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Xucun Ma

Publications and source records attributed to Xucun Ma.

At least 55 records · Page 3Linked to original sources
arXiv2013

Mass acquisition of Dirac fermions in Cr-doped topological insulator Sb2Te3 films

We introduce time-reversal-symmetry breaking by doping Cr atoms into the topmost quintuple layer or into the bulk of Sb2Te3 thin films. We find that even at a high Cr-doping level the Landau level spectrum keeps a good quality, enabling the first demonstration of deviation of the zero-mode Landau level, induced by the acquisition of a mass term in the surface states in the presence of surface or bulk magnetic doping. The magnitude of the mass term in the surface states increases with increasing Cr-doping level. Our observation suggests Cr-doped Sb2Te3 is a promising candidate for the realization of the proposed novel magnetoelectric effects.

cond-mat.mtrl-sci↗
arXiv2012

Superconductivity in a single layer alkali-doped FeSe: a weakly coupled two-leg ladder system

We prepare single layer potassium-doped iron selenide (110) film by molecular beam expitaxy. Such a single layer film can be viewed as a two-dimensional system composed of weakly coupled two-leg iron ladders. Scanning tunneling spectroscopy reveals that superconductivity is developed in this two-leg ladder system. The superconducting gap is similar to that of the multi-layer films. However, the Fermi surface topology given by first-principles calculation is remarkably different from that of the bulk materials. Our results suggest that superconducting pairing is very short-ranged or takes place rather locally in iron-chalcogenides. The superconductivity is most likely driven by electron-electron correlation effect and is insensitive to the change of Fermi surfaces.

cond-mat.supr-con↗
arXiv2012

Phase Diagram and High Temperature Superconductivity at 65 K in Tuning Carrier Concentration of Single-Layer FeSe Films

Superconductivity in the cuprate superconductors and the Fe-based superconductors is realized by doping the parent compound with charge carriers, or by application of high pressure, to suppress the antiferromagnetic state. Such a rich phase diagram is important in understanding superconductivity mechanism and other physics in the Cu- and Fe-based high temperature superconductors. In this paper, we report a phase diagram in the single-layer FeSe films grown on SrTiO3 substrate by an annealing procedure to tune the charge carrier concentration over a wide range. A dramatic change of the band structure and Fermi surface is observed, with two distinct phases identified that are competing during the annealing process. Superconductivity with a record high transition temperature (Tc) at ~65 K is realized by optimizing the annealing process. The wide tunability of the system across different phases, and its high-Tc, make the single-layer FeSe film ideal not only to investigate the superconductivity physics and mechanism, but also to study novel quantum phenomena and for potential applications.

cond-mat.supr-con↗
arXiv2012

KFe_2Se_2 is the parent compound of K-doped iron selenide superconductors

We elucidate the existing controversies in the newly discovered K-doped iron selenide (KxFe2-ySe2-z) superconductors. The stoichiometric KFe2Se2 with \surd2\times\surd2 charge ordering was identified as the parent compound of KxFe2-ySe2-z superconductor using scanning tunneling microscopy and spectroscopy. The superconductivity is induced in KFe2Se2 by either Se vacancies or interacting with the anti-ferromagnetic K2Fe4Se5 compound. Totally four phases were found to exist in KxFe2-ySe2-z: parent compound KFe2Se2, superconducting KFe2Se2 with \surd2\times\surd5 charge ordering, superconducting KFe2Se2-z with Se vacancies and insulating K2Fe4Se5 with \surd5\times\surd5 Fe vacancy order. The phase separation takes place at the mesoscopic scale under standard molecular beam epitaxy condition.

cond-mat.supr-con↗
arXiv2012

Electronic Origin of High Temperature Superconductivity in Single-Layer FeSe Superconductor

