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Xucun Ma

Publications and source records attributed to Xucun Ma.

At least 19 recordsLinked to original sources

Chiral charge density wave and backscattering-immune orbital texture in monolayer 1T-TiTe2

Non-trivial electronic states are attracting intense attention in low-dimensional physics. Though chirality has been identified in charge states with a scalar order parameter, its intertwining with charge density waves (CDW), film thickness and the impact on the electronic behaviors remain less well understood. Here, using scanning tunneling microscopy, we report a 2 x 2 chiral CDW as well as a strong suppression of the Te-5p hole-band backscattering in monolayer 1T-TiTe2. These exotic characters vanish in bilayer TiTe2 with a non-CDW state. Theoretical calculations approve that chirality comes from a helical stacking of the triple-q CDW components and therefore can persist at the two-dimensional limit. Furthermore, the chirality renders the Te-5p bands an unconventional orbital texture that prohibits electron backscattering. Our study establishes TiTe2 as a promising playground for manipulating the chiral ground states at the monolayer limit and provides a novel path to engineer electronic properties from an orbital degree.

cond-mat.mtrl-sci

Ambi-chiral anomalous Hall effect in magnetically doped topological insulators

The chirality associated with broken time reversal symmetry in magnetically doped topological insulators has important implications to the quantum transport phenomena. Here we report the anomalous Hall effect studies in Mn- and Cr-doped Bi$_2$Te$_3$ topological insulators with varied thickness and doping content. By tracing the chirality of the Hall loops, we find that the Mn-type anomalous Hall effect with clockwise chirality is strengthened by the reduction of film thickness, which is opposite to that of the Cr-type anomalous Hall effect with counterclockwise chirality. We provide a phenomenological model to explain the evolution of magnetic order and anomalous Hall effect chirality in magnetically doped topological insulators.

cond-mat.mes-hall

Presence of $s$-wave pairing in Josephson junctions made of twisted ultrathin Bi$_2$Sr$_2$CaCu$_2$O$_{8+x}$ flakes

Since the discovery of high temperature superconductivity in cuprates, Josephson junction based phase-sensitive experiments are believed and used to provide the most convincing evidence for determining the pairing symmetry. Regardless of different junction materials and geometries used, quantum tunneling involved in these experiments is essentially a nanoscale process, and thus, actual experimental results are extremely sensitive to atomic details of the junction structures. The situation has led to controversial results as to the nature of the pairing symmetry of cuprates: while in-plane junction experiments generally support $d$-wave pairing symmetry, those based on out-of-plane ($c$-axis) Josephson junctions between two rotated cuprate blocks favor $s$-wave pairing. In this work, we revisit the $c$-axis experiment by fabricating Josephson junctions with atomic-level control in their interface structure. We fabricate over 90 junctions of ultrathin Bi$_2$Sr$_2$CaCu$_2$O$_{8+x}$ (BSCCO) flakes by state-of-the-art exfoliation technique and obtain atomically flat junction interfaces in the whole junction regions as characterized by high resolution transmission electron microscopy (TEM). Notably, the resultant uniform junctions at various twist angles all exhibit a single tunneling branch behavior, suggesting that only the first half a unit cell on both sides of the twisted flakes is involved in Josephson tunneling process. With such well-defined geometry/structure and the characteristic single tunneling branch, we repeatedly observe Josephson tunneling at a nominal twist angle of 45 degrees, which is against the expectation from a purely $d$-wave pairing scenario. Our results strongly favor the scenario of a persistent $s$-wave order parameter in the junction.

cond-mat.supr-con

Distinct quantum anomalous Hall ground states induced by magnetic disorders

The quantum anomalous Hall (QAH) effect in magnetic topological insulator (TI) represents a new state of matter originated from the interplay between topology and magnetism. The defining characteristics of the QAH ground state are the quantized Hall resistivity ($ρ_{yx}$) and vanishing longitudinal resistivity ($ρ_{xx}$) in the absence of external magnetic field. A fundamental question concerning the QAH effect is whether it is merely a zero-magnetic-field quantum Hall (QH) effect, or if it can host unique quantum phases and phase transitions that are unavailable elsewhere. The most dramatic departure of the QAH systems from other QH systems lies in the strong magnetic disorders that induce spatially random magnetization. Because disorder and magnetism play pivotal roles in the phase diagram of two-dimensional electron systems, the high degree of magnetic disorders in QAH systems may create novel phases and quantum critical phenomena. In this work, we perform systematic transport studies of a series of magnetic TIs with varied strength of magnetic disorders. We find that the ground state of QAH effect can be categorized into two distinct classes: the QAH insulator and anomalous Hall (AH) insulator phases, as the zero-magnetic-field counterparts of the QH liquid and Hall insulator in the QH systems. In the low disorder limit of the QAH insulator regime, we observe a universal quantized longitudinal resistance $ρ_{xx} = h/e^{2}$ at the coercive field. In the AH insulator regime, we find that a magnetic field can drive it to the QAH insulator phase through a quantum critical point with distinct scaling behaviors from that in the QH phase transition. We propose that the transmission between chiral edge states at domain boundaries, tunable by disorder and magnetic fields, is the key for determining the QAH ground state.

