arXiv subjects

Xinliang Feng

Publications and source records attributed to Xinliang Feng.

49 records · Page 3Linked to original sources

arXiv2019

Band Gap of Atomically Precise Graphene Nanoribbons as a Function of Ribbon Length and Termination

We study the band gap of finite $N_A=7$ armchair graphene nanoribbons (7-AGNRs) on Au(111) through scanning tunneling microscopy/spectroscopy combined with density functional theory calculations. The band gap of 7-AGNRs with lengths of 6 nm and more is converged to within 0.1 eV of its bulk value of 2.3 eV, while the band gap opens by several hundred meV in very short 7-AGNRs. The termination has a significant effect on the band gap, doubly hydrogenated termini yielding a lower band gap than singly hydrogenated ones.

cond-mat.mes-hall↗

arXiv2019

Multi-wavelength Raman Spectroscopy of Ultra-narrow Nanoribbons Made by Solution-mediated Bottom-up Approach

Here we present a combined experimental and theoretical study of graphene nanoribbons (GNRs), where detailed multi-wavelength Raman measurements are integrated by accurate ab initio simulations. Our study covers several ultra-narrow GNRs, obtained by means of solution-based bottom-up synthetic approach, allowing to rationalize the effect of edge morphology, position and type of functional groups as well as the length on the GNR Raman spectrum. We show that the low-energy region, especially in presence of bulky functional groups is populated by several modes, and a single radial breathing-like mode cannot be identified. In the Raman optical region, we find that, except for the fully-brominated case, all GNRs functionalized at the edges with different side groups show a characteristic dispersion of the D peak (8-22 cm-1/eV). This has been attributed to the internal degrees of freedom of these functional groups, which act as dispersion-activating defects. The G peak shows small to negligible dispersion in most of the cases, with larger values only in presence of poor control of the edges functionalization, exceeding the values reported for highly defected graphene. In conclusion, we have shown that the characteristic dispersion of the G and D peaks offer further insight on the GNR structure and functionalization, by making Raman spectroscopy an important tool for the characterization of GNRs.

cond-mat.mtrl-sci↗

arXiv2019

WS2-graphite dual-ion battery

A novel WS2-graphite dual-ion battery (DIB) is developed by combining together a conventional graphite cathode and high-capacity few-layer WS2 flakes anode. The WS2 flakes are produced by exploiting wet-jet milling (WJM) exfoliation, which allows mass production of few-layer WS2 flakes in dispersion, with an exfoliation yield of 100%. The WS2-anodes enable DIBs, based on hexafluorophosphate (PF6-) and lithium (Li+) ions, to achieve charge specific capacities of 457, 438, 421, 403, 295 and 169 mAh g-1 at current rates of 0.1, 0.2, 0.3, 0.4, 0.8 and 1.0 A g-1, respectively, outperforming conventional DIBs. The WS2-based DIBs operate in the 0 to 4 V cell voltage range, thus extending the operating voltage window of conventional WS2-based Li-ion batteries (LIBs). These results demonstrate a new route towards the exploitation of WS2, and possibly other transition metal dichalcogenides (TMDs), for the development of next-generation energy storage devices.

cond-mat.mtrl-sci↗

arXiv2019

Structure-dependent electrical properties of graphene nanoribbon devices with graphene electrodes

Graphene nanoribbons (GNRs) are a novel and intriguing class of materials in the field of nanoelectronics, since their properties, solely defined by their width and edge type, are controllable with high precision directly from synthesis. Here we study the correlation between the GNR structure and the corresponding device electrical properties. We investigated a series of field effect devices consisting of a film of armchair GNRs with different structures (namely width and/or length) as the transistor channel, contacted with narrowly spaced graphene sheets as the source-drain electrodes. By analyzing several tens of junctions for each individual GNR type, we observe that the values of the output current display a width-dependent behavior, indicating electronic bandgaps in good agreement with the predicted theoretical values. These results provide insights into the link between the ribbon structure and the device properties, which are fundamental for the development of GNR-based electronics.

cond-mat.mes-hall↗

arXiv2019

Substrate transfer and ex situ characterization of on-surface synthesized graphene nanoribbons

