arXiv subjects

Xuedong Hu

Publications and source records attributed to Xuedong Hu.

At least 109 records · Page 6Linked to original sources

arXiv2007

Low-decoherence flux qubit

A flux qubit can have a relatively long decoherence time at the degeneracy point, but away from this point the decoherence time is greatly reduced by dephasing. This limits the practical applications of flux qubits. Here we propose a new qubit design modified from the commonly used flux qubit by introducing an additional capacitor shunted in parallel to the smaller Josephson junction (JJ) in the loop. Our results show that the effects of noise can be considerably suppressed, particularly away from the degeneracy point, by both reducing the coupling energy of the JJ and increasing the shunt capacitance. This shunt capacitance provides a novel way to improve the qubit.

cond-mat.supr-con↗

arXiv2007

Dynamical nuclear spin polarization and the Zamboni effect in gated double quantum dots

A dynamical nuclear polarization scheme is studied in gated double dots. We demonstrate that a small polarization ($\sim 0.5%$) is sufficient to enhance the singlet decay time by two orders of magnitude. This enhancement is attributed to an equilibration process between the nuclear reservoirs in the two dots accompanied by reduced fluctuations in the Overhauser fields, that are mediated by the electron-nuclear spin hyperfine interaction.

cond-mat.mes-hall↗

arXiv2006

Equation-of-motion treatment of hyperfine interaction in a quantum dot

Isolated electron spins in semiconductor nanostructures are promising qubit candidates for a solid state quantum computer, There have seen truly impressive experimental progresses in the study of single spins in the past two years. In this paper we analytically solve the {\it Non-Markovian} single electron spin dynamics due to inhomogeneous hyperfine couplings with surrounding nuclei in a quantum dot. We use the equation-of-motion method assisted with a large field expansion in a full quantum mechanical treatment. We recover the exact solution for fully polarized nuclei. By considering virtual nuclear spin flip-flops mediated by the electron, which generate fluctuations in the Overhauser field (the nuclear field) for the electron spin, we find that the decay amplitude of the transverse electron spin correlation function for partially polarized nuclear spin configurations is of the order unity instead of $\text{O}(1/N)$ ($N$ being the number of nuclei in the dot) obtained in previous studies. We show that the complete amplitude decay can be understood with the spectrum broadening of the correlation function near the electron spin Rabi frequency induced by nuclear spin flip-flops. Our results show that a 90% nuclear polarization can enhance the electron spin $T_2$ time by more than one order of magnitude in some parameter regime. In the long time limit, the envelope of the transverse electron spin correlation function has a non-exponential $1/t^2$ decay in the presence of both polarized and unpolarized nuclei.

cond-mat.mes-hall↗

arXiv2006

Producing cluster states in charge qubits and flux qubits

We propose a method to efficiently generate cluster states in charge qubits, both semiconducting and superconducting, as well as flux qubits. We show that highly-entangled cluster states can be realized by a `one-touch' entanglement operation by tuning gate bias voltages for charge qubits. We also investigate the robustness of these cluster states for non-uniform qubits, which are unavoidable in solid-state systems. We find that quantum computation based on cluster states is a promising approach for solid-state qubits.

cond-mat.str-el↗

arXiv2006

Analytical Solution of Electron Spin Decoherence Through Hyperfine Interaction in a Quantum Dot

We analytically solve the {\it Non-Markovian} single electron spin dynamics due to hyperfine interaction with surrounding nuclei in a quantum dot. We use the equation-of-motion method assisted with a large field expansion, and find that virtual nuclear spin flip-flops mediated by the electron contribute significantly to a complete decoherence of transverse electron spin correlation function. Our results show that a 90% nuclear polarization can enhance the electron spin $T_2$ time by almost two orders of magnitude. In the long time limit, the electron spin correlation function has a non-exponential $1/t^2$ decay in the presence of both polarized and unpolarized nuclei.

cond-mat.mes-hall↗

arXiv2006

Charge fluctuation induced dephasing of exchange coupled spin qubits

Exchange coupled {\it spin} qubits in semiconductor nanostructures are shown to be vulnerable to dephasing caused by {\it charge noise} invariably present in the semiconductor environment. This decoherence of exchange gate by environmental charge fluctuations arises from the fundamental Coulombic nature of the Heisenberg coupling, and presents a serious challenge to the scalability of the widely studied exchange gate solid state spin quantum computer architectures. We estimate dephasing times for coupled spin qubits in a wide range (from 1 ns up to $> 1 μ$s) depending on the exchange coupling strength and its sensitivity to charge fluctuations.

cond-mat.mes-hall↗

arXiv2006

Quantum control of donor electrons at the Si-SiO2 interface

Prospects for the quantum control of electrons in the silicon quantum computer architecture are considered theoretically. In particular, we investigate the feasibility of shuttling donor-bound electrons between the impurity in the bulk and the Si-SiO2 interface by tuning an external electric field. We calculate the shuttling time to range from sub-picoseconds to nanoseconds depending on the distance (~ 10-50 nm) of the donor from the interface. Our results establish that quantum control in such nanostructure architectures could, in principle, be achieved.

