arXiv subjects

Xiaoning Wang

Publications and source records attributed to Xiaoning Wang.

47 records · Page 3Linked to original sources

arXiv2021

Electric-Field-Controlled Antiferromagnetic Spintronic Devices

In recent years, the field of antiferromagnetic spintronics has been substantially advanced. Electric-field control is a promising approach to achieving ultra-low power spintronic devices via suppressing Joule heating. In this article, cutting-edge research, including electric-field modulation of antiferromagnetic spintronic devices using strain, ionic liquids, dielectric materials, and electrochemical ionic migration, are comprehensively reviewed. Various emergent topics such as the Neel spin-orbit torque, chiral spintronics, topological antiferromagnetic spintronics, anisotropic magnetoresistance, memory devices, two-dimensional magnetism, and magneto-ionic modulation with respect to antiferromagnets are examined. In conclusion, we envision the possibility of realizing high-quality room-temperature antiferromagnetic tunnel junctions, antiferromagnetic spin logic devices, and artificial antiferromagnetic neurons. It is expected that this work provides an appropriate and forward-looking perspective that will promote the rapid development of this field.

cond-mat.mes-hall↗

arXiv2021

Giant Piezospintronic Effect in a Noncollinear Antiferromagnetic Metal

One of the main bottleneck issues for room-temperature antiferromagnetic spintronic devices is the small signal read-out owing to the limited anisotropic magnetoresistance in antiferromagnets. However, this could be overcome by either utilizing the Berry-curvature-induced anomalous Hall resistance in noncollinear antiferromagnets or establishing tunnel junction devices based on effective manipulation of antiferromagnetic spins. In this work, we demonstrate the giant piezoelectric strain control of the spin structure and the anomalous Hall resistance in a noncollinear antiferromagnetic metal - D019 hexagonal Mn3Ga. Furthermore, we built tunnel junction devices with a diameter of 200 nm to amplify the maximum tunneling resistance ratio to more than 10% at room-temperature, which thus implies significant potential of noncollinear antiferromagnets for large signal-output and high-density antiferromagnetic spintronic device applications.

cond-mat.mes-hall↗

arXiv2021

Negligible oxygen vacancies, low critical current density, electric-field modulation, in-plane anisotropic and high-field transport of a superconducting Nd0.8Sr0.2NiO2/SrTiO3 heterostructure

The emerging Ni-based superconducting oxide thin films are rather intriguing to the entire condensed matter physics. Here we report some brief experimental results on transport measurements for a 14-nm-thick superconducting Nd0.8Sr0.2NiO2/SrTiO3 thin-film heterostructure with an onset transition temperature of ~9.5 K. Photoluminescence measurements reveal that there is negligible oxygen vacancy creation in the SrTiO3 substrate during thin-film deposition and post chemical reduction for the Nd0.8Sr0.2NiO2/SrTiO3 heterostructure. It was found that the critical current density of the Nd0.8Sr0.2NiO2/SrTiO3 thin-film heterostructure is relatively small, ~4x10^3 A/cm2. Although the surface steps of SrTiO3 substrates lead to an anisotropy for in-plane resistivity, the superconducting transition temperatures are almost the same. The out-of-plane magnetotransport measurements yield an upper critical field of ~11.4 T and an estimated in-plane Ginzburg-Landau coherence length of ~5.4 nm. High-field magnetotransport measurements up to 50 T reveal anisotropic critical fields at 1.8 K for three different measurement geometries and a complicated Hall effect. An electric field applied via the SrTiO3 substrate slightly varies the superconducting transition temperature. These experimental results could be useful for this rapidly developing field.

cond-mat.supr-con↗

arXiv2021

Observation of the Anomalous Hall Effect in a Collinear Antiferromagnet

Time-reversal symmetry breaking is the basic physics concept underpinning many magnetic topological phenomena such as the anomalous Hall effect (AHE) and its quantized variant. The AHE has been primarily accompanied by a ferromagnetic dipole moment, which hinders the topological quantum states and limits data density in memory devices, or by a delicate noncollinear magnetic order with strong spin decoherence, both limiting their applicability. A potential breakthrough is the recent theoretical prediction of the AHE arising from collinear antiferromagnetism in an anisotropic crystal environment. This new mechanism does not require magnetic dipolar or noncollinear fields. However, it has not been experimentally observed to date. Here we demonstrate this unconventional mechanism by measuring the AHE in an epilayer of a rutile collinear antiferromagnet RuO$_2$. The observed anomalous Hall conductivity is large, exceeding 300 S/cm, and is in agreement with the Berry phase topological transport contribution. Our results open a new unexplored chapter of time-reversal symmetry breaking phenomena in the abundant class of collinear antiferromagnetic materials.

