arXiv subjects

Xiaoxiong Wang

Publications and source records attributed to Xiaoxiong Wang.

At least 19 recordsLinked to original sources

arXiv2025

Hierarchical Semantic-Visual Fusion of Visible and Near-infrared Images for Long-range Haze Removal

While image dehazing has advanced substantially in the past decade, most efforts have focused on short-range scenarios, leaving long-range haze removal under-explored. As distance increases, intensified scattering leads to severe haze and signal loss, making it impractical to recover distant details solely from visible images. Near-infrared, with superior fog penetration, offers critical complementary cues through multimodal fusion. However, existing methods focus on content integration while often neglecting haze embedded in visible images, leading to results with residual haze. In this work, we argue that the infrared and visible modalities not only provide complementary low-level visual features, but also share high-level semantic consistency. Motivated by this, we propose a Hierarchical Semantic-Visual Fusion (HSVF) framework, comprising a semantic stream to reconstruct haze-free scenes and a visual stream to incorporate structural details from the near-infrared modality. The semantic stream first acquires haze-robust semantic prediction by aligning modality-invariant intrinsic representations. Then the shared semantics act as strong priors to restore clear and high-contrast distant scenes under severe haze degradation. In parallel, the visual stream focuses on recovering lost structural details from near-infrared by fusing complementary cues from both visible and near-infrared images. Through the cooperation of dual streams, HSVF produces results that exhibit both high-contrast scenes and rich texture details. Moreover, we introduce a novel pixel-aligned visible-infrared haze dataset with semantic labels to facilitate benchmarking. Extensive experiments demonstrate the superiority of our method over state-of-the-art approaches in real-world long-range haze removal.

cs.CV↗

arXiv2024

GT-Rain Single Image Deraining Challenge Report

This report reviews the results of the GT-Rain challenge on single image deraining at the UG2+ workshop at CVPR 2023. The aim of this competition is to study the rainy weather phenomenon in real world scenarios, provide a novel real world rainy image dataset, and to spark innovative ideas that will further the development of single image deraining methods on real images. Submissions were trained on the GT-Rain dataset and evaluated on an extension of the dataset consisting of 15 additional scenes. Scenes in GT-Rain are comprised of real rainy image and ground truth image captured moments after the rain had stopped. 275 participants were registered in the challenge and 55 competed in the final testing phase.

cs.CV↗

arXiv2023

Evolution of Maximum Bending Strain on Poisson's Ratio Distribution

In recent years, new flexible functional materials have attracted increasing interest, but there is a lack of the designing mechanisms of flexibility design with superstructures. In traditional engineering mechanics, the maximum bending strain (MBS) was considered universal for describing the bendable properties of a given material, leading to the universal designing method of lowering the dimension such as thin membranes designed flexible functional materials.In this work, the MBS was found only applicable for materials with uniformly distributed Poisson's ratio, while the MBS increases with the thickness of the given material in case there is a variation Poisson's ratio in different areas. This means the MBS can be enhanced by certain Poisson's ratio design in the future to achieve better flexibility of thick materials. Here, the inorganic freestanding nanofiber membranes, which have a nonconstant Poisson's ratio response on stress/strain for creating nonuniformly distributed Poisson's ratio were proven applicable for designing larger MBS and lower Young's modulus for thicker samples.

cond-mat.soft↗

arXiv2023

A Two-Stage Real Image Deraining Method for GT-RAIN Challenge CVPR 2023 Workshop UG$^{\textbf{2}}$+ Track 3

In this technical report, we briefly introduce the solution of our team HUST\li VIE for GT-Rain Challenge in CVPR 2023 UG$^{2}$+ Track 3. In this task, we propose an efficient two-stage framework to reconstruct a clear image from rainy frames. Firstly, a low-rank based video deraining method is utilized to generate pseudo GT, which fully takes the advantage of multi and aligned rainy frames. Secondly, a transformer-based single image deraining network Uformer is implemented to pre-train on large real rain dataset and then fine-tuned on pseudo GT to further improve image restoration. Moreover, in terms of visual pleasing effect, a comprehensive image processor module is utilized at the end of pipeline. Our overall framework is elaborately designed and able to handle both heavy rainy and foggy sequences provided in the final testing phase. Finally, we rank 1st on the average structural similarity (SSIM) and rank 2nd on the average peak signal-to-noise ratio (PSNR). Our code is available at https://github.com/yunguo224/UG2_Deraining.

