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Xinran Wang

Publications and source records attributed to Xinran Wang.

At least 91 records · Page 5Linked to original sources

Aging the Cu-doped Bi2Te3 crystals for the topological transport and its atomic tunneling-clustering dynamics

We report on the observation of the two-dimensional weak antilocalization in (Cu0.1Bi0.9)2Te3.06 crystals relying on measurements of the magnetoresistance in a tilted field. The dephasing analysis and scanning tunneling spectroscopy corroborate the transport of the topological surface states (SS). The SSs contribute 3.3% conductance in 30μm-thick material and become dominant in the 100nm-thick flakes. Such optimized topological SS transport is achieved by an intense aging process, when the bulk conductance is suppressed by four orders of magnitude in the long period. Scanning tunneling microscopy reveals that Cu atoms are initially inside the quintuple layers and migrate to the layer gaps to form Cu clusters during the aging. In combination with first-principles calculations, an atomic tunneling-clustering procedure across a diffusion barrier of 0.57eV is proposed.

cond-mat.mtrl-sci↗

Hopping Transport through Defect-induced Localized States in Molybdenum Disulfide

Molybdenum disulfide is a novel two-dimensional semiconductor with potential applications in electronic and optoelectronic devices. However, the nature of charge transport in back-gated devices still remains elusive as they show much lower mobility than theoretical calculations and native n-type doping. Here we report transport study in few-layer molybdenum disulfide, together with transmission electron microscopy and density functional theory. We provide direct evidence that sulfur vacancies exist in molybdenum disulfide, introducing localized donor states inside the bandgap. Under low carrier densities, the transport exhibits nearest-neighbor hopping at high temperatures and variable-range hopping at low temperatures, which can be well explained under Mott formalism. We suggest that the low-carrier-density transport is dominated by hopping via these localized gap states. Our study reveals the important role of short-range surface defects in tailoring the properties and device applications of molybdenum disulfide.

cond-mat.mtrl-sci↗

Graphene Nanoribbons with Smooth Edges Behave as Quantum Wires

Graphene nanoribbons with perfect edges are predicted to exhibit interesting electronic and spintronic properties, notably quantum-confined bandgaps and magnetic edge states. However, graphene nanoribbons produced by lithography have, to date, exhibited rough edges and low-temperature transport characteristics dominated by defects, mainly variable range hopping between localized states in a transport gap near the Dirac point. Here, we report that one- and two-layer nanoribbons quantum dots made by unzipping carbon nanotubes10 exhibit well-defined quantum transport phenomena, including Coulomb blockade, Kondo effect, clear excited states up to ~20meV, and inelastic co-tunnelling. Along with signatures of intrinsic quantum-confined bandgaps and high conductivities, our data indicate that the nanoribbons behave as clean quantum wires at low temperatures, and are not dominated by defects.

cond-mat.mes-hall↗

Thermally-Limited Current Carrying Ability of Graphene Nanoribbons

We investigate high-field transport in graphene nanoribbons (GNRs) on SiO2, up to breakdown. The maximum current density is limited by self-heating, but can reach >3 mA/um for GNRs ~15 nm wide. Comparison with larger, micron-sized graphene devices reveals that narrow GNRs benefit from 3D heat spreading into the SiO2, which enables their higher current density. GNRs also benefit from lateral heat flow to the contacts in short devices (< ~0.3 um), which allows extraction of a median GNR thermal conductivity (TC), ~80 W/m/K at 20 C across our samples, dominated by phonons. The TC of GNRs is an order of magnitude lower than that of micron-sized graphene on SiO2, suggesting strong roles of edge and defect scattering, and the importance of thermal dissipation in small GNR devices.

