arXiv subjects

Xiaorong Zhou

Publications and source records attributed to Xiaorong Zhou.

44 records · Page 3Linked to original sources

arXiv2021

Application of high-spatial-resolution secondary ion mass spectrometry for nanoscale chemical mapping of lithium in an Al-Li alloy

High-spatial-resolution secondary ion mass spectrometry offers a method for mapping lithium at nanoscale lateral resolution. Practical implementation of this technique offers significant potential for revealing the distribution of Li in many materials with exceptional lateral resolution and elemental sensitivity. Here, two state-of-the-art methods are demonstrated on an aluminium-lithium alloy to visualise nanoscale Li-rich phases by mapping the 7Li+ secondary ion. NanoSIMS 50L analysis with a radio frequency O- plasma ion source enabled visualisation of needle-shaped T1 (Al2CuLi) phases as small as 75 nm in width. A compact time-of-flight secondary ion mass spectrometry detector added to a focused ion beam scanning electron microscope facilitated mapping of the T1 phases down to 45 nm in width using a Ga+ ion beam. Correlation with high resolution electron microscopy confirms the identification of T1 precipitates, their sizes and distribution observed during SIMS mapping.

cond-mat.mtrl-sci↗

arXiv2021

Electron-Ion Collider in China

Lepton scattering is an established ideal tool for studying inner structure of small particles such as nucleons as well as nuclei. As a future high energy nuclear physics project, an Electron-ion collider in China (EicC) has been proposed. It will be constructed based on an upgraded heavy-ion accelerator, High Intensity heavy-ion Accelerator Facility (HIAF) which is currently under construction, together with a new electron ring. The proposed collider will provide highly polarized electrons (with a polarization of $\sim$80%) and protons (with a polarization of $\sim$70%) with variable center of mass energies from 15 to 20 GeV and the luminosity of (2-3) $\times$ 10$^{33}$ cm$^{-2}$ s$^{-1}$. Polarized deuterons and Helium-3, as well as unpolarized ion beams from Carbon to Uranium, will be also available at the EicC. The main foci of the EicC will be precision measurements of the structure of the nucleon in the sea quark region, including 3D tomography of nucleon; the partonic structure of nuclei and the parton interaction with the nuclear environment; the exotic states, especially those with heavy flavor quark contents. In addition, issues fundamental to understanding the origin of mass could be addressed by measurements of heavy quarkonia near-threshold production at the EicC. In order to achieve the above-mentioned physics goals, a hermetical detector system will be constructed with cutting-edge technologies. This document is the result of collective contributions and valuable inputs from experts across the globe. The EicC physics program complements the ongoing scientific programs at the Jefferson Laboratory and the future EIC project in the United States. The success of this project will also advance both nuclear and particle physics as well as accelerator and detector technology in China.

nucl-ex↗

arXiv2021

Observation of the Anomalous Hall Effect in a Collinear Antiferromagnet

Time-reversal symmetry breaking is the basic physics concept underpinning many magnetic topological phenomena such as the anomalous Hall effect (AHE) and its quantized variant. The AHE has been primarily accompanied by a ferromagnetic dipole moment, which hinders the topological quantum states and limits data density in memory devices, or by a delicate noncollinear magnetic order with strong spin decoherence, both limiting their applicability. A potential breakthrough is the recent theoretical prediction of the AHE arising from collinear antiferromagnetism in an anisotropic crystal environment. This new mechanism does not require magnetic dipolar or noncollinear fields. However, it has not been experimentally observed to date. Here we demonstrate this unconventional mechanism by measuring the AHE in an epilayer of a rutile collinear antiferromagnet RuO$_2$. The observed anomalous Hall conductivity is large, exceeding 300 S/cm, and is in agreement with the Berry phase topological transport contribution. Our results open a new unexplored chapter of time-reversal symmetry breaking phenomena in the abundant class of collinear antiferromagnetic materials.

cond-mat.mtrl-sci↗

arXiv2021

A two-dimensional electron gas based on a 5s oxide with high room-temperature mobility and strain sensitivity

The coupling of optical and electronic degrees of freedom together with quantum confinement in low-dimensional electron systems is particularly interesting for achieving exotic functionalities in strongly correlated oxide electronics. Recently, high room-temperature mobility has been achieved for a large bandgap transparent oxide - BaSnO$_3$ upon extrinsic La or Sb doping, which has excited significant research attention. In this work, we report the observation of room-temperature ferromagnetism in BaSnO$_3$ thin films and the realization of a two-dimensional electron gas (2DEG) on the surface of transparent BaSnO$_3$ via oxygen vacancy creation, which exhibits a high carrier density of $\sim 7.72*10^{14} /{\rm cm}^2$ and a high room-temperature mobility of ~18 cm$^2$/V/s. Such a 2DEG is rather sensitive to strain and a less than 0.1% in-plane biaxial compressive strain leads to a giant resistance enhancement of 350% (more than 540 kOhm/Square) at room temperature. Thus, this work creates a new path to exploring the physics of low-dimensional oxide electronics and devices applicable at room temperature.