Recent progress in the on-surface synthesis of graphene nanoribbons (GNRs) has given access to atomically precise narrow GNRs with tunable electronic band gaps that makes them excellent candidates for room-temperature switching devices such as field-effect transistors (FET). However, in spite of their exceptional properties, significant challenges remain for GNR processing and characterization. This contribution addresses some of the most important challenges, including GNR fabrication scalability, substrate transfer, long-term stability under ambient conditions and ex situ characterization. We focus on 7- and 9-atom wide armchair graphene nanoribbons (i.e, 7-AGNR; and 9-AGNR) grown on 200 nm Au(111)/mica substrates using a high throughput system. Transfer of both, 7- and 9-AGNRs from their Au growth sub-strate onto various target substrates for additional characterization is accomplished utilizing a polymer-free method that avoids residual contamination. This results in a homogeneous GNR film morphology with very few tears and wrinkles, as examined by atomic force microscopy. Raman spectroscopy indicates no significant degradation of GNR quality upon substrate transfer, and reveals that GNRs have remarkable stability under ambient conditions over a 24-month period. The transferred GNRs are analyzed using multi-wavelength Raman spectroscopy, which provides detailed insight into the wavelength dependence of the width-specific vibrational modes. Finally, we characterize the optical properties of 7- and 9-AGNRs via ultra-violet-visible (UV-Vis) spectroscopy

cond-mat.mtrl-sci↗

arXiv2018

Engineering of robust topological quantum phases in graphene nanoribbons

Here we present a flexible strategy to realize robust nanomaterials exhibiting valence electronic structures whose fundamental physics is described by the SSH-Hamiltonian. These solid-state materials are realized using atomically precise graphene nanoribbons (GNR). We demonstrate the controlled periodic coupling of topological boundary states at junctions of armchair GNRs of different widths to create quasi-1D trivial and non-trivial electronic quantum phases. Their topological class is experimentally determined by drawing upon the bulk-boundary correspondence and measuring the presence (non-trivial) or absence (trivial) of localized end states by scanning tunneling spectroscopy (STS). The strategy we propose has the potential to tune the band width of the topological electronic bands close to the energy scale of proximity induced spin-orbit coupling or superconductivity, and may allow the realization of Kitaev like Hamiltonians and Majorana type end states.

cond-mat.mes-hall↗

arXiv2017

Short-Channel Field Effect Transistors with 9-Atom and 13-Atom wide Graphene Nanoribbons

Bottom-up synthesized GNRs and GNR heterostructures have promising electronic properties for high performance field effect transistors (FETs) and ultra-low power devices such as tunnelling FETs. However, the short length and wide band gap of these GNRs have prevented the fabrication of devices with the desired performance and switching behaviour. Here, by fabricating short channel (Lch ~20 nm) devices with a thin, high-k gate dielectric and a 9-atom wide (0.95 nm) armchair GNR as the channel material, we demonstrate FETs with high on-current (Ion >1 uA at Vd = -1 V) and high Ion/Ioff ~10^5 at room temperature. We find that the performance of these devices is limited by tunnelling through the Schottky barrier (SB) at the contacts and we observe an increase in the transparency of the barrier by increasing the gate field near the contacts. Our results thus demonstrate successful fabrication of high performance short-channel FETs with bottom-up synthesized armchair GNRs.

cond-mat.mes-hall↗

arXiv2016

Raman fingerprints of atomically precise graphene nanoribbons

Bottom-up approaches allow the production of ultra-narrow and atomically precise graphene nanoribbons (GNRs), with electronic and optical properties controlled by the specific atomic structure. Combining Raman spectroscopy and ab-initio simulations, we show that GNR width, edge geometry and functional groups all influence their Raman spectra. The low-energy spectral region below 1000 cm-1 is particularly sensitive to edge morphology and functionalization, while the D peak dispersion can be used to uniquely fingerprint the presence of GNRs, and differentiates them from other sp2 carbon nanostructures.

cond-mat.mes-hall↗

arXiv2016

Superlubricity of Graphene Nanoribbons on Gold Surfaces

The state of vanishing friction known as superlubricity has important applications for energy saving and increasing the lifetime of devices. Superlubricity detected with atomic force microscopy appears in examples like sliding large graphite flakes or gold nanoclusters across surfaces. However, the origin of the behavior is poorly understood due to the lack of a controllable nano-contact. We demonstrate graphene nanoribbons superlubricity when sliding on gold with a joint experimental and computational approach. The atomically well-defined contact allows us to trace the origin of superlubricity, unravelling the role played by edges, surface reconstruction and ribbon elasticity. Our results pave the way to the scale-up of superlubricity toward the realization of frictionless coatings.