The latest discovery of high temperature superconductivity signature in single-layer FeSe is significant because it is possible to break the superconducting critical temperature ceiling (maximum Tc~55 K) that has been stagnant since the discovery of Fe-based superconductivity in 2008. It also blows the superconductivity community by surprise because such a high Tc is unexpected in FeSe system with the bulk FeSe exhibiting a Tc at only 8 K at ambient pressure which can be enhanced to 38 K under high pressure. The Tc is still unusually high even considering the newly-discovered intercalated FeSe system A_xFe_{2-y}Se_2 (A=K, Cs, Rb and Tl) with a Tc at 32 K at ambient pressure and possible Tc near 48 K under high pressure. Particularly interesting is that such a high temperature superconductivity occurs in a single-layer FeSe system that is considered as a key building block of the Fe-based superconductors. Understanding the origin of high temperature superconductivity in such a strictly two-dimensional FeSe system is crucial to understanding the superconductivity mechanism in Fe-based superconductors in particular, and providing key insights on how to achieve high temperature superconductivity in general. Here we report distinct electronic structure associated with the single-layer FeSe superconductor. Its Fermi surface topology is different from other Fe-based superconductors; it consists only of electron pockets near the zone corner without indication of any Fermi surface around the zone center. Our observation of large and nearly isotropic superconducting gap in this strictly two-dimensional system rules out existence of node in the superconducting gap. These results have provided an unambiguous case that such a unique electronic structure is favorable for realizing high temperature superconductivity.

cond-mat.supr-con↗
arXiv2012

Anisotropic vortex lattice structures in the FeSe superconductor

In the recent work by Song et al. [Science 332, 1410 (2011)], the scanning tunneling spectroscopy experiment in the stoichiometric FeSe reveals evidence for nodal superconductivity and strong anisotropy. The nodal structure can be explained with the extended s-wave pairing structure with the mixture of the $s_{x^2+y^2}$ and $s_{x^2y^2}$ pairing symmetries. We calculate the anisotropic vortex structure by using the self-consistent Bogoliubov-de Gennes mean-field theory. In considering the absence of magnetic ordering in the FeSe at the ambient pressure, orbital ordering is introduced, which breaks the $C_4$ lattice symmetry down to $C_2$, to explain the anisotropy in the vortex tunneling spectra.

cond-mat.supr-con↗
arXiv2012

Interface induced high temperature superconductivity in single unit-cell FeSe films on SrTiO3

Searching for superconducting materials with high transition temperature (TC) is one of the most exciting and challenging fields in physics and materials science. Although superconductivity has been discovered for more than 100 years, the copper oxides are so far the only materials with TC above 77 K, the liquid nitrogen boiling point. Here we report an interface engineering method for dramatically raising the TC of superconducting films. We find that one unit-cell (UC) thick films of FeSe grown on SrTiO3 (STO) substrates by molecular beam epitaxy (MBE) show signatures of superconducting transition above 50 K by transport measurement. A superconducting gap as large as 20 meV of the 1 UC films observed by scanning tunneling microcopy (STM) suggests that the superconductivity could occur above 77 K. The occurrence of superconductivity is further supported by the presence of superconducting vortices under magnetic field. Our work not only demonstrates a powerful way for finding new superconductors and for raising TC, but also provides a well-defined platform for systematic study of the mechanism of unconventional superconductivity by using different superconducting materials and substrates.

