arXiv subjects

Y. H. Wu

Publications and source records attributed to Y. H. Wu.

8 recordsLinked to original sources

arXiv2020

High brightness CW electron beams from Superconducting RF photoemission gun

CW photoinjectors operating at high accelerating gradients promise to revolutionize many areas of science and applications. They can establish the basis for a new generation of monochromatic X-ray free electron lasers, high brightness hadron beams, or a new generation of microchip production. In this letter we report on the record-performing superconducting RF electron gun with $\textrm{CsK}_{2}\textrm{Sb}$ photocathode. The gun is generating high charge electron bunches (up to 10 nC/bunch) and low transverse emittances, while operating for months with a single photocathode. This achievement opens a new era in generating high-power beams with a very high average brightness.

physics.acc-ph↗

arXiv2019

Anisotropic Landau level splitting and Lifshitz transition induced magnetoresistance enhancement in ZrTe5 crystals

Magneto-transport study has been performed in ZrTe5 single crystals. The observed Shubnikov-de Hass quantum oscillation at low temperature clearly demonstrates the existence of a nontrivial band with small effective mass in ZrTe5. Furthermore, we also revealed the 3D anisotropic nature of high-field Landau level splitting in ZrTe5, very different from the 2D behavior measured in previous transport studies. Besides these, an abnormal large enhancement of magnetoresistance appears at high temperatures, which is believed to arise from the Lifshitz transition induced two-carrier transport in ZrTe5. Our study provides more understanding of the physical properties of ZrTe5 and sheds light on potential application of ZrTe5 in spintronics.

cond-mat.mtrl-sci↗

arXiv2016

The effect of inserted NiO layer on spin-Hall magnetoresistance in Pt/NiO/YIG heterostructures

We investigate the spin-current transport through antiferromagnetic insulator (AFMI) by means of the spin-Hall magnetoressitance (SMR) over a wide temperature range in Pt/NiO/Y$_3$Fe$_5$O$_{12}$ (Pt/NiO/YIG) heterostructures. By inserting the AFMI NiO layer, the SMR dramatically decreases by decreasing the temperature down to the antiferromagnetically ordered state of NiO, which implies that the AFM order prevents rather than promotes the spin-current transport. On the other hand, the magnetic proximity effect (MPE) on induced Pt moments by YIG, which entangles with the spin-Hall effect (SHE) in Pt, can be efficiently screened, and pure SMR can be derived by insertion of NiO. The dual roles of the NiO insertion including efficiently blocking the MPE and transporting the spin current from Pt to YIG are outstanding compared with other antiferromagnetic (AFM) metal or nonmagnetic metal (NM).

cond-mat.mtrl-sci↗

arXiv2016

Investigation of anomalous-Hall and spin-Hall effects of antiferromagnetic IrMn sandwiched by Pt and YIG layers

We report an investigation of temperature and IrMn layered thickness dependence of anomalous-Hall resistance (AHR), anisotropic magnetoresistance (AMR), and magnetization on Pt/Ir20Mn80/Y3Fe5O12 (Pt/IrMn/YIG) heterostructures. The magnitude of AHR is dramatically enhanced compared with Pt/YIG bilayers. The enhancement is much more profound at higher temperatures and peaks at the IrMn thickness of 3 nm. The observed spin-Hall magnetoresistance (SMR) in the temperature range of 10-300 K indicates that the spin current generated in the Pt layer can penetrate the entire thickness of the IrMn layer to interact with the YIG layer. The lack of conventional anisotropic magnetoresistance (CAMR) implies that the insertion of the IrMn layer between Pt and YIG efficiently suppresses the magnetic proximity effect (MPE) on induced Pt moments by YIG. Our results suggest that the dual roles of the InMn insertion in Pt/IrMn/YIG heterostructures are to block the MPE and to transport the spin current between Pt and YIG layers. We discuss possible mechanisms for the enhanced AHR.

