arXiv subjects

Xiaoming Xie

Publications and source records attributed to Xiaoming Xie.

At least 37 records · Page 2Linked to original sources

arXiv2017

Oriented Graphene Nanoribbons Embedded in Hexagonal Boron Nitride Trenches

Graphene nanoribbons (GNRs) are ultra-narrow strips of graphene that have the potential to be used in high-performance graphene-based semiconductor electronics. However, controlled growth of GNRs on dielectric substrates remains a challenge. Here, we report the successful growth of GNRs directly on hexagonal boron nitride substrates with smooth edges and controllable widths using chemical vapour deposition. The approach is based on a type of template growth that allows for the in-plane epitaxy of mono-layered GNRs in nano-trenches on hexagonal boron nitride with edges following a zigzag direction. The embedded GNR channels show excellent electronic properties, even at room temperature. Such in-plane hetero-integration of GNRs, which is compatible with integrated circuit processing, creates a gapped channel with a width of a few benzene rings, enabling the development of digital integrated circuitry based on GNRs.

cond-mat.mes-hall↗

arXiv2017

Realization of Quantum Spin Hall State in Monolayer 1T'-WTe2

A quantum spin Hall (QSH) insulator is a novel two-dimensional quantum state of matter that features quantized Hall conductance in the absence of magnetic field, resulting from topologically protected dissipationless edge states that bridge the energy gap opened by band inversion and strong spin-orbit coupling. By investigating electronic structure of epitaxially grown monolayer 1T'-WTe2 using angle-resolved photoemission (ARPES) and first principle calculations, we observe clear signatures of the topological band inversion and the band gap opening, which are the hallmarks of a QSH state. Scanning tunneling microscopy measurements further confirm the correct crystal structure and the existence of a bulk band gap, and provide evidence for a modified electronic structure near the edge that is consistent with the expectations for a QSH insulator. Our results establish monolayer 1T'-WTe2 as a new class of QSH insulator with large band gap in a robust two-dimensional materials family of transition metal dichalcogenides (TMDCs).

cond-mat.mtrl-sci↗

arXiv2016

Lithium-ion-based solid electrolyte tuning of the carrier density in graphene

We have developed a technique to tune the carrier density in graphene using a lithium-ion-based solid electrolyte. We demonstrate that the solid electrolyte can be used as both a substrate to support graphene and a back gate.It can induce a change in the carrier density as large as 1*10^14/cm^2, which is much larger than that induced with oxide-film dielectrics, and it is comparable with that induced by liquid electrolytes. Gate modulation of the carrier density is still visible at 150 K, which is lower than the glass transition temperature of most liquid gating electrolytes.

cond-mat.mtrl-sci↗

arXiv2016

Growth and characterization of CaFe$_{1-x}$Co$_x$AsF single crystals by CaAs flux method

Millimeter sized single crystals of CaFe$_{1-x}$Co$_x$AsF were grown using a self-flux method. It is found that high-quality single crystals can be grown from three approaches with different initial raw materials. The chemical compositions and crystal structure were characterized carefully. The c-axis lattice constant is suppressed by the Co substitution. Superconductivity with the critical transition $T_c$ as high as 21 K was confirmed by both the resistivity and magnetic susceptibility measurements in the sample with $x$ = 0.12. Moreover, it is found that $T_c$ can be enhanced for about 1 K under the very small hydrostatic pressure of 0.22 GPa, which is more quickly than that reported in the polycrystalline samples. Our results is a promotion for the physical investigations of 1111 phase iron-pnictide superconductors.

cond-mat.supr-con↗

arXiv2016

A combined method for synthesis of superconducting Cu doped Bi2Se3

We present a two-step technique for the synthesis of superconducting CuxBi2Se3. Cu0.15Bi2Se3 single crystals were synthesized using the melt-growth method. Although these samples are non-superconducting, they can be employed to generate high quality superconducting samples if used as precursors in the following electrochemical synthesis step. Samples made from Cu0.15Bi2Se3 reliably exhibit zero-resistance even under the non-optimal quenching condition, while samples made from pristine Bi2Se3 require fine tuning of the quenching conditions to achieve similar performance. Moreover, under the optimal quenching condition, the average superconducting shielding fraction was still lower in the samples made from pristine Bi2Se3 than in the samples made from Cu0.15Bi2Se3. These results suggest that the pre-doped Cu atoms facilitate the formation of a superconducting percolation network. We also discuss the useful clues that we gathered about the locations of Cu dopants that are responsible for superconductivity.