cond-mat.supr-con↗
arXiv2011

Band structure engineering in (Bi1-xSbx)2Te3 ternary topological insulators

Three-dimensional (3D) topological insulators (TI) are novel quantum materials with insulating bulk and topologically protected metallic surfaces with Dirac-like band structure. The spin-helical Dirac surface states are expected to host exotic topological quantum effects and find applications in spintronics and quantum computation. The experimental realization of these ideas requires fabrication of versatile devices based on bulk-insulating TIs with tunable surface states. The main challenge facing the current TI materials exemplified by Bi2Se3 and Bi2Te3 is the significant bulk conduction, which remains unsolved despite extensive efforts involving nanostructuring, chemical doping and electrical gating. Here we report a novel approach for engineering the band structure of TIs by molecular beam epitaxy (MBE) growth of (Bi1-xSbx)2Te3 ternary compounds. Angle-resolved photoemission spectroscopy (ARPES) and transport measurements show that the topological surface states exist over the entire composition range of (Bi1-xSbx)2Te3 (x = 0 to 1), indicating the robustness of bulk Z2 topology. Most remarkably, the systematic band engineering leads to ideal TIs with truly insulating bulk and tunable surface state across the Dirac point that behave like one quarter of graphene. This work demonstrates a new route to achieving intrinsic quantum transport of the topological surface states and designing conceptually new TI devices with well-established semiconductor technology.

cond-mat.mtrl-sci↗
arXiv2011

Landau quantization and the thickness limit of topological insulator thin films of Sb2Te3

We report the experimental observation of Landau quantization of molecular beam epitaxy grown Sb2Te3 thin films by a low-temperature scanning tunneling microscope. Different from all the reported systems, the Landau quantization in Sb2Te3 topological insulator is not sensitive to the intrinsic substitutional defects in the films. As a result, a nearly perfect linear energy dispersion of surface states as 2D massless Dirac fermion system is achieved. We demonstrate that 4 quintuple layers are the thickness limit for Sb2Te3 thin film being a 3D topological insulator. The mechanism of the Landau level broadening is discussed in terms of enhanced quasiparticle lifetime.

cond-mat.mtrl-sci↗
arXiv2011

Fermi Level Tuning of Epitaxial Sb2Te3 Thin Films on Graphene by Regulating Intrinsic Defects and Substrate Transfer Doping

High-quality Sb2Te3 films are obtained by molecular beam epitaxy on graphene substrate and investigated by in situ scanning tunneling microscopy/spectroscopy. Intrinsic defects responsible for the natural p-type conductivity of Sb2Te3 are identified to be the Sb vacancies and SbTe antisites in agreement with first-principles calculations. By minimizing defect densities, coupled with a transfer doping by the graphene substrate, the Fermi level of Sb2Te3 thin films can be tuned over the entire range of the bulk band gap. This establishes the necessary condition to explore topological insulator behaviors near the Dirac point.

cond-mat.mtrl-sci↗
arXiv2011

Phase Separation and Magnetic Order in K-doped Iron Selenide Superconductor

Alkali-doped iron selenide is the latest member of high Tc superconductor family, and its peculiar characters have immediately attracted extensive attention. We prepared high-quality potassium-doped iron selenide (KxFe2-ySe2) thin films by molecular beam epitaxy and unambiguously demonstrated the existence of phase separation, which is currently under debate, in this material using scanning tunneling microscopy and spectroscopy. The stoichiometric superconducting phase KFe2Se2 contains no iron vacancies, while the insulating phase has a \surd5\times\surd5 vacancy order. The iron vacancies are shown always destructive to superconductivity in KFe2Se2. Our study on the subgap bound states induced by the iron vacancies further reveals a magnetically-related bipartite order in the superconducting phase. These findings not only solve the existing controversies in the atomic and electronic structures in KxFe2-ySe2, but also provide valuable information on understanding the superconductivity and its interplay with magnetism in iron-based superconductors.

cond-mat.supr-con↗
arXiv2011

Power-Law Decay of Standing Waves on the Surface of Topological Insulators

We propose a general theory on the standing waves (quasiparticle interference pattern) caused by the scattering of surface states off step edges in topological insulators, in which the extremal points on the constant energy contour of surface band play the dominant role. Experimentally we image the interference patterns on both Bi$_2$Te$_3$ and Bi$_2$Se$_3$ films by measuring the local density of states using a scanning tunneling microscope. The observed decay indices of the standing waves agree excellently with the theoretical prediction: In Bi$_2$Se$_3$, only a single decay index of -3/2 exists; while in Bi$_2$Te$_3$ with strongly warped surface band, it varies from -3/2 to -1/2 and finally to -1 as the energy increases. The -1/2 decay indicates that the suppression of backscattering due to time-reversal symmetry does not necessarily lead to a spatial decay rate faster than that in the conventional two-dimensional electron system. Our formalism can also explain the characteristic scattering wave vectors of the standing wave caused by non-magnetic impurities on Bi$_2$Te$_3$.