cond-mat.str-el↗

arXiv2015

Pure spin-Hall magnetoresistance in Rh/Y3Fe5O12 hybrid

We report an investigation of anisotropic magnetoresistance (AMR) and anomalous Hall resistance (AHR) of Rh and Pt thin films sputtered on epitaxial Y$_3$Fe$_5$O$_{12}$ (YIG) ferromagnetic insulator films. For the Pt/YIG hybrid, large spin-Hall magnetoresistance (SMR) along with a sizable conventional anisotropic magnetoresistance (CAMR) and a nontrivial temperature dependence of AHR were observed in the temperature range of 5-300 K. In contrast, a reduced SMR with negligible CAMR and AHR was found in Rh/YIG hybrid. Since CAMR and AHR are characteristics for all ferromagnetic metals, our results suggest that the Pt is likely magnetized by YIG due to the magnetic proximity effect (MPE) while Rh remains free of MPE. Thus the Rh/YIG hybrid could be an ideal model system to explore physics and devices associated with pure spin current.

cond-mat.mes-hall↗

arXiv2015

Extraordinary Hall resistance and unconventional magnetoresistance in Pt/LaCoO3 hybrids

We report an investigation of transverse Hall resistance and longitudinal resistance on Pt thin films sputtered on epitaxial LaCoO$_3$ (LCO) ferromagnetic insulator films. The LaCoO$_3$ films were deposited on several single crystalline substrates [LaAlO$_3$ (LAO), (La,Sr)(Al,Ta)O$_3$ (LSAT), and SrTiO$_3$ (STO)] with (001) orientation. The physical properties of LaCoO$_3$ films were characterized by the measurements of magnetic and transport properties. The LaCoO$_3$ films undergo a paramagnetic to ferromagnetic (FM) transition at Curie temperatures ranging from 40 K to 85 K, below which the Pt/LCO hybrids exhibit significant extraordinary Hall resistance (EHR) up to 50 m$Ω$ and unconventional magnetoresistance (UCMR) ratio $Δ$$ρ$/$ρ_0$ about $1.2 \times 10^{-4}$, accompanied by the conventional magnetoresistance (CMR). The observed spin transport properties share some common features as well as some unique characteristics when compared with well-studied Y$_3$Fe$_5$O$_{12}$-based Pt thin films. Our findings call for new theories since the extraordinary Hall resistance and magnetoresistance cannot be consistently explained by the existing theories.

cond-mat.str-el↗

arXiv2009

Structural, optical, magnetic and electrical properties of Zn1-x Co (x) O thin films

Despite a considerable effort aiming at elucidating the nature of ferromagnetism in ZnO-based magnetic semiconductor, its origin still remains debatable. Although the observation of above room temperature ferromagnetism has been reported frequently in the literature by magnetometry measurement, so far there has been no report on correlated ferromagnetism in magnetic, optical and electrical measurements. In this paper, we investigate systematically the structural, optical, magnetic and electrical properties of Zn1-x Co (x) O:Al thin films prepared by sputtering with x ranging from 0 to 0.33. We show that correlated ferromagnetism is present only in samples with x > 0.25. In contrast, samples with x < 0.2 exhibit weak ferromagnetism only in magnetometry measurement which is absent in optical and electrical measurements. We demonstrate, by systematic electrical transport studies that carrier localization indeed occurs below 20-50 K for samples with x < 0.2; however, this does not lead to the formation of ferromagnetic phase in these samples with an electron concentration in the range of 6 x 10(19) cm(-3) 1 x 10(20) cm(-3). Detailed structural and optical transmission spectroscopy analyses revealed that the anomalous Hall effect observed in samples with x > 0.25 is due to the formation of secondary phases and Co clusters.

cond-mat.mtrl-sci↗

arXiv2008

Pseudo spin-orbit coupling of Dirac particles in graphene spintronics

We study the pseudo spin-orbital (SO) effects experienced by massive Dirac particles in graphene, which can potentially be of a larger magnitude compared to the conventional Rashba SO effects experienced by particles in a 2DEG semiconductor heterostructure. In order to generate a uniform vertical pseudo SO field, we propose an artificial atomic structure, consisting of a graphene ring and a charged nanodot at the center which produces a large radial electric field. In this structure, a large pseudo SO coupling strength can be achieved by accelerating the Dirac particles around the ring, due to the small energy gap in graphene and the large radial electric field emanating from the charged nanodot. We discuss the theoretical possibility of harnessing the pseudo SO effects in mesoscopic applications, e.g. pseudo spin relaxation and switching.

cond-mat.mes-hall↗