arXiv subjects

Y. Niimi

Publications and source records attributed to Y. Niimi.

18 recordsLinked to original sources

arXiv2024

Observation of two-level critical-state in a van-der-Waals superconductor Pt(Bi$_{1-x}$Se$_x$)$_2$

Trigonal PtBi$_2$ is one of the attractive van-der-Waals materials because of the enhancement of its superconducting transition temperature $T_{\rm{c}}$ by doping chalcogen elements such as Se and Te. Recently, it has been reported that $T_{\rm{c}}$ of Pt(Bi$_{1-x}$Se$_x$)$_2$ is enhanced by a factor of 4, compared to the pristine PtBi$_2$, together with the polar-nonpolar structural phase transition. Thus, it is desirable to study electrical transport properties for this new superconducting compound. Here, we have performed magnetotransport measurements for Pt(Bi$_{1-x}$Se$_x$)$_2$ ($x$ = 0.06 and 0.08) thin-film devices and have observed a peculiar magnetoresistance where a finite hysteresis appears when the superconducting state is broken. By measuring the magnetoresistance systematically, we have attributed this magnetoresistance to the two-level critical-state where fluxons pinned in Pt(Bi$_{1-x}$Se$_x$)$_2$ play an important role.

cond-mat.supr-con↗

arXiv2021

Itinerant ferromagnetism mediated by giant spin polarization of metallic ligand band in van der Waals magnet Fe5GeTe2

We investigate near-Fermi-energy (EF) element-specific electronic and spin states of ferromagnetic van der Waals (vdW) metal Fe5GeTe2. The soft x-ray angle-resolved photoemission spectroscopy (SX-ARPES) measurement provides spectroscopic evidence of localized Fe 3d band. We also find prominent hybridization between the localized Fe 3d band and the delocalized Ge/Te p bands. This picture is strongly supported from direct observation of the remarkable spin polarization of the ligand p bands near EF, using x-ray magnetic circular dichroism (XMCD) measurements. The strength of XMCD signal from ligand element Te shows the highest value, as far as we recognize, among literature reporting finite XMCD signal for none-magnetic element in any systems. Combining SX-ARPES and elemental selective XMCD measurements, we collectively point an important role of giant spin polarization of the delocalized ligand Te states for realizing itinerant long-range ferromagnetism in Fe5GeTe2. Our finding provides a fundamental elemental selective view-point for understanding mechanism of itinerant ferromagnetism in low dimensional compounds, which also leads insight for designing exotic magnetic states by interfacial band engineering in heterostructures.

cond-mat.str-el↗

arXiv2015

Strong Suppression of the Spin Hall Effect in the Spin Glass State

We have measured spin Hall effects in spin glass metals, CuMnBi alloys, with the spin absorption method in the lateral spin valve structure. Far above the spin glass temperature Tg where the magnetic moments of Mn impurities are randomly frozen, the spin Hall angle of CuMnBi ternary alloy is as large as that of CuBi binary alloy. Surprisingly, however, it starts to decrease at about 4Tg and becomes as little as 7 times smaller at 0.5Tg. A similar tendency was also observed in anomalous Hall effects in the ternary alloys. We propose an explanation in terms of a simple model considering the relative dynamics between the localized moment and the conduction electron spin.

cond-mat.mes-hall↗

arXiv2014

Inverse spin Hall effect in a closed loop circuit

We present measurements of inverse spin Hall effects (ISHEs) in which the conversion of a spin current into a charge current via the ISHE is detected not as a voltage in a standard open circuit but directly as the charge current generated in a closed loop. The method is applied to the ISHEs of Bi-doped Cu and Pt. The derived expression of ISHE for the loop structure can relate the charge current flowing into the loop to the spin Hall angle of the SHE material and the resistance of the loop.

