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Y. L. Chen

Publications and source records attributed to Y. L. Chen.

48 records · Page 3Linked to original sources

Distinct Electronic Structure for the Extreme Magnetoresistance in YSb

An extreme magnetoresistance (XMR) has recently been observed in several non-magnetic semimetals. Increasing experimental and theoretical evidence indicates that the XMR can be driven by either topological protection or electron-hole compensation. Here, by investigating the electronic structure of a XMR material, YSb, we present spectroscopic evidence for a special case which lacks topological protection and perfect electron-hole compensation. Further investigations reveal that a cooperative action of a substantial difference between electron and hole mobility and a moderate carrier compensation might contribute to the XMR in YSb.

cond-mat.str-el↗

Observation of the Type-II Weyl Semimetal Phase in MoTe2

Topological Weyl semimetal (TWS), a new state of quantum matter, has sparked enormous research interest recently. Possessing unique Weyl fermions in the bulk and Fermi arcs on the surface, TWSs offer a rare platform for realizing many exotic physical phenomena. TWSs can be classified into type-I that respect Lorentz symmetry and type-II that do not. Here, we directly visualize the electronic structure of MoTe2, a recently proposed type-II TWS. Using angle-resolved photoemission spectroscopy (ARPES), we unravel the unique surface Fermi arcs, in good agreement with our ab-initio calculations. From spin-resolved ARPES measurements, we demonstrate the non-degenerate spin-texture of surface Fermi-arcs, thereby proving their non-trivial topological nature. Our work not only lead to new understandings of the unusual properties discovered in this family of compounds, but also allow for the further exploration of exotic properties and practical applications of type-II TWSs, as well as the interplay between superconductivity (MoTe2 was discovered to be superconducting recently) and their topological order.

cond-mat.mtrl-sci↗

Emergence of the nematic electronic state in FeSe

We present a comprehensive study of the evolution of the nematic electronic structure of FeSe using high resolution angle-resolved photoemission spectroscopy (ARPES), quantum oscillations in the normal state and elastoresistance measurements. Our high resolution ARPES allows us to track the Fermi surface deformation from four-fold to two-fold symmetry across the structural transition at ~87 K which is stabilized as a result of the dramatic splitting of bands associated with dxz and dyz character. The low temperature Fermi surface is that a compensated metal consisting of one hole and two electron bands and is fully determined by combining the knowledge from ARPES and quantum oscillations. A manifestation of the nematic state is the significant increase in the nematic susceptibility as approaching the structural transition that we detect from our elastoresistance measurements on FeSe. The dramatic changes in electronic structure cannot be explained by the small lattice effects and, in the absence of magnetic fluctuations above the structural transition, points clearly towards an electronically driven transition in FeSe stabilized by orbital-charge ordering.

cond-mat.supr-con↗

Linear magnetoresistance caused by mobility fluctuations in the n-doped Cd3As2

Cd3As2 is a candidate three-dimensional Dirac semi-metal which has exceedingly high mobility and non-saturating linear magnetoresistance that may be relevant for future practical applications. We report magnetotransport and tunnel diode oscillation measurements on Cd3As2, in magnetic fields up to 65 T and temperatures between 1.5K to 300K. We find the non-saturating linear magnetoresistance persist up to 65T and it is likely caused by disorder effects as it scales with the high mobility, rather than directly linked to Fermi surface changes even when approaching the quantum limit. From the observed quantum oscillations, we determine the bulk three-dimensional Fermi surface having signatures of Dirac behaviour with non-trivial Berry's phase shift, very light effective quasiparticle masses and clear deviations from the band-structure predictions. In very high fields we also detect signatures of large Zeeman spin-splitting (g~16).

cond-mat.str-el↗

Discovery of a Three-dimensional Topological Dirac Semimetal, Na3Bi

Three-dimensional (3D) topological Dirac semimetals (TDSs) represent a novel state of quantum matter that can be viewed as '3D graphene'. In contrast to two-dimensional (2D) Dirac fermions in graphene or on the surface of 3D topological insulators, TDSs possess 3D Dirac fermions in the bulk. The TDS is also an important boundary state mediating numerous novel quantum states, such as topological insulators, Weyl semi-metals, Axion insulators and topological superconductors. By investigating the electronic structure of Na3Bi with angle resolved photoemission spectroscopy, we discovered 3D Dirac fermions with linear dispersions along all momentum directions for the first time. Furthermore, we demonstrated that the 3D Dirac fermions in Na3Bi were protected by the bulk crystal symmetry. Our results establish that Na3Bi is the first model system of 3D TDSs, which can also serve as an ideal platform for the systematic study of quantum phase transitions between rich novel topological quantum states.

cond-mat.mtrl-sci↗

Multiplicity fluctuation analysis of target residues in nucleus-emulsion collisions at a few hundred MeV/nucleon