cond-mat.str-el↗

arXiv2020

Noncollinear Spintronics and Electric-Field Control: A Review

Our world is composed of various materials with different structures, where spin structures have been playing a pivotal role in spintronic devices of the contemporary information technology. Apart from conventional collinear spin materials such as collinear ferromagnets and collinear antiferromagnetically coupled materials, noncollinear spintronic materials have emerged as hot spots of research attention owing to exotic physical phenomena. In this Review, we firstly introduce two types noncollinear spin structures, i.e., the chiral spin structure that yields real-space Berry phases and the coplanar noncollinear spin structure that could generate momentum-space Berry phases, and then move to relevant novel physical phenomena including topological Hall effect, anomalous Hall effect, multiferroic, Weyl fermions, spin-polarized current, and spin Hall effect without spin-orbit coupling in these noncollinear spin systems. Afterwards, we summarize and elaborate the electric-field control of the noncollinear spin structure and related physical effects, which could enable ultralow power spintronic devices in future. In the final outlook part, we emphasize the importance and possible routes for experimentally detecting the intriguing theoretically predicted spin-polarized current, verifying the spin Hall effect in the absence of spin-orbit coupling and exploring the anisotropic magnetoresistance and domain-wall-related magnetoresistance effects for noncollinear antiferromagnetic materials.

cond-mat.mes-hall↗

arXiv2019

Integration of the Noncollinear Antiferromagnetic Metal Mn3Sn onto Ferroelectric Oxides for Electric-Field Control

Non-collinear antiferromagnetic materials have received dramatically increasing attention in the field of spintronics as their exotic topological features such as the Berry-curvature-induced anomalous Hall effect and possible magnetic Weyl states could be utilized in future topological antiferromagnetic spintronic devices. In this work, we report the successful integration of the antiferromagnetic metal Mn3Sn thin films onto ferroelectric oxide PMN-PT. By optimizing growth, we realized the large anomalous Hall effect with small switching magnetic fields of several tens mT fully comparable to those of bulk Mn3Sn single crystals, anisotropic magnetoresistance and negative parallel magnetoresistance in Mn3Sn thin films with antiferromagnetic order, which are similar to the signatures of the Weyl state in bulk Mn3Sn single crystals. More importantly, we found that the anomalous Hall effect in antiferromagnetic Mn3Sn thin films can be manipulated by electric fields applied onto the ferroelectric materials, thus demonstrating the feasibility of Mn3Sn-based topological spintronic devices operated in an ultralow power manner.

cond-mat.mtrl-sci↗

arXiv2019

Antiferromagnetic Piezospintronics

Antiferromagnets naturally exhibit three obvious advantages over ferromagnets for memory device applications: insensitivity to external magnetic fields, much faster spin dynamics (~THz) and higher packing density due to the absence of any stray field. Recently, antiferromagnetic spintronics emerges as a cutting-edge field in the magnetic community. The key mission of this rapidly rising field is to steer the spins or spin axes of antiferromagnets via external stimuli and then realize advanced devices based on their physical property changes. Herein, the state of the art of antiferromagnetic spintronics is presented. Subsequently, the history of ferromagnetic/ferroelectric multiferroic composites is briefly revisited. Finally, we introduce an ultralow-power, long-range, and magnetic-field-insensitive approach for harnessing antiferromagnetic spins based on our recent experimental progress, i.e., piezoelectric strain control. Relevant theoretical and experimental studies have formed an attractive new branch in antiferromagnetic spintronics, which we coin as antiferromagnetic piezospintronics.

cond-mat.mes-hall↗

arXiv2019

A Piezoelectric, Strain-Controlled Antiferromagnetic Memory Insensitive to Magnetic Fields

Spintronic devices based on antiferromagnetic (AFM) materials hold the promise of fast switching speeds and robustness against magnetic fields. Different device concepts have been predicted and experimentally demonstrated, such as low-temperature AFM tunnel junctions that operate as spin-valves, or room-temperature AFM memory, for which either thermal heating in combination with magnetic fields, or Néel spin-orbit torque is used for the information writing process. On the other hand, piezoelectric materials were employed to control magnetism by electric fields in multiferroic heterostructures, which suppresses Joule heating caused by switching currents and may enable low energy-consuming electronic devices. Here, we combine the two material classes to explore changes of the resistance of the high-Néel-temperature antiferromagnet MnPt induced by piezoelectric strain. We find two non-volatile resistance states at room temperature and zero electric field, which are stable in magnetic fields up to 60 T. Furthermore, the strain-induced resistance switching process is insensitive to magnetic fields. Integration in a tunnel junction can further amplify the electroresistance. The tunneling anisotropic magnetoresistance reaches ~11.2% at room temperature. Overall, we demonstrate a piezoelectric, strain-controlled AFM memory which is fully operational in strong magnetic fields and has potential for low-energy and high-density memory applications.

cond-mat.mtrl-sci↗