cond-mat.mes-hall↗

arXiv2014

Extrinsic spin Hall effects measured with lateral spin valve structures

The spin Hall effect (SHE), induced by spin-orbit interaction in nonmagnetic materials, is one of the promising phenomena for conversion between charge and spin currents in spintronic devices. The spin Hall (SH) angle is the characteristic parameter of this conversion. We have performed experiments of the conversion from spin into charge currents by the SHE in lateral spin valve structures. We present experimental results on the extrinsic SHEs induced by doping nonmagnetic metals, Cu or Ag, with impurities having a large spin-orbit coupling, Bi or Pb, as well as results on the intrinsic SHE of Au. The SH angle induced by Bi in Cu or Ag is negative and particularly large for Bi in Cu, 10 times larger than the intrinsic SH angle in Au. We also observed a large SH angle for CuPb but the SHE signal disappeared in a few days. Such an aging effect could be related to a fast mobility of Pb in Cu and has not been observed in CuBi alloys.

cond-mat.mes-hall↗

arXiv2012

Giant Spin Hall Effect Induced by Skew Scattering from Bismuth Impurities inside Thin Film CuBi Alloys

We demonstrate that a giant spin Hall effect (SHE) can be induced by introducing a small amount of Bi impurities in Cu. Our analysis based on a new 3-dimensional finite element treatment of spin transport shows that the sign of the SHE induced by the Bi impurities is negative and its spin Hall (SH) angle amounts to -0.24. Such a negative large SH angle in CuBi alloys can be explained by applying the resonant scattering model proposed by Fert and Levy [Phys. Rev. Lett. 106, 157208 (2011)] to 6p impurities.

cond-mat.mes-hall↗

arXiv2012

The spin Hall effect as a probe of nonlinear spin fluctuations

The spin Hall effect and its inverse play key roles in spintronic devices since they allow conversion of charge currents to and from spin currents. The conversion efficiency strongly depends on material details, such as the electronic band structure and the nature of impurities. Here we show an anomaly in the inverse spin Hall effect in weak ferromagnetic NiPd alloys near their Curie temperatures with a shape independent of material details, such as Ni concentrations. By extending Kondo's model for the anomalous Hall effect, we explain the observed anomaly as originating from the second-order nonlinear spin fluctuation of Ni moments. This brings to light an essential symmetry difference between the spin Hall effect and the anomalous Hall effect which reflects the first order nonlinear fluctuations of local moments. Our finding opens up a new application of the spin Hall effect, by which a minuscule magnetic moment can be detected.

cond-mat.mes-hall↗

arXiv2011

Indication of intrinsic spin Hall effect in 4d and 5d transition metals

We have investigated spin Hall effects in 4$d$ and 5$d$ transition metals, Nb, Ta, Mo, Pd and Pt, by incorporating the spin absorption method in the lateral spin valve structure; where large spin current preferably relaxes into the transition metals, exhibiting strong spin-orbit interactions. Thereby nonlocal spin valve measurements enable us to evaluate their spin Hall conductivities. The sign of the spin Hall conductivity changes systematically depending on the number of $d$ electrons. This tendency is in good agreement with the recent theoretical calculation based on the intrinsic spin Hall effect.

cond-mat.mes-hall↗

arXiv2011

Extrinsic Spin Hall Effect Induced by Iridium Impurities in Copper

We study the extrinsic spin Hall effect induced by Ir impurities in Cu by injecting a pure spin current into a CuIr wire from a lateral spin valve structure. While no spin Hall effect is observed without Ir impurity, the spin Hall resistivity of CuIr increases linearly with the impurity concentration. The spin Hall angle of CuIr, $(2.1 \pm 0.6)$% throughout the concentration range between 1% and 12%, is practically independent of temperature. These results represent a clear example of predominant skew scattering extrinsic contribution to the spin Hall effect in a nonmagnetic alloy.