cs.CV↗

arXiv2023

Edge States of α-Bismuthene Nanostructures

We present a systematic investigation of the edge states of two-dimensional α-bismuthene (α-Bi) structures self-assembled on HOPG substrates, using scanning tunnelling microscopy and scanning tunnelling spectroscopy. The measurements are carried out for 3ML, 5ML and 7ML thick Bi structures. Our spectroscopy studies reveal clear features at the edges of the 5ML and 7ML thick structures, and the positions of the edge states (ESs) coincide with the topographical step edges. In contrast, in 3ML structures the ESs appear to be absent and instead new states are sometimes observed, far from the topographical edge. These states are associated with a moiré pattern and result from strain-induced modulation of the topology. Our observations demonstrate the impact on the edge states of coupling to adjacent structures.

cond-mat.mes-hall↗

arXiv2021

Double band inversion in the topological phase transition of Ge1-xSnx alloys

We use first-principles simulation and virtual crystal approximation to reveal the unique double band inversion and topological phase transition in Ge1-xSnx alloys. Wavefunction parity, spatial charge distribution and surface state spectrum analyses suggest that the band inversion in Ge1-xSnx is relayed by its first valence band. As the system evolves from Ge to α-Sn, its conduction band moves down, and inverts with the first and the second valence bands consecutively. The first band inversion makes the system nontrivial, while the second one does not change the topological invariant of the system. Both the band inversions yield surface modes spanning the individual inverted gaps, but only the surface mode in the upper gap associates with the nontrivial nature of tensile-strained α-Sn.

cond-mat.mtrl-sci↗

arXiv2020

Discovery of the Superconductivity in 3d Element Ni doped IrTe$_2$

IrTe$_2$ with large spin-orbital coupling (SOC) shows a CDW-like first order structural phase transition from high-temperature trigonal phase to low-temperature monoclinic phase at 270 K, accompanying with a large jump in transport and magnetic measurement as well as in heat capacity. Here, the 3d element Ni has been doped into IrTe$_2$ by growing Ir$_{1-x}$Ni$_x$Te$_2$ single crystals. Both XRD and XPS results reveal that the Ni atoms have substituted for Ir, which is consistent with the calculation result. Like the CDW behaviour, the structural phase transition shows competition and coexistence with the superconductivity. The monoclinic phase transition has been suppressed gradually with the increase of the doping amount of Ni, at last giving rise to the stabilization of the trigonal phase with superconductivity. Within 0.1$\leq$x$\leq$0.2, Ir$_{1-x}$Ni$_x$Te$_2$ shows the superconductive behaviour with T$_c$ around 2.6K. The superconductivity shows anisotropy with dimensionless anisotropy parameter $γ$=$ξ_{//}$$/$$ξ_{\perp}$$\sim$ 2. Even Ni element shows ferromagnetic behaviour, Ir$_{1-x}$Ni$_x$Te$_2$ only shows weak paramagnetism, no ferromagnetic order is observed in it, which is coincident with the calculation result that their up and down spin density of states compensate each other well. In addition, for other 3d elements Fe, Co and Mn doped IrTe$_2$, only Ir$_{1-x}$Mn$_x$Te$_2$ owns magnetism with magnetic moment of 3.0$μ$$_B$ to the supercell, theoretically.

cond-mat.supr-con↗

arXiv2019

Superconducting properties in a candidate topological nodal line semimetal SnTaS$_2$ with a centrosymmetric crystal structure

We report the magnetization, electrical resistivity, specific heat measurements and band structure calculations of layered superconductor SnTaS$_2$. The experiments are performed on single crystals grown by chemical vapor transport method. The resistivity and magnetic susceptibility indicate that SnTaS$_2$ is a type-II superconductor with transition temperature $T_c = 3$ K. The upper critical field ($H_{c2}$) shows large anisotropy for magnetic field parallel to $ab$ plane ($H//ab$) and $c$ axis ($H//c$), and the temperature dependence of $H_{c2}$ for $H//ab$ shows obvious unconventional upward feature at low temperature. Band structure of SnTaS$_2$ shows several band crossings near the Fermi level, which form three nodal lines in the k$_z$ = 0 plane resulting in drumhead-like surface states when spin-orbit coupling is not considered. These results indicate that SnTaS$_2$ is a superconductor with possible topological nodal line semimetal character.

cond-mat.supr-con↗

arXiv2019

Strong band kinks in magic-thickness Yb films arising from interfacial electron-phonon coupling

