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Xiubing Li

Publications and source records attributed to Xiubing Li.

3 recordsLinked to original sources

Higher odd-order nonlinear Hall effect in magnetic topological insulator Mn(Bi1-xSbx)2Te4

The nonlinear Hall effect is a new member of the Hall effect family, which attracts intense research interests, and it is closely related to the quantum geometry of quantum materials. The previous studies primarily concentrate on the second-order and third-order nonlinear Hall effect. However, the experimental study of higher-order nonlinear Hall effect is scarce at present. In this work, we report the observations of the higher odd-order (third-, fifth-, seventh-order) nonlinear Hall effect in magnetic topological insulator Mn(Bi1-xSbx)2Te4 thin flakes. The higher odd-order nonlinear Hall voltage exhibits a twofold angular dependence and exists only below the N\'eel temperature. It reaches its maximum near the charge neutral point and decays exponentially as the order of the nonlinear Hall effect increases. Furthermore, such higher odd-order nonlinear Hall effect is observed in both odd- and even-layer samples with comparable magnitudes. Theoretical analysis indicates that the higher odd-order nonlinear Hall effect responses may arise from the Berry curvature multipoles. Our work paves the way for the study of the higher-order nonlinear transport phenomena.

cond-mat.mes-hall

Room-temperature third-order nonlinear anomalous Hall effect in ferromagnetic metal Fe3GaTe2

Berry curvature, as the imaginary component of quantum geometry, plays a crucial role in condensed matter physics. The spatial distribution of Berry curvature can be characterized by its dipole and multipole moments, which can induce the nonlinear anomalous Hall effect (NLAHE). To date, the NLAHE has been demonstrated in various materials, yet reports on room-temperature NLAHE are still limited. In this work, we report the observation of the third-order NLAHE in ferromagnetic metal Fe3GaTe2. The third-order NLAHE shows hysteretic behavior with the variation of magnetic field, where the coercive field is the same as that of the anomalous Hall effect, and the third-order NLAHE remains observable up to the Curie temperature (~350 K). The scaling analysis suggests that the third-order NLAHE may be attributed to the Berry curvature quadrupole. Our work not only provides an approach to study magnetic materials through nonlinear electric transports, but also opens up possibilities for the future development of room-temperature third-order nonlinear electronic devices.

cond-mat.mtrl-sci

Nonlinear Hall effect and scaling law in Sb-doped topological insulator MnBi4Te7

Nonlinear Hall effect (NLHE), as a new member of Hall effect family, has been realized in many materials, attracting a great deal of attention. Here, we report the observation of NLHE in magnetic topological insulator Sb-doped MnBi4Te7 flakes. The NLHE generation efficiency can reach up to 0.06 V^-1, which is comparable to that observed in MnBi2Te4. Differently, the NLHE can survive up to 200 K, much larger than the magnetic transition temperature. We further study the scaling behavior of the NLHE with longitudinal conductivity. The linear relationship with opposite slope when temperature is below and above the magnetic transition temperature is uncovered. It reveals that the NLHE originates from skew scattering. Our work provides a platform to search NLHE with larger generation efficiency at higher temperatures.

cond-mat.mtrl-sci