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Y. Arakawa

Publications and source records attributed to Y. Arakawa.

27 records · Page 2Linked to original sources

Laser oscillation in a strongly coupled single quantum dot-nanocavity system

Strong coupling of photons and materials in semiconductor nanocavity systems has been investigated because of its potentials in quantum information processing and related applications, and has been testbeds for cavity quantum electrodynamics (QED). Interesting phenomena such as coherent exchange of a single quantum between a single quantum dot and an optical cavity, called vacuum Rabi oscillation, and highly efficient cavity QED lasers have been reported thus far. The coexistence of vacuum Rabi oscillation and laser oscillation appears to be contradictory in nature, because the fragile reversible process may not survive in laser oscillation. However, recently, it has been theoretically predicted that the strong-coupling effect could be sustained in laser oscillation in properly designed semiconductor systems. Nevertheless, the experimental realization of this phenomenon has remained difficult since the first demonstration of the strong-coupling, because an extremely high cavity quality factor and strong light-matter coupling are both required for this purpose. Here, we demonstrate the onset of laser oscillation in the strong-coupling regime in a single quantum dot (SQD)-cavity system. A high-quality semiconductor optical nanocavity and strong SQD-field coupling enabled to the onset of lasing while maintaining the fragile coherent exchange of quanta between the SQD and the cavity. In addition to the interesting physical features, this device is seen as a prototype of an ultimate solid state light source with an SQD gain, which operates at ultra-low power, with expected applications in future nanophotonic integrated systems and monolithic quantum information devices.

cond-mat.other↗

Spin-Related Current Suppression in a Semiconductor-Quantum-Dot Spin-Diode Structure

We experimentally study the transport features of electrons in a spin-diode structure consisting of a single semiconductor quantum dot (QD) weakly coupled to one nonmagnetic (NM) and one ferromagnetic (FM) lead, in which the QD has an artificial atomic nature. A Coulomb stability diamond shows asymmetric features with respect to the polarity of the bias voltage. For the regime of two-electron tunneling, we find anomalous suppression of the current for both forward and reverse bias. We discuss possible mechanisms of the anomalous current suppression in terms of spin blockade via the QD/FM interface at the ground state of a two-electron QD.

cond-mat.mes-hall↗

Fine and Large Coulomb Diamonds in a Silicon Quantum Dot

We experimentally study the transport properties of silicon quantum dots (QDs) fabricated from a highly doped n-type silicon-on-insulator wafer. Low noise electrical measurements using a low temperature complementary metal-oxide-semiconductor (LTCMOS) amplifier are performed at 4.2 K in liquid helium. Two series of Coulomb peaks are observed: long-period oscillations and fine structures, and both of them show clear source drain voltage dependence. We also observe two series of Coulomb diamonds having different periodicity. The obtained experimental results are well reproduced by a master equation analysis using a model of double QDs coupled in parallel.

cond-mat.mes-hall↗

Kondo effect in a semiconductor quantum dot coupled to ferromagnetic electrodes

Using a laterally-fabricated quantum-dot (QD) spin-valve device, we experimentally study the Kondo effect in the electron transport through a semiconductor QD with an odd number of electrons (N). In a parallel magnetic configuration of the ferromagnetic electrodes, the Kondo resonance at N = 3 splits clearly without external magnetic fields. With applying magnetic fields (B), the splitting is gradually reduced, and then the Kondo effect is almost restored at B = 1.2 T. This means that, in the Kondo regime, an inverse effective magnetic field of B ~ 1.2 T can be applied to the QD in the parallel magnetic configuration of the ferromagnetic electrodes.

cond-mat.mes-hall↗

Electric-field control of tunneling magnetoresistance effect in a Ni/InAs/Ni quantum-dot spin valve

We demonstrate an electric-field control of tunneling magnetoresistance (TMR) effect in a semiconductor quantum-dot (QD) spin-valve device. By using ferromagnetic Ni nano-gap electrodes, we observe the Coulomb blockade oscillations at a small bias voltage. In the vicinity of the Coulomb blockade peak, the TMR effect is significantly modulated and even its sign is switched by changing the gate voltage, where the sign of the TMR value changes at the resonant condition.

cond-mat.mes-hall↗

Spin transport through a single self-assembled InAs quantum dot with ferromagnetic leads

We have fabricated a lateral double barrier magnetic tunnel junction (MTJ) which consists of a single self-assembled InAs quantum dot (QD) with ferromagnetic Co leads. The MTJ shows clear hysteretic tunnel magnetoresistance (TMR) effect, which is evidence for spin transport through a single semiconductor QD. The TMR ratio and the curve shapes are varied by changing the gate voltage.

cond-mat.mes-hall↗

Direct observation of acoustic phonon mediated relaxation between coupled exciton states in a single quantum dot molecule

We probe acoustic phonon mediated relaxation between tunnel coupled exciton states in an individual quantum dot molecule in which the inter-dot quantum coupling and energy separation between exciton states is continuously tuned using static electric field. Time resolved and temperature dependent optical spectroscopy are used to probe inter-level relaxation around the point of maximum coupling. The radiative lifetimes of the coupled excitonic states can be tuned from ~2 ns to ~10 ns as the spatially direct and indirect character of the wavefunction is varied by detuning from resonance. Acoustic phonon mediated inter-level relaxation is shown to proceed over timescales comparable to the direct exciton radiative lifetime, indicative of a relaxation bottleneck for level spacings in the range $ΔE\$ ~3-6 meV.

cond-mat.mes-hall↗

Spin-dependent edge-channel transport in a Si/SiGe quantum Hall system

We study the edge-channel transport of electrons in a high-mobility Si/SiGe two-dimensional electron system in the quantum Hall regime. By selectively populating the spin-resolved edge channels, we observe suppression of the scattering between two edge channels with spin-up and spin-down. In contrast, when the Zeeman splitting of the spin-resolved levels is enlarged with tilting magnetic field direction, the spin orientations of both the relevant edge channels are switched to spin-down, and the inter-edge-channel scattering is strongly promoted. The evident spin dependence of the adiabatic edge-channel transport is an individual feature in silicon-based two-dimensional electron systems, originating from a weak spin-orbit interaction.

cond-mat.mes-hall↗

Optical diffraction spectroscopy of excitons in uniaxially-strained GaN films

The degenerate four-wave mixing spectroscopy of uniaxially strained GaN layers is demonstrated using colinearly polarized laser pulses. The nonlinear response of FWM signal on exciton oscillator strength enhances the sensitivity for polarized exciton, allowing for mapping out the in-plane anisotropy of the strain field. The observed high-contrast spectral polarization clearly shows fine structure splittings of excitons, which are also confirmed in the change of quantum beating periods of time.

cond-mat.other↗