cond-mat.mes-hall↗

arXiv2015

On-surface synthesis of graphene nanoribbons with zigzag edge topology

Graphene-based nanostructures exhibit a vast range of exciting electronic properties that are absent in extended graphene. For example, quantum confinement in carbon nanotubes and armchair graphene nanoribbons (AGNRs) leads to the opening of substantial electronic band gaps that are directly linked to their structural boundary conditions. Even more intriguing are nanostructures with zigzag edges, which are expected to host spin-polarized electronic edge states and can thus serve as key elements for graphene-based spintronics. The most prominent example is zigzag graphene nanoribbons (ZGNRs) for which the edge states are predicted to couple ferromagnetically along the edge and antiferromagnetically between them. So far, a direct observation of the spin-polarized edge states for specifically designed and controlled zigzag edge topologies has not been achieved. This is mainly due to the limited precision of current top-down approaches, which results in poorly defined edge structures. Bottom-up fabrication approaches, on the other hand, were so far only successfully applied to the growth of AGNRs and related structures. Here, we describe the successful bottom-up synthesis of ZGNRs, which are fabricated by the surface-assisted colligation and cyclodehydrogenation of specifically designed precursor monomers including carbon groups that yield atomically precise zigzag edges. Using scanning tunnelling spectroscopy we prove the existence of edge-localized states with large energy splittings. We expect that the availability of ZGNRs will finally allow the characterization of their predicted spin-related properties such as spin confinement and filtering, and ultimately add the spin degree of freedom to graphene-based circuitry.

cond-mat.mtrl-sci↗

arXiv2015

Giant edge state splitting at atomically precise zigzag edges

Zigzag edges of graphene nanostructures host localized electronic states that are predicted to be spin-polarized. However, these edge states are highly susceptible to edge roughness and interaction with a supporting substrate, complicating the study of their intrinsic electronic and magnetic structure. Here, we focus on atomically precise graphene nanoribbons whose two short zigzag edges host exactly one localized electron each. Using the tip of a scanning tunneling microscope, the graphene nanoribbons are transferred from the metallic growth substrate onto insulating islands of NaCl in order to decouple their electronic structure from the metal. The absence of charge transfer and hybridization with the substrate is confirmed by scanning tunneling spectroscopy (STS), which reveals a pair of occupied / unoccupied edge states. Their large energy splitting of 1.9 eV is in accordance with ab initio many-body perturbation theory calculations and reflects the dominant role of electron-electron interactions in these localized states.

cond-mat.mtrl-sci↗

arXiv2014

Electronic Band Dispersion of Graphene Nanoribbons via Fourier-Transformed Scanning Tunneling Spectroscopy

Atomically precise armchair graphene nanoribbons of width $N=7$ (7-AGNRs) are investigated by scanning tunneling spectroscopy (STS) on Au(111). The analysis of energy-dependent standing wave patterns of finite length ribbons allows, by Fourier transformation, the direct extraction of the dispersion relation of frontier electronic states. Aided by density functional theory calculations, we assign the states to the valence band, the conduction band and the next empty band of 7-AGNRs, determine effective masses of $0.42\pm 0.08\,m_e$, $0.40\pm 0.18\,m_e$ and $0.20\pm 0.03\,m_e$, respectively, and a band gap of $2.37\pm 0.06$ eV.

cond-mat.mes-hall↗

arXiv2013

Turbostratic graphitic microstructures: electronically decoupled multilayer graphene devices with robust high charge carrier mobility

Carbon nanomaterials continue to amaze scientists due to their exceptional physical properties. Recently there have been theoretical predictions and first reports on graphene multilayers, where, due to the rotation of the stacked layers, outstanding electronic properties are retained while the susceptibility to degradation and mechanical stress is strongly reduced due to the multilayer nature. Here we show that fully turbostratic multilayer graphitic microstructures combine the high charge carrier mobilities necessary for advanced electronic and spintronic devices with the robustness of graphitic structures. Structural characterization of disk-shaped graphitic microstructures using Raman spectroscopy and Transmission Electron Microscopy (TEM) reveals Moiré and diffraction patterns corroborating their turbostratic nature. Electronic transport characterization yields reproducible high mobilities > 105 cm^2(Vs)^(-1) independent of the disks thickness, which is a direct consequence of the electronic decoupling induced by the turbostratic stacking.

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