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Xiaoshen Kang

Publications and source records attributed to Xiaoshen Kang.

8 recordsLinked to original sources

Polarization transfer in $ψ'\toψππ$: a complete spin density matrix analysis framework

A theoretical framework based on the Spin Density Matrix (SDM) formalism is developed to describe polarization transfer in the decay chain $e^+e^- \rightarrow ψ^\prime \rightarrow ψππ$. Explicit relations connecting the SDMs of $ψ^\prime$ and $ψ$ are derived, generalizing Cahn's analysis into a complete SDM treatment. For the dominant $S$-wave $ππ$ emission, the SDM is shown to be perfectly preserved, $ρ_ψ= ρ_{ψ^\prime}$, rendering the $ψ$ an ideal probe of the initial polarization state. Deviations arising from $D$-wave contributions are quantified, and a self-consistency experimental test is proposed that simultaneously validates the framework and constrains partial wave amplitudes. This formalism provides a consistent basis for extracting $ψ$ polarization and for amplitude analyses of subsequent $ψ$ decays in a continuum-background-free environment. The framework extends to other hadronic transitions, including $ψ' \to h_cπ^0$ in charmonium and $Υ(nS) \to Υ(mS)ππ$ in bottomonium, as well as to electroweak processes such as $e^+e^- \to Z^\ast \to ZH$, where the same angular-momentum structure governs polarization transfer -- offering a unified probe of dynamics from charmonium to the Higgs sector.

hep-ph

Rise Time and Charge Collection Efficiency of Graphene-Optimized 4H-SiC p-i-n Detector

Silicon carbide detectors exhibit good detection performance and are being considered for detection applications. However, the presence of surface electrode of detector limits the application of low-penetration particle detectors, photodetectors and heavy-ion detection. A graphene-optimized 4H-SiC detector has been fabricated to expand the application of SiC detectors.Its electrical properties and the charge collection performance of α particles are reported. The effective doping concentration of lightly doped 4H-SiC epitaxial layer is about 4.5\times10^{13}cm^{-3}, approaching the limit of the lowest doping level by the SiC epitaxial growth technique. The rise time of the graphene-optimized ring electrode detector is reduced by 24% at 200 V, compared to ring electrode detector. The charge collection efficiency (CCE) of graphene-optimized 4H-SiC PIN is 99.22%. When the irradiation dose is 2\times10^{11} n_{eq}/cm^2, the irradiation has no significant impact on the rise time and uniformity of the rise time for the graphene-optimized 4H-SiC detectors. This study proves that graphene has a certain radiation resistance. Graphene-optimized 4H-SiC detectors can not only reduce the signal rise time, but also improve uniformity of signal rise time and stability of charge collection. This research will expand the application of graphene-based 4H-SiC detectors in fields such as low energy ions, X-ray, UV light detection, particle physics, medical dosimetry and heavy-ion detection.

physics.ins-det

Conceptual Design of the Muonium-to-Antimuonium Conversion Experiment (MACE)

The spontaneous conversion of muonium to antimuonium is one of the interesting charged lepton flavor violation phenomena offering a sensitive probe of potential new physics and serving as a tool to constrain the parameter space beyond the Standard Model. The Muonium-to-Antimuonium Conversion Experiment (MACE) is designed to utilize a high-intensity muon beam, a Michel electron magnetic spectrometer, a positron transport system, and a positron detection system, to either discover or constrain this rare process with a conversion probability of $\mathcal{O}(10^{-13})$. This article presents an overview of the theoretical framework as well as a detailed description of the experimental design for the search for muonium-to-antimuonium conversion.

hep-ex

High precision proton beam monitor system concept design on CSNS based on SiC

A high precision beam monitor system based on silicon carbide PIN sensor is designed for China Spallation Neutron Source 1.6 GeV proton beam to monitor the proton beam fluence.The concept design of the beam monitor system is finished together with front-end electronics with silicon carbide PIN sensors, readout system and mechanical system.Several tests are performed to study the performance of each component of the system.The charge collection of the SiC PIN sensors after proton radiation is studied with 80 MeV proton beam for continuous running. Research on the performance of the front-end electronics and readout system is finished for better data acquisition.The uncertainty of proton beam fluence is below 1% in the beam monitor system.