Interfacial electron-phonon coupling in ultrathin films has attracted much interest; it can give rise to novel effects and phenomena, including enhanced superconductivity. Here we report an observation of strong kinks in the energy dispersions of quantum well states in ultrathin Yb films grown on graphite. These kinks, arising from interfacial electron-phonon coupling, are most prominent for films with a preferred ("magic") thickness of 4 monolayers, which are strained and hole doped by the substrate. The energy position of the kinks agrees well with the optical phonon energy of graphite, and the extracted electron-phonon coupling strength λ shows a large subband dependence, with a maximum value up to 0.6. The kinks decay rapidly with increasing film thickness, consistent with its interfacial origin. The variation of λ is correlated with evolution of the electronic wave function amplitudes at the interface. A Lifshitz transition occurs just beyond the magic thickness where the heavy Yb 5d bands begin to populate right below the Fermi level.

cond-mat.mes-hall↗

arXiv2019

Realisation of Symmetry Enforced Two-Dimensional Dirac Fermions in Nonsymmorphic $α$-Bismuthene

Two-dimensional (2D) Dirac-like electron gases have attracted tremendous research interest ever since the discovery of free-standing graphene. The linear energy dispersion and non-trivial Berry phase play the pivotal role in the remarkable electronic, optical, mechanical and chemical properties of 2D Dirac materials. The known 2D Dirac materials are gapless only within certain approximations, for example, in the absence of SOC. Here we report a route to establishing robust Dirac cones in 2D materials with nonsymmorphic crystal lattice. The nonsymmorphic symmetry enforces Dirac-like band dispersions around certain high-symmetry momenta in the presence of SOC. Through $μ$-ARPES measurements we observe Dirac-like band dispersions in $α$-bismuthene. The nonsymmorphic lattice symmetry is confirmed by $μ$-LEED and STM. Our first-principles simulations and theoretical topological analysis demonstrate the correspondence between nonsymmorphic symmetry and Dirac states. This mechanism can be straightforwardly generalized to other nonsymmorphic materials. The results open the door for the search of symmetry enforced Dirac fermions in the vast uncharted world of nonsymmorphic 2D materials.

cond-mat.mes-hall↗

arXiv2018

In-situ strain tuning of the Dirac surface states in Bi2Se3 films

Elastic strain has the potential for a controlled manipulation of the band gap and spin-polarized Dirac states of topological materials, which can lead to pseudo-magnetic-field effects, helical flat bands and topological phase transitions. However, practical realization of these exotic phenomena is challenging and yet to be achieved. Here, we show that the Dirac surface states of the topological insulator Bi2Se3 can be reversibly tuned by an externally applied elastic strain. Performing in-situ x-ray diffraction and in-situ angle-resolved photoemission spectroscopy measurements during tensile testing of epitaxial Bi2Se3 films bonded onto a flexible substrate, we demonstrate elastic strains of up to 2.1% and quantify the resulting reversible changes in the topological surface state. Our study establishes the functional relationship between the lattice and electronic structures of Bi2Se3 and, more generally, demonstrates a new route toward momentum-resolved mapping of strain-induced band structure changes.

cond-mat.mtrl-sci↗

arXiv2018

Experimental and Theoretical Electronic Structure and Symmetry Effects in Ultrathin NbSe2 Films

Layered quasi-two-dimensional transition metal dichalcogenides (TMDCs), which can be readily made in ultrathin films, offer excellent opportunities for studying how dimensionality affects electronic structure and physical properties. Among all TMDCs, NbSe2 is of special interest; bulk NbSe2 hosts a charge-density-wave phase at low temperatures and has the highest known superconducting transition temperature, and these properties can be substantially modified in the ultrathin film limit. Motivated by these effects, we report herein a study of few-layer NbSe2 films, with a well-defined single-domain orientation, epitaxially grown on Gallium Arsenide (GaAs). Angle-resolved photoemission spectroscopy (ARPES) was used to determine the electronic band structure and the Fermi surface as a function of layer thickness; first-principles band structure calculations were performed for comparison. The results show interesting changes as the film thickness increases from a monolayer (ML) to several layers. The most notable changes occur between a ML and a bilayer, where the inversion symmetry in bulk NbSe2 is preserved in the bilayer but not in the ML. The results illustrate some basic dimensional effects and provide a basis for further exploring and understanding the properties of NbSe2.

cond-mat.mes-hall↗

arXiv2017

Pt-Bi Antibonding Interaction: The Key Factor for Superconductivity in Monoclinic BaPt2Bi2

In the search for superconductivity in BaAu2Sb2-type monoclinic structure, we have successfully synthesized a new compound BaPt2Bi2, which crystallizes in the space group P21/m (S.G. 11; Pearson symbol mP10) according to a combination of powder and single crystal X-ray diffraction and scanning electron microscopy. Sharp electrical resistivity drop and large diamagnetic magnetization below 2.0 K indicates it owns the superconducting ground state. This makes BaPt2Bi2 the first reported superconductor in mono-clinic BaAu2Sb2-type structure, a previously unappreciated structure for superconductivity. First-principles calculations considering the spin-orbit coupling indicate that Pt-Bi anti-bonding interaction plays a critical role in inducing superconductivity.