cond-mat.supr-con↗

arXiv2016

Superconducting nanowire single photon detector at 532 nm and demonstration in satellite laser ranging

Superconducting nanowire single-photon detectors (SNSPDs) at a wavelength of 532 nm were designed and fabricated aiming to satellite laser ranging (SLR) applications. The NbN SNSPDs were fabricated on one-dimensional photonic crystals with a sensitive-area diameter of 42 um. The devices were coupled with multimode fiber (phi=50um) and exhibited a maximum system detection efficiency of 75% at an extremely low dark count rate of <0.1 Hz. An SLR experiment using an SNSPD at a wavelength of 532 nm was successfully demonstrated. The results showed a depth ranging with a precision of ~8.0 mm for the target satellite LARES, which is ~3,000 km away from the ground ranging station at the Sheshan Observatory.

cond-mat.supr-con↗

arXiv2016

The effects of electron correlation and spin-orbit coupling in the isovalent Pd-doped superconductor SrPt$_3$P

We present a systematical study on the roles of electron correlation and spin-orbit coupling in the isovalent Pd-doped superconductor SrPt$_3$P. By using solid state reaction method, we fabricated the strong spin-orbit coupling superconductors Sr(Pt$_{1-x}$Pd$_x$)$_3$P with strong electron correlated Pd dopant of the $4d$ orbital. As increasing the isovalent Pd concentrations without introducing any extra electron/hole carriers, the superconducting transition temperature $T_c$ decreases monotonously, which suggests the existence of competition between spin-orbit coupling and electron correlation in the superconducting state. In addition, the electronic band structure calculations demonstrate that the strength of electron susceptibility is suppressed gradually by the Pd dopant suggesting the incompatible relation between spin-orbit coupling and electron correlation, which is also consistent with experimental measurements. Our results provide significant insights in the natures of the interplay between the spin-orbit coupling and the electron correlation in superconductivity, and may pave a way for understanding the mechanism of superconductivity in this 5d-metal-based compound.

cond-mat.supr-con↗

arXiv2015

Gap Structure of the Overdoped Iron-Pnictide Superconductor Ba(Fe$_{0.942}$Ni$_{0.058}$)$_{2}$As$_{2}$: A Low-Temperature Specific-Heat Study

Low-temperature specific heat (SH) is measured on the postannealed Ba(Fe_{1-x}Ni_x)_2As_2 single crystal with x = 0.058 under different magnetic fields. The sample locates on the overdoped sides and the critical transition temperature is determined to be 14.8 K by both the magnetization and SH measurements. A simple and reliable analysis shows that, besides the phonon and normal electronic contributions, a clear T2 termemerges in the low temperature SH data.Our observation is similar to that observed in the Co-doped system in our previous work and is consistent with the theoretical prediction for a superconductor with line nodes in the energy gap.

cond-mat.supr-con↗

arXiv2015

Large-sensitive-area superconducting nanowire single-photon detector at 850 nm with high detection efficiency

Satellite-ground quantum communication requires single-photon detectors of 850-nm wavelength with both high detection efficiency and large sensitive area. We developed superconducting nanowire single-photon detectors (SNSPDs) on one-dimensional photonic crystals, which acted as optical cavities to enhance the optical absorption, with a sensitive-area diameter of 50 um. The fabricated multimode fiber coupled NbN SNSPDs exhibited a maximum system detection efficiency (DE) of up to 82% and a DE of 78% at a dark count rate of 100 Hz at 850-nm wavelength as well as a system jitter of 105 ps.

physics.optics↗

arXiv2015

Growth and Characterization of Millimeter-sized Single Crystals of CaFeAsF

High-quality and sizable single crystals are crucial for studying the intrinsic properties of unconventional superconductors, which are lacking in the 1111 phase of the Fe-based superconductors. Here we report the successful growth of CaFeAsF single crystals with the sizes of 1-2 mm using the self-flux method. Owning to the availability of the high-quality single crystals, the structure and transport properties were investigated with a high reliability. The structure was refined by using the single-crystal x-ray diffraction data, which confirms the reports earlier on the basis of powder data. A clear anomaly associated with the structural transition was observed at 121 K from the resistivity, magnetoresistance, and magnetic susceptibility measurements. Another kink-feature at 110 K, most likely an indication of the antiferromagnetic transition, was also detected in the resistivity data. Our results supply a basis to propel the physical investigations on the 1111 phase of the Fe-based superconductors.

