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arXiv · 1903.04782

Antiferromagnetic Piezospintronics

Zhiqi Liu·Zexin Feng·Han Yan·Xiaoning Wang·Xiaorong Zhou·Peixin Qin·Huixin Guo·Ronghai Yu·Chengbao Jiang
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Abstract

Antiferromagnets naturally exhibit three obvious advantages over ferromagnets for memory device applications: insensitivity to external magnetic fields, much faster spin dynamics (~THz) and higher packing density due to the absence of any stray field. Recently, antiferromagnetic spintronics emerges as a cutting-edge field in the magnetic community. The key mission of this rapidly rising field is to steer the spins or spin axes of antiferromagnets via external stimuli and then realize advanced devices based on their physical property changes. Herein, the state of the art of antiferromagnetic spintronics is presented. Subsequently, the history of ferromagnetic/ferroelectric multiferroic composites is briefly revisited. Finally, we introduce an ultralow-power, long-range, and magnetic-field-insensitive approach for harnessing antiferromagnetic spins based on our recent experimental progress, i.e., piezoelectric strain control. Relevant theoretical and experimental studies have formed an attractive new branch in antiferromagnetic spintronics, which we coin as antiferromagnetic piezospintronics.

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Zhiqi Liu, Zexin Feng, Han Yan, Xiaoning Wang, Xiaorong Zhou, Peixin Qin, Huixin Guo, Ronghai Yu, Chengbao Jiang. 2019-03-12. Antiferromagnetic Piezospintronics. https://doi.org/10.1002/aelm.201900176

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