cond-mat.supr-con↗

arXiv2017

Gapped Electronic Structure of Epitaxial Stanene on InSb(111)

Stanene (single-layer grey tin), with an electronic structure akin to that of graphene but exhibiting a much larger spin-orbit gap, offers a promising platform for room-temperature electronics based on the quantum spin Hall (QSH) effect. This material has received much theoretical attention, but a suitable substrate for stanene growth that results in an overall gapped electronic structure has been elusive; a sizable gap is necessary for room-temperature applications. Here, we report a study of stanene epitaxially grown on the (111)B-face of indium antimonide (InSb). Angle-resolved photoemission spectroscopy (ARPES) measurements reveal a gap of 0.44 eV, in agreement with our first-principles calculations. The results indicate that stanene on InSb(111) is a strong contender for electronic QSH applications.

cond-mat.mtrl-sci↗

arXiv2017

Band Topology and Dichroic Signature of Bismuth

Bismuth has been the key element in the discovery and development of topological insulator materials. Previous theoretical studies indicated that Bi is topologically trivial and it can transform into the topological phase by alloying with Sb. However, recent high-resolution angle-resolved photoemission spectroscopy (ARPES) measurements strongly suggested a topological band structure in pure Bi. To address this issue, we study the band structure of Bi and Sb films by ARPES and first-principles calculations. By tuning tight binding parameters, we show that Bi quantum films in topologically trivial and nontrivial phases response differently to surface perturbations. Therefore, we establish an experimental route for detecting the band topology of Bi by spectroscopic methods. In addition, our circular dichroic photoemission illuminates the rich surface states and complex spin texture of the Bi(111) surface.

cond-mat.mtrl-sci↗

arXiv2017

Engineering Multiple Topological Phases in Nanoscale Van der Waals Heterostructures: Realisation of $α$-Antimonene

Van der Waals heterostructures have recently been identified as providing many opportunities to create new two-dimensional materials, and in particular to produce materials with topologically interesting states. Here we show that it is possible to create such heterostructures with multiple topological phases in a single nanoscale island. We discuss their growth within the framework of diffusion-limited aggregation, the formation of moiré patterns due to the differing crystallographies of the materials comprising the heterostructure, and the potential to engineer both the electronic structure as well as local variations of topological order. In particular we show that it is possible to build islands which include both the hexagonal $β$- and rectangular $α$-forms of antimonene, on top of the topological insulator $α$-bismuthene. This is the first experimental realisation of $α$-antimonene, and we show that it is a topologically non-trivial material in the quantum spin Hall class.

cond-mat.mtrl-sci↗

arXiv2017

Elemental topological Dirac semimetal: α-Sn on InSb(111)

Three-dimensional (3D) topological Dirac semimetals (TDSs) are rare but important as a versatile platform for exploring exotic electronic properties and topological phase transitions. A quintessential feature of TDSs is 3D Dirac fermions associated with bulk electronic states near the Fermi level. Using angle-resolved photoemission spectroscopy (ARPES), we have observed such bulk Dirac cones in epitaxially-grown α-Sn films on InSb(111), the first such TDS system realized in an elemental form. First-principles calculations confirm that epitaxial strain is key to the formation of the TDS phase. A phase diagram is established that connects the 3D TDS phase through a singular point of a zero-gap semimetal phase to a topological insulator (TI) phase. The nature of the Dirac cone crosses over from 3D to 2D as the film thickness is reduced.

cond-mat.mtrl-sci↗

arXiv2015

Engineering electronic structure of a 2D topological insulator Bi(111) bilayer on Sb nanofilms by quantum confinement effect

We report on fabrication of a two-dimensional topological insulator-Bi(111) bilayer on Sb nanofilms via a sequential molecular beam epitaxy (MBE) growth technique. Our angle-resolved photoemission measurements demonstrate the evolution of the electronic band structure of the heterostructure as a function of the film thickness and reveal the existence of a two-dimensional spinful massless electron gas within the top Bi bilayer. Interestingly, Our first-principles calculation extrapolating the observed band structure shows that, by tuning down the thickness of the supporting Sb films into the quantum dimension regime, a pair of isolated topological edge states emerges in a partial energy gap at 0.32 eV above the Fermi level as a consequence of quantum confinement effect. Our results and methodology of fabricating nanoscale heterostructures establish the Bi bilayer/Sb heterostructure as a platform of great potential for both ultralow-energy-cost electronics and surface-based spintronics.

cond-mat.mes-hall↗