cond-mat.mes-hall

Coulomb gap induced by electronic correlation and enlarged superconducting gap in laterally confined Pb islands grown on SrTiO3

We report high-resolution scanning tunneling microscopy (STM) study of nano-sized Pb islands grown on SrTiO3, where three distinct types of gaps with different energy scales are revealed. At low temperature, an enlarged superconducting gap (Δs) emerges while there is no enhancement in superconducting transition temperature (Tc), giving rise to a larger BCS ratio 2Δs/kBTc ~ 6.22. The strong coupling here may originate from the electron-phonon coupling on the metal-oxide interface. As the superconducting gap is suppressed under applied magnetic field or at elevated temperature, Coulomb gap and pseudogap appear, respectively. The Coulomb gap is sensitive to the lateral size of Pb islands, indicating that quantum size effect is able to influence electronic correlation, which is usually ignored in low-dimensional superconductivity. Our experimental results shall shed important light on the interplay between quantum size effect and correlations in nano-sized superconductors.

cond-mat.supr-con

Edge states at nematic domain walls in FeSe films

Quantum spin Hall (QSH) effect is an intriguing phenomenon arising from the helical edge states in two-dimensional topological insulators. We use molecular beam epitaxy (MBE) to prepare FeSe films with atomically sharp nematic domain boundaries, where tensile strains, nematicity suppression and topological band inversion are simultaneously achieved. Using scanning tunneling microscopy (STM), we observe edge states at the Fermi level that spatially distribute as two distinct strips in the vicinity of the domain boundaries. At the endpoint of the boundaries, a bound state at the Fermi level is further observed. The topological origin of the edge states is supported by density functional theory calculations. Our findings not only demonstrate a candidate for QSH states, but also provide a new pathway to realize topological superconductivity in a single-component film.

cond-mat.supr-con

Realizing an Epitaxial Stanene with an Insulating Bandgap

Stanene, a single atomic layer of Sn in a honeycomb lattice, is predicted a candidate wide bandgap two-dimensional (2D) topological insulator and can host intriguing topological states of matter such as quantum anomalous Hall effect and topological superconductivity with different surface modifications. Despite intensive research efforts, one still cannot obtain bulk-insulating stanene samples-a prerequisite for any transport studies and applications of stanene. Here we show the experimental realization of an epitaxial stanene with an insulating bulk bandgap by using PbTe(111) substrates. With low-temperature molecular beam epitaxy, we are able to grow single layer stanene on PbTe(111). In-situ angle-resolved photoemission spectroscopy shows the characteristic stanene bands with its Fermi level lying in the bandgap. Doping Sr in PbTe removes the substrate states located in the stanene gap, resulting in a stanene sample with truly insulating bulk. This experimental progress paves the way for studies of stanene-based topological quantum effects.

cond-mat.mtrl-sci

Experimental realization of an intrinsic magnetic topological insulator

Intrinsic magnetic topological insulator (TI) is a stoichiometric magnetic compound possessing both inherent magnetic order and topological electronic states. Such a material can provide a shortcut to various novel topological quantum effects but remains elusive experimentally so far. Here, we report the experimental realization of high-quality thin films of an intrinsic magnetic TI---MnBi$_2$Te$_4$---by alternate growth of a Bi$_2$Te$_3$ quintuple-layer and a MnTe bilayer with molecular beam epitaxy. The material shows the archetypical Dirac surface states in angle-resolved photoemission spectroscopy and is demonstrated to be an antiferromagnetic topological insulator with ferromagnetic surfaces by magnetic and transport measurements as well as first-principles calculations. The unique magnetic and topological electronic structures and their interplays enable the material to embody rich quantum phases such as quantum anomalous Hall insulators and axion insulators in a well-controlled way.

cond-mat.mtrl-sci

Origin of charge transfer and enhanced electron-phonon coupling in single unit-cell FeSe films on SrTiO3