cond-mat.mes-hall↗

arXiv2009

Effect of Disorder on the Quantum Coherence in Mesoscopic Wires

We present phase coherence time measurements in quasi-one-dimensional mesoscopic wires made from high mobility two-dimensional electron gas. By implanting gallium ions into a GaAs/AlGaAs heterojunction we are able to vary the diffusion coefficient over 2 orders of magnitude. We show that in the diffusive limit, the decoherence time follows a power law as a function of diffusion coefficient as expected by theory. When the disorder is low enough so that the samples are semi-ballistic, we observe a new and unexpected regime in which the phase coherence time is independent of disorder. In addition, for all samples the temperature dependence of the phase coherence time follows a power law down to the lowest temperatures without any sign of saturation and strongly suggests that the frequently observed low temperature saturation is not intrinsic.

cond-mat.mes-hall↗

arXiv2009

Localized Distributions of Quasi Two-Dimensional Electronic States near Defects Artificially Created at Graphite Surfaces in Magnetic Fields

We measured the local density of states of a quasi two-dimensional electron system (2DES) near defects, artificially created by Ar-ion sputtering, on surfaces of highly oriented pyrolytic graphite (HOPG) with scanning tunneling spectroscopy (STS) in high magnetic fields. At valley energies of the Landau level spectrum, we found two typical localized distributions of the 2DES depending on the defects. These are new types of distributions which are not observed in the previous STS work at the HOPG surface near a point defect [Y. Niimi \textit{et al}., Phys. Rev. Lett. {\bf 97}, 236804 (2006).]. With increasing energy, we observed gradual transformation from the localized distributions to the extended ones as expected for the integer quantum Hall state. We show that the defect potential depth is responsible for the two localized distributions from comparison with theoretical calculations.

cond-mat.mes-hall↗

arXiv2008

Low temperature dephasing in irradiated metallic wires

We present phase coherence time measurements in quasi-one-dimensional Ag wires implanted with Ag$^{+}$ ions with an energy of $100 keV$. The measurements have been carried out in the temperature range from $100 mK$ up to $10 K$; this has to be compared with the Kondo temperature of iron in silver, i.e. $T_{K}^{Ag/Fe} \approx 4 K$, used in recent experiments on dephasing in Kondo systems\cite{mallet_prl_06,birge_prl_06}. We show that the phase coherence time is not affected by the implantation procedure, clearly proving that ion implantation process by itself \emph{does not lead to any extra dephasing} at low temperature.

cond-mat.mes-hall↗

arXiv2007

Temperature dependence of the impurity-induced resonant state in Zn-doped Bi_2Sr_2CaCu_2O$_{8+δ}$ by Scanning Tunneling Spectroscopy

We report on the temperature dependence of the impurity-induced resonant state in Zn-doped Bi_2Sr_2CaCu_2O$_{8+δ}$ by scanning tunneling spectroscopy at 30 mK < T < 52 K. It is known that a Zn impurity induces a sharp resonant peak in tunnel spectrum at an energy close to the Fermi level. We observed that the resonant peak survives up to 52 K. The peak broadens with increasing temperature, which is explained by the thermal effect. This result provides information to understand the origin of the resonant peak.

cond-mat.supr-con↗

arXiv2007

Construction of a Versatile Ultra-Low Temperature Scanning Tunneling Microscope

We constructed a dilution-refrigerator (DR) based ultra-low temperature scanning tunneling microscope (ULT-STM) which works at temperatures down to 30 mK, in magnetic fields up to 6 T and in ultrahigh vacuum (UHV). Besides these extreme operation conditions, this STM has several unique features not available in other DR based ULT-STMs. One can load STM tips as well as samples with clean surfaces prepared in a UHV environment to an STM head keeping low temperature and UHV conditions. After then, the system can be cooled back to near the base temperature within 3 hours. Due to these capabilities, it has a variety of applications not only for cleavable materials but also for almost all conducting materials. The present ULT-STM has also an exceptionally high stability in the presence of magnetic field and even during field sweep. We describe details of its design, performance and applications for low temperature physics.