physics.acc-ph

Electric Field Measurement by Edge Transient Current Technique on Silicon Low Gain Avalanche Detector

A novel methodology, named the diffusion profile method, is proposed in this research to measure the electric field of a low gain avalanche detector (LGAD).The proposed methodology utilizes the maximum of the time derivative of the edge transient current technique (edge-TCT) test waveform to quantify the dispersion of the light-induced carriers. This method introduces the estimation of the elongation of the carrier cluster caused by diffusion and the divergence of the electric field force during its drift along the detector. The effectiveness of the diffusion profile method is demonstrated through the analysis of both simulated and measured edge-TCT waveforms. Experimental data was collected from a laser scan performed on an LGAD detector along its thickness direction.A simulation procedure has been developed in RASER (RAdiation SEmiconductoR) to generate signals from LGAD.An assumption of immediate one-step carrier multiplication is introduced to simplify the avalanche process.Simulation results were compared with transient current data at the waveform level and showed a favorable match. Both simulation and experimental results have shown that the diffusion profile method could be applied to certain edge-TCT facilities as an alternative of electric field measurement.

physics.ins-det

Design and simulation of a novel 4H-SiC LGAD timing device

Silicon-based fast time detectors have been widely used in high energy physics, nuclear physics, space exploration and other fields in recent years. However, silicon detectors often require complex low-temperature systems when operating in irradiation environment, and their detection performance decrease with the increase of irradiation dose. Compared with silicon, silicon carbide (SiC) has a wider bandgap, higher atomic displacement energy, saturated electron drift velocity and thermal conductivity. Simultaneously, the low gain avalanche detector avoids crosstalk and high noise from high multiplication due to its moderate gain, and thus can maintain a high detector signal without increasing noise. Thus, the 4H-SiC particle detector, especially the low gain avalanche detector has the potential to detect the minimal ionized particles (MIPs) under extreme irradiation and high temperature environments. In this work, the emphasis was placed on the design of a 4H-SiC Low Gain Avalanche Detector (LGAD), especially the epitaxial structure and technical process which played the main roles. In addition, a simulation tool--RASER(RAdiation SEmiconductoR) was developed to simulate the performances including the electrical properties and time resolution of the 4H-SiC LGAD we proposed. The working voltage and gain effectiveness of the LGAD were verified by the simulation of electrical performances. The time resolution of the LGAD is (35.0 $\pm$ 0.2) ps under the electrical field of -800 V, which is better than that of the 4H-SiC PIN detector.

physics.ins-det

Sensitivity of $CP$ Violation of $Λ$ decay in $J/ψ\to Λ\barΛ$ at STCF

The process of $J/ψ\to Λ\barΛ$ is studied using $1.0\times10^{12}$ $J/ψ$ Monte Carlo (MC) events at $\sqrt{s}$=3.097 GeV with a fast simulation software at future Super Tau Charm Facility (STCF). The statistical sensitivity for $CP$ violation is determined to be the order of $\mathcal{O} (10^{-4})$ by measuring the asymmetric parameters of the $Λ$ decay. Furthermore, the decay of $J/ψ\to Λ\barΛ$ also serves as a benchmark process to optimize the detector responses using the interface provided by the fast simulation software.

hep-ph

Timing performance simulation for 3D 4H-SiC detector

To meet high radiation challenge for detectors in future high-energy physics, a novel 3D 4H-SiC detector was investigated. SiC detectors could potentially operate in radiation harsh and room temperature environment because of its high thermal conductivity and high atomic displacement threshold energy. 3D structure, which decouples thickness and distance between electrodes, further improves timing performance and radiation hardness of the detector. We developed a simulation software - RASER (RAdiation SEmiconductoR) to simulate the time resolution of planar and 3D 4H-SiC detectors with different parameters and structures, and the reliability of the software is verified by comparing time resolution results of simulation with data. The rough time resolution of 3D 4H-SiC detector was estimated, and the simulation parameters could be used as guideline to 3D 4H-SiC detector design and optimization.

physics.ins-det