a result of quantum interference of the light and the electric field, and can be viewed as a physical consequence of the spin current induced by the electric field. The light induced Hall conductance is calculated for the p-type GaAs bulk material, and the n-type and p-type quantum well structures.

cond-mat.mes-hall↗

Transverse electric current induced by optically injected spin current in cross-shaped InGaAs/InAlAs system

We examine electric response of a linearly polarized light normally shed on a cross-shaped quasi 2-dimensional InGaAs/InAlAs system with structure inversion asymmetry. The photo-excited conduction electrons carry a pure spin current with in-plane spin polarization due to the Rashba spin-orbit interaction. We use Landauer-Büttiker formalism to show that this spin current induces two inward or outward transverse charge currents, which are observable in experiments. This effect may serve as an experimental probe of certain types of spin current.

cond-mat.mes-hall↗