cond-mat.mtrl-sci↗

arXiv2021

A two-dimensional electron gas based on a 5s oxide with high room-temperature mobility and strain sensitivity

The coupling of optical and electronic degrees of freedom together with quantum confinement in low-dimensional electron systems is particularly interesting for achieving exotic functionalities in strongly correlated oxide electronics. Recently, high room-temperature mobility has been achieved for a large bandgap transparent oxide - BaSnO$_3$ upon extrinsic La or Sb doping, which has excited significant research attention. In this work, we report the observation of room-temperature ferromagnetism in BaSnO$_3$ thin films and the realization of a two-dimensional electron gas (2DEG) on the surface of transparent BaSnO$_3$ via oxygen vacancy creation, which exhibits a high carrier density of $\sim 7.72*10^{14} /{\rm cm}^2$ and a high room-temperature mobility of ~18 cm$^2$/V/s. Such a 2DEG is rather sensitive to strain and a less than 0.1% in-plane biaxial compressive strain leads to a giant resistance enhancement of 350% (more than 540 kOhm/Square) at room temperature. Thus, this work creates a new path to exploring the physics of low-dimensional oxide electronics and devices applicable at room temperature.

cond-mat.str-el↗

arXiv2020

Noncollinear Spintronics and Electric-Field Control: A Review

Our world is composed of various materials with different structures, where spin structures have been playing a pivotal role in spintronic devices of the contemporary information technology. Apart from conventional collinear spin materials such as collinear ferromagnets and collinear antiferromagnetically coupled materials, noncollinear spintronic materials have emerged as hot spots of research attention owing to exotic physical phenomena. In this Review, we firstly introduce two types noncollinear spin structures, i.e., the chiral spin structure that yields real-space Berry phases and the coplanar noncollinear spin structure that could generate momentum-space Berry phases, and then move to relevant novel physical phenomena including topological Hall effect, anomalous Hall effect, multiferroic, Weyl fermions, spin-polarized current, and spin Hall effect without spin-orbit coupling in these noncollinear spin systems. Afterwards, we summarize and elaborate the electric-field control of the noncollinear spin structure and related physical effects, which could enable ultralow power spintronic devices in future. In the final outlook part, we emphasize the importance and possible routes for experimentally detecting the intriguing theoretically predicted spin-polarized current, verifying the spin Hall effect in the absence of spin-orbit coupling and exploring the anisotropic magnetoresistance and domain-wall-related magnetoresistance effects for noncollinear antiferromagnetic materials.

cond-mat.mes-hall↗

arXiv2019

Integration of the Noncollinear Antiferromagnetic Metal Mn3Sn onto Ferroelectric Oxides for Electric-Field Control

Non-collinear antiferromagnetic materials have received dramatically increasing attention in the field of spintronics as their exotic topological features such as the Berry-curvature-induced anomalous Hall effect and possible magnetic Weyl states could be utilized in future topological antiferromagnetic spintronic devices. In this work, we report the successful integration of the antiferromagnetic metal Mn3Sn thin films onto ferroelectric oxide PMN-PT. By optimizing growth, we realized the large anomalous Hall effect with small switching magnetic fields of several tens mT fully comparable to those of bulk Mn3Sn single crystals, anisotropic magnetoresistance and negative parallel magnetoresistance in Mn3Sn thin films with antiferromagnetic order, which are similar to the signatures of the Weyl state in bulk Mn3Sn single crystals. More importantly, we found that the anomalous Hall effect in antiferromagnetic Mn3Sn thin films can be manipulated by electric fields applied onto the ferroelectric materials, thus demonstrating the feasibility of Mn3Sn-based topological spintronic devices operated in an ultralow power manner.

