arXiv subjects

Xiuxia Wang

Publications and source records attributed to Xiuxia Wang.

3 recordsLinked to original sources

arXiv2026

Development of Small-pitch, Ultra-thin 3D Silicon Sensors at USTC

We report on the development of 3D silicon sensors at the University of Science and Technology of China (USTC). The sensor involves columnar electrodes (5 um in diameter) of both doping types, etched from the same wafer side. The p+ electrodes pass through the epitaxial wafer, whereas the n+ electrodes stop at a short distance from the opposite side of the epitaxial wafer. With respect to previous generations of 3D sensors, they feature an ultra-thin active substrate (50 um) and a small pixel size of 50 um x 50 um or 25 um x 25 um. This R&D project aims to establish a sensor technology to simultaneously measure position and time information at the single-pixel level. The first run with one merged wafer layout has been completed. The design, fabrication, and characterization of the sensors are reported in this paper.

physics.ins-det↗

arXiv2023

Research on solitons interactions' in one-dimensional indium chains on Si(111) surfaces

Solitons have garnered significant attention across various fields, yet a contentious debate persists regarding the precise structure of solitons on indium chains. Currently, multiple forms of solitons in one-dimensional atomic chains have been reported. STM provides an effective means to study the precise atomic structure of solitons, particularly their dynamics and interactions. However, limited research has been conducted on soliton interactions and soliton-chain interactions, despite their profound impact on relative soliton motions and the overall physical properties of the system. In this work, we characterized the structures of the soliton dimer and trimer, observed the displacements induced by the soliton entity and statisticized the dynamic behaviors of soliton dimers over time evolution or temperature. To reveal the soliton mechanism, we further utilized STM to investigate the CDWs between two solitons when two monomers were encountered. Additionally, we achieved the manipulation of the monomer on the indium chain by the STM tip. Our work serves as an important approach to elucidate interactions in correlated electronic systems and advance the development of potential topological soliton computers.

cond-mat.mtrl-sci↗

arXiv2011

Atomic structure, energetics, and dynamics of topological solitons in Indium chains on Si(111) surfaces

Based on scanning tunneling microscopy and first-principles theoretical studies, we characterize the precise atomic structure of a topological soliton in In chains grown on Si(111) surfaces. Variable-temperature measurements of the soliton population allow us to determine the soliton formation energy to be ~60 meV, smaller than one half of the band gap of ~200 meV. Once created, these solitons have very low mobility, even though the activation energy is only about 20 meV; the sluggish nature is attributed to the exceptionally low attempt frequency for soliton migration. We further demonstrate local electric field-enhanced soliton dynamics.

cond-mat.mes-hall↗