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Graphene nanoribbons from unzipped carbon nanotubes: atomic structures, Raman spectroscopy and electrical properties

We investigated the atomic structures, Raman spectroscopic and electrical transport properties of individual graphene nanoribbons (GNRs, widths ~10-30 nm) derived from sonochemical unzipping of multi-walled carbon nanotubes (MWNTs). Aberration-corrected transmission electron microscopy (TEM) revealed a high percentage of two-layer (2L) GNRs and some single layer ribbons. The layer-layer stacking angles ranged from 0o to 30o including average chiral angles near 30o (armchair orientation) or 0o (zigzag orientation). A large fraction of GNRs with bent and smooth edges was observed, while the rest showing flat and less smooth edges (roughness \leq 1 nm). Polarized Raman spectroscopy probed individual GNRs to reveal D/G ratios and ratios of D band intensities at parallel and perpendicular laser excitation polarization (D///D\bot). The observed spectroscopic trends were used to infer the average chiral angles and edge smoothness of GNRs. Electrical transport and Raman measurements were carried out for individual ribbons to correlate spectroscopic and electrical properties of GNRs.

cond-mat.mtrl-sci↗

Metal-Enhanced Fluorescence of Carbon Nanotubes

The photoluminescence (PL) quantum yield of single-walled carbon nanotubes (SWNTs) is relatively low, with various quenching effects by metallic species reported in the literature. Here, we report the first case of metal enhanced fluorescence (MEF) of surfactant-coated carbon nanotubes on nanostructured gold substrates. The photoluminescence quantum yield of SWNTs is observed to be enhanced more than 10-fold. The dependence of fluorescence enhancement on metal-nanotube distance and on surface plasmon resonance (SPR) of the gold substrate for various SWNT chiralities is measured to reveal the mechanism of enhancement. Surfactant-coated SWNTs in direct contact with metal exhibit strong MEF without quenching, suggesting a small quenching distance for SWNTs on the order of the van der Waals distance, beyond which the intrinsically fast non-radiative decay rate in nanotubes is little enhanced by metal. The metal enhanced fluorescence of SWNTs is attributed to radiative lifetime shortening through resonance coupling of SWNT emission to the re-radiating dipolar plasmonic modes in the metal.

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Etching and Narrowing of Graphene from the Edges

Large scale graphene electronics desires lithographic patterning of narrow graphene nanoribbons (GNRs) for device integration. However, conventional lithography can only reliably pattern ~20nm wide GNR arrays limited by lithography resolution, while sub-5nm GNRs are desirable for high on/off ratio field-effect transistors (FETs) at room temperature. Here, we devised a gas phase chemical approach to etch graphene from the edges without damaging its basal plane. The reaction involved high temperature oxidation of graphene in a slightly reducing environment to afford controlled etch rate (\leq ~1nm/min). We fabricated ~20-30nm wide GNR arrays lithographically, and used the gas phase etching chemistry to narrow the ribbons down to <10nm. For the first time, high on/off ratio up to ~10^4 was achieved at room temperature for FETs built with sub-5nm wide GNR semiconductors derived from lithographic patterning and narrowing. Our controlled etching method opens up a chemical way to control the size of various graphene nano-structures beyond the capability of top-down lithography.

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Facile Synthesis of High Quality Graphene Nanoribbons

Graphene nanoribbons have attracted attention for their novel electronic and spin transport properties1-6, and because nanoribbons less than 10 nm wide have a band gap that can be used to make field effect transistors. However, producing nanoribbons of very high quality, or in high volumes, remains a challenge. Here, we show that pristine few-layer nanoribbons can be produced by unzipping mildly gas-phase oxidized multiwalled carbon nanotube using mechanical sonication in an organic solvent. The nanoribbons exhibit very high quality, with smooth edges (as seen by high-resolution transmission electron microscopy), low ratios of disorder to graphitic Raman bands, and the highest electrical conductance and mobility reported to date (up to 5e2/h and 1500 cm2/Vs for ribbons 10-20 nm in width). Further, at low temperature, the nanoribbons exhibit phase coherent transport and Fabry-Perot interference, suggesting minimal defects and edge roughness. The yield of nanoribbons was ~2% of the starting raw nanotube soot material, which was significantly higher than previous methods capable of producing high quality narrow nanoribbons1. The relatively high yield synthesis of pristine graphene nanoribbons will make these materials easily accessible for a wide range of fundamental and practical applications.