cond-mat.mtrl-sci↗

arXiv2019

Antiferromagnetic Piezospintronics

Antiferromagnets naturally exhibit three obvious advantages over ferromagnets for memory device applications: insensitivity to external magnetic fields, much faster spin dynamics (~THz) and higher packing density due to the absence of any stray field. Recently, antiferromagnetic spintronics emerges as a cutting-edge field in the magnetic community. The key mission of this rapidly rising field is to steer the spins or spin axes of antiferromagnets via external stimuli and then realize advanced devices based on their physical property changes. Herein, the state of the art of antiferromagnetic spintronics is presented. Subsequently, the history of ferromagnetic/ferroelectric multiferroic composites is briefly revisited. Finally, we introduce an ultralow-power, long-range, and magnetic-field-insensitive approach for harnessing antiferromagnetic spins based on our recent experimental progress, i.e., piezoelectric strain control. Relevant theoretical and experimental studies have formed an attractive new branch in antiferromagnetic spintronics, which we coin as antiferromagnetic piezospintronics.

cond-mat.mes-hall↗

arXiv2019

A Piezoelectric, Strain-Controlled Antiferromagnetic Memory Insensitive to Magnetic Fields

Spintronic devices based on antiferromagnetic (AFM) materials hold the promise of fast switching speeds and robustness against magnetic fields. Different device concepts have been predicted and experimentally demonstrated, such as low-temperature AFM tunnel junctions that operate as spin-valves, or room-temperature AFM memory, for which either thermal heating in combination with magnetic fields, or Néel spin-orbit torque is used for the information writing process. On the other hand, piezoelectric materials were employed to control magnetism by electric fields in multiferroic heterostructures, which suppresses Joule heating caused by switching currents and may enable low energy-consuming electronic devices. Here, we combine the two material classes to explore changes of the resistance of the high-Néel-temperature antiferromagnet MnPt induced by piezoelectric strain. We find two non-volatile resistance states at room temperature and zero electric field, which are stable in magnetic fields up to 60 T. Furthermore, the strain-induced resistance switching process is insensitive to magnetic fields. Integration in a tunnel junction can further amplify the electroresistance. The tunneling anisotropic magnetoresistance reaches ~11.2% at room temperature. Overall, we demonstrate a piezoelectric, strain-controlled AFM memory which is fully operational in strong magnetic fields and has potential for low-energy and high-density memory applications.

cond-mat.mtrl-sci↗

arXiv2015

Terahertz radiation-induced sub-cycle field electron emission across a split-gap dipole antenna

We use intense terahertz pulses to excite the resonant mode (0.6 THz) of a micro-fabricated dipole antenna with a vacuum gap. The dipole antenna structure enhances the peak amplitude of the in-gap THz electric field by a factor of ~170. Above an in-gap E-field threshold amplitude of ~10 MVcm-1, THz-induced field electron emission is observed (TIFEE) as indicated by the field-induced electric current across the dipole antenna gap. Field emission occurs within a fraction of the driving THz period. Our analysis of the current (I) and incident electric field (E) is in agreement with a Millikan-Lauritsen analysis where log (I) exhibits a linear dependence on 1/E. Numerical estimates indicate that the electrons are accelerated to a value of approximately one tenth of the speed of light.

physics.optics↗

arXiv2000

Charm Production in Deep Inelastic Scattering from Threshold to High $Q^{2}

Charm final states in deep inelastic scattering constitute $\sim 25%$ of the inclusive cross-section at small $x$ as measured at HERA. These data can reveal important information on the charm and gluon structure of the nucleon if they are interpreted in a consistent perturbative QCD framework which is valid over the entire energy range from threshold to the high energy limit. We describe in detail how this can be carried out order-by-order in PQCD in the generalized \msbar formalism of Collins (generally known as the ACOT approach), and demonstrate the inherent smooth transition from the 3-flavor to the 4-flavor scheme in a complete order $α_s$ calculation, using a Monte Carlo implementation of this formalism. This calculation is accurate to the same order as the conventional NLO $F_2$ calculation in the limit $\frac{Q}{m_c} >> 1$. It includes the resummed large logarithm contributions of the 3-flavor scheme (generally known in this context as the fixed-flavor-number or FFN scheme) to all orders of $α_s\ln(m_c^2/Q^2)$. For the inclusive structure function, comparison with recent HERA data and the existing FFN calculation reveals that the relatively simple order-$α_s$ (NLO) 4-flavor ($m_c \neq 0$) calculation can, in practice, be extended to rather low energy scales, yielding good agreement with data over the full measured $Q^2$ range. The Monte Carlo implementation also allows the calculation of differential distributions with relevant kinematic cuts. Comparisons with available HERA data show qualitative agreement; however, they also indicate the need to extend the calculation to the next order to obtain better description of the differential distributions.

hep-ph↗