cond-mat.mes-hall↗
arXiv2011

Crossover between weak localization and weak antilocalization in magnetically doped topological insulator

Topological insulators (TI) are a new class of quantum materials with insulating bulk enclosed by topologically protected metallic boundaries. The surface states of three-dimensional TIs have spin helical Dirac structure, and are robust against time reversal invariant perturbations. This extraordinary property is notably exemplified by the absence of backscattering by nonmagnetic impurities and the weak antilocalization (WAL) of Dirac fermions. Breaking the time reversal symmetry (TRS) by magnetic element doping is predicted to create a variety of exotic topological magnetoelectric effects. Here we report transport studies on magnetically doped TI Cr-Bi2Se3. With increasing Cr concentration, the low temperature electrical conduction exhibits a characteristic crossover from WAL to weak localization (WL). In the heavily doped regime where WL dominates at the ground state, WAL reenters as temperature rises, but can be driven back to WL by strong magnetic field. These complex phenomena can be explained by a unified picture involving the evolution of Berry phase with the energy gap opened by magnetic impurities. This work demonstrates an effective way to manipulate the topological transport properties of the TI surface states by TRS-breaking perturbations.

cond-mat.mtrl-sci↗
arXiv2010

Electron interaction-driven insulating ground state in Bi2Se3 topological insulators in the two dimensional limit

We report a transport study of ultrathin Bi2Se3 topological insulators with thickness from one quintuple layer to six quintuple layers grown by molecular beam epitaxy. At low temperatures, the film resistance increases logarithmically with decreasing temperature, revealing an insulating ground state. The sharp increase of resistance with magnetic field, however, indicates the existence of weak antilocalization, which should reduce the resistance as temperature decreases. We show that these apparently contradictory behaviors can be understood by considering the electron interaction effect, which plays a crucial role in determining the electronic ground state of topological insulators in the two dimensional limit.

cond-mat.mtrl-sci↗
arXiv2010

Crossover of Three-Dimensional Topological Insulator of Bi2Se3 to the Two-Dimensional Limit

Bi2Se3 is theoretically predicted1 2and experimentally observed2,3 to be a three dimensional topological insulator. For possible applications, it is important to understand the electronic structure of the planar device. In this work, thickness dependent band structure of molecular beam epitaxy grown ultrathin films of Bi2Se3 is investigated by in situ angle-resolved photoemission spectroscopy. An energy gap is observed for the first time in the topologically protected metallic surface states of bulk Bi2Se3 below the thickness of six quintuple layers, due to the coupling between the surface states from two opposite surfaces of the Bi2Se3 film. The gapped surface states exhibit sizable Rashba-type spin-orbit splitting, due to breaking of structural inversion symmetry induced by SiC substrate. The spin-splitting can be controlled by tuning the potential difference between the two surfaces.

cond-mat.mtrl-sci↗
arXiv2010

Topological insulator Bi2Se3 thin films grown on double-layer graphene by molecular beam epitaxy

Atomically flat thin films of topological insulator Bi2Se3 have been grown on double-layer graphene formed on 6H-SiC(0001) substrate by molecular beam epitaxy. By a combined study of reflection high energy electron diffraction and scanning tunneling microscopy, we identified the Se-rich condition and temperature criterion for layer-by-layer growth of epitaxial Bi2Se3 films. The as-grown films without doping exhibit a low defect density of 1.0\pm 0.2x1011/cm2, and become a bulk insulator at a thickness of 10 quintuple layers, as revealed by in situ angle resolved photoemission spectroscopy measurement.

cond-mat.mes-hall↗