cond-mat.supr-con↗

arXiv2015

Dark counts of superconducting nanowire single-photon detector under illumination

An abnormal increase in the SDE was observed for superconducting nanowire single-photon detectors (SNSPDs) when the bias current (Ib) was close to the switching current (Isw). By introducing the time-correlated single-photon counting technique, we investigated the temporal histogram of the detection counts of an SNSPD under illumination. The temporal information helps us to distinguish photon counts from dark counts in the time domain. In this manner, the dark count rate (DCR) under illumination and the accurate SDE can be determined. The DCR under moderate illumination may be significantly larger than the conventional DCR measured without illumination under a high Ib, which causes the abnormal increase in the SDE. The increased DCR may be explained by the suppression of Isw under illumination.

physics.optics↗

arXiv2015

Synthesis of large single-crystal hexagonal boron nitride grains on Cu-Ni alloy

Hexagonal boron nitride (h-BN) has attracted significant attention due to its superior properties as well as its potential as an ideal dielectric layer for graphene-based devices. The h-BN films obtained via chemical vapor deposition in earlier reports are always polycrystalline with small grains due to high nucleation density on substrates. Here we report the successful synthesis of large single-crystal h-BN grains on rational designed Cu-Ni alloy foils. It is found that the nucleation density can be greatly reduced to 60 per mm2 by optimizing Ni ratio in substrates. The strategy enables the growth of single-crystal h-BN grains up to 7,500 um2, about 2 orders larger than that in previous reports. This work not only provides valuable information for understanding h-BN nucleation and growth mechanisms, but also gives an effective alternative to exfoliated h-BN as a high-quality dielectric layer for large-scale nano-electronic applications.

cond-mat.mtrl-sci↗

arXiv2015

Silane-Catalyzed Fast Growth of Large Single-Crystalline Graphene on Hexagonal Boron Nitride

The direct growth of high-quality, large single-crystalline domains of graphene on a dielectric substrate is of vital importance for applications in electronics and optoelectronics. Traditionally, graphene domains grown on dielectrics are typically only ~1 nm with a growth rate of ~1 nm/min or less, the main reason is the lack of a catalyst. Here we show that silane, serving as a gaseous catalyst, is able to boost the graphene growth rate to ~1 um/min, thereby promoting graphene domains up to 20 um in size to be synthesized via chemical vapor deposition on hexagonal boron nitride. Hall measurements show that the mobility of the sample reaches 20,000 cm2/Vs at room temperature, which is among the best for CVD-grown graphene. Combining the advantages of both catalytic CVD and the ultra-flat dielectric substrate, gaseous catalyst-assisted CVD paves the way for synthesizing high-quality graphene for device applications while avoiding the transfer process.

cond-mat.mtrl-sci↗

arXiv2014

Synthesis, Structural, and Transport Properties of Cr-doped BaTi_2As_2O

The interplay between unconventional superconductivity and the ordering of charge/spin density wave is one of the most vital issues in both condensed matter physics and material science. The Ti-based compound BaTi_2As_2O, which can be seen as the parent phase of superconducting BaTi_2Sb_2O, has a layered structure with a space group P4/mmm, similar to that of cuprate and iron-based superconductors. This material exhibits a charge density wave (CDW) ordering transition revealed by an anomaly at around 200 K in transport measurements. Here, we report the synthesis and systematical study of the physical properties in Cr-doped BaTi_{2-x}Cr_xAs_2O (x = 0 - 0.154), and demonstrate that the transition temperature of the CDW ordering is suppressed gradually by the doped Cr element. The magnetization measurements confirm the evolution of the CDW ordering transition. These observed behaviors are similar to that observed in iron-based superconductors, but no superconductivity emerges down to 2 K. In addition, the first-principles calculations are also carried out for well-understanding the nature of experimental observations.

