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Xinjie Fang

Publications and source records attributed to Xinjie Fang.

6 recordsLinked to original sources

Layer-engineered quantum anomalous Hall effect in twisted rhombohedral graphene

Realizing programmable topological states in quantum anomalous Hall (QAH) insulators requires the ability to design and dynamically tune their topological invariant, the Chern number C. Here, we report a designer QAH platform based on twisted rhombohedral graphene family, in which C becomes a programmable and electrically tunable degree of freedom. By engineering the layer configuration in twisted monolayer-rhombohedral N-layer graphene, denoted as (1+N)L, we realize QAH states with C=N at moire filling v=1, where the layer number N=3,4,5 directly sets the Chern number. Beyond such static layer programming, we demonstrate in-situ electrical control. In a twisted monolayer-trilayer device, the sign of C (chirality) can be switched by electrostatic doping or displacement field. Most strikingly, in twisted Bernal bilayer-rhombohedral tetralayer graphene denoted as (2+4)L, we drive a displacement-field-induced topological phase transition between two distinct QAH states with C=3 and C=4 in a single device. Our work establishes a layer-engineered and electrically tunable platform that transitions topological quantum matter from discovery to design, opening the way toward on-demand engineering of correlated topological states and reconfigurable topological electronics.

cond-mat.mes-hall

Heavy fermion phase diagram in magic-angle twisted trilayer graphene

The interplay between localized magnetic moments and itinerant electrons gives rise to exotic quantum states in condensed matter systems. Here, we demonstrate an electrically tunable heavy fermion phase diagram in magic-angle twisted trilayer graphene, achieved by controlling the Kondo hybridization between localized flat-band electrons and itinerant Dirac electrons via a displacement field. Our results reveal a continuous quantum phase transition from an antiferromagnetic semimetal to a paramagnetic heavy fermion metal. At quantum critical point, we observe effective mass divergence and Fermi surface reconstruction. This highly tunable platform offers unprecedented control over heavy fermion physics, establishing moire heterostructures as a versatile arena for exploring correlated quantum phases-including potential unconventional superconductivity-in two-dimensional limit.

cond-mat.mes-hall

Finite-dimensional approximations of random attractor for stochastic discrete complex Ginzburg-Landau equations

In this paper, we apply an implicit Euler scheme to discretize the complex Ginzburg-Landau equation and prove the existence of a numerical attractor for the discrete Ginzburg-Landau system. We establish the upper semicontinuity of the numerical attractor with respect to the global attractor as the time step tends to zero. Furthermore, we provide finite-dimensional approximations for three types of attractors (global, numerical, and random), and demonstrate the existence of truncated attractors along with their convergence as the dimension of the state space tends to infinity. Finally, we prove the existence of a random attractor and establish the upper semi-continuity both of the global random attractor and the truncated random attractor.

math.NA

Spin-orbit-driven quarter semimetals in rhombohedral graphene

Semimetals exhibit intriguing characteristics attributed to the coexistence of both electrons and holes. In rhombohedral multilayer graphene, a strong trigonal warping effect gives rise to a semi-metallic state near the Fermi surface, offering unique opportunities to explore the interplay of semi-metallic properties with strong correlations and topologies. Here, the observation of quarter semimetals in rhombohedral multilayer graphene by introducing spin-orbit coupling (SOC) is reported. The semi-metallic characteristics of rhombohedral graphene manifest as nearly vanished Hall resistance and parabolic longitudinal resistance. The strong correlations arising from the surface flat band lead to spontaneous symmetry breaking. SOC proximitized by WSe2 further lifts the valley degeneracy, resulting in the spontaneous time-reversal symmetry breaking, as evidenced by the hysteretic anomalous Hall effect. The coexistence of fully polarized electrons and holes allows for the observation of a non-monotonic temperature dependence of the anomalous Hall resistance. Furthermore, the application of moderate magnetic fields induces a phase transition from quarter semimetals to Chern insulators. These findings establish rhombohedral multilayer graphene as an ideal platform for studying strong correlations and topologies in semimetals.

cond-mat.mes-hall

Diverse high-Chern-number quantum anomalous Hall insulators in twisted rhombohedral graphene

Quantum anomalous Hall (QAH) insulators with high Chern number (C) enables multiple dissipationless edge channels for low-power-consumption electronics. We report the realization of multiple high-C QAH insulators including C=3,5,6, and 7 in twisted monolayer-rhombohedral pentalayer graphene. In twist angles of approximately 1.40°, we observe QAH effect with C=5 at a filling of one electron per moiré unit cell, persisting up to 2 Kelvin. Furthermore, incommensurate QAH insulators with C=5,6, and 7 emerge at partial fillings. In twist angles of 0.89°, Chern insulators with C=3 and C=6 appear at fillings of two and three electrons, respectively. Our findings establish twisted rhombohedral multilayer graphene as a highly tunable platform for multichannel, dissipationless electronics and for the exploration of exotic quantum Hall states beyond traditional Landau level paradigm.

cond-mat.mes-hall

Engineering band structures of two-dimensional materials with remote moire ferroelectricity

The stacking order and twist angle provide abundant opportunities for engineering band structures of two-dimensional materials, including the formation of moire bands, flat bands, and topologically nontrivial bands. The inversion symmetry breaking in rhombohedral-stacked transitional metal dichalcogenides (TMDCs) endows them with an interfacial ferroelectricity associated with an out-of-plane electric polarization. By utilizing twist angle as a knob to construct rhombohedral-stacked TMDCs, antiferroelectric domain networks with alternating out-of-plane polarization can be generated. Here, we demonstrate that such spatially periodic ferroelectric polarizations in parallel-stacked twisted WSe2 can imprint their moire potential onto a remote bilayer graphene. This remote moire potential gives rise to pronounced satellite resistance peaks besides the charge-neutrality point in graphene, which are tunable by the twist angle of WSe2. Our observations of ferroelectric hysteresis at finite displacement fields suggest the moire is delivered by a long-range electrostatic potential. The constructed superlattices by moire ferroelectricity represent a highly flexible approach, as they involve the separation of the moire construction layer from the electronic transport layer. This remote moire is identified as a weak potential and can coexist with conventional moire. Our results offer a comprehensive strategy for engineering band structures and properties of two-dimensional materials by utilizing moire ferroelectricity.

cond-mat.mtrl-sci