cond-mat.mtrl-sci↗

Edge Magneto-Fingerprints in Disordered Graphene Nanoribbons

We report on (magneto)-transport experiments in chemically derived narrow graphene nanoribbons under high magnetic fields (up to 60 Tesla). Evidences of field-dependent electronic confinement features are given, and allow estimating the possible ribbon edge symmetry. Besides, the measured large positive magnetoconductance indicates a strong suppression of backscattering induced by the magnetic field. Such scenario is supported by quantum simulations which consider different types of underlying disorders (smooth edge disorder and long range Coulomb scatters).

cond-mat.mes-hall↗

Chemical Self Assembly of Graphene Sheets

Chemically derived graphene sheets were found to self-assemble onto patterned gold structures via electrostatic interactions between noncovalent functional groups on GS and gold. This afforded regular arrays of single graphene sheets on large substrates, characterized by scanning electron and Auger microscopy imaging and Raman spectroscopy. Self assembly was used for the first time to produce on-substrate and fully-suspended graphene electrical devices. Molecular coatings on the GS were removed by high current electrical annealing, which recovered the high electrical conductance and Dirac point of the GS. Molecular sensors for highly sensitive gas detections are demonstrated with self-assembled GS devices.

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Optical Characterizations and Electronic Devices of Nearly Pure (10,5) Single-Walled Carbon Nanotubes

It remains an elusive goal to achieve high performance single-walled carbon nanotube (SWNTs) field effect transistors (FETs) comprised of only single chirality SWNTs. Many separation mechanisms have been devised and various degrees of separation demonstrated, yet it is still difficult to reach the goal of total fractionation of a given nanotube mixture into its single chirality components. Chromatography has been reported to separate small SWNTs (diameter less than 0.9nm) according to their diameter, chirality and length. The separation efficiency decreased with increasing tube diameter by using ssDNA sequence d(GT)n (n=10-45). Here we report our result on the separation of single chirality (10,5) SWNTs (diameter = 1.03nm) from HiPco tubes with ion exchange chromatography. The separation efficiency was improved by using a new DNA sequence (TTTA)3T which can recognize SWNTs with the specific chirality (10,5). The chirality of the separated tubes was examined by optical absorption, Raman, photoluminescence excitation/emission and electrical transport measurement. All spectroscopic methods gave single peak of (10,5) tubes. The purity was 99% according to the electrical measurement. The FETs comprised of separated SWNTs in parallel gave Ion/Ioff ratio up to 106 owning to the single chirality enriched (10,5) tubes. This is the first time that SWNT FETs with single chirality SWNTs were achieved. The chromatography method has the potential to separate even larger diameter semiconducting SWNTs from other starting material for further improving the performance of the SWNT FETs.

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Protein Microarrays with Carbon Nanotubes as Multi-Color Raman Labels

Detection of biomolecules is important in proteomics and clinical diagnosis and treatment of diseases. Here, we apply functionalized, macromolecular, single walled carbon nanotubes SWNTs as multi-color Raman labels to protein arrays for highly sensitive, multiplexed protein detection. Raman detection utilizes the sharp peaks of SWNTs with minimal background interference, affording a high signal to noise ratio needed for ultra-sensitive detection. Surface-enhanced Raman scattering SERS combined with the strong resonance Raman intensity of SWNTs, affords detection sensitivity down to 1 fM, a three order of magnitude improvement over most of reported fluorescence-based protein detections. We show that human autoantibodies to Proteinase 3 aPR3, a biomarker for the autoimmune disease Wegeners granulomatosis, is detected by Raman in human serum up to a 107 dilution. Moreover, SWNT Raman tags are stable against photobleaching and quenching, and by conjugating different antibodies to pure 12C and 13C SWNT isotopes, we demonstrate two-color SWNT Raman-based protein detection in a multiplexed fashion.