cond-mat.mes-hall↗

arXiv2006

Quantum electromechanics: Quantum tunneling near resonance and qubits from buckling nanobars

Analyzing recent experimental results, we find similar behaviors and a deep analogy between three-junction superconducting qubits and suspended carbon nanotubes. When these different systems are ac-driven near their resonances, the resonance single-peak, observed at weak driving, splits into two sub-peaks (Fig. 1) when the driving increases. This unusual behavior can be explained by considering quantum tunneling in a double well potential for both systems. Inspired by these experiments, we propose a mechanical qubit based on buckling nanobars--a NEMS so small as to be quantum coherent. To establish buckling nanobars as legitimate candidates for qubits, we calculate the effective buckling potential that produces the two-level system and identify the tunnel coupling between the two local states. We propose different designs of nanomechanical qubits and describe how they can be manipulated. Also, we outline possible decoherence channels and detection schemes. A comparison between nanobars and well studied superconducting qubits suggests several future experiments on quantum electromechanics.

cond-mat.mes-hall↗

arXiv2005

Electric field driven donor-based charge qubits in semiconductors

We investigate theoretically donor-based charge qubit operation driven by external electric fields. The basic physics of the problem is presented by considering a single electron bound to a shallow-donor pair in GaAs: This system is closely related to the homopolar molecular ion H_2^+. In the case of Si, heteropolar configurations such as PSb^+ pairs are also considered. For both homopolar and heteropolar pairs, the multivalley conduction band structure of Si leads to short-period oscillations of the tunnel-coupling strength as a function of the inter-donor relative position. However, for any fixed donor configuration, the response of the bound electron to a uniform electric field in Si is qualitatively very similar to the GaAs case, with no valley quantum interference-related effects, leading to the conclusion that electric field driven coherent manipulation of donor-based charge qubits is feasible in semiconductors.

cond-mat.mtrl-sci↗

arXiv2005

Nuclear spin diffusion in semiconductor nanostructures: Effects of inhomogeneous hyperfine interactions

We study the effect of contact hyperfine interaction on the nuclear spin diffusion coefficients in semiconductor quantum dots. The diffusion coefficients are calculated with both the method of moment and density matrix. We show that nuclear spin diffusion is strongly suppressed by the nonuniform hyperfine coupling resulting from the confined electron wavefunction. Our results agree with the observed suppression of nuclear spin diffusion in these structures in recent experiments, and clarify the degree of validity of the method of moment in an inhomogeneous system.

cond-mat.mes-hall↗

arXiv2005

Correlation-induced suppression of decoherence in capacitively coupled Cooper-pair boxes

Charge fluctuations from gate bias and background traps severely limit the performance of a charge qubit in a Cooper-pair box (CPB). Here we present an experimentally realizable method to control the decoherence effects of these charge fluctuations using two strongly capacitively coupled CPBs. This coupled-box system has a low-decoherence subspace of two states. Our results show that the inter-box Coulomb correlation can help significantly suppress decoherence of this two-level system, making it a promising candidate as a logical qubit, encoded using two CPBs.

cond-mat.supr-con↗

arXiv2005

Semiconductor charge qubit relaxation due to two-phonon processes

We theoretically study the relaxation of electron orbital states of a double quantum dot system due to two-phonon processes. In particular, we calculate how the relaxation rates depend on the separation distance between the quantum dots, the strength of quantum dot confinement, and the lattice temperature. Enhancement of the rates by specific inter-dot distances and lattice temperatures, and the relative strength of different scattering channels are discussed. Our results show that although at low temperatures ($T \sim 1$ K) two-phonon processes are almost four orders of magnitude weaker compared to one-phonon processes in relaxing electron orbital states, at room temperature they are as important as one-phonon processes.

cond-mat.mes-hall↗

arXiv2005

Charge decoherence in laterally coupled quantum dots due to electron-phonon interactions

We investigate electron charge decoherence in a laterally-coupled single-electron semiconductor double quantum dot through electron-phonon interaction. We analytically and numerically evaluate the relaxation and dephasing rates due to electron coupling to both acoustic and optical phonons, and explore the system parameter space in terms of interdot distance, strength of single-dot confinement, and inter-dot coupling strength. Our numerical results show that the electron scattering rates are strongly dependent on the strength of the electron confinement and the size of the system. In addition, although the most dominant factor that determines the charge decoherence rate is the energy splitting between the charge qubit states, the details of the double dot configuration is also very important.