Multiplicity fluctuation of the target evaporated fragments emitted in 290 A MeV 12C-AgBr, 400 A MeV 12C-AgBr, 400 A MeV 20Ne-AgBr and 500 A MeV 56Fe-AgBr interactions is investigated using scaled factorial moment method in two-dimensional normal phase space and cumulative variable space, respectively. It is found that in normal phase space the scaled factorial moment (ln ) increases linearly with increase of the divided number of phase space (lnM) for lower q-value and increases linearly with the increase of lnM and then becomes saturated or decreased for higher q-value, in cumulative variable space ln decreases linearly with increase of lnM, which indicates that no evidence of non-statistical multiplicity fluctuation is observed in our data sets. So any fluctuation indicated in the results of normal variable space analysis is totally caused by non-uniformity of single-particle density distribution.

nucl-ex↗

Quantum Hall Effect from the Topological Surface States of Strained Bulk HgTe

We report transport studies on a three dimensional, 70 nm thick HgTe layer, which is strained by epitaxial growth on a CdTe substrate. The strain induces a band gap in the otherwise semi-metallic HgTe, which thus becomes a three dimensional topological insulator. Contributions from residual bulk carriers to the transport properties of the gapped HgTe layer are negligible at mK temperatures. As a result, the sample exhibits a quantized Hall effect that results from the 2D single cone Dirac-like topological surface states.

cond-mat.mes-hall↗

STM imaging of electronic waves on the surface of Bi$_2$Te$_3$: topologically protected surface states and hexagonal warping effects

Scanning tunneling spectroscopy studies on high-quality Bi$_2$Te$_3$ crystals exhibit perfect correspondence to ARPES data, hence enabling identification of different regimes measured in the local density of states (LDOS). Oscillations of LDOS near a step are analyzed. Within the main part of the surface band oscillations are strongly damped, supporting the hypothesis of topological protection. At higher energies, as the surface band becomes concave, oscillations appear which disperse with a particular wave-vector that may result from an unconventional hexagonal warping term.

cond-mat.str-el↗

Large Gap Topological Insulator Bi2Te3 with a Single Dirac Cone on the Surface

We investigate the surface state of Bi$_2$Te$_3$ using angle resolved photoemission spectroscopy (ARPES) and transport measurements. By scanning over the entire Brillouin zone (BZ), we demonstrate that the surface state consists of a single non-degenerate Dirac cone centered at the $Γ$ point. Furthermore, with appropriate hole (Sn) doping to counteract intrinsic n-type doping from vacancy and anti-site defects, the Fermi level can be tuned to intersect only the surface states, indicating a full energy gap for the bulk states, consistent with a carrier sign change near this doping in transport properties. Our experimental results establish for the first time that Bi$_2$Te$_3$ is a three dimensional topological insulator with a single Dirac cone on the surface, as predicted by a recent theory.

cond-mat.mtrl-sci↗

The hierarchy of multiple many-body interaction scales in high-temperature superconductors

To date, angle-resolved photoemission spectroscopy has been successful in identifying energy scales of the many-body interactions in correlated materials, focused on binding energies of up to a few hundred meV below the Fermi energy. Here, at higher energy scale, we present improved experimental data from four families of high-Tc superconductors over a wide doping range that reveal a hierarchy of many-body interaction scales focused on: the low energy anomaly ("kink") of 0.03-0.09eV, a high energy anomaly of 0.3-0.5eV, and an anomalous enhancement of the width of the LDA-based CuO2 band extending to energies of ~ 2 eV. Besides their universal behavior over the families, we find that all of these three dispersion anomalies also show clear doping dependence over the doping range presented.

cond-mat.supr-con↗

Anomalous k-dependent spin splitting in wurtzite AlxGa1-xN/GaN heterostructures

We have confirmed the k-dependent spin splitting in wurtzite AlxGa1-xN/GaN heterostructures. Anomalous beating pattern in Shubnikov-de Haas measurements arises from the interference of Rashba and Dresselhaus spin-orbit interactions. The dominant mechanism for the k-dependent spin splitting at high values of k is attributed to Dresselhaus term which is enhanced by the Delta C1-Delta C3 coupling of wurtzite band folding effect.

cond-mat.mtrl-sci↗

Study of two-subband population in Fe-doped AlxGa1-xN/GaN heterostructures by persistent photoconductivity effect

The electronic properties of Fe-doped Al0.31Ga0.69N/GaN heterostructures have been studied by Shubnikov-de Haas measurement. Two subbands of the two-dimensional electron gas in the hetero-interface were populated. After the low temperature illumination, the electron density increases from 11.99 x 1012 cm-2 to 13.40 x 1012 cm-2 for the first subband and from 0.66 x 1012 cm-2 to 0.94 x 1012 cm-2 for the second subband. The persistent photoconductivity effect (~13% increase) is mostly attributed to the Fe-related deep-donor level in GaN layer. The second subband starts to populate when the first subband is filled at a density n1 = 9.40 x 1012 cm-2. We calculate the energy separation between the first and second subbands to be 105 meV.

cond-mat.mtrl-sci↗