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Highly Conducting Graphene Sheets and Langmuir-Blodgett Films

Graphene is an intriguing material with properties that are distinct from those of other graphitic systems. The first samples of pristine graphene were obtained by peeling off and epitaxial growth. Recently, the chemical reduction of graphite oxide was used to produce covalently functionalized single-layer graphene oxide. However, chemical approaches for the large-scale production of highly conducting graphene sheets remain elusive. Here, we report that the exfoliation-reintercalation-expansion of graphite can produce high-quality single-layer graphene sheets stably suspended in organic solvents. The graphene sheets exhibit high electrical conductance at room and cryogenic temperatures. Large amounts of graphene sheets in organic solvents are made into large transparent conducting films by Langmuir-Blodgett assembly in a layer-by-layer manner. The chemically derived high quality graphene sheets could lead to future scalable graphene devices.

cond-mat.mtrl-sci↗

Atomic Layer Deposition of Metal Oxides on Pristine and Functionalized Graphene

We investigate Atomic Layer Deposition (ALD) of metal oxide on pristine and functionalized graphene. On pristine graphene, ALD coating can only actively grow on edges and defect sites, where dangling bonds or surface groups react with ALD precursors. This affords a simple method to decorate and probe single defect sites in graphene planes. We used perylene tetracarboxylic acid (PTCA) to functionalize graphene surface and selectively introduced densely packed surface groups on graphene. Uniform ultrathin ALD coating on PTCA graphene was achieved over large area. The functionalization method could be used to integrate ultrathin high-k dielectrics in future graphene electronics.

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Room Temperature All Semiconducting sub-10nm Graphene Nanoribbon Field-Effect Transistors

Sub-10nm wide graphene nanoribbon field-effect transistors (GNRFETs) are studied systematically. All sub-10nm GNRs afforded semiconducting FETs without exception, with Ion/Ioff ratio up to 10^6 and on-state current density as high as ~2000uA/um. We estimated carrier mobility ~200cm2/Vs and scattering mean free path ~10nm in sub-10nm GNRs. Scattering mechanisms by edges, acoustic phonon and defects are discussed. The sub-10nm GNRFETs are comparable to small diameter (d<=~1.2nm) carbon nanotube FETs with Pd contacts in on-state current density and Ion/Ioff ratio, but have the advantage of producing all-semiconducting devices.

cond-mat.mes-hall↗

Langmuir blodgett assembly of densely aligned single walled carbon nanotubes from bulk materials

Single walled carbon nanotubes exhibit advanced electrical and surface properties useful for high performance nanoelectronics. Important to future manufacturing of nanotube circuits is large scale assembly of SWNTs into aligned forms. Despite progress in assembly and oriented synthesis, pristine SWNTs in aligned and close-packed form remain elusive and needed for high current, speed and density devices through collective operations of parallel SWNTs. Here, we develop a Langmuir Blodgett method achieving monolayers of aligned SWNTs with dense packing, central to which is a non covalent polymer functionalization by PmPV imparting high solubility and stability of SWNTs in an organic solvent DCE. Pressure cycling or annealing during LB film compression reduces hysteresis and facilitates high degree alignment and packing of SWNTs characterized by microscopy and polarized Raman spectroscopy. The monolayer SWNTs are readily patterned for device integration by microfabrication, enabling the highest currents 3mA through the narrowest regions packed with aligned SWNTs thus far.

cond-mat.mtrl-sci↗

Electrically driven thermal light emission from individual single-walled carbon nanotubes

Light emission from nanostructures exhibits rich quantum effects and has broad applications. Single-walled carbon nanotubes (SWNTs) are one-dimensional (1D) metals or semiconductors, in which large number of electronic states in a narrow range of energies, known as van Hove singularities, can lead to strong spectral transitions. Photoluminescence and electroluminescence involving interband transitions and excitons have been observed in semiconducting SWNTs, but are not expected in metallic tubes due to non-radiative relaxations. Here, we show that in the negative differential conductance regime, a suspended quasi-metallic SWNT (QM-SWNT) emits light due to joule-heating, displaying strong peaks in the visible and infrared corresponding to interband transitions. This is a result of thermal light emission in 1D, in stark contrast with featureless blackbody-like emission observed in large bundles of SWNTs or multi-walled nanotubes. This allows for probing of the electronic temperature and non-equilibrium hot optical phonons in joule-heated QM-SWNTs.

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