cond-mat.mes-hall↗

arXiv2005

Silicon-based spin and charge quantum computation

Silicon-based quantum-computer architectures have attracted attention because of their promise for scalability and their potential for synergetically utilizing the available resources associated with the existing Si technology infrastructure. Electronic and nuclear spins of shallow donors (e.g. phosphorus) in Si are ideal candidates for qubits in such proposals due to the relatively long spin coherence times. For these spin qubits, donor electron charge manipulation by external gates is a key ingredient for control and read-out of single-qubit operations, while shallow donor exchange gates are frequently invoked to perform two-qubit operations. More recently, charge qubits based on tunnel coupling in P$_2^+$ substitutional molecular ions in Si have also been proposed. We discuss the feasibility of the building blocks involved in shallow donor quantum computation in silicon, taking into account the peculiarities of silicon electronic structure, in particular the six degenerate states at the conduction band edge. We show that quantum interference among these states does not significantly affect operations involving a single donor, but leads to fast oscillations in electron exchange coupling and on tunnel-coupling strength when the donor pair relative position is changed on a lattice-parameter scale. These studies illustrate the considerable potential as well as the tremendous challenges posed by donor spin and charge as candidates for qubits in silicon.

cond-mat.mtrl-sci↗

arXiv2004

Quantum electromechanics: Qubits from buckling nanobars

We propose a mechanical qubit based on buckling nanobars--a NEMS so small as to be quantum coherent.To establish buckling nanobars as legitimate candidates for qubits, we calculate the effective buckling potential that produces the two-level system and identify the tunnel coupling between the two local states. We propose different designs of nanomechanical qubits and describe how they can be manipulated. Also we outline possible decoherence channels and detection schemes. A comparison between the well studied charge and flux superconducting qubits suggests several experimental setups which could be realized using available technology.

cond-mat.mes-hall↗

arXiv2004

Charge qubits in semiconductor quantum computer architectures: Tunnel coupling and decoherence

We consider charge qubits based on shallow donor electron states in silicon and coupled quantum dots in GaAs. Specifically, we study the feasibility of P$_2^+$ charge qubits in Si, focusing on single qubit properties in terms of tunnel coupling between the two phosphorus donors and qubit decoherence caused by electron-phonon interaction. By taking into consideration the multi-valley structure of the Si conduction band, we show that inter-valley quantum interference has important consequences for single-qubit operations of P$_2^+$ charge qubits. In particular, the valley interference leads to a tunnel-coupling strength distribution centered around zero. On the other hand, we find that the Si bandstructure does not dramatically affect the electron-phonon coupling and consequently, qubit coherence. We also critically compare charge qubit properties for Si:P$_2^+$ and GaAs double quantum dot quantum computer architectures.

cond-mat.mes-hall↗

arXiv2004

Spin quantum computation in silicon nanostructures

Proposed silicon-based quantum-computer architectures have attracted attention because of their promise for scalability and their potential for synergetically utilizing the available resources associated with the existing Si technology infrastructure. Electronic and nuclear spins of shallow donors (e.g. phosphorus) in Si are ideal candidates for qubits in such proposals because of their long spin coherence times due to their limited interactions with their environments. For these spin qubits, shallow donor exchange gates are frequently invoked to perform two-qubit operations. We discuss in this review a particularly important spin decoherence channel, and bandstructure effects on the exchange gate control. Specifically, we review our work on donor electron spin spectral diffusion due to background nuclear spin flip-flops, and how isotopic purification of silicon can significantly enhance the electron spin dephasing time. We then review our calculation of donor electron exchange coupling in the presence of degenerate silicon conduction band valleys. We show that valley interference leads to orders of magnitude variations in electron exchange coupling when donor configurations are changed on an atomic scale. These studies illustrate the substantial potential that donor electron/nuclear spins in silicon have as candidates for qubits and simultaneously the considerable challenges they pose. In particular, our work on spin decoherence through spectral diffusion points to the possible importance of isotopic purification in the fabrication of scalable solid state quantum computer architectures. We also provide a critical comparison between the two main proposed spin-based solid state quantum computer architectures, namely, shallow donor bound states in Si and localized quantum dot states in GaAs.

cond-mat.mes-hall↗

arXiv2004

Spin swap gate in the presence of qubit inhomogeneity in a double quantum dot

We study theoretically the effects of qubit inhomogeneity on the quantum logic gate of qubit swap, which is an integral part of the operations of a quantum computer. Our focus here is to construct a robust pulse sequence for swap operation in the simultaneous presence of Zeeman inhomogeneity for quantum dot trapped electron spins and the finite-time ramp-up of exchange coupling in a double dot. We first present a geometric explanation of spin swap operation, mapping the two-qubit operation onto a single-qubit rotation. We then show that in this geometric picture a square-pulse-sequence can be easily designed to perform swap in the presence of Zeeman inhomogeneity. Finally, we investigate how finite ramp-up times for the exchange coupling $J$ negatively affect the performance of the swap gate sequence, and show how to correct the problems numerically.

cond-mat.mes-hall↗