cond-mat.supr-con↗

arXiv2014

High-T_c superconductivity in ultrathin Bi_2Sr_2CaCu_2O_8+x down to halfunit-cell thickness by protection with graphene

High-T_c superconductors confined to two dimension exhibit novel physical phenomena, such as superconductor-insulator transition. In the Bi_2Sr_2CaCu_2O_8+x (Bi2212) model system, despite extensive studies, the intrinsic superconducting properties at the thinness limit have been difficult to determine. Here we report a method to fabricate high quality single-crystal Bi2212 films down to half-unit-cell thickness in the form of graphene/Bi2212 van der Waals heterostructure, in which sharp superconducting transitions are observed. The heterostructure also exhibits a nonlinear current-voltage characteristic due to the Dirac nature of the graphene band structure. More interestingly, although the critical temperature remains essentially the same with reduced thickness of Bi2212, the slope of the normal state T-linear resistivity varies by a factor of 4-5, and the sheet resistance increases by three orders of magnitude, indicating a surprising decoupling of the normal state resistance and superconductivity. The developed technique is versatile, applicable to investigate other two-dimensional (2D) superconducting materials.

cond-mat.supr-con↗

arXiv2014

Nonideal optical cavity structure of superconducting nanowire single photon detector

Optical cavity structure has been proven to be a crucial factor for obtaining high detection efficiency in superconducting nanowire single photon detector (SNSPD). Practically, complicated fabrication processes may result in a non-ideal optical cavity structure. The cross-sectional transmission electron microscope (TEM) image of SNSPD fabricated in this study shows unexpected arc-shaped optical cavities which could have originated due to the over-etching of SiO2 layer while defining NbN nanowire. The effects of the arc-shaped optical cavity structure, such as the wavelength dependence of the optical absorption efficiency for different polarization, were analyzed by performing optical simulations using finite-difference time-domain method. The central wavelength of the device is found to exhibit a blue shift owing to the arced cavity structure. This effect is equivalent to the flat cavity with a reduced height. The results may give interesting reference for SNSPD design and fabrication.

cond-mat.supr-con↗

arXiv2014

Phase Diagram and Weak-link Behavior in Nd-doped CaFe_2As_2

The transport properties, phase diagram, and dopant distribution are investigated in systematically Nd doped CaFe_2As_2 single crystals. Coexistence of two superconducting (SC) phases with different critical transition temperature (T_c) is observed. The low-T_c phase emerges as x >= 0.031, and the T_c value increases to its maximum value of about 20 K at x = 0.083, the maximum doping level in our study. As x >= 0.060, the high-T_c phase with a T_c value of about 40 K is observed. The structure transition (STr) from tetragonal to orthorhombic phase vanishes suddenly around x = 0.060, where a new STr from tetragonal to collapsed tetragonal phase begins to turn up. Compared to the low-T_c phase, the end point of SC transition of the high-T_c phase is more sensitive to the magnetic field, showing a characteristic of Josephson weak-link behavior. Possible scenarios about this system are discussed based on our observations. We also find that the non-uniform SC properties cannot be attributed to the heterogeneous Nd distribution on the micro scale, as revealed by the detailed energy dispersive X-ray spectroscopy (EDS) measurements.

cond-mat.supr-con↗

arXiv2014

Superconducting nanowire single photon detector with on-chip bandpass filter

Dark count rate is one of the key parameters limiting the performance of the superconducting nanowire single photon detector (SNSPD). We have designed a multi-layer film bandpass filter that can be integrated onto the SNSPD to suppress the dark counts contributed by the stray light and blackbody radiation of the fiber. The bandpass filter is composed of 16 SiO2/Si bilayers deposited onto the backside of a thermally oxidized Si substrate. The substrate shows an excellent bandpass filter effect and provides a high transmittance of 88% at the central wavelength of the pass band, which is the same as that of the bare substrate. The SNSPDs fabricated on the substrate integrated with the bandpass filter show conspicuous wavelength-sensitive detection efficiency. The background dark count rate is reduced by two orders of magnitude to sub-Hz compared with the conventional SNSPD (a few tens of Hz). The detector exhibits a system detection efficiency of 56% at DCR of 1 Hz, with the measured minimal noise equivalent power reaching 2e-19 w/Hz1/2.

cond-mat.supr-con↗