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arXiv · 1604.03272

The effect of inserted NiO layer on spin-Hall magnetoresistance in Pt/NiO/YIG heterostructures

T. Shang·Q. F. Zhan·H. L. Yang·Z. H. Zuo·Y. L. Xie·L. P. Liu·S. L. Zhang·Y. Zhang·H. H. Li·B. M. Wang·Y. H. Wu·S. Zhang·Run-Wei Li
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Abstract

We investigate the spin-current transport through antiferromagnetic insulator (AFMI) by means of the spin-Hall magnetoressitance (SMR) over a wide temperature range in Pt/NiO/Y$_3$Fe$_5$O$_{12}$ (Pt/NiO/YIG) heterostructures. By inserting the AFMI NiO layer, the SMR dramatically decreases by decreasing the temperature down to the antiferromagnetically ordered state of NiO, which implies that the AFM order prevents rather than promotes the spin-current transport. On the other hand, the magnetic proximity effect (MPE) on induced Pt moments by YIG, which entangles with the spin-Hall effect (SHE) in Pt, can be efficiently screened, and pure SMR can be derived by insertion of NiO. The dual roles of the NiO insertion including efficiently blocking the MPE and transporting the spin current from Pt to YIG are outstanding compared with other antiferromagnetic (AFM) metal or nonmagnetic metal (NM).

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T. Shang, Q. F. Zhan, H. L. Yang, Z. H. Zuo, Y. L. Xie, L. P. Liu, S. L. Zhang, Y. Zhang, H. H. Li, B. M. Wang, Y. H. Wu, S. Zhang, Run-Wei Li. 2016-04-22. The effect of inserted NiO layer on spin-Hall magnetoresistance in Pt/NiO/YIG heterostructures. https://doi.org/10.1063/1.4959573

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