arXiv subjects

Xiaoyong Wang

Publications and source records attributed to Xiaoyong Wang.

24 records · Page 2Linked to original sources

arXiv2013

Enhanced Hot-Carrier Luminescence in Multilayer Reduced Graphene Oxide Nanospheres

We report a method to promote photoluminescence emission in graphene materials by enhancing carrier scattering instead of directly modifying band structure in multilayer reduced graphene oxide (rGO) nanospheres. We intentionally curl graphene layers to form nanospheres by reducing graphene oxide with spherical polymer templates to manipulate the carrier scattering. These nanospheres produce hot-carrier luminescence with more than ten-fold improvement of emission efficiency as compared to planar nanosheets. With increasing excitation power, hot-carrier luminescence from nanospheres exhibits abnormal spectral redshift with dynamic feature associated to the strengthened electron-phonon coupling. These experimental results can be well understood by considering the screened Coulomb interactions. With increasing carrier density, the reduced screening effect promotes carrier scattering which enhances hot-carrier emission from such multilayer rGO nanospheres. This carrier-scattering scenario is further confirmed by pump-probe measurements.

cond-mat.mes-hall↗

arXiv2013

Orbital-Selective Mottness in KxFe2-ySe2 Superconductors Revealed by Pump-Probe Spectroscopy

We report transient optical signatures of the orbital-selective Mottness in superconducting KxFe2-ySe2 crystals by using dual-color pump-probe spectroscopy. Besides multi-exponential decay recovery dynamics of photo-induced quasiparticles, a damped oscillatory component due to coherent acoustic phonons emerges when the superconducting phase is suppressed by increasing the temperature or excitation power. The oscillatory component diminishes with significant enhancement of a slow decay component upon raising temperature to 150-160 K. These results are in consistence with the picture of orbital-selective Mott phase transition, indicating a vital role played by electron correlation in the iron-based superconductors.

cond-mat.supr-con↗

arXiv2013

Defect recombination induced by density-activated carrier diffusion in nonpolar InGaN quantum wells

We report on the observation of carrier-diffusion-induced defect emission at high excitation density in a-plane InGaN single quantum wells. When increasing excitation density in a relatively high regime, we observed the emergence of defect-related emission together with a significant reduction in bandedge emission efficiency. The experimental results can be well explained with the density-activated carrier diffusion from localized states to defect states. Such a scenario of density-activated defect recombination, as confirmed by the dependences of photoluminescence on the excitation photon energy and temperature, is a plausible origin of efficiency droop in a-plane InGaN quantum-well light-emitting diodes.

cond-mat.mes-hall↗

arXiv2012

Ultrafast pump-probe spectroscopic signatures of superconducting and pseudogap phases in YBa2Cu3O7-δ films

Femtosecond pump-probe spectroscopy is applied to identify transient optical signatures of phase transitions in optimally doped YBa2Cu3O7-δ films. To elucidate the dynamics of superconducting and pseudogap phases, the slow thermal component is removed from the time-domain traces of photo-induced reflectivity in a high-flux regime with low frequency pulse rate. The rescaled data exhibit distinct signatures of the phase separation with abrupt changes at the onsets of TSC and TPG in excellent agreement with transport data. Compared to the superconducting phase, the response of the pseudogap phase is characterized by the strongly reduced reflectivity change accompanied by a faster recovery time.

cond-mat.supr-con↗

arXiv2012

Temperature-dependent steady and transient emission properties of InGaN/GaN multiple quantum well nanorods

We observed different temperature-dependent behaviors of steady and transient emission properties in dry-etched InGaN/GaN multiple-quantum-well (MQW) nanorods and the parent MQWs. To clarify the impacts of nanofabrication on the emission properties, time-resolved photoluminescence spectra were recorded at various temperatures with carrier density in different regimes. The confinement of carrier transport was observed to play an important role to the emission properties in nanorods, inducing different temperature-dependent photoluminescence decay rates between the nanorods and MQWs. Moreover, together with other effects, such as surface damages and partial relaxation of the strain, the confinement effect causes faster recombination of carriers in nanorods.

cond-mat.mes-hall↗

arXiv2007

Resonance fluorescence from a coherently driven semiconductor quantum dot in a cavity

We show that resonance fluorescence, i.e. the resonant emission of a coherently driven two-level system, can be realized with a semiconductor quantum dot. The dot is embedded in a planar optical micro-cavity and excited in a wave-guide mode so as to discriminate its emission from residual laser scattering. The transition from the weak to the strong excitation regime is characterized by the emergence of oscillations in the first-order correlation function of the fluorescence, g(t), as measured by interferometry. The measurements correspond to a Mollow triplet with a Rabi splitting of up to 13.3 micro eV. Second-order-correlation measurements further confirm non-classical light emission.

cond-mat.mtrl-sci↗