Interface charge transfer and electron-phonon coupling have been suggested to play a crucial role in the recently discovered high-temperature superconductivity of single unit-cell FeSe films on SrTiO3. However, their origin remains elusive. Here, using ultraviolet photoemission spectroscopy (UPS) and element-sensitive X-ray photoemission spectroscopy (XPS), we identify the strengthened Ti-O bond that contributes to the interface enhanced electron-phonon coupling and unveil the band bending at the FeSe/SrTiO3 interface that leads to the charge transfer from SrTiO3 to FeSe films. We also observe band renormalization that accompanies the onset of superconductivity. Our results not only provide valuable insights into the mechanism of the interface-enhanced superconductivity, but also point out a promising route towards designing novel superconductors in heterostructures with band-bending induced charge transfer and interfacial enhanced electron-phonon coupling.

cond-mat.supr-con

Dimensional Crossover Induced Topological Hall Effect in a Magnetic Topological Insulator

We report transport studies of Mn-doped Bi2Te3 topological insulator (TI) films with accurately controlled thickness grown by molecular beam epitaxy. We find that films thicker than 5 quintuple-layer (QL) exhibit the usual anomalous Hall effect for magnetic TIs. When the thickness is reduced to 4 QL, however, characteristic features associated with the topological Hall effect (THE) emerge. More surprisingly, the THE vanishes again when the film thickness is further reduced to 3 QL. Theoretical calculations demonstrate that the coupling between the top and bottom surface states at the dimensional crossover regime stabilizes the magnetic skyrmion structure that is responsible for the THE.

cond-mat.mtrl-sci

Enhanced electron dephasing in three-dimensional topological insulators

Study of the dephasing in electronic systems is not only important for probing the nature of their ground states, but also crucial to harnessing the quantum coherence for information processing. In contrast to well-studied conventional metals and semiconductors, it remains unclear which mechanism is mainly responsible for electron dephasing in three-dimensional (3D) topological insulators (TIs). Here, we report on using weak antilocalization effect to measure the dephasing rates in highly tunable (Bi,Sb)$_2$Te$_3$ thin films. As the transport is varied from a bulk-conducting regime to surface-dominant transport, the dephasing rate is observed to evolve from a linear temperature dependence to a sublinear power-law dependence. While the former is consistent with the Nyquist electron-electron interactions commonly seen in ordinary 2D systems, the latter leads to enhanced electron dephasing at low temperatures and is attributed to the coupling between the surface states and the localized charge puddles in the bulk of 3D TIs.

cond-mat.mes-hall

Magnetic quantum phase transition in Cr-doped Bi2(SexTe1-x)3 driven by the Stark effect

The interplay between magnetism and topology, as exemplified in the magnetic skyrmion systems, has emerged as a rich playground for finding novel quantum phenomena and applications in future information technology. Magnetic topological insulators (TI) have attracted much recent attention, especially after the experimental realization of quantum anomalous Hall effect. Future applications of magnetic TI hinge on the accurate manipulation of magnetism and topology by external perturbations, preferably with a gate electric field. In this work, we investigate the magneto transport properties of Cr doped Bi2(SexTe1-x)3 TI across the topological quantum critical point (QCP). We find that the external gate voltage has negligible effect on the magnetic order for samples far away from the topological QCP. But for the sample near the QCP, we observe a ferromagnetic (FM) to paramagnetic (PM) phase transition driven by the gate electric field. Theoretical calculations show that a perpendicular electric field causes a shift of electronic energy levels due to the Stark effect, which induces a topological quantum phase transition and consequently a magnetic phase transition. The in situ electrical control of the topological and magnetic properties of TI shed important new lights on future topological electronic or spintronic device applications.

cond-mat.mtrl-sci

Interface high-temperature superconductivity

Cuprate high temperature superconductors consist of two quasi-two-dimensional (2D) substructures: CuO2 superconducting layers and charge reservoir layers. The superconductivity is realized by charge transfer from the charge reservoir layers into the superconducting layers without chemical dopants and defects being introduced into the latter, similar to modulation-doping in semiconductor superlattices of AlGaAs/GaAs. Inspired by this scheme, we have been searching for high temperature superconductivity in ultrathin films of superconductors epitaxially grown on semiconductor/oxide substrates since 2008. We have observed interface enhanced superconductivity in both conventional and unconventional superconducting films, including single atomic layer films of Pb and In on Si substrates and single unit cell (UC) films of FeSe on SrTiO3 (STO) substrates. The discovery of high temperature superconductivity with a superconducting gap of ~20 meV in 1UC-FeSe/STO has stimulated tremendous interest in superconductivity community, for it opens new avenue for both raising superconducting transition temperature and understanding the pairing mechanism of unconventional high temperature superconductivity. Here, we review mainly the experimental progress on interface enhanced superconductivity in the three systems mentioned above with emphasis on 1UC-FeSe/STO, studied by scanning tunneling microscopy/spectroscopy, angle-resolved photoemission spectroscopy and transport experiments. We discuss the roles of interfaces and possible pairing mechanism inferred from those studies.