cond-mat.supr-con↗

arXiv2006

Real-Space Imaging of Alternate Localization and Extension of Quasi Two-Dimensional Electronic States at Graphite Surfaces in Magnetic Fields

We measured the local density of states (LDOS) of a quasi two-dimensional (2D) electron system near point defects on a surface of highly oriented pyrolytic graphite (HOPG) with scanning tunneling microscopy and spectroscopy. Differential tunnel conductance images taken at very low temperatures and in high magnetic fields show a clear contrast between localized and extended spatial distributions of the LDOS at the valley and peak energies of the Landau level spectrum, respectively. The localized electronic state has a single circular distribution around the defects with a radius comparable to the magnetic length. The localized LDOS is in good agreement with a spatial distribution of a calculated wave function for a single electron in 2D in a Coulomb potential in magnetic fields.

cond-mat.mes-hall↗

arXiv2006

Scanning tunneling microscopy and spectroscopy of the electronic local density of states of graphite surfaces near monoatomic step edges

We measured the electronic local density of states (LDOS) of graphite surfaces near monoatomic step edges, which consist of either the zigzag or armchair edge, with the scanning tunneling microscopy (STM) and spectroscopy (STS) techniques. The STM data reveal that the $(\sqrt{3} \times \sqrt{3}) R 30^{\circ}$ and honeycomb superstructures coexist over a length scale of 3-4 nm from both the edges. By comparing with density-functional derived nonorthogonal tight-binding calculations, we show that the coexistence is due to a slight admixing of the two types of edges at the graphite surfaces. In the STS measurements, a clear peak in the LDOS at negative bias voltages from -100 to -20 mV was observed near the zigzag edges, while such a peak was not observed near the armchair edges. We concluded that this peak corresponds to the graphite "edge state" theoretically predicted by Fujita \textit{et al.} [J. Phys. Soc. Jpn. {\bf 65}, 1920 (1996)] with a tight-binding model for graphene ribbons. The existence of the edge state only at the zigzag type edge was also confirmed by our first-principles calculations with different edge terminations.

cond-mat.mes-hall↗

arXiv2005

STS Observations of Landau Levels at Graphite Surfaces

Scanning tunneling spectroscopy measurements were made on surfaces of two different kinds of graphite samples, Kish graphite and highly oriented pyrolytic graphite (HOPG), at very low temperatures and in high magnetic fields. We observed a series of peaks in the tunnel spectra, which grow with increasing field, both at positive and negative bias voltages. These are associated with Landau quantization of the quasi two-dimensional electrons and holes in graphite in magnetic fields perpendicular to the basal plane. Almost field independent Landau levels fixed near the Fermi energy, which are characteristic of the graphite crystalline structure, were directly observed for the first time. Calculations of the local density of states at the graphite surfaces allow us to identify Kish graphite as bulk graphite and HOPG as graphite with finite thickness effectively.

cond-mat.other↗

arXiv2005

Scanning tunneling microscopy and spectroscopy studies of graphite edges

We studied experimentally and theoretically the electronic local density of states (LDOS) near single step edges at the surface of exfoliated graphite. In scanning tunneling microscopy measurements, we observed the $(\sqrt{3} \times \sqrt{3}) R 30^{\circ}$ and honeycomb superstructures extending over 3$-$4 nm both from the zigzag and armchair edges. Calculations based on a density-functional derived non-orthogonal tight-binding model show that these superstructures can coexist if the two types of edges admix each other in real graphite step edges. Scanning tunneling spectroscopy measurements near the zigzag edge reveal a clear peak in the LDOS at an energy below the Fermi energy by 20 meV. No such a peak was observed near the armchair edge. We concluded that this peak corresponds to the "edge state" theoretically predicted for graphene ribbons, since a similar prominent LDOS peak due to the edge state is obtained by the first principles calculations.

physics.chem-ph↗