cond-mat.supr-con

The Role of SrTiO3 Phonon Penetrating into thin FeSe Films in the Enhancement of Superconductivity

The significant role of interfacial coupling on the superconductivity enhancement in FeSe films on SrTiO3 has been widely recognized. But the explicit origination of this coupling is yet to be identified. Here by surface phonon measurements using high resolution electron energy loss spectroscopy, we found electric field generated by Fuchs-Kliewer (F-K) phonon modes of SrTiO3 can penetrate into FeSe films and strongly interact with electrons therein. The mode-specific electron-phonon coupling (EPC) constant for the ~92 meV F-K phonon is ~0.25 in the single-layer FeSe on SrTiO3. With increasing FeSe thickness, the penetrating field intensity decays exponentially, which matches well the observed exponential decay of the superconducting gap. It is unambiguously shown that the SrTiO3 F-K phonon penetrating into FeSe is essential in the interfacial superconductivity enhancement.

cond-mat.supr-con

Interface induced high temperature superconductivity in single unit-cell FeSe films on SrTiO3(110)

We report high temperature superconductivity in one unit-cell (1-UC) FeSe films grown on STO(110) substrate by molecular beam epitaxy. By in-situ scanning tunneling spectroscopy measurement, we observed a superconducting gap as large as 17 meV. Transport measurements on 1-UC FeSe/STO(110) capped with FeTe layers reveal superconductivity with an onset TC of 31.6 K and an upper critical magnetic field of 30.2 T. We also find that the TC can be further increased by an external electric field, but the effect is smaller than that on STO(001) substrate. The study points out the important roles of interface related charge transfer and electron-phonon coupling in the high temperature superconductivity of FeSe/STO.

cond-mat.supr-con

Superconductivity dichotomy in K-coated single and double unit cell FeSe films on SrTiO3

We report the superconductivity evolution of one unit cell (1-UC) and 2-UC FeSe films on SrTiO3(001) substrates with potassium (K) adsorption. By in situ scanning tunneling spectroscopy measurement, we find that the superconductivity in 1-UC FeSe films is continuously suppressed with increasing K coverage, whereas non-superconducting 2-UC FeSe films become superconducting with a gap of ~17 meV or ~11 meV depending on whether the underlying 1-UC films are superconducting or not. This work explicitly reveals that the interface electron-phonon coupling is strongly related to the charge transfer at FeSe/STO interface and plays vital role in enhancing Cooper pairing in both 1-UC and 2-UC FeSe films.

cond-mat.supr-con

Interface enhanced electron-phonon coupling and high temperature superconductivity in potassium-coated ultra-thin FeSe films on SrTiO3

Alkali-metal (potassium) adsorption on FeSe thin films with thickness from two unit cells (UC) to 4-UC on SrTiO3 grown by molecular beam epitaxy is investigated with a low-temperature scanning tunneling microscope. At appropriate potassium coverage (0.2-0.3 monolayer), the tunneling spectra of the films all exhibit a superconducting-like gap larger than 11 meV (five times the gap value of bulk FeSe), and two distinct features of characteristic phonon modes at 11 meV and 21 meV. The results reveal the critical role of the interface enhanced electron-phonon coupling for possible high temperature superconductivity in the system and is consistent with recent theories. Our study provides compelling evidence for the conventional pairing mechanism for this type of heterostructure superconducting systems.

cond-mat.supr-con

Thickness dependence of superconductivity and superconductor-insulator transition in ultrathin FeSe films on SrTiO3(001) substrate

Interface-enhanced high-temperature superconductivity in one unit-cell (UC) FeSe film on SrTiO3(001) (STO) substrate has recently attracted much attention in condensed matter physics and material science. Here, by ex situ transport measurements, we report on the superconductivity in FeSe ultra-thin films with different thickness on STO substrate. We find that the onset superconducting transition temperature (Tc) decreases with increasing film thickness of FeSe, which is opposite to the behavior usually observed in traditional superconductor films. By systematic post-annealing of 5 UC FeSe films, we observe an insulator to superconductor transition, which is accompanied with a sign change of the dominated charge carriers from holes to electrons at low temperatures according to the corresponding Hall measurement.

cond-mat.supr-con